Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 24480 | 310 | 17.5 | 35% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
| 3050 | 2 | SOVIET PHYSICS SEMICONDUCTORS-USSR//PHYS MICROSTRUCT//MOBILITY SPECTRUM ANALYSIS | 2452 |
| 24480 | 1 | MOBILITY SPECTRUM ANALYSIS//QUANTITATIVE MOBILITY SPECTRUM ANALYSIS QMSA//MAGNETO TRANSPORT MEASUREMENT | 310 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | MOBILITY SPECTRUM ANALYSIS | authKW | 443250 | 2% | 75% | 6 |
| 2 | QUANTITATIVE MOBILITY SPECTRUM ANALYSIS QMSA | authKW | 307811 | 2% | 63% | 5 |
| 3 | MAGNETO TRANSPORT MEASUREMENT | authKW | 197001 | 1% | 100% | 2 |
| 4 | MOBILITY SPECTRUM | authKW | 189418 | 2% | 38% | 5 |
| 5 | ASTM INTERNATIONAL F115 COMPOUND SEMICONDUCTOR SUBCOMMITTEE | authKW | 98501 | 0% | 100% | 1 |
| 6 | BI CDTE SUPERLATTICES | authKW | 98501 | 0% | 100% | 1 |
| 7 | DEFECT TAGGING | authKW | 98501 | 0% | 100% | 1 |
| 8 | EFFECTIVE YIELD IMPROVEMENT | authKW | 98501 | 0% | 100% | 1 |
| 9 | GAASGAN WAFER PROCESS CONTROL | authKW | 98501 | 0% | 100% | 1 |
| 10 | GAPLESS SEMICONDUCTORS HG1 XCDXTE | authKW | 98501 | 0% | 100% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 3964 | 59% | 0% | 182 |
| 2 | Physics, Applied | 418 | 25% | 0% | 79 |
| 3 | Physics, Multidisciplinary | 309 | 16% | 0% | 49 |
| 4 | Materials Science, Multidisciplinary | 97 | 15% | 0% | 48 |
| 5 | Engineering, Electrical & Electronic | 30 | 8% | 0% | 26 |
| 6 | Materials Science, Coatings & Films | 19 | 2% | 0% | 7 |
| 7 | Spectroscopy | 15 | 3% | 0% | 8 |
| 8 | Optics | 13 | 4% | 0% | 13 |
| 9 | Nanoscience & Nanotechnology | 2 | 2% | 0% | 6 |
| 10 | Crystallography | 2 | 1% | 0% | 4 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | DAGHESTAN PHYS AMIRKHANOV | 49249 | 0% | 50% | 1 |
| 2 | DAGESTAN SCI | 30667 | 5% | 2% | 15 |
| 3 | AMIRKHANOV PHYS | 27255 | 2% | 4% | 7 |
| 4 | LASHKAREV SEMICOND PHYS | 20847 | 2% | 4% | 6 |
| 5 | DAGHESTAN SCI | 17706 | 2% | 4% | 5 |
| 6 | LETI DOPT | 12311 | 0% | 13% | 1 |
| 7 | NEW YORK ADV TECHNOL ULTRAFAST PHOTON MAT A | 10943 | 0% | 11% | 1 |
| 8 | ELECT ELECT COMP ENG | 9848 | 0% | 10% | 1 |
| 9 | LASHKARYOV SEMICOND PHYS | 6237 | 1% | 2% | 3 |
| 10 | ELE TECHNOL | 5470 | 0% | 6% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 63659 | 19% | 1% | 60 |
| 2 | SEMICONDUCTORS | 9870 | 8% | 0% | 26 |
| 3 | UKRAINSKII FIZICHESKII ZHURNAL | 6723 | 5% | 0% | 15 |
| 4 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 3642 | 9% | 0% | 27 |
| 5 | ACTA ELECTRONICA | 1789 | 0% | 2% | 1 |
| 6 | FIZIKA TVERDOGO TELA | 1746 | 5% | 0% | 14 |
| 7 | ZHURNAL EKSPERIMENTALNOI I TEORETICHESKOI FIZIKI | 989 | 3% | 0% | 8 |
