Class information for:
Level 1: MFIS//MEMORY WINDOW//MFIS STRUCTURE

Basic class information

Class id #P Avg. number of
references
Database coverage
of references
11062 1010 15.8 70%



Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes

The table includes all classes above and classes immediately below the current class.



Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
589 3       ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS 15224
664 2             ATOMIC LAYER DEPOSITION//HFO2//HIGH K DIELECTRICS 13339
11062 1                   MFIS//MEMORY WINDOW//MFIS STRUCTURE 1010

Terms with highest relevance score



rank Term termType Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 MFIS authKW 1391292 6% 72% 64
2 MEMORY WINDOW authKW 1090753 6% 57% 63
3 MFIS STRUCTURE authKW 1084214 5% 78% 46
4 MFSFET authKW 785192 3% 84% 31
5 FEFET authKW 640567 3% 76% 28
6 MFIS FET authKW 527664 2% 73% 24
7 FERROELECTRIC TRANSISTOR authKW 496066 2% 86% 19
8 FERROELECTRIC GATE FET authKW 485381 2% 94% 17
9 YMNO3 authKW 371545 3% 47% 26
10 FFET authKW 362778 1% 100% 12

Web of Science journal categories



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 Physics, Applied 10855 65% 0% 661
2 Physics, Condensed Matter 5247 38% 0% 387
3 Engineering, Electrical & Electronic 2417 30% 0% 302
4 Materials Science, Multidisciplinary 731 21% 0% 216
5 Materials Science, Coatings & Films 549 6% 0% 58
6 Materials Science, Ceramics 267 4% 0% 36
7 Physics, Multidisciplinary 169 8% 0% 77
8 Materials Science, Composites 46 1% 0% 12
9 Nanoscience & Nanotechnology 45 3% 0% 33
10 Crystallography 3 1% 0% 12

Address terms



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 FRONTIER ABORAT 121471 5% 8% 48
2 PRECIS INTELLIGENCE 66870 5% 4% 53
3 AREA MAT DEVICE PHYS 62775 1% 23% 9
4 SHIMODA NANOLIQUID PROC PROJECT 44878 1% 21% 7
5 GREEN DEVICES 42048 1% 17% 8
6 HUNAN PROV KEY FILM MAT PLICAT EQUIPM 38866 0% 43% 3
7 ADV MAT RHEOL PRPERTIES 30231 0% 100% 1
8 ADV TECHNOL ULSI DEVICES 30231 0% 100% 1
9 ASIA SYST 30231 0% 100% 1
10 BIOTECHNOL ENVIRONM STANDARDS 30231 0% 100% 1

Journals



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
1 INTEGRATED FERROELECTRICS 252311 18% 5% 181
2 FERROELECTRICS 23147 10% 1% 98
3 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 9324 10% 0% 98
4 JOURNAL OF THE KOREAN PHYSICAL SOCIETY 6978 6% 0% 60
5 TOPICS IN APPLIED PHYSICS 4647 1% 1% 12
6 APPLIED PHYSICS LETTERS 3271 11% 0% 111
7 IEEE ELECTRON DEVICE LETTERS 941 2% 0% 17
8 IEEE TRANSACTIONS ON ELECTRON DEVICES 686 2% 0% 19
9 SEMICONDUCTOR SCIENCE AND TECHNOLOGY 619 1% 0% 13
10 JOURNAL OF APPLIED PHYSICS 532 5% 0% 46

Author Key Words



Rank Term Chi square Shr. of publ. in
class containing
term
Class's shr. of
term's tot. occurrences
#P with
term in
class
LCSH search Wikipedia search
1 MFIS 1391292 6% 72% 64 Search MFIS Search MFIS
2 MEMORY WINDOW 1090753 6% 57% 63 Search MEMORY+WINDOW Search MEMORY+WINDOW
3 MFIS STRUCTURE 1084214 5% 78% 46 Search MFIS+STRUCTURE Search MFIS+STRUCTURE
4 MFSFET 785192 3% 84% 31 Search MFSFET Search MFSFET
5 FEFET 640567 3% 76% 28 Search FEFET Search FEFET
6 MFIS FET 527664 2% 73% 24 Search MFIS+FET Search MFIS+FET
7 FERROELECTRIC TRANSISTOR 496066 2% 86% 19 Search FERROELECTRIC+TRANSISTOR Search FERROELECTRIC+TRANSISTOR
8 FERROELECTRIC GATE FET 485381 2% 94% 17 Search FERROELECTRIC+GATE+FET Search FERROELECTRIC+GATE+FET
9 YMNO3 371545 3% 47% 26 Search YMNO3 Search YMNO3
10 FFET 362778 1% 100% 12 Search FFET Search FFET

Core articles

The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.



