Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
17551 | 593 | 12.7 | 61% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
579 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC | 14235 |
17551 | 1 | BACKWARD DIODES//OPTOELECTRONIC SWITCH//MILLIMETER WAVE DETECTORS | 593 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | BACKWARD DIODES | authKW | 308951 | 1% | 100% | 6 |
2 | OPTOELECTRONIC SWITCH | authKW | 274618 | 1% | 67% | 8 |
3 | MILLIMETER WAVE DETECTORS | authKW | 271000 | 2% | 53% | 10 |
4 | OPTOELECTRONIC INTEGRATED DEVICE | authKW | 257459 | 1% | 100% | 5 |
5 | MILLIMETER WAVE DIODES | authKW | 231710 | 1% | 75% | 6 |
6 | DEPLETED OPTICAL THYRISTOR | authKW | 205967 | 1% | 100% | 4 |
7 | OPTICAL FUNCTIONAL DEVICE | authKW | 205963 | 1% | 67% | 6 |
8 | BULK BARRIER DIODES | authKW | 154475 | 1% | 100% | 3 |
9 | LIGHT EMITTING THYRISTOR | authKW | 154475 | 1% | 100% | 3 |
10 | OPTICAL AMPLIFICATION MODE | authKW | 154475 | 1% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 6766 | 62% | 0% | 366 |
2 | Physics, Applied | 4087 | 53% | 0% | 315 |
3 | Optics | 1016 | 18% | 0% | 108 |
4 | Physics, Condensed Matter | 201 | 12% | 0% | 69 |
5 | Telecommunications | 72 | 4% | 0% | 21 |
6 | Instruments & Instrumentation | 43 | 4% | 0% | 21 |
7 | COMPUTER APPLICATIONS & CYBERNETICS | 18 | 0% | 0% | 1 |
8 | Physics, Multidisciplinary | 10 | 4% | 0% | 22 |
9 | Nanoscience & Nanotechnology | 7 | 2% | 0% | 13 |
10 | Materials Science, Coatings & Films | 5 | 1% | 0% | 7 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | OPT INTERCONNECT | 91537 | 1% | 44% | 4 |
2 | MICROWAVE LIGHTWAVE TELECOMMUN | 74892 | 1% | 36% | 4 |
3 | ELE OMAGNET MICROWAVE MILLIMETRE WAVE DE | 51492 | 0% | 100% | 1 |
4 | HIGH SPEED DEVICE GRP | 51492 | 0% | 100% | 1 |
5 | OPTOELECT OPTO COMMUN | 51492 | 0% | 100% | 1 |
6 | PHOTON COMP PERCEPT | 51492 | 0% | 100% | 1 |
7 | PHOTON TECHNOL TELECOMMUN | 51492 | 0% | 100% | 1 |
8 | PL PHYS TWTONA | 51492 | 0% | 100% | 1 |
9 | TERAHERTZ MILLEMETER WAVES ICT | 51492 | 0% | 100% | 1 |
10 | FUJITSU LTD | 25745 | 0% | 50% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 12998 | 10% | 0% | 62 |
2 | ELECTRONICS LETTERS | 7765 | 13% | 0% | 77 |
3 | IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 7677 | 2% | 1% | 10 |
4 | SOLID-STATE ELECTRONICS | 6006 | 6% | 0% | 34 |
5 | IEEE PHOTONICS TECHNOLOGY LETTERS | 5310 | 7% | 0% | 41 |
6 | IEEE ELECTRON DEVICE LETTERS | 4449 | 5% | 0% | 28 |
7 | ELECTRON DEVICE LETTERS | 4267 | 1% | 2% | 5 |
