Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
11062 | 1010 | 15.8 | 70% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
589 | 3 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 15224 |
664 | 2 | ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS | 13339 |
11062 | 1 | MFIS//MEMORY WINDOW//MFIS STRUCTURE | 1010 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | MFIS | authKW | 1391292 | 6% | 72% | 64 |
2 | MEMORY WINDOW | authKW | 1090753 | 6% | 57% | 63 |
3 | MFIS STRUCTURE | authKW | 1084214 | 5% | 78% | 46 |
4 | MFSFET | authKW | 785192 | 3% | 84% | 31 |
5 | FEFET | authKW | 640567 | 3% | 76% | 28 |
6 | MFIS FET | authKW | 527664 | 2% | 73% | 24 |
7 | FERROELECTRIC TRANSISTOR | authKW | 496066 | 2% | 86% | 19 |
8 | FERROELECTRIC GATE FET | authKW | 485381 | 2% | 94% | 17 |
9 | YMNO3 | authKW | 371545 | 3% | 47% | 26 |
10 | FFET | authKW | 362778 | 1% | 100% | 12 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 10855 | 65% | 0% | 661 |
2 | Physics, Condensed Matter | 5247 | 38% | 0% | 387 |
3 | Engineering, Electrical & Electronic | 2417 | 30% | 0% | 302 |
4 | Materials Science, Multidisciplinary | 731 | 21% | 0% | 216 |
5 | Materials Science, Coatings & Films | 549 | 6% | 0% | 58 |
6 | Materials Science, Ceramics | 267 | 4% | 0% | 36 |
7 | Physics, Multidisciplinary | 169 | 8% | 0% | 77 |
8 | Materials Science, Composites | 46 | 1% | 0% | 12 |
9 | Nanoscience & Nanotechnology | 45 | 3% | 0% | 33 |
10 | Crystallography | 3 | 1% | 0% | 12 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | FRONTIER ABORAT | 121471 | 5% | 8% | 48 |
2 | PRECIS INTELLIGENCE | 66870 | 5% | 4% | 53 |
3 | AREA MAT DEVICE PHYS | 62775 | 1% | 23% | 9 |
4 | SHIMODA NANOLIQUID PROC PROJECT | 44878 | 1% | 21% | 7 |
5 | GREEN DEVICES | 42048 | 1% | 17% | 8 |
6 | HUNAN PROV KEY FILM MAT PLICAT EQUIPM | 38866 | 0% | 43% | 3 |
7 | ADV MAT RHEOL PRPERTIES | 30231 | 0% | 100% | 1 |
8 | ADV TECHNOL ULSI DEVICES | 30231 | 0% | 100% | 1 |
9 | ASIA SYST | 30231 | 0% | 100% | 1 |
10 | BIOTECHNOL ENVIRONM STANDARDS | 30231 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | INTEGRATED FERROELECTRICS | 252311 | 18% | 5% | 181 |
2 | FERROELECTRICS | 23147 | 10% | 1% | 98 |
3 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 9324 | 10% | 0% | 98 |
4 | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 6978 | 6% | 0% | 60 |
5 | TOPICS IN APPLIED PHYSICS | 4647 | 1% | 1% | 12 |
6 | APPLIED PHYSICS LETTERS | 3271 | 11% | 0% | 111 |
7 | IEEE ELECTRON DEVICE LETTERS | 941 | 2% | 0% | 17 |
8 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 686 | 2% | 0% | 19 |
9 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 619 | 1% | 0% | 13 |
10 | JOURNAL OF APPLIED PHYSICS | 532 | 5% | 0% | 46 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | MFIS | 1391292 | 6% | 72% | 64 | Search MFIS | Search MFIS |
2 | MEMORY WINDOW | 1090753 | 6% | 57% | 63 | Search MEMORY+WINDOW | Search MEMORY+WINDOW |
3 | MFIS STRUCTURE | 1084214 | 5% | 78% | 46 | Search MFIS+STRUCTURE | Search MFIS+STRUCTURE |
