Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
16870 | 630 | 19.6 | 41% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1385 | 2 | POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS | 8137 |
16870 | 1 | LASER INDUCED SURFACE PROCESS//LAMP2009//WIDE BANDGAP OXIDES | 630 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | LASER INDUCED SURFACE PROCESS | authKW | 145403 | 0% | 100% | 3 |
2 | LAMP2009 | authKW | 96935 | 0% | 100% | 2 |
3 | WIDE BANDGAP OXIDES | authKW | 96935 | 0% | 100% | 2 |
4 | CONTROL OF DEFECTS ON SURFACES | authKW | 48468 | 0% | 100% | 1 |
5 | DEFECT EXCITATION | authKW | 48468 | 0% | 100% | 1 |
6 | DEFECTS ON SURFACES | authKW | 48468 | 0% | 100% | 1 |
7 | DOUBLE LASER ANNEAL | authKW | 48468 | 0% | 100% | 1 |
8 | GRADED BAND GAP SI | authKW | 48468 | 0% | 100% | 1 |
9 | INAS GAAS001 QUANTUM DOTS | authKW | 48468 | 0% | 100% | 1 |
10 | INDIUM ANTIMONITE | authKW | 48468 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 2066 | 31% | 0% | 195 |
2 | Physics, Applied | 1792 | 35% | 0% | 223 |
3 | Physics, Multidisciplinary | 1140 | 21% | 0% | 130 |
4 | Optics | 165 | 8% | 0% | 51 |
5 | Nuclear Science & Technology | 118 | 5% | 0% | 30 |
6 | Materials Science, Coatings & Films | 69 | 3% | 0% | 18 |
7 | Instruments & Instrumentation | 56 | 4% | 0% | 24 |
8 | Materials Science, Multidisciplinary | 40 | 9% | 0% | 58 |
9 | Spectroscopy | 16 | 2% | 0% | 13 |
10 | Chemistry, Physical | 14 | 7% | 0% | 42 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | KERNFOR ANLAGE JULICH PLASM HYS | 48468 | 0% | 100% | 1 |
2 | ULTRAHIGH VOLTAGE MICROSCOPY | 48468 | 0% | 100% | 1 |
3 | VAN DE GRAAFF GRP ION SOLID INTERACT | 48468 | 0% | 100% | 1 |
4 | PHYS CHIM MATERIAUX STRASBOURG | 24233 | 0% | 50% | 1 |
5 | UMR 6631CNRS | 24233 | 0% | 50% | 1 |
6 | COOPERAT EXCITAT PROJECT ERATO | 17621 | 0% | 18% | 2 |
7 | FRE 2165CNRS | 16155 | 0% | 33% | 1 |
8 | IND PHOTON | 12921 | 0% | 13% | 2 |
9 | GRP INTERDISCIPLINAIRE ABLAT LASER PLICAT | 12115 | 0% | 25% | 1 |
10 | INTELLIGENT MAT ENGN | 8155 | 1% | 4% | 4 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 18354 | 7% | 1% | 46 |
2 | PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 2147 | 2% | 0% | 15 |
3 | JOURNAL DE PHYSIQUE | 2013 | 3% | 0% | 20 |
4 | UKRAINSKII FIZICHESKII ZHURNAL | 1765 | 2% | 0% | 11 |
5 | SEMICONDUCTORS AND SEMIMETALS | 1522 | 1% | 1% | 4 |
6 | APPLIED PHYSICS LETTERS | 1314 | 9% | 0% | 56 |
7 | SEMICONDUCTORS AND INSULATORS | 1308 | 0% | 3% | 1 |
8 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 990 | 3% | 0% | 17 |
9 | JOURNAL OF APPLIED PHYSICS | 989 | 8% | 0% | 48 |
10 | PHYSICA B & C | 981 | 1% | 0% | 9 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | LASER INDUCED SURFACE PROCESS | 145403 | 0% | 100% | 3 | Search LASER+INDUCED+SURFACE+PROCESS | Search LASER+INDUCED+SURFACE+PROCESS |
2 | LAMP2009 | 96935 | 0% | 100% | 2 | Search LAMP2009 | Search LAMP2009 |
3 | WIDE BANDGAP OXIDES | 96935 | 0% | 100% | 2 | Search WIDE+BANDGAP+OXIDES | Search WIDE+BANDGAP+OXIDES |