8 | IEEE CIRCUITS & DEVICES | 3721 | 1% | 1% | 5 |
9 | IEEE JOURNAL OF QUANTUM ELECTRONICS | 2393 | 3% | 0% | 20 |
10 | APPLIED PHYSICS LETTERS | 2033 | 11% | 0% | 67 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CHOI, WK , CHOI, YW , (2008) DESIGN OF MONOLITHICALLY INTEGRATED VERTICAL CAVITY LASER WITH DEPLETED OPTICAL THYRISTOR FOR OPTICAL PROGRAMMABLE GATE ARRAY.OPTICS EXPRESS. VOL. 16. ISSUE 22. P. 18264-18274 | 20 | 87% | 3 |
2 | WANG, HL , MI, JP , ZHOU, XL , MERIGGI, L , STEER, M , CUI, BF , CHEN, WX , PAN, JQ , DING, Y , (2013) 1.06-MU M INGAAS/GAAS MULTIPLE-QUANTUM-WELL OPTICAL THYRISTOR LASERS WITH A PININ STRUCTURE.OPTICS LETTERS. VOL. 38. ISSUE 22. P. 4868-4871 | 13 | 93% | 2 |
3 | SHEIKHI, MH , AHMADI, V , MORAVVEJ-FARSHI, MK , (2002) A PHYSICAL MODEL FOR CHARACTERISTICS OF AN OPTICAL AMPLIFIER-SWITCH INTEGRATED DEVICE.IRANIAN JOURNAL OF SCIENCE AND TECHNOLOGY. VOL. 26. ISSUE B4. P. 665-672 | 16 | 94% | 0 |
4 | SWOGER, J , SIMMONS, JG , (1993) ELECTRICAL AND OPTICAL-PROPERTIES OF THE 4-TERMINAL DOUBLE-HETEROSTRUCTURE OPTOELECTRONIC SWITCH (DOES).IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 40. ISSUE 6. P. 1071-1080 | 21 | 95% | 2 |
5 | GUO, DF , (2006) A SCHOTTKY-CONTACT TRIANGULAR-BARRIER OPTOELECTRONIC SWITCH (STOS).IEEE ELECTRON DEVICE LETTERS. VOL. 27. ISSUE 1. P. 37-39 | 12 | 92% | 5 |
6 | TAKAHASHI, T , SATO, M , NAKASHA, Y , HARA, N , (2012) LATTICE-MATCHED P-GAASSB/N-INP BACKWARD DIODES OPERATING AT ZERO BIAS FOR MILLIMETER-WAVE APPLICATIONS.APPLIED PHYSICS EXPRESS. VOL. 5. ISSUE 9. P. - | 11 | 85% | 1 |
7 | AHMADI, V , NODA, S , SHIBATA, K , SASAKI, A , (1995) OPTICAL MULTI-STABLE SET-RESET FUNCTIONS OF OPTOELECTRONIC INTEGRATED DEVICE COMPOSED OF 6 HETEROJUNCTION PHOTOTRANSISTORS OVER 2 LASER-DIODES.SOLID-STATE ELECTRONICS. VOL. 38. ISSUE 3. P. 551 -556 | 17 | 89% | 5 |
8 | TAKAHASHI, T , SATO, M , NAKASHA, Y , HARA, N , (2015) SENSITIVITY IMPROVEMENT IN GAASSB-BASED HETEROJUNCTION BACKWARD DIODES BY OPTIMIZED DOPING CONCENTRATION.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 6. P. 1891 -1897 | 10 | 83% | 0 |
9 | GORDION, IM , GRIBNIKOV, ZS , KOROBOV, VA , MITIN, VV , (2000) FAST GATE TURN-OFF IN A MERGED THYRISTOR-LIKE STRUCTURE.SOLID-STATE ELECTRONICS. VOL. 44. ISSUE 10. P. 1723-1732 | 15 | 83% | 0 |
10 | VOSTOKOV, NV , SHASHKIN, VI , (2017) EXPERIMENTAL STUDIES OF THE FREQUENCY DEPENDENCE OF THE LOW-BARRIER MOTT DIODE IMPEDANCE.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 64. ISSUE 1. P. 109 -114 | 13 | 59% | 0 |
Classes with closest relation at Level 1 |