Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 31429 | 153 | 13.3 | 35% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
| 579 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC | 14235 |
| 31429 | 1 | METHODOLOGY OF MEASUREMENT//MATH PHYS SEMICOND//MICROWAVE SOLID STATE GRP | 153 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | METHODOLOGY OF MEASUREMENT | authKW | 399157 | 1% | 100% | 2 |
| 2 | MATH PHYS SEMICOND | address | 199579 | 1% | 100% | 1 |
| 3 | MICROWAVE SOLID STATE GRP | address | 199579 | 1% | 100% | 1 |
| 4 | PD WO3 SIC | authKW | 199579 | 1% | 100% | 1 |
| 5 | PSEUDO SCHOTTKY DIODE | authKW | 199579 | 1% | 100% | 1 |
| 6 | SCHOTTKY RECTIFYING CURRENT | authKW | 199579 | 1% | 100% | 1 |
| 7 | SEMICOND SECT | address | 199579 | 1% | 100% | 1 |
| 8 | WIDE GAP NANOCRYSTALS | authKW | 199579 | 1% | 100% | 1 |
| 9 | CN PPP | authKW | 99788 | 1% | 50% | 1 |
| 10 | ISOTYPE HETEROJUNCTIONS | authKW | 99788 | 1% | 50% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 1576 | 53% | 0% | 81 |
| 2 | Engineering, Electrical & Electronic | 925 | 46% | 0% | 70 |
| 3 | Physics, Applied | 812 | 47% | 0% | 72 |
| 4 | Materials Science, Coatings & Films | 50 | 5% | 0% | 7 |
| 5 | Telecommunications | 47 | 5% | 0% | 8 |
| 6 | Electrochemistry | 34 | 5% | 0% | 7 |
| 7 | Materials Science, Multidisciplinary | 18 | 11% | 0% | 17 |
| 8 | Instruments & Instrumentation | 5 | 3% | 0% | 4 |
| 9 | Computer Science, Hardware & Architecture | 1 | 1% | 0% | 1 |
| 10 | Nanoscience & Nanotechnology | 0 | 1% | 0% | 2 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | MATH PHYS SEMICOND | 199579 | 1% | 100% | 1 |
| 2 | MICROWAVE SOLID STATE GRP | 199579 | 1% | 100% | 1 |
| 3 | SEMICOND SECT | 199579 | 1% | 100% | 1 |
| 4 | STATE SCI EXPT TECH INFORMAT PROTECT PRO | 99788 | 1% | 50% | 1 |
| 5 | UMR 6602LASMEA | 99788 | 1% | 50% | 1 |
| 6 | UBP CNRS | 66525 | 1% | 33% | 1 |
| 7 | AMIRKHANOV PHYS | 28179 | 3% | 3% | 5 |
| 8 | DAGESTAN SCI | 17675 | 5% | 1% | 8 |
| 9 | LOE | 7981 | 1% | 4% | 1 |
| 10 | PHYSICOTECH | 3984 | 3% | 1% | 4 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOLID-STATE ELECTRONICS | 14791 | 18% | 0% | 27 |
| 2 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 12920 | 12% | 0% | 19 |
| 3 | SEMICONDUCTORS | 8561 | 11% | 0% | 17 |
| 4 | IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 4765 | 3% | 1% | 4 |
| 5 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2210 | 8% | 0% | 13 |
| 6 | IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA | 912 | 1% | 0% | 2 |
| 7 | SURFACE ENGINEERING AND APPLIED ELECTROCHEMISTRY | 630 | 1% | 0% | 1 |
| 8 | JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS | 565 | 2% | 0% | 3 |
| 9 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 476 | 5% | 0% | 7 |
| 10 | RADIOTEKHNIKA I ELEKTRONIKA | 408 | 2% | 0% | 3 |
Author Key Words |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | METHODOLOGY OF MEASUREMENT | 399157 | 1% | 100% | 2 | Search METHODOLOGY+OF+MEASUREMENT | Search METHODOLOGY+OF+MEASUREMENT |
| 2 | PD WO3 SIC | 199579 | 1% | 100% | 1 | Search PD+WO3+SIC | Search PD+WO3+SIC |
| 3 | PSEUDO SCHOTTKY DIODE | 199579 | 1% | 100% | 1 | Search PSEUDO+SCHOTTKY+DIODE | Search PSEUDO+SCHOTTKY+DIODE |
