Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
11950 | 943 | 20.5 | 57% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
376 | 3 | SENSORS AND ACTUATORS A-PHYSICAL//JOURNAL OF MICROELECTROMECHANICAL SYSTEMS//MEMS | 32422 |
308 | 2 | JOURNAL OF MICROELECTROMECHANICAL SYSTEMS//MEMS//JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 18480 |
11950 | 1 | ANISOTROPIC ETCHING//MICRONANOSYST ENGN//MEMS MICRO NANO SYST | 943 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ANISOTROPIC ETCHING | authKW | 1056275 | 9% | 38% | 87 |
2 | MICRONANOSYST ENGN | address | 333044 | 1% | 86% | 12 |
3 | MEMS MICRO NANO SYST | address | 269826 | 1% | 83% | 10 |
4 | TMAH | authKW | 260900 | 4% | 23% | 35 |
5 | ELECTROCHEMICAL ETCH STOP | authKW | 218558 | 1% | 75% | 9 |
6 | SILICON ANISOTROPIC ETCHING | authKW | 218558 | 1% | 75% | 9 |
7 | MICRO NANOSYST ENGN | address | 188386 | 1% | 73% | 8 |
8 | ETCHING SIMULATION | authKW | 166522 | 1% | 86% | 6 |
9 | CONVEX CORNER | authKW | 158656 | 1% | 70% | 7 |
10 | CORNER COMPENSATION | authKW | 134913 | 1% | 83% | 5 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Instruments & Instrumentation | 18151 | 43% | 0% | 409 |
2 | Engineering, Electrical & Electronic | 7190 | 51% | 0% | 481 |
3 | Nanoscience & Nanotechnology | 5752 | 27% | 0% | 252 |
4 | Physics, Applied | 3113 | 38% | 0% | 357 |
5 | Materials Science, Coatings & Films | 1907 | 11% | 0% | 100 |
6 | Electrochemistry | 1747 | 12% | 0% | 113 |
7 | Materials Science, Multidisciplinary | 1625 | 31% | 0% | 290 |
8 | Mechanics | 1263 | 13% | 0% | 127 |
9 | Engineering, Mechanical | 76 | 4% | 0% | 36 |
10 | Physics, Condensed Matter | 55 | 6% | 0% | 59 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MICRONANOSYST ENGN | 333044 | 1% | 86% | 12 |
2 | MEMS MICRO NANO SYST | 269826 | 1% | 83% | 10 |
3 | MICRO NANOSYST ENGN | 188386 | 1% | 73% | 8 |
4 | MICRONANO MED DEVICES | 103613 | 0% | 80% | 4 |
5 | RIM SOLID STATE CHEM | 67533 | 1% | 19% | 11 |
6 | INTRUMENTAC IMAGEN MOL | 64759 | 0% | 100% | 2 |
7 | JIANGING SECT | 64759 | 0% | 100% | 2 |
8 | MEMS MICRONANO SYST | 64759 | 0% | 100% | 2 |
9 | YONSEI MICROSYST | 64759 | 0% | 100% | 2 |
10 | INTEGRAT SENSORS ACTUATORS | 64755 | 0% | 50% | 4 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SENSORS AND ACTUATORS A-PHYSICAL | 94389 | 18% | 2% | 170 |
2 | JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 91526 | 13% | 2% | 125 |
3 | SENSORS AND MATERIALS | 35313 | 4% | 3% | 34 |
4 | JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 10863 | 3% | 1% | 30 |
5 | MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS | 6015 | 3% | 1% | 25 |
6 | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 5832 | 8% | 0% | 74 |
7 | SENSORS AND ACTUATORS | 2386 | 1% | 1% | 7 |
8 | CANADIAN JOURNAL OF ELECTRICAL AND COMPUTER ENGINEERING-REVUE CANADIENNE DE GENIE ELECTRIQUE ET INFORMATIQUE | 1606 | 1% | 1% | 5 |
9 | MICROELECTRONICS JOURNAL | 1196 | 1% | 0% | 12 |
10 | MICRO & NANO LETTERS | 977 | 1% | 0% | 7 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ANISOTROPIC ETCHING | 1056275 | 9% | 38% | 87 | Search ANISOTROPIC+ETCHING | Search ANISOTROPIC+ETCHING |
2 | TMAH | 260900 | 4% | 23% | 35 | Search TMAH | Search TMAH |
3 | ELECTROCHEMICAL ETCH STOP | 218558 | 1% | 75% | 9 | Search ELECTROCHEMICAL+ETCH+STOP | Search ELECTROCHEMICAL+ETCH+STOP |
