Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 31096 | 158 | 10.9 | 25% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
| 4090 | 2 | MAGNET SENSOR//SOVIET PHYSICS SEMICONDUCTORS-USSR//RADIATION RESISTANT HALL SENSORS | 589 |
| 31096 | 1 | ALGAAS DIODES//ALGAASSI//P DEGREES REGION | 158 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | ALGAAS DIODES | authKW | 193263 | 1% | 100% | 1 |
| 2 | ALGAASSI | authKW | 193263 | 1% | 100% | 1 |
| 3 | P DEGREES REGION | authKW | 193263 | 1% | 100% | 1 |
| 4 | SINGLE STEP LPE | authKW | 193263 | 1% | 100% | 1 |
| 5 | SOVIET PHYSICS SEMICONDUCTORS-USSR | journal | 180051 | 46% | 1% | 72 |
| 6 | RECOMBINATION BARRIER | authKW | 96630 | 1% | 50% | 1 |
| 7 | SPECIAL TECHNOL DESIGN OFF | address | 96630 | 1% | 50% | 1 |
| 8 | MICROELECT SENSORS MEMS | address | 10735 | 1% | 6% | 1 |
| 9 | LATTICE DEFECT | authKW | 10036 | 1% | 3% | 2 |
| 10 | SENSOR MICROELECT | address | 8783 | 1% | 5% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 2615 | 66% | 0% | 105 |
| 2 | Physics, Applied | 366 | 32% | 0% | 51 |
| 3 | Engineering, Electrical & Electronic | 42 | 12% | 0% | 19 |
| 4 | Physics, Multidisciplinary | 39 | 9% | 0% | 14 |
| 5 | Materials Science, Multidisciplinary | 28 | 13% | 0% | 20 |
| 6 | Microscopy | 4 | 1% | 0% | 1 |
| 7 | Telecommunications | 3 | 2% | 0% | 3 |
| 8 | Materials Science, Coatings & Films | 2 | 1% | 0% | 2 |
| 9 | Multidisciplinary Sciences | 1 | 1% | 0% | 1 |
| 10 | Materials Science, Ceramics | 0 | 1% | 0% | 1 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SPECIAL TECHNOL DESIGN OFF | 96630 | 1% | 50% | 1 |
| 2 | MICROELECT SENSORS MEMS | 10735 | 1% | 6% | 1 |
| 3 | SENSOR MICROELECT | 8783 | 1% | 5% | 1 |
| 4 | SOLAR PHYS PROD CORP | 8051 | 1% | 4% | 1 |
| 5 | PHYS SEMICOND | 2032 | 1% | 1% | 1 |
| 6 | PHYSICOTECH | 240 | 1% | 0% | 1 |
| 7 | RADIOENGN ELECT | 211 | 1% | 0% | 1 |
| 8 | SEMICOND PHYS | 140 | 1% | 0% | 2 |
| 9 | HIGH TECHNOL | 115 | 1% | 0% | 1 |
| 10 | INTERDISCIPLINARY SCI ENGN | 57 | 1% | 0% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 180051 | 46% | 1% | 72 |
| 2 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2150 | 9% | 0% | 15 |
| 3 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 877 | 1% | 0% | 2 |
| 4 | JETP LETTERS | 806 | 4% | 0% | 7 |
| 5 | IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA | 781 | 2% | 0% | 3 |
| 6 | ELECTRON DEVICE LETTERS | 640 | 1% | 0% | 1 |
| 7 | ELECTRONICS | 494 | 1% | 0% | 1 |
| 8 | SOLID-STATE ELECTRONICS | 483 | 3% | 0% | 5 |
| 9 | TECHNICAL PHYSICS LETTERS | 472 | 3% | 0% | 4 |
| 10 | SEMICONDUCTORS | 453 | 3% | 0% | 4 |
Author Key Words |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | ALGAAS DIODES | 193263 | 1% | 100% | 1 | Search ALGAAS+DIODES | Search ALGAAS+DIODES |
| 2 | ALGAASSI | 193263 | 1% | 100% | 1 | Search ALGAASSI | Search ALGAASSI |
| 3 | P DEGREES REGION | 193263 | 1% | 100% | 1 | Search P+DEGREES+REGION | Search P+DEGREES+REGION |
