Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
18384 | 554 | 20.0 | 54% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
3874 | 2 | AC SURFACE PHOTOVOLTAGE//TECH M PUPIN//SCANNING PHOTON MICROSCOPE | 868 |
18384 | 1 | AC SURFACE PHOTOVOLTAGE//SCANNING PHOTON MICROSCOPE//VIBRATING CAPACITOR | 554 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | AC SURFACE PHOTOVOLTAGE | authKW | 720191 | 3% | 93% | 14 |
2 | SCANNING PHOTON MICROSCOPE | authKW | 337589 | 1% | 88% | 7 |
3 | VIBRATING CAPACITOR | authKW | 225055 | 1% | 58% | 7 |
4 | RCA RINSE | authKW | 220467 | 1% | 100% | 4 |
5 | OXIDE CHARGE | authKW | 186276 | 2% | 26% | 13 |
6 | AC PHOTOVOLTAIC METHOD | authKW | 165350 | 1% | 100% | 3 |
7 | RCA SOLUTION | authKW | 165350 | 1% | 100% | 3 |
8 | VOLUME LIFETIME | authKW | 165350 | 1% | 100% | 3 |
9 | SURFACE PHOTOVOLTAGE | authKW | 164625 | 5% | 11% | 27 |
10 | SURFACE VOLTAGE | authKW | 152625 | 1% | 46% | 6 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 4297 | 56% | 0% | 311 |
2 | Physics, Condensed Matter | 1520 | 29% | 0% | 158 |
3 | Materials Science, Coatings & Films | 797 | 9% | 0% | 50 |
4 | Materials Science, Multidisciplinary | 562 | 25% | 0% | 136 |
5 | Engineering, Electrical & Electronic | 270 | 15% | 0% | 84 |
6 | Instruments & Instrumentation | 221 | 7% | 0% | 39 |
7 | Electrochemistry | 87 | 4% | 0% | 22 |
8 | Chemistry, Physical | 85 | 11% | 0% | 63 |
9 | Nanoscience & Nanotechnology | 61 | 5% | 0% | 25 |
10 | Physics, Multidisciplinary | 22 | 5% | 0% | 26 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | METASTABLE MAT MFG TECHNOL SCI | 110234 | 0% | 100% | 2 |
2 | ADV STUDIES SNECTAR | 55117 | 0% | 100% | 1 |
3 | ANGEW PHOTOPHY | 55117 | 0% | 100% | 1 |
4 | CARBON CPDS CONTAINING HETEROATOM | 55117 | 0% | 100% | 1 |
5 | CHRONOENVIRONNEMENT UMR CNRS 6249 | 55117 | 0% | 100% | 1 |
6 | DERMATOL OPHTHALMOL REGENERAT CU | 55117 | 0% | 100% | 1 |
7 | EUROPEAN ADV STUDIES | 55117 | 0% | 100% | 1 |
8 | GAL EL | 55117 | 0% | 100% | 1 |
9 | METASTABLE MAT MANU TURE TECHNOL | 55117 | 0% | 100% | 1 |
10 | METASTABLE MAT MANU TURE TECHNOL SCI | 55117 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 4241 | 9% | 0% | 49 |
2 | SOVIET MICROELECTRONICS | 2942 | 1% | 1% | 4 |
3 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2218 | 3% | 0% | 18 |
4 | SOLID-STATE ELECTRONICS | 2210 | 4% | 0% | 20 |
5 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1567 | 1% | 1% | 4 |
6 | REVIEW OF SCIENTIFIC INSTRUMENTS | 933 | 4% | 0% | 23 |
7 | JOURNAL OF APPLIED PHYSICS | 904 | 8% | 0% | 43 |
8 | JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS | 856 | 1% | 0% | 6 |
9 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 642 | 2% | 0% | 12 |
10 | SURFACE SCIENCE | 563 | 3% | 0% | 17 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | AC SURFACE PHOTOVOLTAGE | 720191 | 3% | 93% | 14 | Search AC+SURFACE+PHOTOVOLTAGE | Search AC+SURFACE+PHOTOVOLTAGE |
2 | SCANNING PHOTON MICROSCOPE | 337589 | 1% | 88% | 7 | Search SCANNING+PHOTON+MICROSCOPE | Search SCANNING+PHOTON+MICROSCOPE |
3 | VIBRATING CAPACITOR | 225055 | 1% | 58% | 7 | Search VIBRATING+CAPACITOR | Search VIBRATING+CAPACITOR |
