Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
13380 | 841 | 17.6 | 44% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1385 | 2 | POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS | 8137 |
13380 | 1 | ARCHITECTURE TECH//3 DIMENSIONAL INTEGRATION//ELECTRON DEVICE LETTERS | 841 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ARCHITECTURE TECH | address | 72614 | 0% | 100% | 2 |
2 | 3 DIMENSIONAL INTEGRATION | authKW | 65350 | 0% | 60% | 3 |
3 | ELECTRON DEVICE LETTERS | journal | 53155 | 2% | 7% | 21 |
4 | ZONE MELTING RECRYSTALLIZATION | authKW | 52805 | 0% | 36% | 4 |
5 | 3 DIMENSIONAL LSIS | authKW | 36307 | 0% | 100% | 1 |
6 | CCD IMAGING DEVICES | authKW | 36307 | 0% | 100% | 1 |
7 | CENT S MAT SCI | address | 36307 | 0% | 100% | 1 |
8 | DEV PLANNING TECH SERV MIYAMAE KU | address | 36307 | 0% | 100% | 1 |
9 | EVAPORATED AMORPHOUS SILICON | authKW | 36307 | 0% | 100% | 1 |
10 | FRONTIER PROGRAMS | address | 36307 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 8178 | 62% | 0% | 525 |
2 | Materials Science, Coatings & Films | 958 | 8% | 0% | 68 |
3 | Engineering, Electrical & Electronic | 563 | 17% | 0% | 145 |
4 | Physics, Condensed Matter | 473 | 14% | 0% | 120 |
5 | Materials Science, Multidisciplinary | 274 | 16% | 0% | 132 |
6 | Electrochemistry | 226 | 5% | 0% | 42 |
7 | Crystallography | 209 | 5% | 0% | 41 |
8 | Instruments & Instrumentation | 123 | 5% | 0% | 39 |
9 | COMPUTER APPLICATIONS & CYBERNETICS | 119 | 0% | 0% | 3 |
10 | Physics, Multidisciplinary | 41 | 5% | 0% | 42 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ARCHITECTURE TECH | 72614 | 0% | 100% | 2 |
2 | CENT S MAT SCI | 36307 | 0% | 100% | 1 |
3 | DEV PLANNING TECH SERV MIYAMAE KU | 36307 | 0% | 100% | 1 |
4 | FRONTIER PROGRAMS | 36307 | 0% | 100% | 1 |
5 | GOLDMAN FRONTIER SCI | 36307 | 0% | 100% | 1 |
6 | MAT SCI MAT CHARACTERIZAT BRANCH | 36307 | 0% | 100% | 1 |
7 | STANFORD ELE | 36307 | 0% | 100% | 1 |
8 | UNTERNEHMENSBEREICH BAUELEMENTE | 36307 | 0% | 100% | 1 |
9 | VLSI DEVICE TECHNOL BRANCH | 36307 | 0% | 100% | 1 |
10 | MICROSYST TECH | 18152 | 0% | 50% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ELECTRON DEVICE LETTERS | 53155 | 2% | 7% | 21 |
2 | JOURNAL OF APPLIED PHYSICS | 7522 | 18% | 0% | 149 |
3 | APPLIED PHYSICS LETTERS | 5841 | 16% | 0% | 134 |
4 | IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE | 5525 | 0% | 4% | 4 |
5 | SEMICONDUCTORS AND SEMIMETALS | 2566 | 1% | 1% | 6 |
6 | IEEE ELECTRON DEVICE LETTERS | 2286 | 3% | 0% | 24 |
7 | SOLID STATE TECHNOLOGY | 1943 | 1% | 1% | 10 |
8 | JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 1851 | 0% | 2% | 3 |
