Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
508 | 3359 | 18.5 | 58% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
568 | 2 | HGCDTE//CDTE//CDZNTE | 14414 |
508 | 1 | HGCDTE//JOURNAL OF ELECTRONIC MATERIALS//MERCURY CADMIUM TELLURIDE | 3359 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | HGCDTE | authKW | 4801137 | 20% | 77% | 688 |
2 | JOURNAL OF ELECTRONIC MATERIALS | journal | 422236 | 20% | 7% | 671 |
3 | MERCURY CADMIUM TELLURIDE | authKW | 375627 | 2% | 67% | 62 |
4 | MOLECULAR BEAM EPITAXY MBE | authKW | 213369 | 3% | 21% | 110 |
5 | MICROPHYS | address | 200005 | 1% | 49% | 45 |
6 | HG1 XCDXTE | authKW | 197998 | 1% | 68% | 32 |
7 | INFRARED DETECTORS | authKW | 194442 | 4% | 18% | 122 |
8 | SHANGHAI TECH PHYS | address | 162272 | 6% | 8% | 213 |
9 | HGCDTE PHOTODIODES | authKW | 160254 | 1% | 77% | 23 |
10 | CERDEC NIGHT VIS ELECT SENSORS DIRECTORATE | address | 156236 | 1% | 90% | 19 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 34339 | 64% | 0% | 2147 |
2 | Engineering, Electrical & Electronic | 10797 | 34% | 0% | 1148 |
3 | Materials Science, Multidisciplinary | 10686 | 40% | 0% | 1354 |
4 | Physics, Condensed Matter | 4246 | 20% | 0% | 677 |
5 | Crystallography | 3337 | 9% | 0% | 304 |
6 | Optics | 3232 | 14% | 0% | 472 |
7 | Materials Science, Coatings & Films | 2386 | 6% | 0% | 218 |
8 | Instruments & Instrumentation | 291 | 4% | 0% | 127 |
9 | Materials Science, Characterization, Testing | 100 | 1% | 0% | 28 |
10 | Physics, Multidisciplinary | 99 | 4% | 0% | 145 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MICROPHYS | 200005 | 1% | 49% | 45 |
2 | SHANGHAI TECH PHYS | 162272 | 6% | 8% | 213 |
3 | CERDEC NIGHT VIS ELECT SENSORS DIRECTORATE | 156236 | 1% | 90% | 19 |
4 | INFRARED IMAGING MAT DETECTORS | 146391 | 1% | 33% | 49 |
5 | NVESD | 137749 | 1% | 63% | 24 |
6 | CERDEC | 74185 | 1% | 29% | 28 |
7 | INFRARED PHYS | 73977 | 4% | 7% | 123 |
8 | RDECOM | 52884 | 1% | 16% | 37 |
9 | ADV MAT DEVICES | 40012 | 1% | 14% | 31 |
10 | EPITAXY ADV MAT | 36351 | 0% | 67% | 6 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF ELECTRONIC MATERIALS | 422236 | 20% | 7% | 671 |
2 | INFRARED PHYSICS | 71310 | 3% | 9% | 90 |
3 | JOURNAL OF INFRARED AND MILLIMETER WAVES | 39868 | 3% | 5% | 93 |
4 | INFRARED PHYSICS & TECHNOLOGY | 28090 | 3% | 4% | 84 |
5 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 27962 | 5% | 2% | 157 |
6 | JOURNAL OF CRYSTAL GROWTH | 21849 | 8% | 1% | 275 |
7 | OPTO-ELECTRONICS REVIEW | 20615 | 1% | 5% | 43 |
8 | SEMICONDUCTORS | 17685 | 3% | 2% | 115 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 14640 | 5% | 1% | 152 |
10 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 12202 | 3% | 2% | 87 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HGCDTE | 4801137 | 20% | 77% | 688 | Search HGCDTE | Search HGCDTE |
2 | MERCURY CADMIUM TELLURIDE | 375627 | 2% | 67% | 62 | Search MERCURY+CADMIUM+TELLURIDE | Search MERCURY+CADMIUM+TELLURIDE |
