Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
21140 | 431 | 14.2 | 59% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
579 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC | 14235 |
21140 | 1 | REAL SPACE TRANSFER//CHARGE INJECTION TRANSISTOR//HOT ELECTRON LASER | 431 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | REAL SPACE TRANSFER | authKW | 442785 | 2% | 63% | 10 |
2 | CHARGE INJECTION TRANSISTOR | authKW | 141694 | 0% | 100% | 2 |
3 | HOT ELECTRON LASER | authKW | 141694 | 0% | 100% | 2 |
4 | LONGITUDINAL TRANSPORT | authKW | 141694 | 0% | 100% | 2 |
5 | REAL SPACE TRANSFER RST | authKW | 94461 | 0% | 67% | 2 |
6 | AMSRL EP EF | address | 70847 | 0% | 100% | 1 |
7 | BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR BUNDR | authKW | 70847 | 0% | 100% | 1 |
8 | BULK BARRIER TRANSISTOR | authKW | 70847 | 0% | 100% | 1 |
9 | COORDINATED SCI ELECT ENGN | address | 70847 | 0% | 100% | 1 |
10 | DELTA DOPED DELTA DOPED | authKW | 70847 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 2674 | 51% | 0% | 218 |
2 | Physics, Condensed Matter | 2037 | 37% | 0% | 158 |
3 | Engineering, Electrical & Electronic | 1278 | 33% | 0% | 142 |
4 | Physics, Multidisciplinary | 73 | 8% | 0% | 33 |
5 | Optics | 70 | 7% | 0% | 29 |
6 | Materials Science, Multidisciplinary | 59 | 12% | 0% | 50 |
7 | Nanoscience & Nanotechnology | 58 | 5% | 0% | 21 |
8 | Telecommunications | 13 | 2% | 0% | 9 |
9 | Crystallography | 1 | 1% | 0% | 5 |
10 | Spectroscopy | 0 | 1% | 0% | 4 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | AMSRL EP EF | 70847 | 0% | 100% | 1 |
2 | COORDINATED SCI ELECT ENGN | 70847 | 0% | 100% | 1 |
3 | ELE POWER SOURCES DIRECTORATEMS | 70847 | 0% | 100% | 1 |
4 | ELECT COMP ENGN COMP ELE GRP | 70847 | 0% | 100% | 1 |
5 | EPSD AMSRLEPEF | 70847 | 0% | 100% | 1 |
6 | HIGH FREQUENCY DEVICES IC GRP | 70847 | 0% | 100% | 1 |
7 | IIS MINATO KU | 70847 | 0% | 100% | 1 |
8 | NIZHNI NOVGOROD PHYSICOTECH UNIV | 70847 | 0% | 100% | 1 |
9 | PHYS MICROSTRU | 70847 | 0% | 100% | 1 |
10 | STATE MECH PHYS | 70847 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID-STATE ELECTRONICS | 6885 | 7% | 0% | 31 |
2 | EDN MAGAZINE-ELECTRICAL DESIGN NEWS | 6157 | 0% | 4% | 2 |
3 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 4683 | 5% | 0% | 23 |
4 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 3230 | 4% | 0% | 16 |
5 | IEE PROCEEDINGS-OPTOELECTRONICS | 3076 | 1% | 1% | 6 |
6 | APPLIED PHYSICS LETTERS | 2675 | 15% | 0% | 65 |
7 | SEMICONDUCTORS | 2671 | 4% | 0% | 16 |
8 | IEEE ELECTRON DEVICE LETTERS | 2526 | 4% | 0% | 18 |
9 | SUPERLATTICES AND MICROSTRUCTURES | 2165 | 3% | 0% | 14 |
