Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 8191 | 1282 | 17.5 | 68% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
| 47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
| 568 | 2 | HGCDTE//CDTE//CDZNTE | 14414 |
| 8191 | 1 | CDTE GAAS//CDTE//CDZNTE CDTE | 1282 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | CDTE GAAS | authKW | 99235 | 0% | 83% | 5 |
| 2 | CDTE | authKW | 84301 | 5% | 5% | 69 |
| 3 | CDZNTE CDTE | authKW | 71451 | 0% | 100% | 3 |
| 4 | CDZNTE GAAS | authKW | 71451 | 0% | 100% | 3 |
| 5 | H2T VPE GROWTH | authKW | 71451 | 0% | 100% | 3 |
| 6 | JOURNAL OF CRYSTAL GROWTH | journal | 61141 | 22% | 1% | 282 |
| 7 | CD RESERVOIR | authKW | 47634 | 0% | 100% | 2 |
| 8 | CD1 YZNYTEY APPROXIMATE TO 0045 GAAS | authKW | 47634 | 0% | 100% | 2 |
| 9 | CDTE GAAS HETEROSTRUCTURE | authKW | 47634 | 0% | 100% | 2 |
| 10 | CDTE SI HETEROSTRUCTURES | authKW | 47634 | 0% | 100% | 2 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Applied | 15421 | 69% | 0% | 885 |
| 2 | Crystallography | 10142 | 24% | 0% | 311 |
| 3 | Materials Science, Multidisciplinary | 3995 | 40% | 0% | 512 |
| 4 | Materials Science, Coatings & Films | 2595 | 11% | 0% | 136 |
| 5 | Physics, Condensed Matter | 1731 | 21% | 0% | 266 |
| 6 | Engineering, Electrical & Electronic | 331 | 12% | 0% | 152 |
| 7 | Nanoscience & Nanotechnology | 66 | 3% | 0% | 44 |
| 8 | Physics, Multidisciplinary | 34 | 4% | 0% | 54 |
| 9 | Materials Science, Characterization, Testing | 13 | 1% | 0% | 7 |
| 10 | Microscopy | 8 | 0% | 0% | 5 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | NETPARK INCUBATOR | 31755 | 0% | 67% | 2 |
| 2 | ADV MAT DEVIES | 23817 | 0% | 100% | 1 |
| 3 | CHANGCHUN INT OPT FINE MECH PHYS | 23817 | 0% | 100% | 1 |
| 4 | CHEONGRYANG | 23817 | 0% | 100% | 1 |
| 5 | COMANDO GERAL TECNOL AEROSPACIAL | 23817 | 0% | 100% | 1 |
| 6 | DIPARTIMENTO INGN INNOVAZ MAT | 23817 | 0% | 100% | 1 |
| 7 | EPITAXIAL | 23817 | 0% | 100% | 1 |
| 8 | KRISTALLGR H | 23817 | 0% | 100% | 1 |
| 9 | MAT DEVICES PHOTON SEMICOND | 23817 | 0% | 100% | 1 |
| 10 | PHYS SEMICOND GRP | 23817 | 0% | 100% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | JOURNAL OF CRYSTAL GROWTH | 61141 | 22% | 1% | 282 |
| 2 | JOURNAL OF ELECTRONIC MATERIALS | 15226 | 6% | 1% | 79 |
| 3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 8401 | 6% | 1% | 71 |
| 4 | APPLIED PHYSICS LETTERS | 6112 | 13% | 0% | 170 |
| 5 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2343 | 3% | 0% | 41 |
| 6 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1983 | 2% | 0% | 25 |
| 7 | INSTITUTE OF PHYSICS CONFERENCE SERIES | 1367 | 2% | 0% | 24 |
| 8 | JOURNAL OF APPLIED PHYSICS | 1186 | 6% | 0% | 76 |
| 9 | PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 919 | 0% | 1% | 5 |
| 10 | SUPERLATTICES AND MICROSTRUCTURES | 710 | 1% | 0% | 14 |
Author Key Words |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | CDTE GAAS | 99235 | 0% | 83% | 5 | Search CDTE+GAAS | Search CDTE+GAAS |
| 2 | CDTE | 84301 | 5% | 5% | 69 | Search CDTE | Search CDTE |
| 3 | CDZNTE CDTE | 71451 | 0% | 100% | 3 | Search CDZNTE+CDTE | Search CDZNTE+CDTE |
| 4 | CDZNTE GAAS | 71451 | 0% | 100% | 3 | Search CDZNTE+GAAS | Search CDZNTE+GAAS |
