Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 35841 | 91 | 15.7 | 49% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
| 3149 | 2 | CLEANROOM//PHOTORESIST REMOVAL//MINIENVIRONMENT | 2235 |
| 35841 | 1 | QAS//2 CHLORO 1 1 2 TRIFLUOROETHYL METHYL ETHER//ANHYDROUS FLUORINE GAS | 91 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | QAS | address | 671113 | 2% | 100% | 2 |
| 2 | 2 CHLORO 1 1 2 TRIFLUOROETHYL METHYL ETHER | authKW | 335557 | 1% | 100% | 1 |
| 3 | ANHYDROUS FLUORINE GAS | authKW | 335557 | 1% | 100% | 1 |
| 4 | ATMOSPHERIC PRESSURE BARRIER GLOW DISCHARGE | authKW | 335557 | 1% | 100% | 1 |
| 5 | CEVE | authKW | 335557 | 1% | 100% | 1 |
| 6 | CEVE STM PATTERNING | authKW | 335557 | 1% | 100% | 1 |
| 7 | CHEMICALLY ENHANCED VAPOR ETCHING | authKW | 335557 | 1% | 100% | 1 |
| 8 | COBALT CONTAMINATION | authKW | 335557 | 1% | 100% | 1 |
| 9 | CTM PHYS | address | 335557 | 1% | 100% | 1 |
| 10 | CUSTOM IC TECHNOL | address | 335557 | 1% | 100% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Materials Science, Coatings & Films | 1312 | 27% | 0% | 25 |
| 2 | Physics, Applied | 487 | 47% | 0% | 43 |
| 3 | Electrochemistry | 285 | 15% | 0% | 14 |
| 4 | Nanoscience & Nanotechnology | 147 | 14% | 0% | 13 |
| 5 | Engineering, Electrical & Electronic | 135 | 24% | 0% | 22 |
| 6 | Physics, Condensed Matter | 110 | 20% | 0% | 18 |
| 7 | Instruments & Instrumentation | 20 | 5% | 0% | 5 |
| 8 | Physics, Multidisciplinary | 16 | 8% | 0% | 7 |
| 9 | Materials Science, Multidisciplinary | 10 | 11% | 0% | 10 |
| 10 | Chemistry, Physical | 9 | 10% | 0% | 9 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | QAS | 671113 | 2% | 100% | 2 |
| 2 | CTM PHYS | 335557 | 1% | 100% | 1 |
| 3 | CUSTOM IC TECHNOL | 335557 | 1% | 100% | 1 |
| 4 | DEN SERV GENIE CHIM SYST SGCS | 335557 | 1% | 100% | 1 |
| 5 | IMSYS | 335557 | 1% | 100% | 1 |
| 6 | KILBY ANAL | 335557 | 1% | 100% | 1 |
| 7 | KILBY ANALYT S | 335557 | 1% | 100% | 1 |
| 8 | M5 PHYS | 335557 | 1% | 100% | 1 |
| 9 | PHYS M5 | 335557 | 1% | 100% | 1 |
| 10 | POWER ELECT DEVICES TORY | 335557 | 1% | 100% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOLID STATE TECHNOLOGY | 4525 | 5% | 0% | 5 |
| 2 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2190 | 15% | 0% | 14 |
| 3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1133 | 2% | 0% | 2 |
| 4 | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 1058 | 8% | 0% | 7 |
| 5 | SOLID STATE PHENOMENA | 607 | 2% | 0% | 2 |
| 6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 587 | 5% | 0% | 5 |
| 7 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 498 | 5% | 0% | 5 |
| 8 | SURFACE AND INTERFACE ANALYSIS | 448 | 3% | 0% | 3 |
