Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
6094 | 1531 | 18.4 | 62% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1385 | 2 | POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS | 8137 |
6094 | 1 | EXCIMER LASER CRYSTALLIZATION//LASER CRYSTALLIZATION//EXCIMER LASER ANNEALING | 1531 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | EXCIMER LASER CRYSTALLIZATION | authKW | 785913 | 3% | 77% | 51 |
2 | LASER CRYSTALLIZATION | authKW | 727480 | 4% | 60% | 61 |
3 | EXCIMER LASER ANNEALING | authKW | 535435 | 4% | 47% | 57 |
4 | POLYCRYSTALLINE SILICON | authKW | 296213 | 6% | 16% | 93 |
5 | SEMICOND ELECT INTEGRAT SCI | address | 270942 | 2% | 54% | 25 |
6 | FLASH LAMP ANNEALING | authKW | 234419 | 2% | 51% | 23 |
7 | POLY SI | authKW | 217340 | 4% | 19% | 57 |
8 | LOCATION CONTROL | authKW | 142444 | 1% | 71% | 10 |
9 | THIN FILM TRANSISTORS | authKW | 140631 | 8% | 6% | 119 |
10 | LOW TEMPERATURE POLYCRYSTALLINE SILICON | authKW | 107685 | 1% | 60% | 9 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 17228 | 67% | 0% | 1024 |
2 | Materials Science, Coatings & Films | 4640 | 13% | 0% | 197 |
3 | Physics, Condensed Matter | 3312 | 26% | 0% | 392 |
4 | Materials Science, Multidisciplinary | 2851 | 32% | 0% | 487 |
5 | Materials Science, Ceramics | 347 | 3% | 0% | 51 |
6 | Engineering, Electrical & Electronic | 265 | 10% | 0% | 157 |
7 | Optics | 163 | 6% | 0% | 88 |
8 | Physics, Multidisciplinary | 111 | 6% | 0% | 87 |
9 | Nanoscience & Nanotechnology | 28 | 2% | 0% | 38 |
10 | Crystallography | 28 | 2% | 0% | 28 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SEMICOND ELECT INTEGRAT SCI | 270942 | 2% | 54% | 25 |
2 | NOVEL LASER TECH PLICAT SYST | 83094 | 0% | 83% | 5 |
3 | DPTO MECAN MAQUINAS MOTO TERM FLUIDOS | 79772 | 0% | 100% | 4 |
4 | ALTEDEC | 59829 | 0% | 100% | 3 |
5 | PHYS FUNCT MAT SCI | 59829 | 0% | 100% | 3 |
6 | TECHNOL PLATFORM | 47711 | 1% | 16% | 15 |
7 | MAT WISSEN MIKROCHARAKTERISIERUNG | 44870 | 0% | 75% | 3 |
8 | ELECT COMPONENTS TECHNOL MAT | 42306 | 1% | 14% | 15 |
9 | TECHNOL DEV TEAM 1 | 39886 | 0% | 100% | 2 |
10 | ELE ON TUBE DEVICES | 38346 | 0% | 38% | 5 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JAPANESE JOURNAL OF APPLIED PHYSICS | 10106 | 6% | 1% | 90 |
2 | SOLID STATE PHENOMENA | 7058 | 2% | 1% | 28 |
3 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 6340 | 7% | 0% | 100 |
4 | THIN SOLID FILMS | 5603 | 7% | 0% | 102 |
5 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 4487 | 4% | 0% | 68 |
6 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 3759 | 3% | 0% | 48 |
7 | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2993 | 3% | 0% | 46 |
8 | APPLIED PHYSICS LETTERS | 2630 | 8% | 0% | 124 |
9 | JOURNAL OF NON-CRYSTALLINE SOLIDS | 2023 | 3% | 0% | 49 |
10 | JOURNAL OF APPLIED PHYSICS | 2005 | 7% | 0% | 107 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | EXCIMER LASER CRYSTALLIZATION | 785913 | 3% | 77% | 51 | Search EXCIMER+LASER+CRYSTALLIZATION | Search EXCIMER+LASER+CRYSTALLIZATION |
2 | LASER CRYSTALLIZATION | 727480 | 4% | 60% | 61 | Search LASER+CRYSTALLIZATION | Search LASER+CRYSTALLIZATION |
3 | EXCIMER LASER ANNEALING | 535435 | 4% | 47% | 57 | Search EXCIMER+LASER+ANNEALING | Search EXCIMER+LASER+ANNEALING |