3 | MOLECULAR BEAM EPITAXY MBE | 213369 | 3% | 21% | 110 | Search MOLECULAR+BEAM+EPITAXY+MBE | Search MOLECULAR+BEAM+EPITAXY+MBE |
4 | HG1 XCDXTE | 197998 | 1% | 68% | 32 | Search HG1+XCDXTE | Search HG1+XCDXTE |
5 | INFRARED DETECTORS | 194442 | 4% | 18% | 122 | Search INFRARED+DETECTORS | Search INFRARED+DETECTORS |
6 | HGCDTE PHOTODIODES | 160254 | 1% | 77% | 23 | Search HGCDTE+PHOTODIODES | Search HGCDTE+PHOTODIODES |
7 | AUGER SUPPRESSION | 136864 | 0% | 94% | 16 | Search AUGER+SUPPRESSION | Search AUGER+SUPPRESSION |
8 | HGCDTE SI | 127809 | 0% | 94% | 15 | Search HGCDTE+SI | Search HGCDTE+SI |
9 | LONG WAVELENGTH INFRARED LWIR | 125072 | 1% | 81% | 17 | Search LONG+WAVELENGTH+INFRARED+LWIR | Search LONG+WAVELENGTH+INFRARED+LWIR |
10 | PHOTOVOLTAIC DETECTOR | 118873 | 1% | 59% | 22 | Search PHOTOVOLTAIC+DETECTOR | Search PHOTOVOLTAIC+DETECTOR |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | LEI, W , ANTOSZEWSKI, J , FARAONE, L , (2015) PROGRESS, CHALLENGES, AND OPPORTUNITIES FOR HGCDTE INFRARED MATERIALS AND DETECTORS.APPLIED PHYSICS REVIEWS. VOL. 2. ISSUE 4. P. - | 106 | 68% | 6 |
2 | MYNBAEV, KD , IVANOV-OMSKII, VI , (2006) DOPING OF EPITAXIAL LAYERS AND HETEROSTRUCTURES BASED ON HGCDTE.SEMICONDUCTORS. VOL. 40. ISSUE 1. P. 1-21 | 73 | 90% | 7 |
3 | ROGALSKI, A , (2005) HGCDTE INFRARED DETECTOR MATERIAL: HISTORY, STATUS AND OUTLOOK.REPORTS ON PROGRESS IN PHYSICS. VOL. 68. ISSUE 10. P. 2267 -2336 | 55 | 76% | 270 |
4 | CAPPER, P , (1991) A REVIEW OF IMPURITY BEHAVIOR IN BULK AND EPITAXIAL HG1-XCDXTE.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 9. ISSUE 3. P. 1667-1681 | 99 | 79% | 44 |
5 | AGNIHOTRI, OP , LEE, HC , YANG, KD , (2002) PLASMA INDUCED TYPE CONVERSION IN MERCURY CADMIUM TELLURIDE.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 17. ISSUE 10. P. R11 -R19 | 53 | 96% | 10 |
6 | JOZWIKOWSKI, K , KOPYTKO, M , ROGALSKI, A , (2012) THE BULK GENERATION-RECOMBINATION PROCESSES AND THE CARRIER LIFETIME IN MID-WAVE INFRARED AND LONG-WAVE INFRARED LIQUID NITROGEN COOLED HGCDTE ALLOYS.JOURNAL OF APPLIED PHYSICS. VOL. 112. ISSUE 3. P. - | 41 | 91% | 8 |
7 | HU, WD , CHEN, XS , YE, ZH , FENG, AL , YIN, F , ZHANG, B , LIAO, L , LU, W , (2013) DEPENDENCE OF ION-IMPLANT-INDUCED LBIC NOVEL CHARACTERISTIC ON EXCITATION INTENSITY FOR LONG-WAVELENGTH HGCDTE-BASED PHOTOVOLTAIC INFRARED DETECTOR PIXEL ARRAYS.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 19. ISSUE 5. P. - | 30 | 100% | 34 |
8 | KALISHER, MH , HERNING, PE , TUNG, T , (1994) HG-RICH LIQUID-PHASE EPITAXY OF HG1-XCDXTE.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 29. ISSUE 1-4. P. 41-83 | 70 | 91% | 6 |
9 | MYNBAEV, KD , IVANOV-OMSKII, VI , (2003) MODIFICATION OF HG1-XCDXTE PROPERTIES BY LOW-ENERGY IONS.SEMICONDUCTORS. VOL. 37. ISSUE 10. P. 1127-1150 | 45 | 96% | 32 |
10 | DJURIC, Z , (1995) ISOTHERMAL VAPOR-PHASE EPITAXY OF MERCURY-CADMIUM TELLURIDE (HG,CD)TE - REVIEW.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. VOL. 6. ISSUE 4. P. 187-218 | 69 | 83% | 2 |
Classes with closest relation at Level 1 |