10 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 1839 | 5% | 0% | 20 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GRIBNIKOV, ZS , HESS, K , KOSINOVSKY, GA , (1995) NONLOCAL AND NONLINEAR TRANSPORT IN SEMICONDUCTORS - REAL-SPACE TRANSFER EFFECTS.JOURNAL OF APPLIED PHYSICS. VOL. 77. ISSUE 4. P. 1337 -1373 | 67 | 61% | 75 |
2 | WU, CL , HSU, WC , (1996) ENHANCED RESONANT TUNNELING REAL-SPACE TRANSFER IN DELTA-DOPED GAAS/INGAAS GATED DUAL-CHANNEL TRANSISTORS GROWN BY MOCVD.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 43. ISSUE 2. P. 207-212 | 27 | 82% | 15 |
3 | LURYI, S , (1990) CHARGE INJECTION TRANSISTORS AND LOGIC-CIRCUITS.SUPERLATTICES AND MICROSTRUCTURES. VOL. 8. ISSUE 4. P. 395-404 | 18 | 100% | 17 |
4 | BAI, F , LI, LP , (2016) AN EMPIRICAL I-V MODEL OF TUNNELING REAL-SPACE TRANSFER TRANSISTORS FOR MONOSTABLE-BISTABLE TRANSITION LOGIC ELEMENT APPLICATION.INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS. VOL. 29. ISSUE 1. P. 77 -82 | 8 | 100% | 0 |
5 | SU, JS , HSU, WC , LIN, YS , LIN, W , (1997) CONTROLLABLE DRAIN CUT-IN VOLTAGE WITH STRONG NEGATIVE DIFFERENTIAL RESISTANCE IN GAAS/INGAAS REAL-SPACE TRANSFER HETEROSTRUCTURE.APPLIED PHYSICS LETTERS. VOL. 70. ISSUE 8. P. 1002-1004 | 12 | 100% | 1 |
6 | BELEVSKII, PA , VINOSLAVKII, MN , POROSHIN, VN , BAIDUS, NV , ZVONKOV, BN , (2014) FAR-INFRARED RADIATION FROM N-INGAAS/GAAS QUANTUM-WELL HETEROSTRUCTURES IN HIGH LATERAL ELECTRIC FIELDS UNDER INJECTION CONDITIONS.SEMICONDUCTORS. VOL. 48. ISSUE 5. P. 625 -629 | 9 | 82% | 0 |
7 | BELENKY, GL , GARBINSKI, PA , LURYI, S , MASTRAPASQUA, M , CHO, AY , HAMM, RA , HAYES, TR , LASKOWSKI, EJ , SIVCO, DL , SMITH, PR , (1993) COLLECTOR-UP LIGHT-EMITTING CHARGE INJECTION TRANSISTORS IN N-INGAAS/INALAS/P-INGAAS AND N-INGAAS/INP/P-INGAAS HETEROSTRUCTURES.JOURNAL OF APPLIED PHYSICS. VOL. 73. ISSUE 12. P. 8618-8627 | 19 | 68% | 7 |
8 | LAI, JT , LEE, JYM , (1995) ENHANCED ELECTRON-TRANSFER IN REAL-SPACE TRANSFER DEVICES USING STRAINED INXGA1-XAS (X=0.15, 0.25) CHANNEL LAYERS.JOURNAL OF CRYSTAL GROWTH. VOL. 150. ISSUE 1-4. P. 1379-1383 | 15 | 79% | 0 |
9 | LURYI, S , MENSZ, PM , PINTO, MR , GARBINSKI, PA , CHO, AY , SIVCO, DL , (1990) CHARGE INJECTION LOGIC.APPLIED PHYSICS LETTERS. VOL. 57. ISSUE 17. P. 1787-1789 | 14 | 100% | 26 |
10 | MASTRAPASQUA, M , LURYI, S , BELENKY, GL , GARBINSKI, PA , CHO, AY , SIVCO, DL , (1993) MULTITERMINAL LIGHT-EMITTING LOGIC DEVICE ELECTRICALLY REPROGRAMMABLE BETWEEN OR AND NAND FUNCTIONS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 40. ISSUE 8. P. 1371-1377 | 12 | 100% | 8 |
Classes with closest relation at Level 1 |