| 5 | H2T VPE GROWTH | 71451 | 0% | 100% | 3 | Search H2T+VPE+GROWTH | Search H2T+VPE+GROWTH |
| 6 | CD RESERVOIR | 47634 | 0% | 100% | 2 | Search CD+RESERVOIR | Search CD+RESERVOIR |
| 7 | CD1 YZNYTEY APPROXIMATE TO 0045 GAAS | 47634 | 0% | 100% | 2 | Search CD1+YZNYTEY+APPROXIMATE+TO+0045+GAAS | Search CD1+YZNYTEY+APPROXIMATE+TO+0045+GAAS |
| 8 | CDTE GAAS HETEROSTRUCTURE | 47634 | 0% | 100% | 2 | Search CDTE+GAAS+HETEROSTRUCTURE | Search CDTE+GAAS+HETEROSTRUCTURE |
| 9 | CDTE SI HETEROSTRUCTURES | 47634 | 0% | 100% | 2 | Search CDTE+SI+HETEROSTRUCTURES | Search CDTE+SI+HETEROSTRUCTURES |
| 10 | HIGH RESOLUTION LOW ENERGY ELECTRON DIFFRACTION | 47634 | 0% | 100% | 2 | Search HIGH+RESOLUTION+LOW+ENERGY+ELECTRON+DIFFRACTION | Search HIGH+RESOLUTION+LOW+ENERGY+ELECTRON+DIFFRACTION |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | MULLIN, JB , IRVINE, SJC , (1994) METALORGANIC VAPOR-PHASE EPITAXY OF MERCURY CADMIUM TELLURIDE.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 29. ISSUE 1-4. P. 217-252 | 55 | 71% | 9 |
| 2 | CIBERT, J , TATARENKO, S , (1997) THE SURFACE STRUCTURE OF A II-VI COMPOUND: CDTE.DEFECT AND DIFFUSION FORUM/JOURNAL. VOL. 150. ISSUE . P. 1-34 | 47 | 59% | 6 |
| 3 | HICKS, RF , (1992) THE CHEMISTRY OF THE ORGANOMETALLIC VAPOR-PHASE EPITAXY OF MERCURY CADMIUM TELLURIDE.PROCEEDINGS OF THE IEEE. VOL. 80. ISSUE 10. P. 1625-1640 | 55 | 57% | 10 |
| 4 | MORA-SERO, I , POLOP, C , OCAL, C , AGUILO, M , MUNOZ-SANJOSE, V , (2003) INFLUENCE OF TWINNED STRUCTURE ON THE MORPHOLOGY OF CDTE(111) LAYERS GROWN BY MOCVD ON GAAS(100) SUBSTRATES.JOURNAL OF CRYSTAL GROWTH. VOL. 257. ISSUE 1-2. P. 60-68 | 23 | 77% | 9 |
| 5 | ZHAO, J , ZENG, YP , LIU, C , CUI, LJ , (2012) EFFECTS OF A ZNTE BUFFER LAYER ON STRUCTURAL QUALITY AND MORPHOLOGY OF CDTE EPILAYER GROWN ON (001)GAAS BY MOLECULAR BEAM EPITAXY.VACUUM. VOL. 86. ISSUE 8. P. 1062-1066 | 20 | 67% | 1 |
| 6 | TRIBOULET, R , TROMSONCARLI, A , LORANS, D , DUY, TN , (1993) SUBSTRATE ISSUES FOR THE GROWTH OF MERCURY CADMIUM TELLURIDE.JOURNAL OF ELECTRONIC MATERIALS. VOL. 22. ISSUE 8. P. 827-834 | 34 | 67% | 26 |
| 7 | TRIBOULET, R , (1991) MOVPE OF NARROW-BAND GAP II-VI MATERIALS.JOURNAL OF CRYSTAL GROWTH. VOL. 107. ISSUE 1-4. P. 598-604 | 27 | 93% | 12 |
| 8 | XIN, Y , BROWNING, ND , RUJIRAWAT, S , SIVANANTHAN, S , CHEN, YP , NELLIST, PD , PENNYCOOK, SJ , (1998) INVESTIGATION OF THE EVOLUTION OF SINGLE DOMAIN, (111) B CDTE FILMS BY MOLECULAR BEAM EPITAXY ON MISCUT (001) SI SUBSTRATE.JOURNAL OF APPLIED PHYSICS. VOL. 84. ISSUE 8. P. 4292 -4299 | 20 | 80% | 39 |
| 9 | SMITH, DJ , TSEN, SCY , CHANDRASEKHAR, D , CROZIER, PA , RUJIRAWAT, S , BRILL, G , CHEN, YP , SPORKEN, R , SIVANANTHAN, S , (2000) GROWTH AND CHARACTERIZATION OF CDTE/SI HETEROSTRUCTURES - EFFECT OF SUBSTRATE ORIENTATION.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. VOL. 77. ISSUE 1. P. 93-100 | 17 | 89% | 21 |
| 10 | ZUNIGA-PEREZ, J , TENA-ZAERA, R , MUNOZ-SANJOSE, V , (2004) STRUCTURAL CHARACTERIZATION OF CDTE LAYERS GROWN ON (0001) SAPPHIRE BY MOCVD.JOURNAL OF CRYSTAL GROWTH. VOL. 270. ISSUE 3-4. P. 309-315 | 18 | 75% | 12 |
Classes with closest relation at Level 1 |