Class information for:
Level 1: IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//PSEUDOMORPHIC MODFET

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
3053 2077 15.2 61%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
579 2             IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC 14235
3053 1                   IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//PSEUDOMORPHIC MODFET 2077

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES journal 66887 13% 2% 263
2 IEEE ELECTRON DEVICE LETTERS journal 63279 9% 2% 197
3 PSEUDOMORPHIC MODFET authKW 61248 0% 83% 5
4 DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTOR DG HEMT authKW 44100 0% 100% 3
5 PROCESSING APPLICATION authKW 44100 0% 100% 3
6 INALAS INGAAS HETEROSTRUCTURE authKW 36745 0% 50% 5
7 2 DEG CHARGE DENSITY authKW 29400 0% 100% 2
8 2 MODE CHANNEL authKW 29400 0% 100% 2
9 ALGAAS GAAS HEMT authKW 29400 0% 100% 2
10 GRADED INGAAS authKW 29400 0% 100% 2

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Engineering, Electrical & Electronic 18398 55% 0% 1137
2 Physics, Applied 10751 47% 0% 966
3 Physics, Condensed Matter 3593 23% 0% 481
4 Physics, Multidisciplinary 552 9% 0% 189
5 Nanoscience & Nanotechnology 305 5% 0% 105
6 Crystallography 55 2% 0% 43
7 Materials Science, Multidisciplinary 43 7% 0% 146
8 Telecommunications 25 2% 0% 33
9 COMPUTER APPLICATIONS & CYBERNETICS 19 0% 0% 2
10 Optics 13 3% 0% 54

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 SEMICOND DEVICE 27555 1% 7% 26
2 SEMICOND OPTOELECT GRP 26457 0% 60% 3
3 DIPT ELECT ELECT AUTOMAT 14700 0% 100% 1
4 DTSCIT 14700 0% 100% 1
5 ECNU SITP JOINT IMAGING INFORMAT 14700 0% 100% 1
6 EDIF ELECT TELECOMUN 14700 0% 100% 1
7 EDIL MICROELECT NANOELECT RD EXCELLENCE 14700 0% 100% 1
8 ELE ON DEVICES DEVICE TECHNOL BRANCH 14700 0% 100% 1
9 ELSYM 14700 0% 100% 1
10 ESCUELA TECN SUPER INGENIEROS TELEOMUNICAC 14700 0% 100% 1

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEEE TRANSACTIONS ON ELECTRON DEVICES 66887 13% 2% 263
2 IEEE ELECTRON DEVICE LETTERS 63279 9% 2% 197
3 SOLID-STATE ELECTRONICS 19609 6% 1% 115
4 INSTITUTE OF PHYSICS CONFERENCE SERIES 12925 4% 1% 93
5 ELECTRONICS LETTERS 12406 9% 0% 183
6 ELECTRON DEVICE LETTERS 9545 1% 5% 14
7 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 4859 4% 0% 75
8 SUPERLATTICES AND MICROSTRUCTURES 3106 2% 1% 37
9 APPLIED PHYSICS LETTERS 3087 8% 0% 157
10 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 3037 2% 1% 41

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 PSEUDOMORPHIC MODFET 61248 0% 83% 5 Search PSEUDOMORPHIC+MODFET Search PSEUDOMORPHIC+MODFET
2 DOUBLE GATE HIGH ELECTRON MOBILITY TRANSISTOR DG HEMT 44100 0% 100% 3 Search DOUBLE+GATE+HIGH+ELECTRON+MOBILITY+TRANSISTOR+DG+HEMT Search DOUBLE+GATE+HIGH+ELECTRON+MOBILITY+TRANSISTOR+DG+HEMT
3 PROCESSING APPLICATION 44100 0% 100% 3 Search PROCESSING+APPLICATION Search PROCESSING+APPLICATION
4 INALAS INGAAS HETEROSTRUCTURE 36745 0% 50% 5 Search INALAS+INGAAS+HETEROSTRUCTURE Search INALAS+INGAAS+HETEROSTRUCTURE
5 2 DEG CHARGE DENSITY 29400 0% 100% 2 Search 2+DEG+CHARGE+DENSITY Search 2+DEG+CHARGE+DENSITY
6 2 MODE CHANNEL 29400 0% 100% 2 Search 2+MODE+CHANNEL Search 2+MODE+CHANNEL
7 ALGAAS GAAS HEMT 29400 0% 100% 2 Search ALGAAS+GAAS+HEMT Search ALGAAS+GAAS+HEMT
8 GRADED INGAAS 29400 0% 100% 2 Search GRADED+INGAAS Search GRADED+INGAAS
9 INDIUM MOLE FRACTION 29400 0% 100% 2 Search INDIUM+MOLE+FRACTION Search INDIUM+MOLE+FRACTION
10 SHORT CHANNEL TUNNELING 29400 0% 100% 2 Search SHORT+CHANNEL+TUNNELING Search SHORT+CHANNEL+TUNNELING