Rank Reference # ref.
in cl.
Shr. of ref. in
cl.
Citations
1 TUE, PT , MIYASAKO, T , TOKUMITSU, E , SHIMODA, T , (2013) EFFECT OF COERCIVE VOLTAGE AND CHARGE INJECTION ON PERFORMANCE OF A FERROELECTRIC-GATE THIN-FILM TRANSISTOR.ADVANCES IN MATERIALS SCIENCE AND ENGINEERING. VOL. . ISSUE . P. - 26 100% 1
2 SAKAI, S , TAKAHASHI, M , (2010) RECENT PROGRESS OF FERROELECTRIC-GATE FIELD-EFFECT TRANSISTORS AND APPLICATIONS TO NONVOLATILE LOGIC AND FENAND FLASH MEMORY.MATERIALS. VOL. 3. ISSUE 11. P. 4950 -4964 29 91% 15
3 HAI, LV , TAKAHASHI, M , SAKAI, S , (2010) FABRICATION AND CHARACTERIZATION OF SUB-0.6-MU M FERROELECTRIC-GATE FIELD-EFFECT TRANSISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 25. ISSUE 11. P. - 23 85% 7
4 HAGA, K , NAKADA, Y , RICINSCHI, D , TOKUMITSU, E , (2014) RELATIONSHIP BETWEEN SOURCE/DRAIN-CONTACT STRUCTURES AND SWITCHING CHARACTERISTICS IN OXIDE-CHANNEL FERROELECTRIC-GATE THIN-FILM TRANSISTORS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 9. P. - 25 68% 0
5 WENG, XD , SUN, QQ , JIANG, AQ , ZHANG, DW , (2010) CHARACTERIZATION OF AU/PB(ZR0.96TI0.04)O-3/AL2O3/SI ANTIFERROELECTRIC FIELD-EFFECT TRANSISTORS FOR MEMORY APPLICATION.JOURNAL OF ELECTROCERAMICS. VOL. 25. ISSUE 2-4. P. 174-178 21 84% 1
6 SUZUKI, K , (2008) PREPARATION OF FERROELECTRIC (Y, YB)MNO3 FILMS BY CHEMICAL SOLUTION PROCESS.JOURNAL OF THE CERAMIC SOCIETY OF JAPAN. VOL. 116. ISSUE 1350. P. 265 -270 21 84% 0
7 SAKAI, S , TAKAHASHI, M , (2016) NOVEL APPLICATION OF FEFETS TO NAND FLASH MEMORY CIRCUITS.FERROELECTRIC-GATE FIELD EFFECT TRANSISTOR MEMORIES: DEVICE PHYSICS AND APPLICATIONS. VOL. 131. ISSUE . P. 271 -293 17 81% 0
8 BOZGEYIK, MS , CROSS, JS , ISHIWARA, H , SHINOZAKI, K , (2012) ELECTRICAL AND MEMORY WINDOW PROPERTIES OF SR0.8-XBAXBI2.2TA2-YZRYO9 FERROELECTRIC GATE IN METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURE.JOURNAL OF ELECTROCERAMICS. VOL. 28. ISSUE 2-3. P. 158 -164 17 77% 2
9 HAGA, K , TOKUMITSU, E , (2014) FABRICATION AND CHARACTERIZATION OF FERROELECTRIC-GATE THIN-FILM TRANSISTORS WITH AN AMORPHOUS OXIDE SEMICONDUCTOR, AMORPHOUS IN-GA-ZN-O.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 11. P. - 26 47% 0
10 WATANABE, Y , (2005) PHYSICS OF FERROELECTRIC INTERFACES: AN ATTEMPT AT NANOFERROELECTRIC PHYSICS.FERROELECTRIC THIN FILMS. VOL. 98. ISSUE . P. 177 -197 21 72% 6

Classes with closest relation at Level 1



Rank Class id link
1 28210 NEGATIVE CAPACITANCE//CHAIR NANOELECT MAT//NAM GGMBH
2 4215 INTEGRATED FERROELECTRICS//PZT//FERAM
3 21402 SI001 SUBSTRATES//S UNICAT//INLUMR5270
4 251 BISMUTH TITANATE//BI4TI3O12//BISMUTH LAYER STRUCTURED FERROELECTRICS
5 11770 CEO2 FILM//CEO2 THIN FILM//CEO2
6 31689 FERROELECTRIC SEMICONDUCTOR//ENGN ELECT INFORMAT ENGN//BISTABLE CONDUCTIVITY
7 21165 SR2NB2O7//2D ELECTRON HOLE LATTICE//CITRIC COMPLEXES
8 1797 FERROELECTRIC SUPERLATTICE//MICRO NANO PHYS MECH//FERROELECTRIC TUNNEL JUNCTION
9 20013 Y2O3 FILM//GADOLINIUM OXIDE GD2O3//Y2O3 THIN FILMS
10 2494 MULTIFERROICS//RUTGERS EMERGENT MAT//HEXAGONAL MANGANITES

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