Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
26940 | 241 | 16.3 | 54% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
434 | 2 | MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//AMORPHOUS SILICON | 16320 |
26940 | 1 | SOURCE GATED TRANSISTOR SGT//SOURCE GATED TRANSISTOR//ELE OMAGNET ELECT DEVICES | 241 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SOURCE GATED TRANSISTOR SGT | authKW | 527926 | 2% | 83% | 5 |
2 | SOURCE GATED TRANSISTOR | authKW | 506811 | 2% | 100% | 4 |
3 | ELE OMAGNET ELECT DEVICES | address | 168936 | 1% | 67% | 2 |
4 | MIPLAZA | address | 142537 | 1% | 38% | 3 |
5 | GREMAN UMR 7347 | address | 137712 | 2% | 22% | 5 |
6 | A SE C GAAS | authKW | 126703 | 0% | 100% | 1 |
7 | A SE C SI | authKW | 126703 | 0% | 100% | 1 |
8 | AL A SIC C SIP AU | authKW | 126703 | 0% | 100% | 1 |
9 | ALPHA SI C SI HETEROSTRUCTURE | authKW | 126703 | 0% | 100% | 1 |
10 | AMORPHOUS CRYSTALLINE SILICON HETEROJUCTION | authKW | 126703 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 1633 | 53% | 0% | 127 |
2 | Engineering, Electrical & Electronic | 918 | 37% | 0% | 89 |
3 | Materials Science, Ceramics | 577 | 10% | 0% | 24 |
4 | Physics, Condensed Matter | 546 | 26% | 0% | 63 |
5 | Materials Science, Multidisciplinary | 295 | 27% | 0% | 64 |
6 | Materials Science, Coatings & Films | 260 | 8% | 0% | 19 |
7 | COMPUTER APPLICATIONS & CYBERNETICS | 190 | 1% | 0% | 2 |
8 | Mathematics, Interdisciplinary Applications | 12 | 2% | 0% | 5 |
9 | Physics, Multidisciplinary | 12 | 5% | 0% | 12 |
10 | Nanoscience & Nanotechnology | 7 | 3% | 0% | 7 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ELE OMAGNET ELECT DEVICES | 168936 | 1% | 67% | 2 |
2 | MIPLAZA | 142537 | 1% | 38% | 3 |
3 | GREMAN UMR 7347 | 137712 | 2% | 22% | 5 |
4 | BELMICROSISTEMS | 126703 | 0% | 100% | 1 |
5 | CONICET INTEC GUEMES 3450 | 126703 | 0% | 100% | 1 |
6 | ELECT TECHNOL MATH | 126703 | 0% | 100% | 1 |
7 | IST RIC ELETTROMAGNETISMO COMPONENTI ELECTTRON | 126703 | 0% | 100% | 1 |
8 | MIPLAZA IL | 126703 | 0% | 100% | 1 |
9 | SYST CHIP PROC | 126703 | 0% | 100% | 1 |
10 | SEPS | 126697 | 2% | 25% | 4 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID-STATE ELECTRONICS | 6793 | 10% | 0% | 23 |
2 | JOURNAL OF NON-CRYSTALLINE SOLIDS | 3183 | 10% | 0% | 24 |
3 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 2994 | 8% | 0% | 19 |
4 | NEC TECHNICAL JOURNAL | 2042 | 0% | 2% | 1 |
5 | PROCEEDINGS OF THE SID | 1806 | 1% | 1% | 2 |
6 | IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1699 | 1% | 0% | 3 |
7 | ELECTRONICS | 1296 | 1% | 1% | 2 |
8 | IEEE ELECTRON DEVICE LETTERS | 1127 | 4% | 0% | 9 |
9 | PHYSICS IN TECHNOLOGY | 1020 | 0% | 1% | 1 |
10 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1007 | 3% | 0% | 8 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SPOREA, RA , OVERY, M , SHANNON, JM , SILVA, SRP , (2015) TEMPERATURE DEPENDENCE OF THE CURRENT IN SCHOTTKY-BARRIER SOURCE-GATED TRANSISTORS.JOURNAL OF APPLIED PHYSICS. VOL. 117. ISSUE 18. P. - | 13 | 87% | 1 |
2 | NEVES, AJM , MOREIRA, HS , (2004) CONDUCTANCE QUANTIZATION IN AMORPHOUS SILICON SWITCHES.PHYSICAL REVIEW B. VOL. 70. ISSUE 19. P. - | 10 | 91% | 0 |
3 | SHANNON, JM , SPOREA, RA , GEORGAKOPOULOS, S , SHKUNOV, M , SILVA, SRP , (2013) LOW-FIELD BEHAVIOR OF SOURCE-GATED TRANSISTORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 60. ISSUE 8. P. 2444-2449 | 9 | 75% | 6 |
4 | BALON, F , SHANNON, JM , (2006) ANALYSIS OF SCHOTTKY BARRIER SOURCE-GATED TRANSISTORS IN A-SI : H.SOLID-STATE ELECTRONICS. VOL. 50. ISSUE 3. P. 378 -383 | 8 | 100% | 13 |
5 | ROSALES-QUINTERO, P , MORENO-MORENO, M , TORRES-JACOME, A , WADE, FJD , MOLINA-REYES, J , CALLEJA-ARRIAGA, W , ZUNIGA-ISLAS, C , (2011) IMPACT OF THE BASE DOPING CONCENTRATION ON THE TRANSPORT MECHANISMS IN N-TYPE A-SIGE:H/P-TYPE C-SILICON HETEROJUNCTIONS.REVISTA MEXICANA DE FISICA. VOL. 57. ISSUE 2. P. 133 -139 | 7 | 100% | 0 |
6 | JAFAR, M , HANEMAN, D , (1994) SWITCHING IN AMORPHOUS-SILICON DEVICES.PHYSICAL REVIEW B. VOL. 49. ISSUE 19. P. 13611-13615 | 11 | 92% | 29 |
7 | GATERU, RG , ORWA, JO , SHANNON, JM , (2005) POLARITY-DEPENDENT FORMING IN ION BOMBARDED AMORPHOUS SILICON MEMORY DEVICES.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 2. P. - | 8 | 89% | 1 |
8 | HU, J , SNELL, AJ , HAJTO, J , ROSE, MJ , EDMISTON, W , (2001) FIELD-INDUCED ANOMALOUS CHANGES IN CR/A-SI : H/V THIN FILM STRUCTURES.THIN SOLID FILMS. VOL. 396. ISSUE 1-2. P. 240 -249 | 10 | 77% | 3 |
9 | SHANNON, JM , BALON, F , (2009) FREQUENCY RESPONSE OF SOURCE-GATED TRANSISTORS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 56. ISSUE 10. P. 2354-2356 | 6 | 100% | 5 |
10 | DIMITRIADIS, EI , GIRGINOUDI, D , THANAILAKIS, A , GEORGOULAS, N , (1995) NEW A-SI/C-SI AND A-SIC/C-SI BASED OPTICALLY CONTROLLED SWITCHING DEVICES.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 10. ISSUE 4. P. 523-528 | 11 | 85% | 5 |
Classes with closest relation at Level 1 |