4 | SILICON ANISOTROPIC ETCHING | 218558 | 1% | 75% | 9 | Search SILICON+ANISOTROPIC+ETCHING | Search SILICON+ANISOTROPIC+ETCHING |
5 | ETCHING SIMULATION | 166522 | 1% | 86% | 6 | Search ETCHING+SIMULATION | Search ETCHING+SIMULATION |
6 | CONVEX CORNER | 158656 | 1% | 70% | 7 | Search CONVEX+CORNER | Search CONVEX+CORNER |
7 | CORNER COMPENSATION | 134913 | 1% | 83% | 5 | Search CORNER+COMPENSATION | Search CORNER+COMPENSATION |
8 | KOH | 119695 | 3% | 13% | 28 | Search KOH | Search KOH |
9 | ANISOTROPIC ETCHING OF SILICON | 115638 | 1% | 71% | 5 | Search ANISOTROPIC+ETCHING+OF+SILICON | Search ANISOTROPIC+ETCHING+OF+SILICON |
10 | ANISOTROPIC WET CHEMICAL ETCHING | 115638 | 1% | 71% | 5 | Search ANISOTROPIC+WET+CHEMICAL+ETCHING | Search ANISOTROPIC+WET+CHEMICAL+ETCHING |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | FOSTER, AS , NIEMINEN, RM , TANAKA, H , GOSALVEZ, MA , SATO, K , (2007) AN ATOMISTIC INTRODUCTION TO ANISOTROPIC ETCHING.JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 17. ISSUE 4. P. S1 -S26 | 49 | 88% | 43 |
2 | SMILJANIC, MM , RADJENOVIC, B , RADMILOVIC-RADJENOVIC, M , LAZIC, Z , JOVIC, V , (2014) SIMULATION AND EXPERIMENTAL STUDY OF MASKLESS CONVEX CORNER COMPENSATION IN TMAH WATER SOLUTION.JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 24. ISSUE 11. P. - | 40 | 95% | 1 |
3 | PAL, P , SATO, K , GOSALVEZ, MA , SHIKIDA, M , (2007) STUDY OF ROUNDED CONCAVE AND SHARP EDGE CONVEX CORNERS UNDERCUTTING IN CMOS COMPATIBLE ANISOTROPIC ETCHANTS.JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 17. ISSUE 11. P. 2299 -2307 | 39 | 100% | 16 |
4 | MINEY, PG , CUNNANE, VJ , (2004) A STUDY OF THE PASSIVATION PEAK CURRENT DENSITY FOR (100) ORIENTED SILICON IN TETRAMETHYLAMMONIUM HYDROXIDE (TMAH): EFFECT OF TEMPERATURE, CONCENTRATION AND CARRIER TYPE.ELECTROCHIMICA ACTA. VOL. 49. ISSUE 7. P. 1009 -1018 | 42 | 100% | 2 |
5 | ROLA, KP , ZUBEL, I , (2013) TRITON SURFACTANT AS AN ADDITIVE TO KOH SILICON ETCHANT.JOURNAL OF MICROELECTROMECHANICAL SYSTEMS. VOL. 22. ISSUE 6. P. 1373-1382 | 34 | 92% | 4 |
6 | PAL, P , SATO, K , SHIKIDA, M , GOSALVEZ, MA , (2009) STUDY OF CORNER COMPENSATING STRUCTURES AND FABRICATION OF VARIOUS SHAPES OF MEMS STRUCTURES IN PURE AND SURFACTANT ADDED TMAH.SENSORS AND ACTUATORS A-PHYSICAL. VOL. 154. ISSUE 2. P. 192-203 | 35 | 92% | 25 |
7 | MINEY, PG , CUNNANE, VJ , (2003) A STUDY OF THE CHEMICAL BREAKDOWN OF THE ANODIC OXIDE FORMED ON (100) ORIENTED SILICON IN TETRAMETHYLAMMONIUM HYDROXIDE (TMAH) SOLUTIONS.ELECTROCHIMICA ACTA. VOL. 48. ISSUE 11. P. 1475-1482 | 43 | 93% | 1 |
8 | PAL, P , HALDAR, S , SINGH, SS , ASHOK, A , YAN, X , SATO, K , (2014) A DETAILED INVESTIGATION AND EXPLANATION OF THE APPEARANCE OF DIFFERENT UNDERCUT PROFILES IN KOH AND TMAH.JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 24. ISSUE 9. P. - | 29 | 97% | 3 |
9 | ZHOU, ZF , HUANG, QA , LI, WH , (2009) MODELING AND SIMULATIONS OF ANISOTROPIC ETCHING OF SILICON IN ALKALINE SOLUTIONS WITH EXPERIMENTAL VERIFICATION.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 156. ISSUE 2. P. F29 -F37 | 31 | 100% | 9 |
10 | SMILJANIC, MM , JOVIC, V , LAZIC, Z , (2012) MASKLESS CONVEX CORNER COMPENSATION TECHNIQUE ON A (100) SILICON SUBSTRATE IN A 25 WT% TMAH WATER SOLUTION.JOURNAL OF MICROMECHANICS AND MICROENGINEERING. VOL. 22. ISSUE 11. P. - | 29 | 94% | 3 |
Classes with closest relation at Level 1 |