Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 21606 | 412 | 13.1 | 37% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | ATSUGI ELECT COMMUN S FUNCT DEVICE DEV | address | 166755 | 1% | 75% | 3 |
| 2 | SINGLE VOLTAGE SUPPLY | authKW | 83375 | 1% | 38% | 3 |
| 3 | CAPACITANCE NONLINEARITY | authKW | 74114 | 0% | 100% | 1 |
| 4 | CEMEF MINES PARISTECH | address | 74114 | 0% | 100% | 1 |
| 5 | COMPOSITE TRIPLE BEAT CTB | authKW | 74114 | 0% | 100% | 1 |
| 6 | COMPUTATIONAL PRIMITIVES | authKW | 74114 | 0% | 100% | 1 |
| 7 | CURRENT MIRROR TECHNIQUES | authKW | 74114 | 0% | 100% | 1 |
| 8 | DIGITAL ARITHMETIC CIRCUITS | authKW | 74114 | 0% | 100% | 1 |
| 9 | DIRECT COUPLED FIELD EFFECT TRANSISTOR LOGIC DCFL | authKW | 74114 | 0% | 100% | 1 |
| 10 | ENHANCEMENT DEPLETION E D MESFETS | authKW | 74114 | 0% | 100% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Engineering, Electrical & Electronic | 7751 | 78% | 0% | 323 |
| 2 | Physics, Applied | 593 | 26% | 0% | 108 |
| 3 | Telecommunications | 349 | 8% | 0% | 34 |
| 4 | Computer Science, Hardware & Architecture | 74 | 3% | 0% | 11 |
| 5 | Physics, Multidisciplinary | 15 | 5% | 0% | 19 |
| 6 | Physics, Condensed Matter | 11 | 5% | 0% | 21 |
| 7 | Instruments & Instrumentation | 10 | 2% | 0% | 10 |
| 8 | Electrochemistry | 4 | 1% | 0% | 6 |
| 9 | Logic | 3 | 0% | 0% | 1 |
| 10 | Engineering, Manufacturing | 3 | 1% | 0% | 3 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | ATSUGI ELECT COMMUN S FUNCT DEVICE DEV | 166755 | 1% | 75% | 3 |
| 2 | CEMEF MINES PARISTECH | 74114 | 0% | 100% | 1 |
| 3 | GALLIUM ARSENIDE VLSI TECHNOL CHIPTEC | 74114 | 0% | 100% | 1 |
| 4 | LSI S PICAT SPECIF DESIGN TECHNOL | 74114 | 0% | 100% | 1 |
| 5 | RADIO COMMUN SYST S | 26947 | 0% | 18% | 2 |
| 6 | DISCRETE SEMICOND | 14821 | 0% | 20% | 1 |
| 7 | ATSUGI ELECT COMMUN | 6736 | 0% | 9% | 1 |
| 8 | YOKOSUKA ELECT COMMUN S | 4557 | 0% | 3% | 2 |
| 9 | PL MICROELECT | 3327 | 0% | 2% | 2 |
| 10 | ATSUGI | 2963 | 0% | 4% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | IEEE JOURNAL OF SOLID-STATE CIRCUITS | 53377 | 19% | 1% | 77 |
| 2 | IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCE | 25399 | 1% | 6% | 6 |
| 3 | ELECTRON DEVICE LETTERS | 15743 | 2% | 3% | 8 |
| 4 | ISSCC DIGEST OF TECHNICAL PAPERS | 15154 | 1% | 7% | 3 |
| 5 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 14219 | 13% | 0% | 54 |
| 6 | SOVIET MICROELECTRONICS | 8912 | 1% | 2% | 6 |
| 7 | REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES | 6879 | 2% | 1% | 8 |
| 8 | ELECTRONICS LETTERS | 4706 | 12% | 0% | 50 |
| 9 | IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 3976 | 1% | 1% | 6 |
| 10 | IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA | 3048 | 1% | 1% | 6 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | MCNALLY, PJ , ROSENBERG, JJ , JACKSON, TN , RAMIREZ, JC , (1993) MODELING AND EXPERIMENTAL-ANALYSIS OF THE IMPACT OF PROCESS-INDUCED STRESS ON THE ELECTRICAL PERFORMANCE OF GAAS-MESFETS.SOLID-STATE ELECTRONICS. VOL. 36. ISSUE 11. P. 1597-1612 | 10 | 100% | 5 |
| 2 | LO, SH , LEE, CP , (1990) 2-DIMENSIONAL SIMULATION OF ORIENTATION EFFECTS IN SELF-ALIGNED GAAS-MESFETS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 37. ISSUE 10. P. 2130 -2140 | 13 | 81% | 4 |
| 3 | WELBOURN, AD , (1982) GIGABIT LOGIC - A REVIEW.IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION. VOL. 129. ISSUE 5. P. 157 -172 | 31 | 53% | 3 |
| 4 | KANAN, R , DECLERCQ, MJ , (1999) PCFL3: A LOW-POWER, HIGH-SPEED, SINGLE-ENDED LOGIC FAMILY.IEEE JOURNAL OF SOLID-STATE CIRCUITS. VOL. 34. ISSUE 9. P. 1259 -1269 | 7 | 88% | 1 |
| 5 | ONODERA, T , NISHI, H , (1989) THEORETICAL-STUDY OF THE PIEZOELECTRIC EFFECT ON GAAS-MESFETS ON (100), (011), AND (111BAR) GA, AND (111) AS SUBSTRATES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 36. ISSUE 9. P. 1580-1585 | 10 | 83% | 9 |
| 6 | NOOSHABADI, S , MONTIEL-NELSON, JA , (2004) FAST FEEDTHROUGH LOGIC: A HIGH PERFORMANCE LOGIC FAMILY FOR GAAS.IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS. VOL. 51. ISSUE 11. P. 2189-2203 | 8 | 57% | 11 |
| 7 | HUANG, QA , LU, SJ , TONG, QY , (1991) A NEW INTERPRETATION OF THE ORIENTATION EFFECT IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS.JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. VOL. 30. ISSUE 1A. P. L11-L14 | 7 | 100% | 0 |
| 8 | MCNALLY, PJ , COOPER, LS , ROSENBERG, JJ , JACKSON, TN , (1988) INVESTIGATION OF STRESS EFFECTS ON THE DIRECT-CURRENT CHARACTERISTICS OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS THROUGH THE USE OF EXTERNALLY APPLIED LOADS.APPLIED PHYSICS LETTERS. VOL. 52. ISSUE 21. P. 1800-1802 | 9 | 90% | 1 |
| 9 | SHIMIZU, S , YOSHIHARA, K , TERADA, T , ISHIDA, K , KITAURA, Y , TAKUBO, C , (1990) AN ECL-COMPATIBLE GAAS SCFL DESIGN METHOD.IEEE JOURNAL OF SOLID-STATE CIRCUITS. VOL. 25. ISSUE 2. P. 539-545 | 7 | 100% | 1 |
| 10 | BERNAL, A , GUYOT, A , (1998) A NEW LOW-POWER GAAS TWO-SINGLE-PORT MEMORY CELL.IEEE JOURNAL OF SOLID-STATE CIRCUITS. VOL. 33. ISSUE 7. P. 1103-1110 | 8 | 62% | 0 |
Classes with closest relation at Level 1 |