Class information for:
Level 1: EPITAXIAL AL2O3//AL2O3 ON SI//DENVER AEROSP TECH OPERAT

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
23350 349 16.0 40%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
505 3       ZHURNAL NAUCHNOI I PRIKLADNOI FOTOGRAFII//SOLID STATE IONICS//SOLID ELECTROLYTE 21947
3422 2             CAF2//EPITAXIAL AL2O3//METAL INSULATOR HETEROSTRUCTURE 1570
23350 1                   EPITAXIAL AL2O3//AL2O3 ON SI//DENVER AEROSP TECH OPERAT 349

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 EPITAXIAL AL2O3 authKW 874932 3% 100% 10
2 AL2O3 ON SI authKW 196858 1% 75% 3
3 DENVER AEROSP TECH OPERAT address 174986 1% 100% 2
4 SI ON AL2O3 authKW 174986 1% 100% 2
5 035 MU M authKW 87493 0% 100% 1
6 AL PREDEPOSITION authKW 87493 0% 100% 1
7 AL PREDEPOSITION LAYER authKW 87493 0% 100% 1
8 AL PRELAYER authKW 87493 0% 100% 1
9 AL2O3 SI authKW 87493 0% 100% 1
10 BIAXIAL STRAIN MODEL authKW 87493 0% 100% 1

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Physics, Applied 2680 56% 0% 195
2 Materials Science, Coatings & Films 788 11% 0% 39
3 Engineering, Electrical & Electronic 555 25% 0% 87
4 Physics, Condensed Matter 526 22% 0% 76
5 Crystallography 407 10% 0% 34
6 COMPUTER APPLICATIONS & CYBERNETICS 296 1% 0% 3
7 Materials Science, Multidisciplinary 264 22% 0% 76
8 Electrochemistry 89 5% 0% 17
9 Telecommunications 48 4% 0% 13
10 Nuclear Science & Technology 36 4% 0% 13

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 DENVER AEROSP TECH OPERAT 174986 1% 100% 2
2 HEAT SUR E TREATMENT 87493 0% 100% 1
3 NAT OURCE IL SUBMICRON STRUCT 87493 0% 100% 1
4 NOVEL SEMICONDUCTOR MAT 87493 0% 100% 1
5 NOVL SEMICOND MAT 87493 0% 100% 1
6 SEMICOND LSI 87493 0% 100% 1
7 TENPAKU CHO 87493 0% 100% 1
8 INTELLIGENT HUMAN SENSING SYST 43746 0% 50% 1
9 NANOTECHNOL LYONINLUMR5270 43746 0% 50% 1
10 S HIRST 43746 0% 50% 1

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 RCA REVIEW 45550 3% 5% 10
2 JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS 4468 1% 2% 3
3 SOLID STATE TECHNOLOGY 3011 2% 0% 8
4 REVUE DE PHYSIQUE APPLIQUEE 2383 2% 0% 6
5 JOURNAL OF CRYSTAL GROWTH 2339 8% 0% 29
6 IEEE TRANSACTIONS ON ELECTRON DEVICES 1843 5% 0% 18
7 SEMICONDUCTORS 1284 3% 0% 10
8 IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE 831 0% 1% 1
9 APPLIED PHYSICS LETTERS 828 9% 0% 33
10 JOURNAL OF THE ELECTROCHEMICAL SOCIETY 724 5% 0% 16

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 EPITAXIAL AL2O3 874932 3% 100% 10 Search EPITAXIAL+AL2O3 Search EPITAXIAL+AL2O3
2 AL2O3 ON SI 196858 1% 75% 3 Search AL2O3+ON+SI Search AL2O3+ON+SI
3 SI ON AL2O3 174986 1% 100% 2 Search SI+ON+AL2O3 Search SI+ON+AL2O3
4 035 MU M 87493 0% 100% 1 Search 035+MU+M Search 035+MU+M
5 AL PREDEPOSITION 87493 0% 100% 1 Search AL+PREDEPOSITION Search AL+PREDEPOSITION
6 AL PREDEPOSITION LAYER 87493 0% 100% 1 Search AL+PREDEPOSITION+LAYER Search AL+PREDEPOSITION+LAYER
7 AL PRELAYER 87493 0% 100% 1 Search AL+PRELAYER Search AL+PRELAYER
8 AL2O3 SI 87493 0% 100% 1 Search AL2O3+SI Search AL2O3+SI
9 BIAXIAL STRAIN MODEL 87493 0% 100% 1 Search BIAXIAL+STRAIN+MODEL Search BIAXIAL+STRAIN+MODEL
10 COAXIAL IMPACT COLLISION ION SCATTERING SPECTROMETER 87493 0% 100% 1 Search COAXIAL+IMPACT+COLLISION+ION+SCATTERING+SPECTROMETER Search COAXIAL+IMPACT+COLLISION+ION+SCATTERING+SPECTROMETER

