Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 37485 | 56 | 8.3 | 26% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 270 | 3 | IEEE TRANSACTIONS ON PLASMA SCIENCE//DIELECTRIC BARRIER DISCHARGE//PLASMA CHEMISTRY AND PLASMA PROCESSING | 43994 |
| 2975 | 2 | PULSE TRANSFORMER//MARX GENERATOR//PULSED POWER | 2627 |
| 37485 | 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR//SEMICONDUCTORS//AMIRKHANOV PHYS | 56 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | journal | 113304 | 61% | 1% | 34 |
| 2 | SEMICONDUCTORS | journal | 13706 | 23% | 0% | 13 |
| 3 | AMIRKHANOV PHYS | address | 12319 | 4% | 1% | 2 |
| 4 | DAGESTAN SCI | address | 6791 | 5% | 0% | 3 |
| 5 | DOKLADY AKADEMII NAUK BELARUSI | journal | 4746 | 9% | 0% | 5 |
| 6 | PHYSICS, CONDENSED MATTER | WoSSC | 1637 | 88% | 0% | 49 |
| 7 | PHYS ENGN PHYS | address | 279 | 2% | 0% | 1 |
| 8 | UKRAINSKII FIZICHESKII ZHURNAL | journal | 164 | 2% | 0% | 1 |
| 9 | MULTIDISCIPLINARY SCIENCES | WoSSC | 150 | 9% | 0% | 5 |
| 10 | PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | journal | 107 | 2% | 0% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 1637 | 88% | 0% | 49 |
| 2 | Multidisciplinary Sciences | 150 | 9% | 0% | 5 |
| 3 | Physics, Applied | 1 | 5% | 0% | 3 |
| 4 | Physics, Multidisciplinary | -0 | 2% | 0% | 1 |
| 5 | Engineering, Electrical & Electronic | -0 | 2% | 0% | 1 |
| 6 | Materials Science, Multidisciplinary | -1 | 2% | 0% | 1 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | AMIRKHANOV PHYS | 12319 | 4% | 1% | 2 |
| 2 | DAGESTAN SCI | 6791 | 5% | 0% | 3 |
| 3 | PHYS ENGN PHYS | 279 | 2% | 0% | 1 |
| 4 | PHYS | -0 | 2% | 0% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 113304 | 61% | 1% | 34 |
| 2 | SEMICONDUCTORS | 13706 | 23% | 0% | 13 |
| 3 | DOKLADY AKADEMII NAUK BELARUSI | 4746 | 9% | 0% | 5 |
| 4 | UKRAINSKII FIZICHESKII ZHURNAL | 164 | 2% | 0% | 1 |
| 5 | PISMA V ZHURNAL TEKHNICHESKOI FIZIKI | 107 | 2% | 0% | 1 |
| 6 | SOLID-STATE ELECTRONICS | 54 | 2% | 0% | 1 |
| 7 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 25 | 2% | 0% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | KORSHUNOV, FP , LASTOVSKII, SB , MARCHENKO, IG , (1994) CHARACTERISTICS OF ELECTRON-BOMBARDED P-N-JUNCTIONS IN THE AVALANCHE-BREAKDOWN REGION.SEMICONDUCTORS. VOL. 28. ISSUE 3. P. 292-294 | 8 | 100% | 0 |
| 2 | MUSAEV, AM , (2016) IMPACT IONIZATION IN NONUNIFORMLY HEATED SILICON P (+)-N-N (+) AND N (+)-P-P (+) STRUCTURES.SEMICONDUCTORS. VOL. 50. ISSUE 4. P. 462 -465 | 3 | 100% | 0 |
| 3 | BORBLIK, VL , GRIBNIKOV, ZS , (1996) CONCENTRATION GRATINGS IN AN ELECTRON-HOLE PLASMA DURING ITS DRIFT IN AN ALTERNATING ELECTRIC FIELD.SEMICONDUCTORS. VOL. 30. ISSUE 5. P. 425-430 | 4 | 100% | 0 |
| 4 | BULYARSKII, SV , SEREZHKIN, YN , IONYCHEV, VK , (1999) DETERMINATION OF THE PARAMETERS OF DEEP LEVELS FROM THE RELAXATIONAL DELAY OF BREAKDOWN OF A P-N JUNCTION.SEMICONDUCTORS. VOL. 33. ISSUE 4. P. 473-476 | 3 | 100% | 0 |
| 5 | KYUREGYAN, AS , SHLYGIN, PN , (1989) TEMPERATURE-DEPENDENCE OF THE AVALANCHE BREAKDOWN VOLTAGE OF P-N-JUNCTIONS WITH DEEP LEVELS - RELAXATION DELAY OF BREAKDOWN.SOVIET PHYSICS SEMICONDUCTORS-USSR. VOL. 23. ISSUE 7. P. 729-734 | 6 | 75% | 3 |
| 6 | DOBROVOLSKII, VN , PALTSEV, IE , ROMANOV, AV , (1997) TRANSITORY SWITCHING-ON OF MICROPLASMAS AT SUBTHRESHOLD VOLTAGES.SEMICONDUCTORS. VOL. 31. ISSUE 4. P. 431-432 | 3 | 100% | 1 |
| 7 | BORBLIK, VL , (1997) DRIFT-INDUCED PRODUCTION OF CONCENTRATION GRATINGS IN AN ELECTRON-HOLE PLASMA IN A HIGH-FREQUENCY ELECTRIC FIELD.SEMICONDUCTORS. VOL. 31. ISSUE 6. P. 585-589 | 4 | 57% | 0 |
| 8 | MUSAEV, AM , (2016) MECHANISM OF MICROPLASMA TURN-OFF UPON THE AVALANCHE BREAKDOWN OF SILICON P-N STRUCTURES.SEMICONDUCTORS. VOL. 50. ISSUE 10. P. 1352 -1355 | 2 | 67% | 0 |
| 9 | VYZHIGIN, YV , GRESSEROV, BN , SOBOLEV, NA , (1988) INVESTIGATION OF THE INFLUENCE OF DEEP LEVELS ON MICROPLASMA BREAKDOWN OF P-N-JUNCTIONS.SOVIET PHYSICS SEMICONDUCTORS-USSR. VOL. 22. ISSUE 3. P. 330-332 | 3 | 100% | 3 |
| 10 | DOBROVOLSKII, VN , SYRYKH, AD , (1996) CURRENTS OF INDIVIDUAL AVALANCHES IN THE SPACE-CHARGE REGION OF A P-N JUNCTION.SEMICONDUCTORS. VOL. 30. ISSUE 8. P. 734-736 | 2 | 100% | 1 |
Classes with closest relation at Level 1 |