| 4 | SCHOTTKY RECTIFYING CURRENT | 199579 | 1% | 100% | 1 | Search SCHOTTKY+RECTIFYING+CURRENT | Search SCHOTTKY+RECTIFYING+CURRENT |
| 5 | WIDE GAP NANOCRYSTALS | 199579 | 1% | 100% | 1 | Search WIDE+GAP+NANOCRYSTALS | Search WIDE+GAP+NANOCRYSTALS |
| 6 | CN PPP | 99788 | 1% | 50% | 1 | Search CN+PPP | Search CN+PPP |
| 7 | ISOTYPE HETEROJUNCTIONS | 99788 | 1% | 50% | 1 | Search ISOTYPE+HETEROJUNCTIONS | Search ISOTYPE+HETEROJUNCTIONS |
| 8 | PT GATE | 39914 | 1% | 20% | 1 | Search PT+GATE | Search PT+GATE |
| 9 | SCHOTTKY BARRIER DEVICES | 33261 | 1% | 17% | 1 | Search SCHOTTKY+BARRIER+DEVICES | Search SCHOTTKY+BARRIER+DEVICES |
| 10 | STATIC PARAMETERS | 33261 | 1% | 17% | 1 | Search STATIC+PARAMETERS | Search STATIC+PARAMETERS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | ALIEV, KM , KAMILOV, IK , IBRAGIMOV, KO , ABAKAROVA, NS , (2012) N-TYPE NEGATIVE DIFFERENTIAL RESISTANCE, HYSTERESIS, AND OSCILLATIONS IN THE CURRENT-VOLTAGE CHARACTERISTICS OF MICROWAVE DIODES.SEMICONDUCTORS. VOL. 46. ISSUE 8. P. 1059-1065 | 10 | 100% | 0 |
| 2 | SHAMIRZAEV, SH , GULYAMOV, G , DADAMIRZAEV, MG , GULYAMOV, AG , (2009) THE NONIDEALITY COEFFICIENT OF CURRENT-VOLTAGE CHARACTERISTICS FOR P-N JUNCTIONS IN A HIGH ULTRAHIGH-FREQUENCY (MICROWAVE) FIELD.SEMICONDUCTORS. VOL. 43. ISSUE 1. P. 47-51 | 8 | 100% | 1 |
| 3 | ALIEV, KM , KAMILOV, IK , IBRAGIMOV, KO , ABAKAROVA, NS , (2015) RESPONSE OF SEMICONDUCTOR NONLINEAR CIRCUITS TO EXTERNAL PERTURBATIONS.SEMICONDUCTORS. VOL. 49. ISSUE 3. P. 401 -405 | 6 | 100% | 0 |
| 4 | SHAMIRZAEV, SH , GULYAMOV, G , DADAMIRZAEV, MG , GULYAMOV, AG , (2009) EDDY CURRENTS IN THE P-N JUNCTION IN A MICROWAVE FIELD.SEMICONDUCTORS. VOL. 43. ISSUE 9. P. 1170-1173 | 6 | 100% | 0 |
| 5 | ALIEV, KM , KAMILOV, IK , IBRAGIMOV, KO , ABAKAROVA, NS , (2014) EFFECT OF EXTERNAL NOISE PERTURBATION ON THE CONDUCTIVITY OF NONLINEAR CIRCUITS FORMED FROM TUNNEL DIODES.JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS. VOL. 59. ISSUE 1. P. 93-95 | 5 | 100% | 0 |
| 6 | ALIEV, KM , KAMILOV, IK , IBRAGIMOV, KO , ABAKAROVA, NS , (2011) STEPWISE CURRENT OSCILLATIONS IN TUNNEL AND HIGH-FREQUENCY SEMICONDUCTOR DIODES.TECHNICAL PHYSICS LETTERS. VOL. 37. ISSUE 9. P. 809-813 | 5 | 100% | 0 |
| 7 | SCHROEDER, D , (2011) PHYSICAL FOUNDATION OF A RECENTLY PROPOSED SCHOTTKY-CONTACT MODEL.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 58. ISSUE 3. P. 874-875 | 4 | 100% | 1 |
| 8 | SHAMIRZAEV, SH , GULYAMOV, G , DADAMIRZAEV, MG , GULYAMOV, AG , (2011) EDDY CURRENTS APPEARING IN A P-N JUNCTION IN A HIGH MICROWAVE FIELD.SEMICONDUCTORS. VOL. 45. ISSUE 8. P. 1035-1037 | 4 | 100% | 1 |
| 9 | GULYAMOV, G , DADAMIRZAEV, MG , BOIDEDAEV, SR , (2000) HOT CARRIER ELECTROMOTIVE FORCE CAUSED BY SURFACE POTENTIAL MODULATION IN A STRONG MICROWAVE FIELD.SEMICONDUCTORS. VOL. 34. ISSUE 5. P. 555-557 | 5 | 100% | 3 |
| 10 | DONOVAL, D , SNOWDEN, CM , BARUS, M , RACKO, J , BEDLEK, M , (1994) CRITICAL ANALYSIS OF THE SCHOTTKY BOUNDARY-CONDITION FOR NUMERICAL-SIMULATION OF SCHOTTKY AND MESFET STRUCTURE.PHYSICA SCRIPTA. VOL. 50. ISSUE 4. P. 432 -436 | 7 | 78% | 0 |
Classes with closest relation at Level 1 |