Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
7730 | 1335 | 19.2 | 77% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1327 | 2 | SILICON NANOCRYSTALS//SI NANOCRYSTALS//ERBIUM | 8411 |
7730 | 1 | NANOCRYSTAL MEMORY//NANO FLOATING GATE MEMORY//QUANTUM FUNCT SPIN | 1335 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | NANOCRYSTAL MEMORY | authKW | 585492 | 2% | 80% | 32 |
2 | NANO FLOATING GATE MEMORY | authKW | 510514 | 2% | 89% | 25 |
3 | QUANTUM FUNCT SPIN | address | 224102 | 2% | 35% | 28 |
4 | NONVOLATILE MEMORY | authKW | 212855 | 6% | 11% | 82 |
5 | MOS MEMORY | authKW | 205842 | 1% | 100% | 9 |
6 | FLOATING GATE MEMORY | authKW | 197912 | 1% | 58% | 15 |
7 | NMAT GRP | address | 157707 | 1% | 34% | 20 |
8 | NANOCRYSTAL NC | authKW | 153737 | 1% | 61% | 11 |
9 | GE NANOCRYSTALS | authKW | 129581 | 1% | 33% | 17 |
10 | NONVOLATILE MEMORIES | authKW | 129119 | 2% | 24% | 24 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 17810 | 73% | 0% | 968 |
2 | Nanoscience & Nanotechnology | 4901 | 21% | 0% | 280 |
3 | Engineering, Electrical & Electronic | 2318 | 26% | 0% | 346 |
4 | Physics, Condensed Matter | 2307 | 23% | 0% | 309 |
5 | Materials Science, Multidisciplinary | 2018 | 29% | 0% | 388 |
6 | Materials Science, Coatings & Films | 1493 | 8% | 0% | 107 |
7 | Optics | 101 | 5% | 0% | 68 |
8 | Physics, Multidisciplinary | 63 | 5% | 0% | 66 |
9 | Electrochemistry | 21 | 2% | 0% | 23 |
10 | Chemistry, Multidisciplinary | 2 | 4% | 0% | 58 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | QUANTUM FUNCT SPIN | 224102 | 2% | 35% | 28 |
2 | NMAT GRP | 157707 | 1% | 34% | 20 |
3 | THIN FILM NANO MICROELECT | 72910 | 1% | 25% | 13 |
4 | QUANTUM STRUCT | 62931 | 1% | 17% | 16 |
5 | PATTERNING FABRICAT GRP | 52274 | 0% | 57% | 4 |
6 | CATANIA TECHNOL | 47643 | 0% | 42% | 5 |
7 | QUANTUM FUNCT | 46686 | 1% | 29% | 7 |
8 | LETIDTSGRE | 45743 | 0% | 100% | 2 |
9 | METROL NANO SCI | 45743 | 0% | 100% | 2 |
10 | SCI ANAL MAT UNIT SAM | 45743 | 0% | 100% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | APPLIED PHYSICS LETTERS | 10781 | 17% | 0% | 229 |
2 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 10737 | 2% | 2% | 29 |
3 | MICROELECTRONIC ENGINEERING | 8042 | 4% | 1% | 60 |
4 | SOLID-STATE ELECTRONICS | 6450 | 4% | 1% | 53 |
5 | ELECTROCHEMICAL AND SOLID STATE LETTERS | 3859 | 2% | 1% | 27 |
6 | IEEE ELECTRON DEVICE LETTERS | 3610 | 3% | 0% | 38 |
7 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 3543 | 4% | 0% | 49 |
8 | NANOTECHNOLOGY | 2798 | 3% | 0% | 38 |
9 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2775 | 3% | 0% | 44 |
10 | JOURNAL OF APPLIED PHYSICS | 2376 | 8% | 0% | 108 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | NANOCRYSTAL MEMORY | 585492 | 2% | 80% | 32 | Search NANOCRYSTAL+MEMORY | Search NANOCRYSTAL+MEMORY |
2 | NANO FLOATING GATE MEMORY | 510514 | 2% | 89% | 25 | Search NANO+FLOATING+GATE+MEMORY | Search NANO+FLOATING+GATE+MEMORY |
3 | NONVOLATILE MEMORY | 212855 | 6% | 11% | 82 | Search NONVOLATILE+MEMORY | Search NONVOLATILE+MEMORY |
4 | MOS MEMORY | 205842 | 1% | 100% | 9 | Search MOS+MEMORY | Search MOS+MEMORY |
