Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
11102 | 1007 | 17.7 | 77% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
10 | 4 | OPTICS//PHYSICS, PARTICLES & FIELDS//PHYSICS, MULTIDISCIPLINARY | 1131262 |
681 | 3 | TERAHERTZ//TERAHERTZ TIME DOMAIN SPECTROSCOPY//TERAHERTZ SPECTROSCOPY | 8704 |
1282 | 2 | TERAHERTZ//TERAHERTZ TIME DOMAIN SPECTROSCOPY//TERAHERTZ SPECTROSCOPY | 8704 |
11102 | 1 | LT GAAS//LOW TEMPERATURE GROWN GAAS//LOW TEMPERATURE GAAS | 1007 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | LT GAAS | authKW | 1014826 | 5% | 71% | 47 |
2 | LOW TEMPERATURE GROWN GAAS | authKW | 524771 | 3% | 58% | 30 |
3 | LOW TEMPERATURE GAAS | authKW | 438141 | 2% | 85% | 17 |
4 | ARSENIC PRECIPITATES | authKW | 212251 | 1% | 100% | 7 |
5 | AS PRECIPITATES | authKW | 161710 | 1% | 67% | 8 |
6 | LOW TEMPERATURE MOLECULAR BEAM EPITAXY | authKW | 126338 | 0% | 83% | 5 |
7 | ASYMMETRIC FABRY PEROT DEVICES | authKW | 121286 | 0% | 100% | 4 |
8 | MRSEC TECHNOL ENABLING HETEROSTRUCT MAT | address | 121282 | 1% | 67% | 6 |
9 | ANTISITE ARSENIC | authKW | 90965 | 0% | 100% | 3 |
10 | AS CLUSTERS | authKW | 90965 | 0% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 10138 | 63% | 0% | 639 |
2 | Physics, Condensed Matter | 1528 | 22% | 0% | 220 |
3 | Engineering, Electrical & Electronic | 1486 | 24% | 0% | 243 |
4 | Materials Science, Multidisciplinary | 356 | 16% | 0% | 163 |
5 | Optics | 292 | 8% | 0% | 85 |
6 | Crystallography | 249 | 5% | 0% | 49 |
7 | Nanoscience & Nanotechnology | 196 | 6% | 0% | 57 |
8 | Physics, Multidisciplinary | 89 | 6% | 0% | 61 |
9 | Materials Science, Coatings & Films | 33 | 2% | 0% | 18 |
10 | Microscopy | 29 | 1% | 0% | 7 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MRSEC TECHNOL ENABLING HETEROSTRUCT MAT | 121282 | 1% | 67% | 6 |
2 | IT COMPONENTS MAT TECHNOL | 34108 | 0% | 38% | 3 |
3 | CNRSUMR5027 | 30322 | 0% | 100% | 1 |
4 | CNRSUMR7645INSERMU451 | 30322 | 0% | 100% | 1 |
5 | CNRSURA 1406 YVETTE | 30322 | 0% | 100% | 1 |
6 | ECOLE NORMALE SUPER SCI PL TECHNOL S OPTRO | 30322 | 0% | 100% | 1 |
7 | FOR UNGSZENTRUM THIN FILM TECHNOL | 30322 | 0% | 100% | 1 |
8 | FOTONENSSAT OPTRON | 30322 | 0% | 100% | 1 |
9 | FOTONUMR 6082ENSSAT | 30322 | 0% | 100% | 1 |
10 | FRAUNHOFER NON DESTRUCT | 30322 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | APPLIED PHYSICS LETTERS | 18249 | 26% | 0% | 257 |
2 | JOURNAL OF ELECTRONIC MATERIALS | 7437 | 5% | 1% | 49 |
3 | SEMICONDUCTORS | 6112 | 4% | 1% | 37 |
4 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 3666 | 3% | 0% | 30 |
5 | JOURNAL OF APPLIED PHYSICS | 3035 | 10% | 0% | 105 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2576 | 4% | 0% | 38 |
7 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 2226 | 3% | 0% | 27 |
8 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1978 | 2% | 0% | 23 |
9 | JOURNAL OF CRYSTAL GROWTH | 1659 | 4% | 0% | 42 |
10 | ELECTRONICS LETTERS | 792 | 3% | 0% | 33 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | LT GAAS | 1014826 | 5% | 71% | 47 | Search LT+GAAS | Search LT+GAAS |
2 | LOW TEMPERATURE GROWN GAAS | 524771 | 3% | 58% | 30 | Search LOW+TEMPERATURE+GROWN+GAAS | Search LOW+TEMPERATURE+GROWN+GAAS |
3 | LOW TEMPERATURE GAAS | 438141 | 2% | 85% | 17 | Search LOW+TEMPERATURE+GAAS | Search LOW+TEMPERATURE+GAAS |