4 | MFSFET | 785192 | 3% | 84% | 31 | Search MFSFET | Search MFSFET |
5 | FEFET | 640567 | 3% | 76% | 28 | Search FEFET | Search FEFET |
6 | MFIS FET | 527664 | 2% | 73% | 24 | Search MFIS+FET | Search MFIS+FET |
7 | FERROELECTRIC TRANSISTOR | 496066 | 2% | 86% | 19 | Search FERROELECTRIC+TRANSISTOR | Search FERROELECTRIC+TRANSISTOR |
8 | FERROELECTRIC GATE FET | 485381 | 2% | 94% | 17 | Search FERROELECTRIC+GATE+FET | Search FERROELECTRIC+GATE+FET |
9 | YMNO3 | 371545 | 3% | 47% | 26 | Search YMNO3 | Search YMNO3 |
10 | FFET | 362778 | 1% | 100% | 12 | Search FFET | Search FFET |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | TUE, PT , MIYASAKO, T , TOKUMITSU, E , SHIMODA, T , (2013) EFFECT OF COERCIVE VOLTAGE AND CHARGE INJECTION ON PERFORMANCE OF A FERROELECTRIC-GATE THIN-FILM TRANSISTOR.ADVANCES IN MATERIALS SCIENCE AND ENGINEERING. VOL. . ISSUE . P. - | 26 | 100% | 1 |
2 | SAKAI, S , TAKAHASHI, M , (2010) RECENT PROGRESS OF FERROELECTRIC-GATE FIELD-EFFECT TRANSISTORS AND APPLICATIONS TO NONVOLATILE LOGIC AND FENAND FLASH MEMORY.MATERIALS. VOL. 3. ISSUE 11. P. 4950 -4964 | 29 | 91% | 15 |
3 | HAI, LV , TAKAHASHI, M , SAKAI, S , (2010) FABRICATION AND CHARACTERIZATION OF SUB-0.6-MU M FERROELECTRIC-GATE FIELD-EFFECT TRANSISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 25. ISSUE 11. P. - | 23 | 85% | 7 |
4 | HAGA, K , NAKADA, Y , RICINSCHI, D , TOKUMITSU, E , (2014) RELATIONSHIP BETWEEN SOURCE/DRAIN-CONTACT STRUCTURES AND SWITCHING CHARACTERISTICS IN OXIDE-CHANNEL FERROELECTRIC-GATE THIN-FILM TRANSISTORS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 9. P. - | 25 | 68% | 0 |
5 | WENG, XD , SUN, QQ , JIANG, AQ , ZHANG, DW , (2010) CHARACTERIZATION OF AU/PB(ZR0.96TI0.04)O-3/AL2O3/SI ANTIFERROELECTRIC FIELD-EFFECT TRANSISTORS FOR MEMORY APPLICATION.JOURNAL OF ELECTROCERAMICS. VOL. 25. ISSUE 2-4. P. 174-178 | 21 | 84% | 1 |
6 | SUZUKI, K , (2008) PREPARATION OF FERROELECTRIC (Y, YB)MNO3 FILMS BY CHEMICAL SOLUTION PROCESS.JOURNAL OF THE CERAMIC SOCIETY OF JAPAN. VOL. 116. ISSUE 1350. P. 265 -270 | 21 | 84% | 0 |
7 | SAKAI, S , TAKAHASHI, M , (2016) NOVEL APPLICATION OF FEFETS TO NAND FLASH MEMORY CIRCUITS.FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS. VOL. 131. ISSUE . P. 271 -293 | 17 | 81% | 0 |
8 | BOZGEYIK, MS , CROSS, JS , ISHIWARA, H , SHINOZAKI, K , (2012) ELECTRICAL AND MEMORY WINDOW PROPERTIES OF SR0.8-XBAXBI2.2TA2-YZRYO9 FERROELECTRIC GATE IN METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURE.JOURNAL OF ELECTROCERAMICS. VOL. 28. ISSUE 2-3. P. 158 -164 | 17 | 77% | 2 |
9 | HAGA, K , TOKUMITSU, E , (2014) FABRICATION AND CHARACTERIZATION OF FERROELECTRIC-GATE THIN-FILM TRANSISTORS WITH AN AMORPHOUS OXIDE SEMICONDUCTOR, AMORPHOUS IN-GA-ZN-O.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 11. P. - | 26 | 47% | 0 |
10 | WATANABE, Y , (2005) PHYSICS OF FERROELECTRIC INTERFACES: AN ATTEMPT AT NANOFERROELECTRIC PHYSICS.FERROELECTRIC THIN FILMS. VOL. 98. ISSUE . P. 177 -197 | 21 | 72% | 6 |
Classes with closest relation at Level 1 |