4 | POLYCRYSTALLINE SILICON | 296213 | 6% | 16% | 93 | Search POLYCRYSTALLINE+SILICON | Search POLYCRYSTALLINE+SILICON |
5 | FLASH LAMP ANNEALING | 234419 | 2% | 51% | 23 | Search FLASH+LAMP+ANNEALING | Search FLASH+LAMP+ANNEALING |
6 | POLY SI | 217340 | 4% | 19% | 57 | Search POLY+SI | Search POLY+SI |
7 | LOCATION CONTROL | 142444 | 1% | 71% | 10 | Search LOCATION+CONTROL | Search LOCATION+CONTROL |
8 | THIN FILM TRANSISTORS | 140631 | 8% | 6% | 119 | Search THIN+FILM+TRANSISTORS | Search THIN+FILM+TRANSISTORS |
9 | LOW TEMPERATURE POLYCRYSTALLINE SILICON | 107685 | 1% | 60% | 9 | Search LOW+TEMPERATURE+POLYCRYSTALLINE+SILICON | Search LOW+TEMPERATURE+POLYCRYSTALLINE+SILICON |
10 | MELT DURATION | 102562 | 0% | 86% | 6 | Search MELT+DURATION | Search MELT+DURATION |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ADIKAARI, AADT , SILVA, SRP , (2008) EXCIMER LASER CRYSTALLIZATION AND NANOSTRUCTURING OF AMORPHOUS SILICON FOR PHOTOVOLTAIC APPLICATIONS.NANO. VOL. 3. ISSUE 3. P. 117-126 | 40 | 80% | 4 |
2 | VOOGT, FC , ISHIHARA, R , TICHELAAR, FD , (2004) MELTING AND CRYSTALLIZATION BEHAVIOR OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION AMORPHOUS SI FILMS DURING EXCIMER-LASER ANNEALING.JOURNAL OF APPLIED PHYSICS. VOL. 95. ISSUE 5. P. 2873-2879 | 31 | 97% | 31 |
3 | KUO, CC , YEH, WC , CHEN, JB , JENG, JY , (2006) MONITORING EXPLOSIVE CRYSTALLIZATION PHENOMENON OF AMORPHOUS SILICON THIN FILMS DURING SHORT PULSE DURATION XEF EXCIMER LASER ANNEALING USING REAL-TIME OPTICAL DIAGNOSTIC MEASUREMENTS.THIN SOLID FILMS. VOL. 515. ISSUE 4. P. 1651-1657 | 28 | 100% | 19 |
4 | OHDAIRA, K , FUJIWARA, T , ENDO, Y , NISHIZAKI, S , MATSUMURA, H , (2009) EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON FILMS BY FLASH LAMP ANNEALING.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 4. P. - | 28 | 88% | 20 |
5 | MATSUKI, K , KIMURA, M , ISHIHARA, R , (2012) 3-D SIMULATOR OF LASER CRYSTALLIZATION FOR POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS.IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING. VOL. 25. ISSUE 4. P. 650-656 | 26 | 90% | 1 |
6 | KUO, CC , (2011) A NOVEL OPTICAL DIAGNOSTIC TECHNIQUE FOR ANALYZING THE RECRYSTALLIZATION CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN FILMS FOLLOWING FRONTSIDE AND BACKSIDE EXCIMER LASER IRRADIATION.OPTICS AND LASERS IN ENGINEERING. VOL. 49. ISSUE 11. P. 1281 -1288 | 24 | 92% | 4 |
7 | VEGA, F , SOLIS, J , SIEGEL, J , AFONSO, CN , (2000) DELAYED MELTING AT THE SUBSTRATE INTERFACE OF AMORPHOUS GE FILMS PARTIALLY MELTED WITH NANOSECOND LASER PULSES.JOURNAL OF APPLIED PHYSICS. VOL. 88. ISSUE 11. P. 6321 -6326 | 32 | 94% | 5 |
8 | KUO, CC , (2015) A RELIABLE APPROACH TO A RAPID CALCULATION OF THE GRAIN SIZE OF POLYCRYSTALLINE THIN FILMS AFTER EXCIMER LASER CRYSTALLIZATION.MATERIALI IN TEHNOLOGIJE. VOL. 49. ISSUE 5. P. 687 -691 | 25 | 81% | 0 |
9 | KUMOMI, H , (2003) LOCATION CONTROL OF CRYSTAL GRAINS IN EXCIMER LASER CRYSTALLIZATION OF SILICON THIN FILMS.APPLIED PHYSICS LETTERS. VOL. 83. ISSUE 3. P. 434-436 | 27 | 96% | 19 |
10 | KUO, CC , (2011) DYNAMICAL RESOLIDIFICATION BEHAVIOR OF SILICON THIN FILMS DURING FRONTSIDE AND BACKSIDE EXCIMER LASER ANNEALING.OPTICS AND LASERS IN ENGINEERING. VOL. 49. ISSUE 7. P. 804-810 | 22 | 96% | 6 |
Classes with closest relation at Level 1 |