Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
4634 | 1751 | 20.8 | 64% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
746 | 2 | BETA FESI2//SILICIDES//SERIES RESISTANCE | 12475 |
4634 | 1 | NICKEL SILICIDE//NISI//NI SILICIDE | 1751 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | NICKEL SILICIDE | authKW | 863121 | 6% | 50% | 100 |
2 | NISI | authKW | 643636 | 4% | 56% | 66 |
3 | NI SILICIDE | authKW | 479143 | 3% | 60% | 46 |
4 | SILICIDES | authKW | 274453 | 8% | 11% | 143 |
5 | COSI2 | authKW | 263700 | 2% | 46% | 33 |
6 | COBALT SILICIDE | authKW | 210026 | 2% | 38% | 32 |
7 | SALICIDE | authKW | 132555 | 1% | 36% | 21 |
8 | FULL SILICIDATION | authKW | 122060 | 0% | 100% | 7 |
9 | GERMANOSILICIDE | authKW | 117696 | 1% | 75% | 9 |
10 | SILICIDATION | authKW | 117678 | 1% | 38% | 18 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 18371 | 65% | 0% | 1133 |
2 | Materials Science, Coatings & Films | 9798 | 17% | 0% | 303 |
3 | Physics, Condensed Matter | 2776 | 22% | 0% | 390 |
4 | Nanoscience & Nanotechnology | 2497 | 13% | 0% | 236 |
5 | Materials Science, Multidisciplinary | 2399 | 28% | 0% | 488 |
6 | Engineering, Electrical & Electronic | 2124 | 22% | 0% | 388 |
7 | Optics | 460 | 8% | 0% | 142 |
8 | Metallurgy & Metallurgical Engineering | 357 | 6% | 0% | 100 |
9 | Electrochemistry | 207 | 4% | 0% | 62 |
10 | Microscopy | 141 | 1% | 0% | 19 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | VAKGROEP VASTE STOFWETEN PEN | 89675 | 0% | 86% | 6 |
2 | VAKGRP VASTE STOFWETEN PEN | 71196 | 0% | 58% | 7 |
3 | MIKROELEKT ZENTRUM A | 69748 | 0% | 100% | 4 |
4 | IM2NP | 52176 | 3% | 6% | 47 |
5 | KRISTALLOG STUDIE VASTE STOF | 48432 | 0% | 56% | 5 |
6 | VAKGRP VASTE STOF WETEN PEN | 39232 | 0% | 75% | 3 |
7 | NAKA TORY | 34874 | 0% | 100% | 2 |
8 | TEXAS RUMENTS | 31131 | 0% | 36% | 5 |
9 | TSMC | 30995 | 0% | 44% | 4 |
10 | CNRS UPR 5001 | 23248 | 0% | 67% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MICROELECTRONIC ENGINEERING | 32169 | 8% | 1% | 137 |
2 | THIN SOLID FILMS | 7617 | 7% | 0% | 127 |
3 | JOURNAL OF APPLIED PHYSICS | 7535 | 12% | 0% | 217 |
4 | IEEE ELECTRON DEVICE LETTERS | 6657 | 3% | 1% | 59 |
5 | APPLIED PHYSICS LETTERS | 4175 | 9% | 0% | 166 |
6 | ELECTROCHEMICAL AND SOLID STATE LETTERS | 3870 | 2% | 1% | 31 |
7 | APPLIED SURFACE SCIENCE | 2688 | 4% | 0% | 75 |
8 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999 | 3% | 0% | 60 |
9 | JOURNAL OF THE KOREAN INSTITUTE OF METALS AND MATERIALS | 1962 | 0% | 2% | 6 |
10 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1694 | 2% | 0% | 41 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | NICKEL SILICIDE | 863121 | 6% | 50% | 100 | Search NICKEL+SILICIDE | Search NICKEL+SILICIDE |
2 | NISI | 643636 | 4% | 56% | 66 | Search NISI | Search NISI |
3 | NI SILICIDE | 479143 | 3% | 60% | 46 | Search NI+SILICIDE | Search NI+SILICIDE |
4 | SILICIDES | 274453 | 8% | 11% | 143 | Search SILICIDES | Search SILICIDES |
5 | COSI2 | 263700 | 2% | 46% | 33 | Search COSI2 | Search COSI2 |
6 | COBALT SILICIDE | 210026 | 2% | 38% | 32 | Search COBALT+SILICIDE | Search COBALT+SILICIDE |
