Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 30088 | 174 | 12.3 | 32% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
| 568 | 2 | HGCDTE//CDTE//CDZNTE | 14414 |
| 30088 | 1 | THERMOGRADIENT EFFECT//HETERO EPITAXIAL STRUCTURE//NANO HILLS | 174 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | THERMOGRADIENT EFFECT | authKW | 574330 | 3% | 55% | 6 |
| 2 | HETERO EPITAXIAL STRUCTURE | authKW | 233987 | 1% | 67% | 2 |
| 3 | NANO HILLS | authKW | 233987 | 1% | 67% | 2 |
| 4 | CDXHG1 XTE FILM | authKW | 175491 | 1% | 100% | 1 |
| 5 | CDXHG1 XTE POLYCRYSTALLINE FILM | authKW | 175491 | 1% | 100% | 1 |
| 6 | CDXHG1 XTE SEMICONDUCTOR | authKW | 175491 | 1% | 100% | 1 |
| 7 | EPITAXIAL HETEROSTRUCTURES N IN4SE3 P IN 4SE 31 XTE 3X | authKW | 175491 | 1% | 100% | 1 |
| 8 | GETTERS OF DOT DEFECTS | authKW | 175491 | 1% | 100% | 1 |
| 9 | ISP NANU | address | 175491 | 1% | 100% | 1 |
| 10 | LASER DONOR CENTER | authKW | 175491 | 1% | 100% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 2173 | 58% | 0% | 101 |
| 2 | Physics, Applied | 520 | 36% | 0% | 63 |
| 3 | Materials Science, Coatings & Films | 227 | 9% | 0% | 15 |
| 4 | Materials Science, Multidisciplinary | 169 | 24% | 0% | 42 |
| 5 | Physics, Multidisciplinary | 55 | 10% | 0% | 17 |
| 6 | Nanoscience & Nanotechnology | 27 | 5% | 0% | 9 |
| 7 | Engineering, Electrical & Electronic | 22 | 9% | 0% | 16 |
| 8 | Chemistry, Physical | 17 | 10% | 0% | 17 |
| 9 | Instruments & Instrumentation | 7 | 3% | 0% | 5 |
| 10 | Optics | 4 | 3% | 0% | 6 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | ISP NANU | 175491 | 1% | 100% | 1 |
| 2 | RC VIBROTECH | 175491 | 1% | 100% | 1 |
| 3 | CIIC UAEMOR | 87745 | 1% | 50% | 1 |
| 4 | PL PROBLEMS MATH MECH | 58496 | 1% | 33% | 1 |
| 5 | SEMICOND PHYS | 31274 | 18% | 1% | 31 |
| 6 | INVEST ENGN PL SCI | 17547 | 1% | 10% | 1 |
| 7 | SECT EXPT PHYS | 13497 | 1% | 8% | 1 |
| 8 | PROBLEMS LASER INFORMAT TECHNOL | 3024 | 1% | 2% | 1 |
| 9 | BIOMED DEVICES | 2698 | 1% | 2% | 1 |
| 10 | COMP SCI 2 | 2370 | 1% | 1% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 45502 | 22% | 1% | 38 |
| 2 | SEMICONDUCTORS | 12613 | 13% | 0% | 22 |
| 3 | UKRAINSKII FIZICHESKII ZHURNAL | 7676 | 7% | 0% | 12 |
| 4 | SOLID STATE PHENOMENA | 1986 | 3% | 0% | 5 |
| 5 | APPLIED SURFACE SCIENCE | 831 | 7% | 0% | 13 |
| 6 | INFRARED PHYSICS | 678 | 1% | 0% | 2 |
| 7 | NANOSCALE RESEARCH LETTERS | 641 | 2% | 0% | 4 |
| 8 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 544 | 3% | 0% | 5 |
