Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
5225 | 1654 | 25.2 | 79% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
899 | 2 | SURFACE SCIENCE//SILICON//SCANNING TUNNELING MICROSCOPY | 11316 |
5225 | 1 | SI100 SURFACE//SURFACE SCIENCE//SURFACTANT MEDIATED EPITAXY | 1654 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SI100 SURFACE | authKW | 97770 | 1% | 38% | 14 |
2 | SURFACE SCIENCE | journal | 85029 | 21% | 1% | 352 |
3 | SURFACTANT MEDIATED EPITAXY | authKW | 82225 | 0% | 64% | 7 |
4 | BI NANOLINES | authKW | 73839 | 0% | 100% | 4 |
5 | SILICON | authKW | 58628 | 14% | 1% | 239 |
6 | C4X2 | authKW | 55379 | 0% | 100% | 3 |
7 | P2 X 2 | authKW | 55379 | 0% | 100% | 3 |
8 | TIME RESOLVING SIMULATION | authKW | 55379 | 0% | 100% | 3 |
9 | SURFACE RELAXATION AND RECONSTRUCTION | authKW | 45759 | 3% | 5% | 46 |
10 | SCANNING TUNNELING MICROSCOPY | authKW | 44871 | 6% | 2% | 105 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 23627 | 62% | 0% | 1024 |
2 | Chemistry, Physical | 2927 | 30% | 0% | 489 |
3 | Materials Science, Coatings & Films | 2271 | 9% | 0% | 146 |
4 | Physics, Applied | 1997 | 24% | 0% | 402 |
5 | Physics, Multidisciplinary | 1141 | 13% | 0% | 223 |
6 | Microscopy | 253 | 1% | 0% | 24 |
7 | Nanoscience & Nanotechnology | 109 | 4% | 0% | 62 |
8 | Materials Science, Multidisciplinary | 46 | 7% | 0% | 124 |
9 | Crystallography | 23 | 2% | 0% | 28 |
10 | Physics, Atomic, Molecular & Chemical | 3 | 2% | 0% | 33 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | TAKAYANAGI PARTICLE SUR E PROJECT | 34968 | 0% | 32% | 6 |
2 | NCCR MANEP | 27687 | 0% | 50% | 3 |
3 | CIENCIAS MAT CONDENSADA | 19813 | 1% | 5% | 22 |
4 | ASIT TSUKUBA CENT 2 | 18460 | 0% | 100% | 1 |
5 | BEIJING CONDENSED MATTRE PHYS | 18460 | 0% | 100% | 1 |
6 | CRYSTALLINE MAT SCI NUCL ENGN | 18460 | 0% | 100% | 1 |
7 | FIS LLICATA | 18460 | 0% | 100% | 1 |
8 | GRP FSICA MAT CONDENSADA | 18460 | 0% | 100% | 1 |
9 | INGN QUIMICA | 18460 | 0% | 100% | 1 |
10 | INSAFOTON | 18460 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SURFACE SCIENCE | 85029 | 21% | 1% | 352 |
2 | PHYSICAL REVIEW B | 19552 | 25% | 0% | 420 |
3 | SURFACE REVIEW AND LETTERS | 3683 | 1% | 1% | 23 |
4 | PHYSICAL REVIEW LETTERS | 3241 | 8% | 0% | 132 |
5 | APPLIED SURFACE SCIENCE | 2700 | 4% | 0% | 73 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2343 | 3% | 0% | 43 |
7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1889 | 3% | 0% | 42 |
8 | JOURNAL OF PHYSICS-CONDENSED MATTER | 597 | 2% | 0% | 33 |
9 | SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS | 594 | 0% | 3% | 1 |
10 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 522 | 1% | 0% | 19 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SI100 SURFACE | 97770 | 1% | 38% | 14 | Search SI100+SURFACE | Search SI100+SURFACE |
2 | SURFACTANT MEDIATED EPITAXY | 82225 | 0% | 64% | 7 | Search SURFACTANT+MEDIATED+EPITAXY | Search SURFACTANT+MEDIATED+EPITAXY |
3 | BI NANOLINES | 73839 | 0% | 100% | 4 | Search BI+NANOLINES | Search BI+NANOLINES |
4 | SILICON | 58628 | 14% | 1% | 239 | Search SILICON | Search SILICON |
