Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
11862 | 948 | 21.2 | 53% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
637 | 3 | SCULPTURED THIN FILMS//MUELLER MATRIX//GLANCING ANGLE DEPOSITION | 12611 |
1771 | 2 | LASER INDUCED DAMAGE//ELLIPSOMETRY//APPLIED OPTICS | 6386 |
11862 | 1 | NANOOPT PROPERTY//SPECTROSCOPIC ELLIPSOMETRY//DIELECTRIC FUNCTION | 948 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | NANOOPT PROPERTY | address | 596237 | 4% | 49% | 38 |
2 | SPECTROSCOPIC ELLIPSOMETRY | authKW | 143723 | 7% | 6% | 69 |
3 | DIELECTRIC FUNCTION | authKW | 116268 | 5% | 7% | 50 |
4 | ELLIPSOMETRY | authKW | 102222 | 9% | 4% | 88 |
5 | DIELECTRIC FUNCTION PARAMETRIC MODEL | authKW | 96626 | 0% | 100% | 3 |
6 | CDMGTE | authKW | 72468 | 0% | 75% | 3 |
7 | CDP BAGNEUX | address | 64418 | 0% | 100% | 2 |
8 | CRITICAL DOSE RATE | authKW | 64418 | 0% | 100% | 2 |
9 | JOINT CHAIR EXPT PHYS | address | 64418 | 0% | 100% | 2 |
10 | NANO OPT PROPERTY | address | 57509 | 1% | 36% | 5 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 6658 | 54% | 0% | 508 |
2 | Materials Science, Coatings & Films | 4533 | 16% | 0% | 152 |
3 | Physics, Condensed Matter | 3454 | 32% | 0% | 308 |
4 | Materials Science, Multidisciplinary | 749 | 22% | 0% | 210 |
5 | Physics, Multidisciplinary | 296 | 10% | 0% | 92 |
6 | Optics | 258 | 8% | 0% | 78 |
7 | Nuclear Science & Technology | 116 | 4% | 0% | 38 |
8 | Engineering, Electrical & Electronic | 103 | 9% | 0% | 83 |
9 | Instruments & Instrumentation | 55 | 3% | 0% | 31 |
10 | Electrochemistry | 32 | 2% | 0% | 21 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NANOOPT PROPERTY | 596237 | 4% | 49% | 38 |
2 | CDP BAGNEUX | 64418 | 0% | 100% | 2 |
3 | JOINT CHAIR EXPT PHYS | 64418 | 0% | 100% | 2 |
4 | NANO OPT PROPERTY | 57509 | 1% | 36% | 5 |
5 | ADV DISPLAY RS | 32209 | 0% | 100% | 1 |
6 | ANAL SHOWA KU | 32209 | 0% | 100% | 1 |
7 | CARCH PL SCI | 32209 | 0% | 100% | 1 |
8 | CINMAT 13N | 32209 | 0% | 100% | 1 |
9 | EK ZAVOISKY KAZAN PHYS TECHNOL | 32209 | 0% | 100% | 1 |
10 | IMAGE DEVICE | 32209 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF APPLIED PHYSICS | 8076 | 17% | 0% | 164 |
2 | THIN SOLID FILMS | 7776 | 10% | 0% | 94 |
3 | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 3979 | 5% | 0% | 44 |
4 | APPLIED PHYSICS LETTERS | 775 | 6% | 0% | 54 |
5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 773 | 3% | 0% | 28 |
6 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 671 | 2% | 0% | 21 |
7 | APPLIED SURFACE SCIENCE | 626 | 3% | 0% | 27 |
8 | ACTA ELECTRONICA | 584 | 0% | 2% | 1 |
9 | SURFACE AND INTERFACE ANALYSIS | 564 | 1% | 0% | 11 |
10 | JOURNAL OF ELECTRONIC MATERIALS | 538 | 1% | 0% | 13 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | DJURISIC, AB , CHAN, Y , LI, EH , (2002) PROGRESS IN THE ROOM-TEMPERATURE OPTICAL FUNCTIONS OF SEMICONDUCTORS.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 38. ISSUE 6. P. 237 -293 | 72 | 33% | 66 |
2 | SUNDARI, ST , (2002) DISORDER EFFECTS ON DIELECTRIC RESPONSE OF SI IRRADIATED WITH AR+.JOURNAL OF APPLIED PHYSICS. VOL. 92. ISSUE 8. P. 4367-4374 | 31 | 82% | 4 |
3 | PETRIK, P , (2014) PARAMETERIZATION OF THE DIELECTRIC FUNCTION OF SEMICONDUCTOR NANOCRYSTALS.PHYSICA B-CONDENSED MATTER. VOL. 453. ISSUE . P. 2 -7 | 25 | 63% | 3 |
4 | HIKINO, S , ADACHI, S , (2004) STRUCTURAL CHANGES IN ION-IMPLANTED AND RAPID THERMALLY ANNEALED SI(100) WAFERS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 37. ISSUE 12. P. 1617-1623 | 23 | 74% | 4 |
5 | JUNG, YW , KIM, TJ , YOON, JJ , KIM, YD , ASPNES, DE , (2008) MODEL DIELECTRIC FUNCTIONS FOR ALXGA1-XAS ALLOYS OF ARBITRARY COMPOSITIONS.JOURNAL OF APPLIED PHYSICS. VOL. 104. ISSUE 1. P. - | 16 | 94% | 8 |
6 | TSUNODA, K , ADACHI, S , TAKAHASHI, M , (2002) SPECTROSCOPIC ELLIPSOMETRY STUDY OF ION-IMPLANTED SI(100) WAFERS.JOURNAL OF APPLIED PHYSICS. VOL. 91. ISSUE 5. P. 2936-2941 | 20 | 83% | 26 |
7 | KURIHARA, K , HIKINO, S , ADACHI, S , (2004) OPTICAL PROPERTIES OF N+ ION-IMPLANTED AND RAPID THERMALLY ANNEALED SI(100) WAFERS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY.JOURNAL OF APPLIED PHYSICS. VOL. 96. ISSUE 6. P. 3247-3254 | 22 | 73% | 7 |
8 | PETRIK, P , (2008) ELLIPSOMETRIC MODELS FOR VERTICALLY INHOMOGENEOUS COMPOSITE STRUCTURES.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 205. ISSUE 4. P. 732-738 | 28 | 51% | 5 |
9 | ADACHI, S , MORI, H , TAKAHASHI, M , (2003) MODEL-DIELECTRIC-FUNCTION ANALYSIS OF ION-IMPLANTED SI(100) WAFERS.JOURNAL OF APPLIED PHYSICS. VOL. 93. ISSUE 1. P. 115 -120 | 20 | 80% | 12 |
10 | YOSHIDA, K , ADACHI, S , (2005) RAPID THERMAL ANNEALING CHARACTERISTICS OF P+-ION-IMPLANTED SI(100) WAFERS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 44. ISSUE 2. P. 802 -807 | 19 | 79% | 0 |
Classes with closest relation at Level 1 |