5 | FLOATING GATE MEMORY | 197912 | 1% | 58% | 15 | Search FLOATING+GATE+MEMORY | Search FLOATING+GATE+MEMORY |
6 | NANOCRYSTAL NC | 153737 | 1% | 61% | 11 | Search NANOCRYSTAL+NC | Search NANOCRYSTAL+NC |
7 | GE NANOCRYSTALS | 129581 | 1% | 33% | 17 | Search GE+NANOCRYSTALS | Search GE+NANOCRYSTALS |
8 | NONVOLATILE MEMORIES | 129119 | 2% | 24% | 24 | Search NONVOLATILE+MEMORIES | Search NONVOLATILE+MEMORIES |
9 | NON VOLATILE MEMORY | 107966 | 3% | 12% | 39 | Search NON+VOLATILE+MEMORY | Search NON+VOLATILE+MEMORY |
10 | FLASH MEMORY | 91595 | 4% | 7% | 58 | Search FLASH+MEMORY | Search FLASH+MEMORY |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CHANG, TC , JIAN, FY , CHEN, SC , TSAI, YT , (2011) DEVELOPMENTS IN NANOCRYSTAL MEMORY.MATERIALS TODAY. VOL. 14. ISSUE 12. P. 608-615 | 49 | 92% | 76 |
2 | LEE, PF , LU, XB , DAI, JY , CHAN, HLW , JELENKOVIC, E , TONG, KY , (2006) MEMORY EFFECT AND RETENTION PROPERTY OF GE NANOCRYSTAL EMBEDDED HF-ALUMINATE HIGH-K GATE DIELECTRIC.NANOTECHNOLOGY. VOL. 17. ISSUE 5. P. 1202-1206 | 30 | 94% | 48 |
3 | LIN, CT , WANG, JC , HUANG, PW , CHEN, YY , CHANG, LC , (2013) PERFORMANCE REVELATION AND OPTIMIZATION OF GOLD NANOCRYSTAL FOR FUTURE NONVOLATILE MEMORY APPLICATION.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 52. ISSUE 4. P. - | 24 | 89% | 1 |
4 | XU, ZG , ZHU, CX , HUO, ZL , CUI, YX , WANG, YM , LI, FH , LIU, M , (2012) IMPROVED PERFORMANCE OF NON-VOLATILE MEMORY WITH AU-AL2O3 CORE-SHELL NANOCRYSTALS EMBEDDED IN HFO2 MATRIX.APPLIED PHYSICS LETTERS. VOL. 100. ISSUE 20. P. - | 22 | 92% | 10 |
5 | RAY, SK , MAIKAP, S , BANERJEE, W , DAS, S , (2013) NANOCRYSTALS FOR SILICON-BASED LIGHT-EMITTING AND MEMORY DEVICES.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 46. ISSUE 15. P. - | 60 | 26% | 46 |
6 | REN, JJ , YAN, D , CHU, S , LIU, JL , (2013) NON-VOLATILE MEMORY EFFECT OF A HIGH-DENSITY NISI NANO-DOTS FLOATING GATE MEMORY USING SINGLE TRIANGULAR-SHAPED SI NANOWIRE CHANNEL.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 111. ISSUE 3. P. 719 -724 | 24 | 80% | 0 |
7 | BONAFOS, C , CARRADA, M , BENASSAYAG, G , SCHAMM-CHARDON, S , GROENEN, J , PAILLARD, V , PECASSOU, B , CLAVERIE, A , DIMITRAKIS, P , KAPETANAKIS, E , ET AL (2012) SI AND GE NANOCRYSTALS FOR FUTURE MEMORY DEVICES.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 15. ISSUE 6. P. 615-626 | 26 | 68% | 19 |
8 | ARMEANU, D , LEROY, Y , CORDAN, AS , (2012) MODELING OF THE ELECTROSTATIC COUPLING BETWEEN NANOCRYSTALS OF A DISORDERED NANOCRYSTAL FLOATING GATE MEMORY.NANOTECHNOLOGY. VOL. 23. ISSUE 21. P. - | 21 | 91% | 0 |
9 | NI, H , WU, L , SONG, Z , HUI, C , (2010) MEMORY CHARACTERISTICS OF NI-NIOX CORE-SHELL NANOCRYSTALS EMBEDDED IN SIO2 GATE OXIDE FOR NONVOLATILE FLASH DEVICES.JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. VOL. 12. ISSUE 6. P. 1306-1310 | 20 | 100% | 1 |
10 | ZHOU, HM , LI, B , YANG, Z , ZHAN, N , YAN, D , LAKE, RK , LIU, JL , (2011) TISI2 NANOCRYSTAL METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR MEMORY.IEEE TRANSACTIONS ON NANOTECHNOLOGY. VOL. 10. ISSUE 3. P. 499-505 | 21 | 88% | 6 |
Classes with closest relation at Level 1 |