4 | RCA RINSE | 220467 | 1% | 100% | 4 | Search RCA+RINSE | Search RCA+RINSE |
5 | OXIDE CHARGE | 186276 | 2% | 26% | 13 | Search OXIDE+CHARGE | Search OXIDE+CHARGE |
6 | AC PHOTOVOLTAIC METHOD | 165350 | 1% | 100% | 3 | Search AC+PHOTOVOLTAIC+METHOD | Search AC+PHOTOVOLTAIC+METHOD |
7 | RCA SOLUTION | 165350 | 1% | 100% | 3 | Search RCA+SOLUTION | Search RCA+SOLUTION |
8 | VOLUME LIFETIME | 165350 | 1% | 100% | 3 | Search VOLUME+LIFETIME | Search VOLUME+LIFETIME |
9 | SURFACE PHOTOVOLTAGE | 164625 | 5% | 11% | 27 | Search SURFACE+PHOTOVOLTAGE | Search SURFACE+PHOTOVOLTAGE |
10 | SURFACE VOLTAGE | 152625 | 1% | 46% | 6 | Search SURFACE+VOLTAGE | Search SURFACE+VOLTAGE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | KRONIK, L , SHAPIRA, Y , (1999) SURFACE PHOTOVOLTAGE PHENOMENA: THEORY, EXPERIMENT, AND APPLICATIONS.SURFACE SCIENCE REPORTS. VOL. 37. ISSUE 1-5. P. 1 -206 | 133 | 30% | 965 |
2 | SHIMIZU, H , NAGASE, S , IKEDA, M , (2011) ALTERNATING CURRENT SURFACE PHOTOVOLTAGE IN THERMALLY OXIDIZED CHROMIUM-CONTAMINATED N-TYPE SILICON WAFERS.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 104. ISSUE 3. P. 929 -934 | 26 | 93% | 0 |
3 | SHIMIZU, H , SANADA, Y , (2011) ANOMALOUS OXIDE CHARGE VARIATION IDENTIFIED BY ALTERNATING CURRENT SURFACE PHOTOVOLTAGE METHOD IN CR-AQUEOUS-SOLUTION-RINSED P-TYPE SI(001) WAFERS EXPOSED TO AIR.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 50. ISSUE 11. P. - | 20 | 95% | 1 |
4 | SHIMIZU, H , SANADA, Y , (2012) COLLAPSE OF CR(OH)3/N-SI SCHOTTKY BARRIER AND GROWTH OF ATOMIC BRIDGING-TYPE SURFACE PHOTOVOLTAGES IN CR-DEPOSITED N-TYPE SI(001) WAFERS.SURFACE AND INTERFACE ANALYSIS. VOL. 44. ISSUE 8. P. 1035-1038 | 17 | 100% | 0 |
5 | SHIMIZU, H , SANADA, Y , (2012) TRANSLATION FROM SCHOTTKY BARRIER TO ATOMIC BRIDGING-TYPE SURFACE PHOTOVOLTAGES IN CR-AQUEOUS-SOLUTION-RINSED SI(001) WAFERS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 5. P. - | 16 | 89% | 0 |
6 | SHIMIZU, H , OTSUKI, T , (2012) METAL-INDUCED NEGATIVE OXIDE CHARGE DETECTED BY AN ALTERNATING CURRENT SURFACE PHOTOVOLTAGE IN THERMALLY OXIDIZED FE-CONTAMINATED N-TYPE SI (001) WAFERS.THIN SOLID FILMS. VOL. 520. ISSUE 14. P. 4808-4811 | 14 | 100% | 1 |
7 | SHIMIZU, H , SANADA, Y , (2011) SCHOTTKY-BARRIER-INDUCED AC SURFACE PHOTOVOLTAGES IN AU-PRECIPITATED N-TYPE SI(001) SURFACES.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 50. ISSUE 8. P. - | 15 | 94% | 1 |
8 | IVANOV, T , DONCHEV, V , GERMANOVA, K , KIRILOV, K , (2009) A VECTOR MODEL FOR ANALYSING THE SURFACE PHOTOVOLTAGE AMPLITUDE AND PHASE SPECTRA APPLIED TO COMPLICATED NANOSTRUCTURES.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 42. ISSUE 13. P. - | 17 | 74% | 19 |
9 | MUNAKATA, C , SHIMIZU, H , (2000) FIXED OXIDE CHARGE IN N-TYPE SILICON WAFERS STUDIED BY AC SURFACE PHOTOVOLTAGE TECHNIQUE.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 15. ISSUE 1. P. 40-43 | 17 | 94% | 5 |
10 | SHIMIZU, H , SHIN, R , IKEDA, M , (2005) BEHAVIOR OF METAL-INDUCED NEGATIVE OXIDE CHARGES ON THE SURFACE OF N-TYPE SILICON WAFERS USING FREQUENCY-DEPENDENT AC SURFACE PHOTOVOLTAGE MEASUREMENTS.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 44. ISSUE 6A. P. 3778 -3783 | 14 | 93% | 12 |
Classes with closest relation at Level 1 |