Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
23350 | 349 | 16.0 | 40% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
505 | 3 | ZHURNAL NAUCHNOI I PRIKLADNOI FOTOGRAFII//SOLID STATE IONICS//SOLID ELECTROLYTE | 21947 |
3422 | 2 | CAF2//EPITAXIAL AL2O3//METAL INSULATOR HETEROSTRUCTURE | 1570 |
23350 | 1 | EPITAXIAL AL2O3//AL2O3 ON SI//DENVER AEROSP TECH OPERAT | 349 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | EPITAXIAL AL2O3 | authKW | 874932 | 3% | 100% | 10 |
2 | AL2O3 ON SI | authKW | 196858 | 1% | 75% | 3 |
3 | DENVER AEROSP TECH OPERAT | address | 174986 | 1% | 100% | 2 |
4 | SI ON AL2O3 | authKW | 174986 | 1% | 100% | 2 |
5 | 035 MU M | authKW | 87493 | 0% | 100% | 1 |
6 | AL PREDEPOSITION | authKW | 87493 | 0% | 100% | 1 |
7 | AL PREDEPOSITION LAYER | authKW | 87493 | 0% | 100% | 1 |
8 | AL PRELAYER | authKW | 87493 | 0% | 100% | 1 |
9 | AL2O3 SI | authKW | 87493 | 0% | 100% | 1 |
10 | BIAXIAL STRAIN MODEL | authKW | 87493 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 2680 | 56% | 0% | 195 |
2 | Materials Science, Coatings & Films | 788 | 11% | 0% | 39 |
3 | Engineering, Electrical & Electronic | 555 | 25% | 0% | 87 |
4 | Physics, Condensed Matter | 526 | 22% | 0% | 76 |
5 | Crystallography | 407 | 10% | 0% | 34 |
6 | COMPUTER APPLICATIONS & CYBERNETICS | 296 | 1% | 0% | 3 |
7 | Materials Science, Multidisciplinary | 264 | 22% | 0% | 76 |
8 | Electrochemistry | 89 | 5% | 0% | 17 |
9 | Telecommunications | 48 | 4% | 0% | 13 |
10 | Nuclear Science & Technology | 36 | 4% | 0% | 13 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | DENVER AEROSP TECH OPERAT | 174986 | 1% | 100% | 2 |
2 | HEAT SUR E TREATMENT | 87493 | 0% | 100% | 1 |
3 | NAT OURCE IL SUBMICRON STRUCT | 87493 | 0% | 100% | 1 |
4 | NOVEL SEMICONDUCTOR MAT | 87493 | 0% | 100% | 1 |
5 | NOVL SEMICOND MAT | 87493 | 0% | 100% | 1 |
6 | SEMICOND LSI | 87493 | 0% | 100% | 1 |
7 | TENPAKU CHO | 87493 | 0% | 100% | 1 |
8 | INTELLIGENT HUMAN SENSING SYST | 43746 | 0% | 50% | 1 |
9 | NANOTECHNOL LYONINLUMR5270 | 43746 | 0% | 50% | 1 |
10 | S HIRST | 43746 | 0% | 50% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | RCA REVIEW | 45550 | 3% | 5% | 10 |
2 | JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 4468 | 1% | 2% | 3 |
3 | SOLID STATE TECHNOLOGY | 3011 | 2% | 0% | 8 |
4 | REVUE DE PHYSIQUE APPLIQUEE | 2383 | 2% | 0% | 6 |
5 | JOURNAL OF CRYSTAL GROWTH | 2339 | 8% | 0% | 29 |
6 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1843 | 5% | 0% | 18 |
7 | SEMICONDUCTORS | 1284 | 3% | 0% | 10 |
8 | IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE | 831 | 0% | 1% | 1 |
9 | APPLIED PHYSICS LETTERS | 828 | 9% | 0% | 33 |
10 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 724 | 5% | 0% | 16 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | EPITAXIAL AL2O3 | 874932 | 3% | 100% | 10 | Search EPITAXIAL+AL2O3 | Search EPITAXIAL+AL2O3 |
2 | AL2O3 ON SI | 196858 | 1% | 75% | 3 | Search AL2O3+ON+SI | Search AL2O3+ON+SI |
3 | SI ON AL2O3 | 174986 | 1% | 100% | 2 | Search SI+ON+AL2O3 | Search SI+ON+AL2O3 |
4 | 035 MU M | 87493 | 0% | 100% | 1 | Search 035+MU+M | Search 035+MU+M |
5 | AL PREDEPOSITION | 87493 | 0% | 100% | 1 | Search AL+PREDEPOSITION | Search AL+PREDEPOSITION |
