Class information for:
Level 1: GAAS MESFET//GATE LAG//DRAIN CURRENT TRANSIENT

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
17203 611 14.0 46%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
579 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC 14235
17203 1                   GAAS MESFET//GATE LAG//DRAIN CURRENT TRANSIENT 611

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 GAAS MESFET authKW 241857 4% 20% 24
2 GATE LAG authKW 232562 2% 42% 11
3 DRAIN CURRENT TRANSIENT authKW 199895 1% 67% 6
4 FUNCT ELEMENTS CONTROL SYST address 177679 1% 44% 8
5 P SI P AND N SI N DIODES authKW 149924 0% 100% 3
6 TRANSCONDUCTANCE DISPERSION authKW 149924 0% 100% 3
7 BACKGATING EFFECT authKW 112442 0% 75% 3
8 CHANNEL SUBSTRATE INTERFACE authKW 99950 0% 100% 2
9 CHANNEL SUBSTRATE JUNCTION authKW 99950 0% 100% 2
10 EXTRINSIC ILLUMINATION authKW 99950 0% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Engineering, Electrical & Electronic 8097 66% 0% 405
2 Physics, Applied 3711 50% 0% 306
3 Physics, Condensed Matter 873 21% 0% 130
4 Nuclear Science & Technology 215 6% 0% 38
5 Telecommunications 53 3% 0% 19
6 Physics, Multidisciplinary 42 6% 0% 34
7 Nanoscience & Nanotechnology 41 4% 0% 23
8 Materials Science, Multidisciplinary 16 7% 0% 45
9 Instruments & Instrumentation 15 2% 0% 15
10 Computer Science, Hardware & Architecture 14 1% 0% 7

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 FUNCT ELEMENTS CONTROL SYST 177679 1% 44% 8
2 AEROSP SYST INFR AIRPORTS 49975 0% 100% 1
3 CMPD SEMICOND TECHNOL 49975 0% 100% 1
4 EIC LUSAC 49975 0% 100% 1
5 ENGN PLICAT SPECIF INTEGRATED CIRC 49975 0% 100% 1
6 FUNCT ORIENTED ELE 49975 0% 100% 1
7 GRP ETUDE SYST TELECOMMUN ENSIL 49975 0% 100% 1
8 MSN 1G5 49975 0% 100% 1
9 NANOFABRICAT NOVEL DEVICES INTEGRATED 49975 0% 100% 1
10 PROD COMPLEX ELE ON TECHNOL 49975 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 31622 16% 1% 98
2 SOLID-STATE ELECTRONICS 19477 10% 1% 62
3 ELECTRON DEVICE LETTERS 10610 1% 3% 8
4 IEEE ELECTRON DEVICE LETTERS 6762 6% 0% 35
5 IEEE TRANSACTIONS ON NUCLEAR SCIENCE 4075 6% 0% 37
6 ACTA ELECTRONICA 3631 0% 4% 2
7 SOVIET MICROELECTRONICS 2666 1% 1% 4
8 ELECTRONICS LETTERS 1995 7% 0% 40
9 INSTITUTE OF PHYSICS CONFERENCE SERIES 1634 3% 0% 18
10 ONDE ELECTRIQUE 1499 0% 2% 2

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 GAAS MESFET 241857 4% 20% 24 Search GAAS+MESFET Search GAAS+MESFET
2 GATE LAG 232562 2% 42% 11 Search GATE+LAG Search GATE+LAG
3 DRAIN CURRENT TRANSIENT 199895 1% 67% 6 Search DRAIN+CURRENT+TRANSIENT Search DRAIN+CURRENT+TRANSIENT
4 P SI P AND N SI N DIODES 149924 0% 100% 3 Search P+SI+P+AND+N+SI+N+DIODES Search P+SI+P+AND+N+SI+N+DIODES
5 TRANSCONDUCTANCE DISPERSION 149924 0% 100% 3 Search TRANSCONDUCTANCE+DISPERSION Search TRANSCONDUCTANCE+DISPERSION
6 BACKGATING EFFECT 112442 0% 75% 3 Search BACKGATING+EFFECT Search BACKGATING+EFFECT
7 CHANNEL SUBSTRATE INTERFACE 99950 0% 100% 2 Search CHANNEL+SUBSTRATE+INTERFACE Search CHANNEL+SUBSTRATE+INTERFACE
8 CHANNEL SUBSTRATE JUNCTION 99950 0% 100% 2 Search CHANNEL+SUBSTRATE+JUNCTION Search CHANNEL+SUBSTRATE+JUNCTION
9 EXTRINSIC ILLUMINATION 99950 0% 100% 2 Search EXTRINSIC+ILLUMINATION Search EXTRINSIC+ILLUMINATION
10 GAAS EPITAXIAL STRUCTURE 99950 0% 100% 2 Search GAAS+EPITAXIAL+STRUCTURE Search GAAS+EPITAXIAL+STRUCTURE