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 CRISTOLOVEANU, S , (1987) SILICON FILMS ON SAPPHIRE.REPORTS ON PROGRESS IN PHYSICS. VOL. 50. ISSUE 3. P. 327-371 38 59% 27
2 BLAGOV, AE , VASILIEV, AL , GOLUBEVA, AS , IVANOV, IA , KONDRATEV, OA , PISAREVSKY, YV , PRESNYAKOV, MY , PROSEKOV, PA , SEREGIN, AY , (2014) STUDY OF THE STRUCTURAL QUALITY OF HETEROEPITAXIAL SILICON-ON-SAPPHIRE STRUCTURES BY HIGH-RESOLUTION X-RAY DIFFRACTION, X-RAY REFLECTIVITY, AND ELECTRON MICROSCOPY.CRYSTALLOGRAPHY REPORTS. VOL. 59. ISSUE 3. P. 315-322 9 82% 0
3 LIAO, YX , SHRESTHA, S , HUANG, SJ , CONIBEER, G , (2015) HETERO-EPITAXIAL GAMMA-AL2O3 ON SI (100) SUBSTRATE BY SPUTTERING.MATERIALS LETTERS. VOL. 141. ISSUE . P. 20 -22 8 80% 1
4 WANG, QY , WANG, J , WANG, JH , LIU, ZL , LIN, LY , (2005) CHARACTERIZATION OF STRESS INDUCED IN SOS AND SI/GAMMA-AL2O3/SI HETEROEPITAXIAL THIN FILMS BY RAMAN SPECTROSCOPY.JOURNAL OF CRYSTAL GROWTH. VOL. 280. ISSUE 1-2. P. 222-226 10 77% 3
5 ALEKSANDROV, PA , DEMAKOV, KD , SHEMARDOV, SG , KUZNETSOV, YY , (2009) SPECIFIC FEATURES OF SOLID-PHASE RECRYSTALLIZATION OF SILICON-ON-SAPPHIRE STRUCTURES AMORPHIZED BY OXYGEN IONS.SEMICONDUCTORS. VOL. 43. ISSUE 5. P. 599-601 6 100% 0
6 OKADA, T , ITO, M , SAWADA, K , ISHIDA, M , (2006) GROWTH OF EPITAXIAL GAMMA-AL2O3(111) FILMS WITH SMOOTH SURFACES ON CHEMICALLY OXIDIZED SI(111) SUBSTRATES USING AN AL-N2O MIXED SOURCE MOLECULAR BEAM EPITAXY.JOURNAL OF CRYSTAL GROWTH. VOL. 290. ISSUE 1. P. 91 -95 10 63% 10
7 SHEMUKHIN, AA , NAZAROV, AV , BALAKSHIN, YV , CHERNYSH, VS , (2015) DEFECT FORMATION AND RECRYSTALLIZATION IN THE SILICON ON SAPPHIRE FILMS UNDER SI+ IRRADIATION.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 354. ISSUE . P. 274 -276 5 100% 1
8 ISHIDA, M , HORI, H , KONDO, F , AKAI, D , SAWADA, K , (2000) FABRICATION OF THE SI/AL2O3/SIO2/SI STRUCTURE USING O-2 ANNEALED AL2O3/SI STRUCTURE.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 39. ISSUE 4B. P. 2078 -2082 8 89% 5
9 ALEXANDROV, PA , DEMAKOV, KD , SHEMARDOV, SG , KUZNETSOV, YY , (2010) CRYSTALLINE QUALITY IMPROVEMENT IN SILICON FILMS ON SAPPHIRE USING RECRYSTALLIZATION FROM THE SILICON-SAPPHIRE INTERFACE.SEMICONDUCTORS. VOL. 44. ISSUE 10. P. 1386-1388 5 100% 0
10 KIMURA, T , ISHIDA, M , (1999) DEVELOPMENT OF SURFACE MORPHOLOGY OF EPITAXIAL AL2O3 ON SILICON BY CONTROLLING REACTION BETWEEN OXYGEN AND SILICON SURFACE.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 38. ISSUE 2A. P. 853-856 9 75% 6

Classes with closest relation at Level 1



Rank Class id link
1 13380 ARCHITECTURE TECH//3 DIMENSIONAL INTEGRATION//ELECTRON DEVICE LETTERS
2 31356 AGING AND DRYING PROCESS//CATALYTIC ISOPROPANOL DEHYDRATION//CLOSED CELL POROSITY
3 13018 CAF2//METAL INSULATOR HETEROSTRUCTURE//SOLID STATE OPT
4 33506 FEATHER CRYSTALS//GERMANIUM CRYSTAL GROWTH PROGRAM//INFRARED RADIAT STAND SECT
5 12826 SIMOX//CONTACTLESS I V METHOD//BURIED OXIDE LAYER
6 24234 MESFET//4H SIC MESFET//SIC MESFET
7 13129 KAPPA AL2O3//AL CR2O 3//ALUMINUM OXIDE
8 37264 SI O SUPERLATTICE//OXYGEN ATOMIC LAYER//CARRIER CONDUCTION MECHANISM
9 37271 GRAZING X RAY REFLECTOMETRY//ANOMALOUS DISPERSION EFFECT//BI POLAR DESIGN
10 37478 DEFECT ELECTRON STATES//DELOCALIZED TRAP//FOURIER TRANSFORM UV VIS REGION

Go to start page