6 | AL PREDEPOSITION LAYER | 87493 | 0% | 100% | 1 | Search AL+PREDEPOSITION+LAYER | Search AL+PREDEPOSITION+LAYER |
7 | AL PRELAYER | 87493 | 0% | 100% | 1 | Search AL+PRELAYER | Search AL+PRELAYER |
8 | AL2O3 SI | 87493 | 0% | 100% | 1 | Search AL2O3+SI | Search AL2O3+SI |
9 | BIAXIAL STRAIN MODEL | 87493 | 0% | 100% | 1 | Search BIAXIAL+STRAIN+MODEL | Search BIAXIAL+STRAIN+MODEL |
10 | COAXIAL IMPACT COLLISION ION SCATTERING SPECTROMETER | 87493 | 0% | 100% | 1 | Search COAXIAL+IMPACT+COLLISION+ION+SCATTERING+SPECTROMETER | Search COAXIAL+IMPACT+COLLISION+ION+SCATTERING+SPECTROMETER |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CRISTOLOVEANU, S , (1987) SILICON FILMS ON SAPPHIRE.REPORTS ON PROGRESS IN PHYSICS. VOL. 50. ISSUE 3. P. 327-371 | 38 | 59% | 27 |
2 | BLAGOV, AE , VASILIEV, AL , GOLUBEVA, AS , IVANOV, IA , KONDRATEV, OA , PISAREVSKY, YV , PRESNYAKOV, MY , PROSEKOV, PA , SEREGIN, AY , (2014) STUDY OF THE STRUCTURAL QUALITY OF HETEROEPITAXIAL SILICON-ON-SAPPHIRE STRUCTURES BY HIGH-RESOLUTION X-RAY DIFFRACTION, X-RAY REFLECTIVITY, AND ELECTRON MICROSCOPY.CRYSTALLOGRAPHY REPORTS. VOL. 59. ISSUE 3. P. 315-322 | 9 | 82% | 0 |
3 | LIAO, YX , SHRESTHA, S , HUANG, SJ , CONIBEER, G , (2015) HETERO-EPITAXIAL GAMMA-AL2O3 ON SI (100) SUBSTRATE BY SPUTTERING.MATERIALS LETTERS. VOL. 141. ISSUE . P. 20 -22 | 8 | 80% | 1 |
4 | WANG, QY , WANG, J , WANG, JH , LIU, ZL , LIN, LY , (2005) CHARACTERIZATION OF STRESS INDUCED IN SOS AND SI/GAMMA-AL2O3/SI HETEROEPITAXIAL THIN FILMS BY RAMAN SPECTROSCOPY.JOURNAL OF CRYSTAL GROWTH. VOL. 280. ISSUE 1-2. P. 222-226 | 10 | 77% | 3 |
5 | ALEKSANDROV, PA , DEMAKOV, KD , SHEMARDOV, SG , KUZNETSOV, YY , (2009) SPECIFIC FEATURES OF SOLID-PHASE RECRYSTALLIZATION OF SILICON-ON-SAPPHIRE STRUCTURES AMORPHIZED BY OXYGEN IONS.SEMICONDUCTORS. VOL. 43. ISSUE 5. P. 599-601 | 6 | 100% | 0 |
6 | OKADA, T , ITO, M , SAWADA, K , ISHIDA, M , (2006) GROWTH OF EPITAXIAL GAMMA-AL2O3(111) FILMS WITH SMOOTH SURFACES ON CHEMICALLY OXIDIZED SI(111) SUBSTRATES USING AN AL-N2O MIXED SOURCE MOLECULAR BEAM EPITAXY.JOURNAL OF CRYSTAL GROWTH. VOL. 290. ISSUE 1. P. 91 -95 | 10 | 63% | 10 |
7 | SHEMUKHIN, AA , NAZAROV, AV , BALAKSHIN, YV , CHERNYSH, VS , (2015) DEFECT FORMATION AND RECRYSTALLIZATION IN THE SILICON ON SAPPHIRE FILMS UNDER SI+ IRRADIATION.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 354. ISSUE . P. 274 -276 | 5 | 100% | 1 |
8 | ISHIDA, M , HORI, H , KONDO, F , AKAI, D , SAWADA, K , (2000) FABRICATION OF THE SI/AL2O3/SIO2/SI STRUCTURE USING O-2 ANNEALED AL2O3/SI STRUCTURE.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 39. ISSUE 4B. P. 2078 -2082 | 8 | 89% | 5 |
9 | ALEXANDROV, PA , DEMAKOV, KD , SHEMARDOV, SG , KUZNETSOV, YY , (2010) CRYSTALLINE QUALITY IMPROVEMENT IN SILICON FILMS ON SAPPHIRE USING RECRYSTALLIZATION FROM THE SILICON-SAPPHIRE INTERFACE.SEMICONDUCTORS. VOL. 44. ISSUE 10. P. 1386-1388 | 5 | 100% | 0 |
10 | KIMURA, T , ISHIDA, M , (1999) DEVELOPMENT OF SURFACE MORPHOLOGY OF EPITAXIAL AL2O3 ON SILICON BY CONTROLLING REACTION BETWEEN OXYGEN AND SILICON SURFACE.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 38. ISSUE 2A. P. 853-856 | 9 | 75% | 6 |
Classes with closest relation at Level 1 |