| 9 | MICROELECTRONICS RELIABILITY | 432 | 3% | 0% | 3 |
| 10 | CHEMICAL & ENGINEERING NEWS | 334 | 2% | 0% | 2 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | HONG, XY , LU, JP , DUAN, SQ , CHEN, QD , WANG, PQ , (1999) STUDIES ON THE INTERFACIAL ETCHING REACTION OF DEVELOPMENT-FREE VAPOR PHOTOLITHOGRAPHY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 17. ISSUE 5. P. 2090-2096 | 8 | 80% | 1 |
| 2 | LEE, CS , BAEK, JT , YOO, HJ , WOO, SI , (1996) MODELING AND CHARACTERIZATION OF GAS-PHASE ETCHING OF THERMAL OXIDE AND TEOS OXIDE USING ANHYDROUS HF AND CH3OH.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 143. ISSUE 3. P. 1099-1103 | 7 | 88% | 19 |
| 3 | RITALA, H , KIIHAMAKI, J , PUUKILAINEN, E , (2011) CORRELATION BETWEEN FILM PROPERTIES AND ANHYDROUS HF VAPOR ETCHING BEHAVIOR OF SILICON OXIDE DEPOSITED BY CVD METHODS.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 158. ISSUE 6. P. D399 -D402 | 7 | 54% | 3 |
| 4 | RAVANEL, X , TROUILLER, C , JUHEL, M , WYON, C , KWAKMAN, LFT , LEONARD, D , (2008) QUANTITATIVE STATIC TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMETRY ANALYSIS OF ANIONIC MINORITY SPECIES IN MICROELECTRONIC SUBSTRATES.APPLIED SURFACE SCIENCE. VOL. 255. ISSUE 4. P. 1415-1418 | 4 | 100% | 1 |
| 5 | FERLITO, EP , ALNABULSI, S , MELLO, D , (2011) A DIFFERENT APPROACH IN SAMPLE PREPARATION METHOD FOR METALLIC CONTAMINATION STUDY BY TOF-SIMS AND TXRF.APPLIED SURFACE SCIENCE. VOL. 257. ISSUE 23. P. 9925 -9930 | 5 | 63% | 1 |
| 6 | MELLO, D , RICCIARI, R , AIELLO, M , ASTUTO, M , (2010) CASE STUDY: FAILURE ANALYSIS FOR METAL CORROSION INDUCED BY PRESSURE POT TEST.MICROELECTRONICS RELIABILITY. VOL. 50. ISSUE 9-11. P. 1436-1440 | 3 | 100% | 0 |
| 7 | HONG, XY , DUAN, SQ , LU, JP , WANG, PQ , (1998) STUDIES ON THE REACTION OF VAPOR OF WITH SILICON DIOXIDE UNDER POLYMER FILM.ACTA POLYMERICA SINICA. VOL. . ISSUE 2. P. 219-226 | 4 | 100% | 0 |
| 8 | BORGARD, JM , HERBELET, F , GWINNER, B , (2016) RECYCLING HYDROFLUORIC ACID IN THE NUCLEAR INDUSTRY: THE OVERAZEOTREOPIC FLASH PROCESS (OVAF).JOURNAL OF FLUORINE CHEMISTRY. VOL. 185. ISSUE . P. 17 -23 | 3 | 75% | 0 |
| 9 | WATANABE, H , KITAJIMA, H , HONMA, I , ONA, H , WILHELM, RJ , SOPHIE, AJL , (1995) INFLUENCE OF WATER ADSORPTION/DESORPTION PROCESSES ON THE SELECTIVITY OF VAPOR HF ETCHING.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 142. ISSUE 4. P. 1332-1340 | 4 | 100% | 12 |
| 10 | MONTANO-MIRANDA, G , MUSCAT, AJ , (2003) GAS-PHASE HF/VAPOR ETCHING OF THERMAL SILICON DIOXIDE FILMS.ULTRA CLEAN PROCESSING OF SILICON SURFACES V. VOL. 92. ISSUE . P. 207-210 | 3 | 100% | 3 |
Classes with closest relation at Level 1 |