Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
16032 | 677 | 17.7 | 40% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
3050 | 2 | SOVIET PHYSICS SEMICONDUCTORS-USSR//PHYS MICROSTRUCT//MOBILITY SPECTRUM ANALYSIS | 2452 |
16032 | 1 | PHYS MICROSTRUCT//PHOTO THERMAL IONIZATION SPECTROSCOPY//HOT CARRIER INDUCED DEVICE DEGRADATION | 677 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | PHYS MICROSTRUCT | address | 220224 | 13% | 6% | 87 |
2 | PHOTO THERMAL IONIZATION SPECTROSCOPY | authKW | 135308 | 0% | 100% | 3 |
3 | HOT CARRIER INDUCED DEVICE DEGRADATION | authKW | 90205 | 0% | 100% | 2 |
4 | IMPURITY AND DEFECT LEVELS IN ELEMENTAL SEMICONDUCTORS | authKW | 90205 | 0% | 100% | 2 |
5 | PHOTO DEVICES | address | 90205 | 0% | 100% | 2 |
6 | A STATES | authKW | 81182 | 0% | 60% | 3 |
7 | GRP PHOTOELECT THEOR | address | 81182 | 0% | 60% | 3 |
8 | QUANTUM CORRECTIONS TO THE CONDUCTIVITY | authKW | 60135 | 0% | 67% | 2 |
9 | RADIOENGN ELECT | address | 54149 | 5% | 4% | 33 |
10 | PLANETARY | address | 51719 | 4% | 4% | 28 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 8500 | 58% | 0% | 394 |
2 | Physics, Applied | 834 | 25% | 0% | 166 |
3 | Physics, Multidisciplinary | 778 | 17% | 0% | 114 |
4 | Materials Science, Multidisciplinary | 28 | 8% | 0% | 56 |
5 | Engineering, Electrical & Electronic | 21 | 6% | 0% | 41 |
6 | Materials Science, Coatings & Films | 13 | 1% | 0% | 10 |
7 | Optics | 8 | 3% | 0% | 20 |
8 | Instruments & Instrumentation | 0 | 1% | 0% | 8 |
9 | Physics, Mathematical | 0 | 1% | 0% | 6 |
10 | Mechanics | -0 | 1% | 0% | 7 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | PHYS MICROSTRUCT | 220224 | 13% | 6% | 87 |
2 | PHOTO DEVICES | 90205 | 0% | 100% | 2 |
3 | GRP PHOTOELECT THEOR | 81182 | 0% | 60% | 3 |
4 | RADIOENGN ELECT | 54149 | 5% | 4% | 33 |
5 | PLANETARY | 51719 | 4% | 4% | 28 |
6 | INFRARED PHYS SHANGHAI | 45103 | 0% | 100% | 1 |
7 | PHYSISOTECH | 45103 | 0% | 100% | 1 |
8 | RECH T BASES TEMP | 45103 | 0% | 100% | 1 |
9 | SPECIALLY TECHNOL | 45103 | 0% | 100% | 1 |
10 | USINKOV RADIOPHYS ELECT | 45103 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 29085 | 9% | 1% | 60 |
2 | SEMICONDUCTORS | 18070 | 8% | 1% | 52 |
3 | SOLID STATE COMMUNICATIONS | 4532 | 8% | 0% | 51 |
4 | JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2027 | 2% | 0% | 15 |
5 | PHYSICAL REVIEW B | 1919 | 13% | 0% | 86 |
6 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1895 | 4% | 0% | 29 |
7 | JETP LETTERS | 1523 | 3% | 0% | 20 |
8 | JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1290 | 2% | 0% | 12 |
9 | IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 1085 | 1% | 0% | 9 |