| 8 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 940 | 5% | 0% | 14 |
| 9 | JOURNAL OF ELECTRONIC MATERIALS | 808 | 3% | 0% | 9 |
| 10 | OPTICS AND SPECTROSCOPY | 635 | 2% | 0% | 6 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | JOLLEY, G , UMANA-MEMBRENO, GA , AKHAVAN, ND , ANTOSZEWSKI, J , FARAONE, L , FISCHETTI, MV , (2014) INTRINSIC BROADENING OF THE MOBILITY SPECTRUM OF BULK N-TYPE GAAS.NEW JOURNAL OF PHYSICS. VOL. 16. ISSUE . P. - | 20 | 63% | 2 |
| 2 | KAMILOV, IK , GABIBOV, SF , DAUNOV, MI , MOLLAEV, AY , (2011) EFFECT OF PRESSURE ON THE ELECTRONIC SPECTRUM OF INDIUM ARSENIDE.SEMICONDUCTORS. VOL. 45. ISSUE 12. P. 1543-1549 | 14 | 74% | 0 |
| 3 | UMANA-MEMBRENO, GA , ANTOSZEWSKI, J , FARAONE, L , (2013) MOBILITY SPECTRUM ANALYSIS OF CARRIER TRANSPORT AT INSULATOR/SEMICONDUCTOR INTERFACES.MICROELECTRONIC ENGINEERING. VOL. 109. ISSUE . P. 232-235 | 14 | 58% | 3 |
| 4 | DZIUBA, Z , GORSKA, M , DYBKO, K , PRZESLAWSKI, T , REGINSKI, K , (2003) ANALYSIS OF ELECTRICAL CONDUCTION IN AN N-TYPE GAAS EPILAYER.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 77. ISSUE 7. P. 937 -945 | 15 | 71% | 0 |
| 5 | WOLKENBERG, A , PRZESLAWSKI, T , (2009) THE HYPOTHESIS OF CHARGE COMPONENTS OF THE CONDUCTIVITY OF A GAAS MOLECULAR BEAM EPITAXY EPI-LAYER.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 24. ISSUE 9. P. - | 10 | 83% | 1 |
| 6 | BROWN, AE , JAIME-VASQUEZ, M , ALMEIDA, LA , ARIAS, J , LENNON, CM , JACOBS, RN , PELLEGRINO, J , SIVANANTHAN, S , (2013) VARIABLE-FIELD HALL MEASUREMENT AND TRANSPORT IN LW SINGLE-LAYER N-TYPE MBE HG1-X CD (X) TE.JOURNAL OF ELECTRONIC MATERIALS. VOL. 42. ISSUE 11. P. 3224-3230 | 11 | 50% | 2 |
| 7 | DAUNOV, M , KAMILOV, I , GABIBOV, S , MAGOMEDOV, A , (2008) A QUASI-ZERO-GAP SEMICONDUCTOR AT HIGH PRESSURES AS A MODEL OF AMORPHOUS SEMICONDUCTOR.RUSSIAN PHYSICS JOURNAL. VOL. 51. ISSUE 7. P. 680-685 | 7 | 88% | 0 |
| 8 | DAUNOV, MI , KAMILOV, IK , GABIBOV, SF , (2010) CONCEPT OF MOBILITY THRESHOLD: THE IOFFE-REGEL RULE.PHYSICS OF THE SOLID STATE. VOL. 52. ISSUE 10. P. 2019-2025 | 8 | 73% | 0 |
| 9 | BETKO, J , MORVIC, M , (2000) INDICATION OF MIXED CONDUCTIVITY IN III-V SEMICONDUCTORS USING CONDUCTIVITY, HALL EFFECT AND MAGNETORESISTANCE MEASUREMENTS.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 181. ISSUE 1. P. 169-175 | 10 | 77% | 3 |
| 10 | VENGER, EF , GASAN-ZADE, SG , STRIKHA, MV , SHEPELSKII, GA , (2007) THE BAND STRUCTURE AND THE DOUBLE METAL-INSULATOR-METAL PHASE TRANSITION IN THE CONDUCTIVITY OF ELASTICALLY STRAINED ZERO-GAP CDXHG1-XTE.SEMICONDUCTORS. VOL. 41. ISSUE 3. P. 266-271 | 6 | 100% | 0 |
Classes with closest relation at Level 1 |