Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
32752 | 134 | 14.1 | 30% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
2384 | 2 | IR LASERS//OPT SENSORS SPECT//SOVIET PHYSICS SEMICONDUCTORS-USSR | 4257 |
32752 | 1 | AS10GE15TE75 PELLETS//ELECTRICAL FIELD RECORDING//IONIZATION IN ELECTRIC FIELD | 134 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | AS10GE15TE75 PELLETS | authKW | 227877 | 1% | 100% | 1 |
2 | ELECTRICAL FIELD RECORDING | authKW | 227877 | 1% | 100% | 1 |
3 | IONIZATION IN ELECTRIC FIELD | authKW | 227877 | 1% | 100% | 1 |
4 | LASER LIGHT RECORDING | authKW | 227877 | 1% | 100% | 1 |
5 | SEMICOND ELECT CHAIR | address | 227877 | 1% | 100% | 1 |
6 | TEMPERATURE PRESSURE AND FREQUENCY DEPENDENCE | authKW | 227877 | 1% | 100% | 1 |
7 | ZERO RADIUS POTENTIAL | authKW | 227877 | 1% | 100% | 1 |
8 | DEEP CENTER | authKW | 113938 | 1% | 50% | 1 |
9 | ARMY STRATEG COMMAND | address | 56968 | 1% | 25% | 1 |
10 | SOVIET PHYSICS SEMICONDUCTORS-USSR | journal | 50137 | 26% | 1% | 35 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 1821 | 60% | 0% | 81 |
2 | Physics, Applied | 179 | 25% | 0% | 34 |
3 | Materials Science, Ceramics | 82 | 5% | 0% | 7 |
4 | Materials Science, Multidisciplinary | 33 | 14% | 0% | 19 |
5 | Physics, Multidisciplinary | 27 | 8% | 0% | 11 |
6 | Materials Science, Coatings & Films | 8 | 2% | 0% | 3 |
7 | Engineering, Electrical & Electronic | 4 | 6% | 0% | 8 |
8 | Engineering, Aerospace | 2 | 1% | 0% | 1 |
9 | Optics | 2 | 3% | 0% | 4 |
10 | Crystallography | 1 | 1% | 0% | 2 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SEMICOND ELECT CHAIR | 227877 | 1% | 100% | 1 |
2 | ARMY STRATEG COMMAND | 56968 | 1% | 25% | 1 |
3 | SPACE MISSILE DEF COMMAND | 18226 | 1% | 4% | 2 |
4 | AF IOFFE PHYSICOTECH | 4138 | 7% | 0% | 10 |
5 | THOMAS J WATSON | 45 | 1% | 0% | 1 |
6 | ELECT COMP ENGN | 17 | 3% | 0% | 4 |
7 | PL PHYS | 2 | 1% | 0% | 1 |
8 | COMP SCI | 0 | 1% | 0% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 50137 | 26% | 1% | 35 |
2 | SEMICONDUCTORS | 16391 | 16% | 0% | 22 |
3 | ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS | 830 | 1% | 0% | 1 |
4 | PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 720 | 3% | 0% | 4 |
5 | JOURNAL OF NON-CRYSTALLINE SOLIDS | 480 | 5% | 0% | 7 |
6 | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 397 | 1% | 0% | 1 |
7 | ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS | 346 | 1% | 0% | 2 |
8 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 276 | 4% | 0% | 5 |
9 | JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 181 | 1% | 0% | 2 |
10 | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 169 | 1% | 0% | 2 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | AS10GE15TE75 PELLETS | 227877 | 1% | 100% | 1 | Search AS10GE15TE75+PELLETS | Search AS10GE15TE75+PELLETS |
2 | ELECTRICAL FIELD RECORDING | 227877 | 1% | 100% | 1 | Search ELECTRICAL+FIELD+RECORDING | Search ELECTRICAL+FIELD+RECORDING |
3 | IONIZATION IN ELECTRIC FIELD | 227877 | 1% | 100% | 1 | Search IONIZATION+IN+ELECTRIC+FIELD | Search IONIZATION+IN+ELECTRIC+FIELD |
4 | LASER LIGHT RECORDING | 227877 | 1% | 100% | 1 | Search LASER+LIGHT+RECORDING | Search LASER+LIGHT+RECORDING |