7 | SALICIDE | 132555 | 1% | 36% | 21 | Search SALICIDE | Search SALICIDE |
8 | FULL SILICIDATION | 122060 | 0% | 100% | 7 | Search FULL+SILICIDATION | Search FULL+SILICIDATION |
9 | GERMANOSILICIDE | 117696 | 1% | 75% | 9 | Search GERMANOSILICIDE | Search GERMANOSILICIDE |
10 | SILICIDATION | 117678 | 1% | 38% | 18 | Search SILICIDATION | Search SILICIDATION |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ZHANG, SL , OSTLING, M , (2003) METAL SILICIDES IN CMOS TECHNOLOGY: PAST, PRESENT, AND FUTURE TRENDS.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 28. ISSUE 1. P. 1 -129 | 161 | 34% | 212 |
2 | LAVOIE, C , DETAVERNIER, C , CABRAL, C , D'HEURLE, FM , KELLOCK, AJ , JORDAN-SWEET, J , HARPER, JME , (2006) EFFECTS OF ADDITIVE ELEMENTS ON THE PHASE FORMATION AND MORPHOLOGICAL STABILITY OF NICKEL MONOSILICIDE FILMS.MICROELECTRONIC ENGINEERING. VOL. 83. ISSUE 11-12. P. 2042-2054 | 57 | 79% | 70 |
3 | DE SCHUTTER, B , DE KEYSER, K , LAVOIE, C , DETAVERNIER, C , (2016) TEXTURE IN THIN FILM SILICIDES AND GERMANIDES: A REVIEW.APPLIED PHYSICS REVIEWS. VOL. 3. ISSUE 3. P. - | 71 | 53% | 0 |
4 | LAVOIE, C , D'HEURLE, FM , DETAVERNIER, C , CABRAL, C , (2003) TOWARDS IMPLEMENTATION OF A NICKEL SILICIDE PROCESS FOR CMOS TECHNOLOGIES.MICROELECTRONIC ENGINEERING. VOL. 70. ISSUE 2-4. P. 144 -157 | 41 | 72% | 260 |
5 | MANGELINCK, D , HOUMMADA, K , PANCIERA, F , EL KOUSSEIFI, M , BLUM, I , DESCOINS, M , BERTOGLIO, M , PORTAVOCE, A , PERRIN, C , PUTERO, M , (2014) PROGRESS IN THE UNDERSTANDING OF NI SILICIDE FORMATION FOR ADVANCED MOS STRUCTURES.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 211. ISSUE 1. P. 152-165 | 38 | 75% | 4 |
6 | VANTOMME, A , TEMST, K , DETAVERNIER, C , KNAEPEN, W , VAN BOCKSTAEL, C , COMRIE, CM , SMEETS, D , DEMEULEMEESTER, J , (2010) THE INFLUENCE OF PT REDISTRIBUTION ON NI1-XPTXSI GROWTH PROPERTIES.JOURNAL OF APPLIED PHYSICS. VOL. 108. ISSUE 4. P. - | 30 | 88% | 12 |
7 | PIAO, YH , ZHU, ZW , GAO, XD , KARABKO, A , HU, C , QIU, ZJ , LUO, J , ZHANG, ZB , ZHANG, SL , WU, DP , (2012) EXTENSIVE RAMAN SPECTROSCOPIC INVESTIGATION OF ULTRATHIN CO1-XNIXSI2 FILMS GROWN ON SI(100).JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 30. ISSUE 4. P. - | 27 | 96% | 1 |
8 | SMEETS, D , DEMEULEMEESTER, J , DE KEYSER, K , DEDUYTSCHE, D , DETAVERNIER, C , COMRIE, CM , THERON, CC , LAVOIE, C , VANTOMME, A , (2008) NUCLEATION AND DIFFUSION DURING GROWTH OF TERNARY CO1-XNIXSI2 THIN FILMS STUDIED BY COMPLEMENTARY TECHNIQUES IN REAL TIME.JOURNAL OF APPLIED PHYSICS. VOL. 104. ISSUE 9. P. - | 29 | 94% | 5 |
9 | LIU, QB , WANG, GL , GUO, YL , KE, XX , LIU, H , ZHAO, C , LUO, J , (2015) OPTIMIZATION OF A TWO-STEP NI(5% PT) GERMANOSILICIDATION PROCESS AND THE REDISTRIBUTION OF PT IN NI(PT)SI1-XGEX GERMANOSILICIDE.VACUUM. VOL. 111. ISSUE . P. 114 -118 | 23 | 96% | 2 |
10 | DEMEULEMEESTER, J , SMEETS, D , COMRIE, CM , BARRADAS, NP , VIEIRA, A , VAN BOCKSTAEL, C , DETAVERNIER, C , TEMST, K , VANTOMME, A , (2013) ON THE GROWTH KINETICS OF NI(PT) SILICIDE THIN FILMS.JOURNAL OF APPLIED PHYSICS. VOL. 113. ISSUE 16. P. - | 27 | 87% | 1 |
Classes with closest relation at Level 1 |