4 | ARSENIC PRECIPITATES | 212251 | 1% | 100% | 7 | Search ARSENIC+PRECIPITATES | Search ARSENIC+PRECIPITATES |
5 | AS PRECIPITATES | 161710 | 1% | 67% | 8 | Search AS+PRECIPITATES | Search AS+PRECIPITATES |
6 | LOW TEMPERATURE MOLECULAR BEAM EPITAXY | 126338 | 0% | 83% | 5 | Search LOW+TEMPERATURE+MOLECULAR+BEAM+EPITAXY | Search LOW+TEMPERATURE+MOLECULAR+BEAM+EPITAXY |
7 | ASYMMETRIC FABRY PEROT DEVICES | 121286 | 0% | 100% | 4 | Search ASYMMETRIC+FABRY+PEROT+DEVICES | Search ASYMMETRIC+FABRY+PEROT+DEVICES |
8 | ANTISITE ARSENIC | 90965 | 0% | 100% | 3 | Search ANTISITE+ARSENIC | Search ANTISITE+ARSENIC |
9 | AS CLUSTERS | 90965 | 0% | 100% | 3 | Search AS+CLUSTERS | Search AS+CLUSTERS |
10 | PHOTOQUENCHING | 72765 | 1% | 40% | 6 | Search PHOTOQUENCHING | Search PHOTOQUENCHING |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | MELLOCH, MR , WOODALL, JM , HARMON, ES , OTSUKA, N , POLLAK, FH , NOLTE, DD , FEENSTRA, RM , LUTZ, MA , (1995) LOW-TEMPERATURE-GROWN III-V MATERIALS.ANNUAL REVIEW OF MATERIALS SCIENCE. VOL. 25. ISSUE . P. 547-600 | 72 | 78% | 79 |
2 | KROTKUS, A , COUTAZ, JL , (2005) NON-STOICHIOMETRIC SEMICONDUCTOR MATERIALS FOR TERAHERTZ OPTOELECTRONICS APPLICATIONS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 20. ISSUE 7. P. S142-S150 | 54 | 70% | 28 |
3 | LAVRENT'EVA, LG , VILISOVA, MD , PREOBRAZHENSKII, VV , CHALDYSHEV, VV , (2002) LOW-TEMPERATURE MOLECULAR BEAM EPITAXY OF GAAS: INFLUENCE OF CRYSTALLIZATION CONDITIONS ON STRUCTURE AND PROPERTIES OF LAYERS.CRYSTALLOGRAPHY REPORTS. VOL. 47. ISSUE . P. S118-S127 | 45 | 87% | 2 |
4 | WELLS, NP , BELDEN, PM , DEMERS, JR , LOTSHAW, WT , (2014) TRANSIENT REFLECTIVITY AS A PROBE OF ULTRAFAST CARRIER DYNAMICS IN SEMICONDUCTORS: A REVISED MODEL FOR LOW-TEMPERATURE GROWN GAAS.JOURNAL OF APPLIED PHYSICS. VOL. 116. ISSUE 7. P. - | 32 | 82% | 4 |
5 | LOOK, DC , (1993) MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES.THIN SOLID FILMS. VOL. 231. ISSUE 1-2. P. 61-73 | 49 | 83% | 160 |
6 | MELLOCH, MR , NOLTE, DD , WOODALL, JM , CHANG, JCP , JANES, DB , HARMON, ES , (1996) MOLECULAR BEAM EPITAXY OF NONSTOICHIOMETRIC SEMICONDUCTORS AND MULTIPHASE MATERIAL SYSTEMS.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 21. ISSUE 3. P. 189-263 | 69 | 61% | 39 |
7 | CHALDYSHEV, VV , (2002) TWO-DIMENSIONAL ORGANIZATION OF AS CLUSTERS IN GAAS.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 88. ISSUE 2-3. P. 195-204 | 28 | 93% | 11 |
8 | LUO, JK , THOMAS, H , MORGAN, DV , WESTWOOD, D , (1996) TRANSPORT PROPERTIES OF GAAS LAYERS GROWN BY MOLECULAR BEAM EPITAXY AT LOW TEMPERATURE AND THE EFFECTS OF ANNEALING.JOURNAL OF APPLIED PHYSICS. VOL. 79. ISSUE 7. P. 3622-3629 | 29 | 100% | 28 |
9 | ORTIZ, V , NAGLE, J , LAMPIN, JF , PERONNE, E , ALEXANDROU, A , (2007) LOW-TEMPERATURE-GROWN GAAS: MODELING OF TRANSIENT REFLECTIVITY EXPERIMENTS.JOURNAL OF APPLIED PHYSICS. VOL. 102. ISSUE 4. P. - | 25 | 83% | 6 |
10 | MELLOCH, MR , WOODALL, JM , OTSUKA, N , MAHALINGAM, K , CHANG, CL , NOLTE, DD , (1993) GAAS, ALGAAS, AND INGAAS EPILAYERS CONTAINING AS CLUSTERS - SEMIMETAL/SEMICONDUCTOR COMPOSITES.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 22. ISSUE 1. P. 31-36 | 32 | 100% | 15 |
Classes with closest relation at Level 1 |