5 | TEMPERATURE PRESSURE AND FREQUENCY DEPENDENCE | 227877 | 1% | 100% | 1 | Search TEMPERATURE+PRESSURE+AND+FREQUENCY+DEPENDENCE | Search TEMPERATURE+PRESSURE+AND+FREQUENCY+DEPENDENCE |
6 | ZERO RADIUS POTENTIAL | 227877 | 1% | 100% | 1 | Search ZERO+RADIUS+POTENTIAL | Search ZERO+RADIUS+POTENTIAL |
7 | DEEP CENTER | 113938 | 1% | 50% | 1 | Search DEEP+CENTER | Search DEEP+CENTER |
8 | PULSE CIRCUITS | 13403 | 1% | 6% | 1 | Search PULSE+CIRCUITS | Search PULSE+CIRCUITS |
9 | AC CONDUCTANCE | 12658 | 1% | 6% | 1 | Search AC+CONDUCTANCE | Search AC+CONDUCTANCE |
10 | LIQUID SILICON | 12658 | 1% | 6% | 1 | Search LIQUID+SILICON | Search LIQUID+SILICON |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | AVERKIEV, NS , GUTKIN, AA , SEDOV, VE , (2001) PHOTOLUMINESCENCE OF CUGATEAS AND CUGASNGA COMPLEXES IN N-GAAS UNDER RESONANCE POLARIZED EXCITATION.SEMICONDUCTORS. VOL. 35. ISSUE 2. P. 170-174 | 13 | 93% | 0 |
2 | AVERKIEV, NS , GUTKIN, AA , RESHCHIKOV, MA , (1999) CHANGE IN THE ENERGY OF JAHN-TELLER CONFIGURATIONS OF VACANCY-DONOR COMPLEXES INDUCED BY UNIAXIAL STRAIN.SEMICONDUCTORS. VOL. 33. ISSUE 11. P. 1196-1201 | 9 | 82% | 3 |
3 | GUTKIN, AA , RESHCHIKOV, MA , (2003) THERMAL TRANSPORT OF CHARGE AND POLARIZATION OF 1.2-EV LUMINESCENCE BROAD BAND IN UNIAXIALLY STRAINED N-GAAS : TE.SEMICONDUCTORS. VOL. 37. ISSUE 3. P. 271 -275 | 6 | 100% | 0 |
4 | GUTKIN, AA , RESHCHIKOV, MA , SEDOV, VE , (2000) COMPARISON OF THE POLARIZATIONS OF THE 1.2-EV PHOTOLUMINESCENCE BAND IN N-GAAS : TE UNDER UNIAXIAL PRESSURE AND RESONANCE POLARIZED EXCITATION.SEMICONDUCTORS. VOL. 34. ISSUE 10. P. 1151-1156 | 8 | 80% | 0 |
5 | GUTKIN, AA , RESHCHIKOV, MA , (2004) PIEZOSPECTROSCOPIC STUDY OF THE EMISSION BAND OF N-GAAS : S PEAKED AT ABOUT 1.2 EV.SEMICONDUCTORS. VOL. 38. ISSUE 7. P. 791-795 | 6 | 86% | 0 |
6 | GUTKIN, AA , RESHCHIKOV, MA , SEDOV, VE , (1999) CHARACTERISTIC FEATURES OF THE TEMPERATURE DEPENDENCE OF THE PHOTOLUMINESCENCE POLARIZATION OF {GA VACANCY}-SN-GA(SI-GA) COMPLEXES IN GAAS PRODUCED AS A RESULT OF RESONANT POLARIZED EXCITATION.SEMICONDUCTORS. VOL. 33. ISSUE 1. P. 37-40 | 6 | 100% | 0 |
7 | AVERKIEV, NS , GUTKIN, AA , OSIPOV, EB , SEDOV, VE , SMIRNOV, NA , TSATSULNIKOV, AF , (1991) INFLUENCE OF MIXING OF ELECTRON-STATES BY THE ELECTRONIC-VIBRATIONAL INTERACTION ON THE STRUCTURE AND PIEZOSPECTROSCOPIC PROPERTIES OF JAHN-TELLER ACCEPTORS IN GAAS.SOVIET PHYSICS SEMICONDUCTORS-USSR. VOL. 25. ISSUE 11. P. 1190 -1195 | 8 | 100% | 0 |
8 | GUTKIN, AA , ERMAKOVA, AV , (2003) ANALYSIS OF THE EMISSION BAND OF VGATEAS COMPLEXES IN N-GAAS UNDER UNIAXIAL PRESSURE.SEMICONDUCTORS. VOL. 37. ISSUE 8. P. 884-888 | 5 | 100% | 0 |
9 | BULYARSKII, SV , GRUSHKO, NS , ZHUKOV, AV , (2000) CALCULATION OF THE PROBABILITY OF OPTICAL TRANSITIONS IN STRONG ELECTRIC FIELDS.JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS. VOL. 91. ISSUE 5. P. 945 -951 | 5 | 100% | 4 |
10 | GUTKIN, AA , RESHCHIKOV, MA , SEDOV, VE , PIOTROWSKI, T , PULTORAK, J , (1998) OPTICAL CHARACTERISTICS OF 1.18-EV LUMINESCENCE BAND COMPLEXES IN N-GAAS : SN(SI): RESULTS OF A PHOTOLUMINESCENCE STUDY WITH POLARIZED RESONANT EXCITATION.SEMICONDUCTORS. VOL. 32. ISSUE 1. P. 33 -39 | 6 | 86% | 4 |
Classes with closest relation at Level 1 |