4 | CONTROL OF DEFECTS ON SURFACES | 48468 | 0% | 100% | 1 | Search CONTROL+OF+DEFECTS+ON+SURFACES | Search CONTROL+OF+DEFECTS+ON+SURFACES |
5 | DEFECT EXCITATION | 48468 | 0% | 100% | 1 | Search DEFECT+EXCITATION | Search DEFECT+EXCITATION |
6 | DEFECTS ON SURFACES | 48468 | 0% | 100% | 1 | Search DEFECTS+ON+SURFACES | Search DEFECTS+ON+SURFACES |
7 | DOUBLE LASER ANNEAL | 48468 | 0% | 100% | 1 | Search DOUBLE+LASER+ANNEAL | Search DOUBLE+LASER+ANNEAL |
8 | GRADED BAND GAP SI | 48468 | 0% | 100% | 1 | Search GRADED+BAND+GAP+SI | Search GRADED+BAND+GAP+SI |
9 | INAS GAAS001 QUANTUM DOTS | 48468 | 0% | 100% | 1 | Search INAS+GAAS001+QUANTUM+DOTS | Search INAS+GAAS001+QUANTUM+DOTS |
10 | INDIUM ANTIMONITE | 48468 | 0% | 100% | 1 | Search INDIUM+ANTIMONITE | Search INDIUM+ANTIMONITE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | TANIMURA, K , KANASAKI, J , (2008) EXCITATION-INDUCED ATOMIC DESORPTION AND STRUCTURAL INSTABILITY OF III-V COMPOUND SEMICONDUCTOR SURFACES.SURFACE SCIENCE. VOL. 602. ISSUE 20. P. 3162-3171 | 20 | 57% | 0 |
2 | YASUI, K , KANASAKI, J , (2011) SCANNING TUNNELING MICROSCOPIC STUDIES OF LASER-INDUCED MODIFICATIONS OF SI(001)-(2X1) SURFACE.JOURNAL OF APPLIED PHYSICS. VOL. 110. ISSUE 10. P. - | 17 | 57% | 0 |
3 | INAMI, E , TANIMURA, K , (2007) ELECTRONIC BOND RUPTURE OF SI ATOMS ON SI(111)-(2X1) INDUCED BY VALENCE EXCITATION.PHYSICAL REVIEW B. VOL. 76. ISSUE 3. P. - | 18 | 56% | 8 |
4 | KANASAKI, J , (2006) FORMATION AND CLUSTERING OF SURFACE VACANCIES UNDER ELECTRONIC EXCITATION ON SEMICONDUCTOR SURFACES.PHYSICA B-CONDENSED MATTER. VOL. 376. ISSUE . P. 834-840 | 14 | 74% | 3 |
5 | KANASAKI, J , INAMI, E , TANIMURA, K , (2007) FERMI-LEVEL DEPENDENT MORPHOLOGY IN PHOTOINDUCED BOND BREAKING ON (110) SURFACES OF III-V SEMICONDUCTORS.SURFACE SCIENCE. VOL. 601. ISSUE 11. P. 2367-2372 | 14 | 67% | 3 |
6 | ER, AO , ELSAYED-ALI, HE , (2010) EXCITATION-INDUCED GERMANIUM QUANTUM DOT FORMATION ON SI(100)-(2X1).JOURNAL OF APPLIED PHYSICS. VOL. 108. ISSUE 3. P. - | 21 | 38% | 2 |
7 | ITOH, N , OKANO, A , HATTORI, K , KANASAKI, J , NAKAI, Y , (1993) VACANCY-INITIATED LASER SPUTTERING FROM SEMICONDUCTOR SURFACES.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. VOL. 82. ISSUE 2. P. 310-316 | 19 | 73% | 2 |
8 | TANIMURA, K , KANASAKI, J , (2006) EXCITATION-INDUCED STRUCTURAL INSTABILITY OF SEMICONDUCTOR SURFACES.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 18. ISSUE 30. P. S1479-S1516 | 24 | 34% | 7 |
9 | TANIMURA, K , INAMI, E , KANASAKI, J , HESS, WP , (2006) TWO-HOLE LOCALIZATION MECHANISM FOR ELECTRONIC BOND RUPTURE OF SURFACE ATOMS BY LASER-INDUCED VALENCE EXCITATION OF SEMICONDUCTORS.PHYSICAL REVIEW B. VOL. 74. ISSUE 3. P. - | 16 | 52% | 5 |
10 | KANASAKI, J , NAKAMURA, M , ISHIKAWA, K , TANIMURA, K , (2002) PRIMARY PROCESSES OF LASER-INDUCED SELECTIVE DIMER-LAYER REMOVAL ON SI(001)-(2 X 1).PHYSICAL REVIEW LETTERS. VOL. 89. ISSUE 25. P. - | 10 | 83% | 22 |
Classes with closest relation at Level 1 |