9 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1603 | 4% | 0% | 37 |
10 | JOURNAL OF CRYSTAL GROWTH | 1148 | 4% | 0% | 32 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | HORITA, S , FUKAO, K , ISHIWARA, H , (1990) STUDY OF SUBBOUNDARY GENERATION IN SILICON-ON-INSULATOR FILMS RECRYSTALLIZED BY A PSEUDOLINE ELECTRON-BEAM.JOURNAL OF APPLIED PHYSICS. VOL. 68. ISSUE 6. P. 2769 -2775 | 32 | 97% | 2 |
2 | MIAOULIS, IN , WONG, PY , YOON, SM , ROBINSON, RD , HESS, CK , (1992) THERMAL-ANALYSIS OF ZONE-MELTING RECRYSTALLIZATION OF SILICON-ON-INSULATOR STRUCTURES WITH AN INFRARED HEAT-SOURCE - AN OVERVIEW.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 139. ISSUE 9. P. 2687-2696 | 21 | 84% | 10 |
3 | GIVARGIZOV, EI , (1990) MECHANISMS OF ORIENTED CRYSTALLIZATION IN ARTIFICIAL EPITAXY (GRAPHOEPITAXY).THIN SOLID FILMS. VOL. 189. ISSUE 2. P. 389-396 | 19 | 95% | 12 |
4 | CULLIS, AG , (1985) TRANSIENT ANNEALING OF SEMICONDUCTORS BY LASER, ELECTRON-BEAM AND RADIANT HEATING TECHNIQUES.REPORTS ON PROGRESS IN PHYSICS. VOL. 48. ISSUE 8. P. 1155 -1233 | 84 | 27% | 38 |
5 | ROBINSON, RD , WONG, PY , MIAOULIS, IN , (1995) THERMAL EVALUATION OF ZONE-MELTING RECRYSTALLIZATION OF THIN-FILM STRUCTURES OVER A WIDE-RANGE OF MELTING-POINTS.JOURNAL OF MATERIALS RESEARCH. VOL. 10. ISSUE 4. P. 877-884 | 14 | 100% | 0 |
6 | GEIS, MW , SMITH, HI , CHEN, CK , (1986) CHARACTERIZATION AND ENTRAINMENT OF SUBBOUNDARIES AND DEFECT TRAILS IN ZONE-MELTING-RECRYSTALLIZED SI FILMS.JOURNAL OF APPLIED PHYSICS. VOL. 60. ISSUE 3. P. 1152 -1160 | 20 | 100% | 35 |
7 | HAZAMA, H , TAKAHASHI, M , KAMBAYASHI, S , KEMMOCHI, M , TSUCHIYA, K , IIDA, Y , YANO, K , INOUE, T , YOSHIMI, M , YOSHII, T , ET AL (1991) APPLICATION OF E-BEAM RECRYSTALLIZATION TO 3-LAYER IMAGE-PROCESSOR FABRICATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 38. ISSUE 1. P. 47-54 | 16 | 100% | 4 |
8 | HORITA, S , ISHIWARA, H , (1987) CHARACTERIZATION OF SILICON-ON-INSULATOR FILMS RECRYSTALLIZED BY AN OBLIQUELY SCANNED PSEUDOLINE ELECTRON-BEAM.JOURNAL OF APPLIED PHYSICS. VOL. 61. ISSUE 3. P. 1006-1014 | 22 | 88% | 6 |
9 | SMITH, HI , GEIS, MW , THOMPSON, CV , ATWATER, HA , (1983) SILICON-ON-INSULATOR BY GRAPHOEPITAXY AND ZONE-MELTING RECRYSTALLIZATION OF PATTERNED FILMS.JOURNAL OF CRYSTAL GROWTH. VOL. 63. ISSUE 3. P. 527-546 | 26 | 87% | 55 |
10 | ROBINSON, RD , MIAOULIS, IN , (1994) THERMAL PARAMETERS AFFECTING LOW-TEMPERATURE ZONE-MELTING RECRYSTALLIZATION OF FILMS.JOURNAL OF APPLIED PHYSICS. VOL. 75. ISSUE 3. P. 1771 -1782 | 15 | 83% | 4 |
Classes with closest relation at Level 1 |