| 9 | INORGANIC MATERIALS | 463 | 3% | 0% | 5 |
| 10 | DEFECT AND DIFFUSION FORUM | 381 | 1% | 0% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | GNATYUK, VA , AOKI, T , HATANAKA, Y , (2003) LASER-STIMULATED CONTROL OF INTERFACES AT GRAIN BOUNDARIES IN POLYCRYSTALLINE CDXHG1-XTE FILMS.APPLIED SURFACE SCIENCE. VOL. 216. ISSUE 1-4. P. 88 -93 | 9 | 82% | 3 |
| 2 | MEDVID, A , ONUFRIJEVS, P , MOZOLEVSKIS, G , DAUKSTA, E , RIMSA, R , (2012) TWO-STAGE MODEL OF NANOCONE FORMATION ON A SURFACE OF ELEMENTARY SEMICONDUCTORS BY LASER RADIATION.NANOSCALE RESEARCH LETTERS. VOL. 7. ISSUE . P. 1-6 | 8 | 47% | 1 |
| 3 | GNATYUK, VA , GORODNYCHENKO, OS , LOMOVTSEV, AV , MOZOL', PO , VLASENKO, OI , (1999) LASER-STIMULATED GETTERING PROCESSES IN CDXHG1-XTE SOLID SOLUTIONS.SOLID STATE PHENOMENA. VOL. 70. ISSUE . P. 253-257 | 6 | 86% | 0 |
| 4 | MEDVID, A , HATANAKA, Y , LITOVCHENKO, V , FEDORENKO, L , KORBUTJAK, D , KRYLYUK, S , (2002) MECHANISM OF GENERATION OF DEFECTS IN A SEMICONDUCTOR BY PULSE LASER RADIATION.ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001. VOL. 384-3. ISSUE . P. 291-296 | 7 | 58% | 2 |
| 5 | VLASENKO, AI , VLASENKO, ZK , (1999) TEMPERATURE DEPENDENCES OF THE PHOTOCONDUCTIVITY OF CDHGTE CRYSTALS WITH PHOTOACTIVE INCLUSIONS.SEMICONDUCTORS. VOL. 33. ISSUE 3. P. 282-285 | 5 | 83% | 1 |
| 6 | VLASENKO, AI , VLASENKO, ZK , (1999) CURRENT-ILLUMINATION CHARACTERISTICS OF CDHGTE CRYSTALS WITH PHOTOACTIVE INCLUSIONS.SEMICONDUCTORS. VOL. 33. ISSUE 3. P. 278-281 | 4 | 100% | 1 |
| 7 | GNATYUK, VA , (1999) PHOTOSENSITIZATION OF INSB CRYSTALS BY PULSED LASER IRRADIATION.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 32. ISSUE 20. P. 2687-2691 | 6 | 60% | 1 |
| 8 | MEDVID, A , LITOVCHENKO, VG , KORBUTJAK, D , KRILYUK, SG , FEDORENKO, LL , HATANAKA, Y , (2001) INFLUENCE OF LASER RADIATION ON PHOTOLUMINESCENCE OF CDTE.RADIATION MEASUREMENTS. VOL. 33. ISSUE 5. P. 725-730 | 6 | 55% | 11 |
| 9 | VLASENKO, AI , GNATYUK, VA , GORODNICHENKO, ES , MOZOL', PE , (2000) EFFECT OF EXCITATION INTENSITY AND ELECTRIC FIELD ON THE PHOTOCONDUCTIVITY RELAXATION IN CDXHG1-XTE/GAAS POLYCRYSTALLINE LAYERS.PHYSICS OF THE SOLID STATE. VOL. 42. ISSUE 7. P. 1222-1227 | 4 | 80% | 0 |
| 10 | MEDVID, A , BERZINA, B , TRINKLER, L , FEDORENKO, L , LYTVYN, P , YUSUPOV, N , YAMAGUCHI, T , SIRGHI, L , AOYAMA, M , (2003) FORMATION OF NANOSTRUCTURE ON SURFACE OF SIC BY LASER RADIATION.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 195. ISSUE 1. P. 199 -203 | 5 | 56% | 4 |
Classes with closest relation at Level 1 |