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 SENGOUGA, N , MEFTAH, A , MEFTAH, A , HENINI, M , (2014) NUMERICAL SIMULATION OF THE RESPONSE OF SUBSTRATE TRAPS TO A VOLTAGE APPLIED TO THE GATE OF A GALLIUM ARSENIDE FIELD EFFECT TRANSISTOR.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 24. ISSUE . P. 34 -39 12 75% 0
2 DING, Y , YAN, XL , (2011) LOW-FREQUENCY NOISES IN GAAS MESFET'S CURRENTS ASSOCIATED WITH SUBSTRATE CONDUCTIVITY AND CHANNEL-SUBSTRATE JUNCTION.CHINESE SCIENCE BULLETIN. VOL. 56. ISSUE 12. P. 1267 -1271 12 75% 0
3 HIEMSTRA, DM , KIZEEVI, AA , HOU, LZ , SALAMA, CAT , (1998) DOSE RATE AND TOTAL DOSE DEPENDENCE OF LOW FREQUENCY NOISE PERFORMANCE, I-V CURVES AND SIDEGATING FOR GAAS MESFETS.IEEE TRANSACTIONS ON NUCLEAR SCIENCE. VOL. 45. ISSUE 6. P. 2616 -2623 15 71% 3
4 MANIFACIER, JC , ARDEBILI, R , (1995) BULK AND CONTACT EFFECTS IN P(+)-SI-N(+) SEMIINSULATING GAAS STRUCTURES.JOURNAL OF APPLIED PHYSICS. VOL. 77. ISSUE 7. P. 3174 -3185 13 87% 12
5 DING, Y , YAN, XL , (2010) EFFECTS OF CHANNEL-SUBSTRATE INTERFACE ON HYSTERESIS OF SIDEGATING EFFECT IN GAAS MESFETS.CHINESE SCIENCE BULLETIN. VOL. 55. ISSUE 34. P. 3950 -3953 8 89% 0
6 KAZAMI, Y , KASAI, D , HORIO, K , (2004) NUMERICAL ANALYSIS OF SLOW CURRENT TRANSIENTS AND POWER COMPRESSION IN GAASFETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 51. ISSUE 11. P. 1760-1764 11 73% 21
7 HORIO, K , YAMADA, T , (1999) TWO-DIMENSIONAL ANALYSIS OF SURFACE-STATE EFFECTS ON TURN-ON CHARACTERISTICS IN GAAS MESFET'S.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 46. ISSUE 4. P. 648-655 10 91% 28
8 SENGOUGA, N , JONES, BK , (1995) BACKGATING EFFECTS IN GAAS-FETS WITH A CHANNEL-SEMI-INSULATING SUBSTRATE BOUNDARY.SOLID-STATE ELECTRONICS. VOL. 38. ISSUE 7. P. 1413 -1421 14 78% 5
9 KHUCHUA, NP , KHVEDELIDZE, LV , GOREV, NB , PRIVALOV, EN , SHUR, MS , (2002) DETERMINATION OF DEEP TRAP CONCENTRATION AT CHANNEL-SUBSTRATE INTERFACE IN GAAS MESFET USING SIDEGATING MEASUREMENTS.SOLID-STATE ELECTRONICS. VOL. 46. ISSUE 9. P. 1463 -1466 8 100% 3
10 GOREV, NB , KODZHESPIROVA, I , PRIVALOV, EN , KHVEDELIDZE, L , KHUCHUA, N , PERADZE, GG , SHUR, MS , STEVENS, K , (2003) NON-DESTRUCTIVE DEEP TRAP DIAGNOSTICS OF EPITAXIAL STRUCTURES.SOLID-STATE ELECTRONICS. VOL. 47. ISSUE 9. P. 1569-1575 10 77% 2

Classes with closest relation at Level 1


Rank Class id link
1 6739 MHEMT//HEMT//PHEMT
2 21606 ATSUGI ELECT COMMUN S FUNCT DEVICE DEV//SINGLE VOLTAGE SUPPLY//CAPACITANCE NONLINEARITY
3 5693 LARGE SIGNAL MODEL//NONLINEAR MEASUREMENTS//IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
4 24234 MESFET//4H SIC MESFET//SIC MESFET
5 18696 HETEROJUNCTION PHOTOTRANSISTOR//PHOTOTRANSISTOR//OPFET
6 32868 DIELECTRIC COMPUTATION//HEINRICH PLETT STR 40//ITUTE OF NANOSTRUCTURE TECHNOL AND ANALYT INA
7 3053 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//PSEUDOMORPHIC MODFET
8 1145 EL2//GAAS//SEMI INSULATING GAAS
9 14670 CURRENT DENSITY FILAMENT//GUNN EFFECT//HIGH FIELD DOMAIN
10 11102 LT GAAS//LOW TEMPERATURE GROWN GAAS//LOW TEMPERATURE GAAS

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