| 4 | SINGLE STEP LPE | 193263 | 1% | 100% | 1 | Search SINGLE+STEP+LPE | Search SINGLE+STEP+LPE |
| 5 | RECOMBINATION BARRIER | 96630 | 1% | 50% | 1 | Search RECOMBINATION+BARRIER | Search RECOMBINATION+BARRIER |
| 6 | LATTICE DEFECT | 10036 | 1% | 3% | 2 | Search LATTICE+DEFECT | Search LATTICE+DEFECT |
| 7 | NEGATIVE RESISTANCE | 1237 | 1% | 1% | 1 | Search NEGATIVE+RESISTANCE | Search NEGATIVE+RESISTANCE |
| 8 | RADIATION EFFECT | 876 | 1% | 0% | 1 | Search RADIATION+EFFECT | Search RADIATION+EFFECT |
| 9 | RADIATION DEFECTS | 853 | 1% | 0% | 1 | Search RADIATION+DEFECTS | Search RADIATION+DEFECTS |
| 10 | NEUTRON IRRADIATION | 294 | 1% | 0% | 1 | Search NEUTRON+IRRADIATION | Search NEUTRON+IRRADIATION |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | KHAN, WI , AL-QENAIE, AYM , THYAGARAJ, JC , (1999) ANNEALING AND TRANSIENT EFFECTS IN SOME GAAS DIODES.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 14. ISSUE 4. P. 362 -365 | 6 | 60% | 1 |
| 2 | KOROLEV, VL , ROSSIN, VV , SIDOROV, VG , SHALABUTOV, YK , (1985) EFFICIENCY OF LUMINESCENCE IN COMPENSATED GALLIUM-ARSENIDE.SOVIET PHYSICS SEMICONDUCTORS-USSR. VOL. 19. ISSUE 5. P. 575-576 | 5 | 100% | 0 |
| 3 | GAMAGE, SK , HENDERSON, HT , (2006) STUDY OF THE BEHAVIOUR OF A DI DIODE UNDER THE INFLUENCE OF A SURFACE MAGNETIC FIELD.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 39. ISSUE 11. P. 2335-2338 | 2 | 100% | 1 |
| 4 | KOROLEV, VL , SIDOROV, VG , (1988) MECHANISMS OF RADIATIVE RECOMBINATION IN HEAVILY DOPED COMPENSATED GALLIUM-ARSENIDE.SOVIET PHYSICS SEMICONDUCTORS-USSR. VOL. 22. ISSUE 8. P. 862-866 | 4 | 100% | 1 |
| 5 | SAPAEV, B , SAIDOV, AS , (2004) THE SYNTHESIS AND PHOTOELECTRIC PROPERTIES OF SI-(SI-2)(1-X)(ZNS)(X) EPITAXIAL STRUCTURES.TECHNICAL PHYSICS LETTERS. VOL. 30. ISSUE 9. P. 715-716 | 2 | 100% | 0 |
| 6 | DZHIBUTI, ZV , DOLIDZE, ND , (2001) ON THE PROPERTIES OF A RADIATION-INDUCED DEFECT RESPONSIBLE FOR THE 1.0-EV IR ABSORPTION BAND IN GALLIUM ARSENIDE.TECHNICAL PHYSICS LETTERS. VOL. 27. ISSUE 12. P. 1008-1009 | 2 | 100% | 0 |
| 7 | GLINCHUK, KD , LUKAT, K , (1982) NONTRIVIAL ANNEALING-INDUCED INCREASE OF THE NEAR-INTRINSIC EMISSION INTENSITY IN GAMMA-IRRADIATED GAAS.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 71. ISSUE 2. P. K187-K190 | 5 | 100% | 1 |
| 8 | RAJALAKSHMI, R , SRIVASTAVA, AK , SHARMA, DK , CHANDVANKAR, SS , ARORA, BM , (1990) INVESTIGATION OF THE ROLE OF TAIL-STATES IN BROAD-BAND PHOTOLUMINESCENCE OF HEAVILY DOPED IN0.72GA0.28AS0.60P0.40-GE.SOLID STATE COMMUNICATIONS. VOL. 73. ISSUE 9. P. 589-591 | 3 | 100% | 0 |
| 9 | DZHIBUTI, ZV , DOLIDZE, ND , (2000) ON THE POSSIBLE SPATIAL ORIENTATION OF A RADIATION-INDUCED DEFECT RESPONSIBLE FOR THE 1.0-EV IR ABSORPTION BAND IN GALLIUM ARSENIDE.TECHNICAL PHYSICS LETTERS. VOL. 26. ISSUE 9. P. 789-790 | 2 | 100% | 0 |
| 10 | PARK, SG , CHOE, BD , (1989) SEMI-INSULATING P-0-REGION IN SI-DOPED GAAS DIODES.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. VOL. 28. ISSUE 7. P. 1284-1285 | 3 | 100% | 0 |
Classes with closest relation at Level 1 |