10 | AUSTRALIAN JOURNAL OF PHYSICS | 822 | 1% | 0% | 5 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | PAVLOV, SG , ZHUKAVIN, RK , SHASTIN, VN , HUBERS, HW , (2013) THE PHYSICAL PRINCIPLES OF TERAHERTZ SILICON LASERS BASED ON INTRACENTER TRANSITIONS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 250. ISSUE 1. P. 9 -36 | 39 | 67% | 6 |
2 | ALESHKIN, VY , GAVRILENKO, LV , ODNOBLYUDOV, MA , YASSIEVICH, IN , (2008) IMPURITY RESONANCE STATES IN SEMICONDUCTORS.SEMICONDUCTORS. VOL. 42. ISSUE 8. P. 880 -904 | 31 | 66% | 8 |
3 | WANG, TH , YEN, ST , (2010) ELECTRIC-DIPOLE TRANSITIONS BETWEEN GROUP-III ACCEPTOR STATES IN UNIAXIALLY COMPRESSED GE.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 22. ISSUE 34. P. - | 18 | 100% | 1 |
4 | ANDRIANOV, AV , ZAKHAR'IN, AO , ALEKSEEV, PS , KAGAN, MS , (2012) POLARIZATION OF THE TERAHERTZ RADIATION OF UNIAXIALLY COMPRESSED P GERMANIUM AT THE ELECTRICAL BREAKDOWN OF A SHALLOW ACCEPTOR IMPURITY.JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS. VOL. 115. ISSUE 6. P. 1055-1061 | 19 | 86% | 1 |
5 | KOVALEVSKY, KA , ABROSIMOV, NV , ZHUKAVIN, RK , PAVLOV, SG , HUBERS, HW , TSYPLENKOV, VV , SHASTIN, VN , (2015) TERAHERTZ LASERS BASED ON INTRACENTRE TRANSITIONS OF GROUP V DONORS IN UNIAXIALLY DEFORMED SILICON.QUANTUM ELECTRONICS. VOL. 45. ISSUE 2. P. 113 -120 | 15 | 88% | 0 |
6 | ZAKHAR'IN, AO , BOBYLEV, AV , EGOROV, SV , ANDRIANOV, AV , (2015) TERAHERTZ EMISSION UPON THE BAND-TO-BAND EXCITATION OF GROUP-IV SEMICONDUCTORS AT ROOM TEMPERATURE.SEMICONDUCTORS. VOL. 49. ISSUE 3. P. 305 -308 | 12 | 92% | 0 |
7 | PIAO, G , LEWIS, RA , FISHER, P , (1996) SPECTROSCOPY AND PIEZOSPECTROSCOPY OF THE LYMAN TRANSITIONS AND FANO RESONANCES OF INDIUM IN SILICON.PHYSICAL REVIEW B. VOL. 54. ISSUE 3. P. 1741-1753 | 19 | 100% | 1 |
8 | PAVLOV, SG , DESSMANN, N , SHASTIN, VN , ZHUKAVIN, RK , REDLICH, B , VAN DER MEER, AFG , MITTENDORFF, M , WINNERL, S , ABROSIMOV, NV , RIEMANN, H , ET AL (2014) TERAHERTZ STIMULATED EMISSION FROM SILICON DOPED BY HYDROGENLIKE ACCEPTORS.PHYSICAL REVIEW X. VOL. 4. ISSUE 2. P. - | 14 | 67% | 5 |
9 | KOVALEVSKY, KA , ZHUKAVIN, RK , TSYPLENKOV, VV , SHASTIN, VN , ABROSIMOV, NV , RIEMANN, H , PAVLOV, SG , HUBERS, HW , (2013) SHALLOW-DONOR LASERS IN UNIAXIALLY STRESSED SILICON.SEMICONDUCTORS. VOL. 47. ISSUE 2. P. 235-241 | 13 | 76% | 0 |
10 | PAVLOV, SG , HUBERS, HW , HAAS, PM , HOVENIER, JN , KLAASSEN, TO , ZHUKAVIN, RK , SHASTIN, VN , CARDER, DA , REDLICH, B , (2008) EVIDENCE OF NONCASCADE INTRACENTER ELECTRON RELAXATION IN SHALLOW DONOR CENTERS IN SILICON.PHYSICAL REVIEW B. VOL. 78. ISSUE 16. P. - | 13 | 81% | 2 |
Classes with closest relation at Level 1 |