Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
1611 | 2569 | 16.2 | 67% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1385 | 2 | POLYCRYSTALLINE SILICON//POLY SI//THIN FILM TRANSISTORS | 8137 |
1611 | 1 | POLY SI TFT//POLY SI//METAL INDUCED LATERAL CRYSTALLIZATION MILC | 2569 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | POLY SI TFT | authKW | 729676 | 3% | 69% | 89 |
2 | POLY SI | authKW | 527273 | 4% | 39% | 115 |
3 | METAL INDUCED LATERAL CRYSTALLIZATION MILC | authKW | 467525 | 2% | 91% | 43 |
4 | POLYCRYSTALLINE SILICON | authKW | 423206 | 6% | 25% | 144 |
5 | THIN FILM TRANSISTORS | authKW | 409530 | 10% | 13% | 263 |
6 | POLYCRYSTALLINE SILICON POLY SI | authKW | 397736 | 2% | 71% | 47 |
7 | METAL INDUCED LATERAL CRYSTALLIZATION | authKW | 394918 | 1% | 92% | 36 |
8 | THIN FILM TRANSISTOR TFT | authKW | 389069 | 5% | 24% | 137 |
9 | METAL INDUCED CRYSTALLIZATION | authKW | 373622 | 2% | 60% | 52 |
10 | POLYSILICON | authKW | 292444 | 4% | 23% | 107 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 26397 | 64% | 0% | 1646 |
2 | Engineering, Electrical & Electronic | 12874 | 42% | 0% | 1077 |
3 | Materials Science, Coatings & Films | 6856 | 12% | 0% | 311 |
4 | Physics, Condensed Matter | 2461 | 18% | 0% | 459 |
5 | Materials Science, Multidisciplinary | 2189 | 23% | 0% | 587 |
6 | COMPUTER APPLICATIONS & CYBERNETICS | 743 | 1% | 0% | 13 |
7 | Electrochemistry | 365 | 4% | 0% | 98 |
8 | Nanoscience & Nanotechnology | 301 | 5% | 0% | 119 |
9 | Materials Science, Ceramics | 164 | 2% | 0% | 50 |
10 | Physics, Multidisciplinary | 59 | 4% | 0% | 104 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOINT SCI TECHNOL | 149664 | 1% | 55% | 23 |
2 | LCD PROC TECHNOL | 144867 | 1% | 76% | 16 |
3 | BASE TECHNOL | 136882 | 1% | 48% | 24 |
4 | GRP MICROELECT | 127808 | 1% | 51% | 21 |
5 | GRP MICROELECT VISUALISAT | 99751 | 1% | 44% | 19 |
6 | UP A 6076 | 86258 | 1% | 52% | 14 |
7 | MAT DEVICE PLICAT | 74043 | 0% | 69% | 9 |
8 | NEO POLY INC | 71306 | 0% | 100% | 6 |
9 | ADV DISPLAY | 63250 | 2% | 12% | 43 |
10 | ELECT ENGN COMP SCI 50 | 62539 | 0% | 53% | 10 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE ELECTRON DEVICE LETTERS | 128498 | 12% | 3% | 312 |
2 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 76080 | 12% | 2% | 312 |
3 | SOLID-STATE ELECTRONICS | 15810 | 4% | 1% | 115 |
4 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 12827 | 7% | 1% | 184 |
5 | ELECTROCHEMICAL AND SOLID STATE LETTERS | 10943 | 2% | 1% | 63 |
6 | THIN SOLID FILMS | 8834 | 6% | 0% | 166 |
7 | PROCEEDINGS OF THE SID | 6089 | 0% | 4% | 12 |
8 | JOURNAL OF DISPLAY TECHNOLOGY | 4402 | 1% | 2% | 22 |
9 | JAPANESE JOURNAL OF APPLIED PHYSICS | 4334 | 3% | 0% | 77 |
10 | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 4272 | 1% | 2% | 22 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | OROUJI, AA , KUMAR, MJ , (2006) LEAKAGE CURRENT REDUCTION TECHNIQUES IN POLY-SI TFTS FOR ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS: A COMPREHENSIVE STUDY.IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY. VOL. 6. ISSUE 2. P. 315-325 | 56 | 84% | 20 |
2 | ZHANG, M , ZHOU, W , CHEN, RS , WONG, M , KWOK, HS , (2014) CHARACTERIZATION OF DC-STRESS-INDUCED DEGRADATION IN BRIDGED-GRAIN POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 61. ISSUE 9. P. 3206 -3212 | 30 | 94% | 0 |
3 | HE, HY , ZHENG, XR , (2011) ANALYTICAL EXPRESSIONS FOR DOPED POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS IN ABOVE-THRESHOLD REGIME CONSISTENT WITH PAO-SAH MODEL CONSIDERING TRAPPED CHARGE EFFECT.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 58. ISSUE 12. P. 4324-4332 | 31 | 97% | 1 |
4 | CHANG, CP , WU, YS , (2010) EFFECT OF CF4 PLASMA ON PROPERTIES AND RELIABILITY OF METAL-INDUCED LATERAL CRYSTALLIZATION SILICON TRANSISTORS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 157. ISSUE 2. P. H192 -H195 | 31 | 97% | 3 |
5 | BYUN, CW , SON, SW , LEE, YW , JOO, SK , (2012) HIGH PERFORMANCE LOW TEMPERATURE POLYCRYSTALLINE SI THIN-FILM TRANSISTORS FABRICATED BY SILICIDE SEED-INDUCED LATERAL CRYSTALLIZATION.ELECTRONIC MATERIALS LETTERS. VOL. 8. ISSUE 3. P. 251 -258 | 33 | 80% | 2 |
6 | KIMURA, M , YOSHINO, T , HARADA, K , (2010) COMPLETE EXTRACTION OF TRAP DENSITIES IN POLY-SI THIN-FILM TRANSISTORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 57. ISSUE 12. P. 3426-3433 | 34 | 81% | 7 |
7 | YAMAUCHI, N , REIF, R , (1994) POLYCRYSTALLINE SILICON THIN-FILMS PROCESSED WITH SILICON ION-IMPLANTATION AND SUBSEQUENT SOLID-PHASE CRYSTALLIZATION - THEORY, EXPERIMENTS, AND THIN-FILM-TRANSISTOR APPLICATIONS.JOURNAL OF APPLIED PHYSICS. VOL. 75. ISSUE 7. P. 3235 -3257 | 48 | 79% | 126 |
8 | BROTHERTON, SD , (1995) POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 10. ISSUE 6. P. 721 -738 | 52 | 63% | 223 |
9 | CHOI, SH , MO, YG , KIM, HD , HAN, MK , (2012) HOT-CARRIER EFFECTS IN SHORT CHANNEL (L=1.5 MU M) P-TYPE POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 2. P. - | 27 | 96% | 0 |
10 | HARA, A , KAMO, S , SATO, T , (2014) SELF-ALIGNED FOUR-TERMINAL PLANAR METAL DOUBLE-GATE LOW-TEMPERATURE POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTORS FOR SYSTEM-ON-GLASS.IEICE TRANSACTIONS ON ELECTRONICS. VOL. E97C. ISSUE 11. P. 1048 -1054 | 33 | 75% | 0 |
Classes with closest relation at Level 1 |