5 | C4X2 | 55379 | 0% | 100% | 3 | Search C4X2 | Search C4X2 |
6 | P2 X 2 | 55379 | 0% | 100% | 3 | Search P2+X+2 | Search P2+X+2 |
7 | TIME RESOLVING SIMULATION | 55379 | 0% | 100% | 3 | Search TIME+RESOLVING+SIMULATION | Search TIME+RESOLVING+SIMULATION |
8 | SURFACE RELAXATION AND RECONSTRUCTION | 45759 | 3% | 5% | 46 | Search SURFACE+RELAXATION+AND+RECONSTRUCTION | Search SURFACE+RELAXATION+AND+RECONSTRUCTION |
9 | SCANNING TUNNELING MICROSCOPY | 44871 | 6% | 2% | 105 | Search SCANNING+TUNNELING+MICROSCOPY | Search SCANNING+TUNNELING+MICROSCOPY |
10 | SI001 | 44061 | 1% | 14% | 17 | Search SI001 | Search SI001 |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | AFANASIEVA, T , (2016) ADSORPTION AND DYNAMICS OF GROUP IV, V ATOMS AND MOLECULAR OXYGEN ON SEMICONDUCTOR GROUP IV (001) SURFACES.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 28. ISSUE 31. P. - | 72 | 62% | 0 |
2 | KANDEL, D , KAXIRAS, E , (2000) THE SURFACTANT EFFECT IN SEMICONDUCTOR THIN-FILM GROWTH.SOLID STATE PHYSICS: ADVANCES IN RESEARCH AND APPLICATIONS, VOL. 54. VOL. 54. ISSUE . P. 219 -262 | 83 | 51% | 50 |
3 | NARIKIYO, O , MATSUFUJI, K , KAWAI, H , (2007) STRUCTURAL PHASE TRANSITION BETWEEN C(4 X 2) AND P(2 X 2) STRUCTURES ON SI(001) SURFACE UNDER OBSERVATION BY SCANNING TUNNELING MICROSCOPY.JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. VOL. 76. ISSUE 3. P. - | 37 | 97% | 1 |
4 | UDA, T , SHIGEKAWA, H , SUGAWARA, Y , MIZUNO, S , TOCHIHARA, H , YAMASHITA, Y , YOSHINOBU, J , NAKATSUJI, K , KAWAI, H , KOMORI, F , (2004) GROUND STATE OF THE SI(001) SURFACE REVISITED - IS SEEING BELIEVING?.PROGRESS IN SURFACE SCIENCE. VOL. 76. ISSUE 6-8. P. 147 -162 | 37 | 97% | 33 |
5 | DUBOIS, M , PERDIGAO, L , DELERUE, C , ALLAN, G , GRANDIDIER, B , DERESMES, D , STIEVENARD, D , (2005) SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF RECONSTRUCTED SI(100) SURFACES.PHYSICAL REVIEW B. VOL. 71. ISSUE 16. P. - | 39 | 80% | 29 |
6 | HUANG, Y , CHEN, XS , ZHU, XY , DUAN, H , ZHOU, XH , LU, W , (2007) THEORETICAL STUDIES ABOUT ADSORPTION ON SILICON SURFACE.INTERNATIONAL JOURNAL OF MODERN PHYSICS B. VOL. 21. ISSUE 15. P. 2577-2614 | 52 | 52% | 0 |
7 | JURE, L , MAGAUD, L , GOMEZ-RODRIGUEZ, JM , MALLET, P , VEUILLEN, JY , (2000) DYNAMICS OF PB DEPOSITS ON THE SI(100)2X1 SURFACE AT ROOM TEMPERATURE.PHYSICAL REVIEW B. VOL. 61. ISSUE 24. P. 16902 -16910 | 34 | 94% | 22 |
8 | YOSHIDA, S , KIMURA, T , TAKEUCHI, O , HATA, K , OIGAWA, H , NAGAMURA, T , SAKAMA, H , SHIGEKAWA, H , (2004) PROBE EFFECT IN SCANNING TUNNELING MICROSCOPY ON SI(001) LOW-TEMPERATURE PHASES.PHYSICAL REVIEW B. VOL. 70. ISSUE 23. P. - | 34 | 79% | 27 |
9 | BANERJEE, S , MCGILP, JF , PATTERSON, CH , (2015) REFLECTANCE ANISOTROPY SPECTROSCOPY OF CLEAN AND SB COVERED GE(001) SURFACES AND COMPARISON WITH CLEAN SI(001) SURFACES.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 252. ISSUE 1. P. 78 -86 | 37 | 55% | 0 |
10 | WANG, JZ , JIA, JF , LIU, X , CHEN, WD , XUE, QK , (2002) ORDERED GA WIRES FORMED ON SI(100)-2XN: SCANNING TUNNELING MICROSCOPY STUDY.PHYSICAL REVIEW B. VOL. 65. ISSUE 23. P. - | 29 | 94% | 24 |
Classes with closest relation at Level 1 |