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 DRUMMOND, TJ , MASSELINK, WT , MORKOC, H , (1986) MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS.PROCEEDINGS OF THE IEEE. VOL. 74. ISSUE 6. P. 773 -822 99 52% 72
2 KARMALKAR, S , RAMESH, G , (2000) A SIMPLE YET COMPREHENSIVE UNIFIED PHYSICAL MODEL OF THE 2-D ELECTRON GAS IN DELTA-DOPED AND UNIFORMLY DOPED HIGH ELECTRON MOBILITY TRANSISTORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 47. ISSUE 1. P. 11-23 24 83% 6
3 ALTINOZ, S , TIRAS, E , BAYRAKLI, A , CELIK, H , CANKURTARAN, M , BALKAN, N , (2000) THE EFFECTS OF SPACER THICKNESS AND TEMPERATURE ON THE TRANSPORT PROPERTIES OF MODULATION-DOPED IN0.53GA0.47AS/IN0.52AL0.48AS HETEROJUNCTIONS.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 182. ISSUE 2. P. 717-726 26 74% 2
4 SALMER, G , ZIMMERMANN, J , FAUQUEMBERGUE, R , (1988) MODELING OF MODFETS.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. VOL. 36. ISSUE 7. P. 1124-1140 48 63% 10
5 PARK, DH , BRENNAN, KF , (1990) MONTE-CARLO SIMULATION OF 0.35-MU-M GATE-LENGTH GAAS AND INGAAS HEMTS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 37. ISSUE 3. P. 618-628 39 68% 16
6 PARK, DH , BRENNAN, KF , (1989) THEORETICAL-ANALYSIS OF AN AL0.15GA0.85AS/IN0.15GA0.85AS PSEUDOMORPHIC HEMT USING AN ENSEMBLE MONTE-CARLO SIMULATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 36. ISSUE 7. P. 1254-1263 37 74% 23
7 HUGHES, B , (1992) A TEMPERATURE NOISE MODEL FOR EXTRINSIC FETS.IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES. VOL. 40. ISSUE 9. P. 1821-1832 27 87% 25
8 KIZILYALLI, IC , ARTAKI, M , SHAH, NJ , CHANDRA, A , (1993) SCALING PROPERTIES AND SHORT-CHANNEL EFFECTS IN SUBMICROMETER ALGAAS/GAAS MODFETS - A MONTE-CARLO STUDY.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 40. ISSUE 2. P. 234-249 26 84% 38
9 LEON, H , GARCIAMOLINER, F , VELASCO, VR , (1995) ELECTRON-PHONON INTERACTION AND LOW-FIELD DRIFT MOBILITY IN A POLAR SEMICONDUCTOR QUANTUM-WELL.THIN SOLID FILMS. VOL. 266. ISSUE 1. P. 38 -47 27 77% 1
10 VIJAYAKRISHNA, VJ , VAISHNAV, S , DASGUPTA, N , DASGUPTA, A , (2005) UNIFIED ANALYTICAL MODEL OF HEMTS FOR ANALOGUE AND DIGITAL APPLICATIONS.IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS. VOL. 152. ISSUE 5. P. 425-432 17 85% 4

Classes with closest relation at Level 1


Rank Class id link
1 6739 MHEMT//HEMT//PHEMT
2 21140 REAL SPACE TRANSFER//CHARGE INJECTION TRANSISTOR//HOT ELECTRON LASER
3 11353 DELTA DOPING//MULTISUBBAND ELECTRON MOBILITY//DELTA DOPED QUANTUM WELLS
4 17212 INALAS INP//CONDUCTION SUBBAND//INALAS ALASSB
5 21606 ATSUGI ELECT COMMUN S FUNCT DEVICE DEV//SINGLE VOLTAGE SUPPLY//CAPACITANCE NONLINEARITY
6 7474 DX CENTERS//DX CENTRES//PERSISTENT PHOTOEFFECTS
7 30183 DEGENERATE STATISTICS//RESISTANCE SURGE//INTRINSIC VELOCITY
8 23837 GAASP QUANTUM WELLS//III V SEMICONDUCTOR HETEROJUNCTIONS//LOW TEMP SUPERCOND
9 17203 GAAS MESFET//GATE LAG//DRAIN CURRENT TRANSIENT
10 25960 THERMOMAGNETIC EFFECT//1D STACKS OF QUANTUM DOTS//CERMIN PCPM DICE S

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