Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
14239 | 782 | 20.4 | 56% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
434 | 2 | MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//AMORPHOUS SILICON | 16320 |
14239 | 1 | SILANE PLASMA//SIH2//SIH3 | 782 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SILANE PLASMA | authKW | 126499 | 1% | 36% | 9 |
2 | SIH2 | authKW | 106284 | 1% | 39% | 7 |
3 | SIH3 | authKW | 104121 | 1% | 67% | 4 |
4 | HYDROGENATED AMORPHOUS SILICON | authKW | 68581 | 3% | 8% | 23 |
5 | ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION | authKW | 52060 | 0% | 67% | 2 |
6 | RF PLASMA CHEMICAL VAPOR DEPOSITION | authKW | 52060 | 0% | 67% | 2 |
7 | VERY HIGH FREQUENCY CAPACITIVELY COUPLED PLASMA | authKW | 52060 | 0% | 67% | 2 |
8 | DILUTION GAS | authKW | 43923 | 0% | 38% | 3 |
9 | TRANSLATIONAL TEMPERATURE | authKW | 43923 | 0% | 38% | 3 |
10 | 3S IONIZATION | authKW | 39046 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 5949 | 56% | 0% | 435 |
2 | Materials Science, Ceramics | 3337 | 13% | 0% | 103 |
3 | Materials Science, Coatings & Films | 1921 | 12% | 0% | 91 |
4 | Materials Science, Multidisciplinary | 1166 | 29% | 0% | 226 |
5 | Physics, Condensed Matter | 312 | 12% | 0% | 97 |
6 | COMPUTER APPLICATIONS & CYBERNETICS | 129 | 0% | 0% | 3 |
7 | Physics, Atomic, Molecular & Chemical | 94 | 6% | 0% | 44 |
8 | Physics, Fluids & Plasmas | 75 | 3% | 0% | 23 |
9 | Chemistry, Physical | 68 | 9% | 0% | 74 |
10 | Energy & Fuels | 66 | 4% | 0% | 30 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | CHEM ENGN YONGSAN KU | 39046 | 0% | 100% | 1 |
2 | COUCHE MINCE INTER ES | 39046 | 0% | 100% | 1 |
3 | ELECT THIN FILM | 39046 | 0% | 100% | 1 |
4 | ENGN ELECT ENGN SUMIYOSHI KU | 39046 | 0% | 100% | 1 |
5 | ESTIJOINT | 39046 | 0% | 100% | 1 |
6 | ETATS CONDENSES GRP CNRS URA 783 | 39046 | 0% | 100% | 1 |
7 | HIGH PERFORMANCE COMPUTAT DATABASES | 39046 | 0% | 100% | 1 |
8 | OFF MED DEVICES | 39046 | 0% | 100% | 1 |
9 | TECHNOL RADIOELECT DEVICES | 39046 | 0% | 100% | 1 |
10 | PRIAM | 23423 | 0% | 20% | 3 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF NON-CRYSTALLINE SOLIDS | 17088 | 13% | 0% | 100 |
2 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 3903 | 7% | 0% | 56 |
3 | JOURNAL OF APPLIED PHYSICS | 3814 | 13% | 0% | 103 |
4 | SOLAR CELLS | 3301 | 1% | 1% | 9 |
5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2498 | 1% | 1% | 6 |
6 | THIN SOLID FILMS | 2320 | 6% | 0% | 47 |
7 | HIGH TEMPERATURE MATERIAL PROCESSES | 2248 | 1% | 1% | 6 |
8 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2122 | 4% | 0% | 28 |
9 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997 | 3% | 0% | 25 |
10 | JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS | 1991 | 0% | 2% | 3 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ZHOU, J , ZHANG, JM , FISHER, ER , (2005) EFFECTS OF ARGON DILUTION ON THE TRANSLATIONAL AND ROTATIONAL TEMPERATURES OF SIH IN SILANE AND DISILANE PLASMAS.JOURNAL OF PHYSICAL CHEMISTRY A. VOL. 109. ISSUE 46. P. 10521-10526 | 26 | 87% | 4 |
2 | KALEMOS, A , MAVRIDIS, A , METROPOULOS, A , (2002) AN ACCURATE DESCRIPTION OF THE GROUND AND EXCITED STATES OF SIH.JOURNAL OF CHEMICAL PHYSICS. VOL. 116. ISSUE 15. P. 6529 -6540 | 34 | 45% | 19 |
3 | KANG, M , KOO, Y , AN, C , (1998) THE OPTIMIZATION OF THE DEPOSITION VARIABLES FOR HIGH PHOTOCONDUCTIVITY A-SI : H FILMS PREPARED BY ELECTRON CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR DEPOSITION.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 37. ISSUE 12B. P. 6959-6964 | 16 | 94% | 0 |
4 | FANTZ, U , (1998) SPECTROSCOPIC DIAGNOSTICS AND MODELLING OF SILANE MICROWAVE PLASMAS.PLASMA PHYSICS AND CONTROLLED FUSION. VOL. 40. ISSUE 6. P. 1035 -1056 | 24 | 60% | 20 |
5 | SATO, K , KOINUMA, H , (1996) HIGHLY CROSS-LINKED POLYMER NETWORKS OF AMORPHOUS SILICON ALLOYS: QUANTUM CHEMICAL STUDIES ON PLASMA AND PHOTOCHEMICAL PROCESSES.PROGRESS IN POLYMER SCIENCE. VOL. 21. ISSUE 2. P. 255-297 | 31 | 48% | 1 |
6 | KESSELS, WMM , MCCURDY, PR , WILLIAMS, KL , BARKER, GR , VENTURO, VA , FISHER, ER , (2002) SURFACE REACTIVITY AND PLASMA ENERGETICS OF SIH RADICALS DURING PLASMA DEPOSITION OF SILICON-BASED MATERIALS.JOURNAL OF PHYSICAL CHEMISTRY B. VOL. 106. ISSUE 10. P. 2680 -2689 | 22 | 54% | 14 |
7 | CAPEZZUTO, P , BRUNO, G , (1988) PLASMA DEPOSITION OF AMORPHOUS-SILICON FILMS - AN OVERVIEW ON SOME OPEN QUESTIONS.PURE AND APPLIED CHEMISTRY. VOL. 60. ISSUE 5. P. 633 -644 | 24 | 86% | 7 |
8 | HORVATH, P , GALLAGHER, A , (2009) SURFACE RADICALS IN SILANE/HYDROGEN DISCHARGES.JOURNAL OF APPLIED PHYSICS. VOL. 105. ISSUE 1. P. - | 16 | 57% | 12 |
9 | RAM, RS , ENGLEMAN, R , BERNATH, PF , (1998) FOURIER TRANSFORM EMISSION SPECTROSCOPY OF THE A(2)DELTA-CHI(2)PI TRANSITION OF SIH AND SID.JOURNAL OF MOLECULAR SPECTROSCOPY. VOL. 190. ISSUE 2. P. 341-352 | 20 | 65% | 6 |
10 | KAWASE, M , NAKAI, T , YAMAGUCHI, A , HAKOZAKI, T , HASHIMOTO, K , (1997) NUMERICAL SIMULATION OF PLASMA CHEMICAL VAPOR DEPOSITION FROM SILANE: EFFECTS OF THE PLASMA-SUBSTRATE DISTANCE AND HYDROGEN DILUTION.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 36. ISSUE 6A. P. 3396 -3407 | 21 | 60% | 7 |
Classes with closest relation at Level 1 |