Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
13018 | 865 | 17.8 | 67% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
505 | 3 | ZHURNAL NAUCHNOI I PRIKLADNOI FOTOGRAFII//SOLID STATE IONICS//SOLID ELECTROLYTE | 21947 |
3422 | 2 | CAF2//EPITAXIAL AL2O3//METAL INSULATOR HETEROSTRUCTURE | 1570 |
13018 | 1 | CAF2//METAL INSULATOR HETEROSTRUCTURE//SOLID STATE OPT | 865 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | CAF2 | authKW | 454782 | 7% | 20% | 63 |
2 | METAL INSULATOR HETEROSTRUCTURE | authKW | 352995 | 1% | 100% | 10 |
3 | SOLID STATE OPT | address | 185695 | 1% | 48% | 11 |
4 | CDF2 | authKW | 153465 | 1% | 43% | 10 |
5 | SEMICOND DEVICES ELECT MAT | address | 114359 | 1% | 36% | 9 |
6 | CAF2 SI111 | authKW | 105899 | 0% | 100% | 3 |
7 | METAL INSULATOR SEMICONDUCTOR HETEROSTRUCTURE | authKW | 105899 | 0% | 100% | 3 |
8 | PARTIALLY IONIZED BEAM EPITAXY | authKW | 105899 | 0% | 100% | 3 |
9 | MNF2 | authKW | 97746 | 1% | 46% | 6 |
10 | CALCIUM DIFLUORIDE | authKW | 80681 | 0% | 57% | 4 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 8280 | 62% | 0% | 536 |
2 | Materials Science, Coatings & Films | 4533 | 17% | 0% | 145 |
3 | Physics, Condensed Matter | 3813 | 35% | 0% | 307 |
4 | Materials Science, Multidisciplinary | 522 | 20% | 0% | 172 |
5 | Crystallography | 444 | 7% | 0% | 58 |
6 | Chemistry, Physical | 184 | 13% | 0% | 110 |
7 | Engineering, Electrical & Electronic | 111 | 9% | 0% | 80 |
8 | Nanoscience & Nanotechnology | 94 | 5% | 0% | 39 |
9 | Physics, Multidisciplinary | 79 | 6% | 0% | 53 |
10 | Microscopy | 16 | 1% | 0% | 5 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLID STATE OPT | 185695 | 1% | 48% | 11 |
2 | SEMICOND DEVICES ELECT MAT | 114359 | 1% | 36% | 9 |
3 | ADV PL ELECT | 36762 | 1% | 21% | 5 |
4 | CEA CNRS GRP MICROSTRUCT SEMICOND 2 6 | 35300 | 0% | 100% | 1 |
5 | CS FIS MATEMAT B | 35300 | 0% | 100% | 1 |
6 | INTERDISCIPLINARY ENGN SCI ENGN | 35300 | 0% | 100% | 1 |
7 | LEHRSTUHL HALBLEITERTECHNOL E26 | 35300 | 0% | 100% | 1 |
8 | MACDIARMAID ADV MAT NANOTECHNOL | 35300 | 0% | 100% | 1 |
9 | MAT CHEN | 35300 | 0% | 100% | 1 |
10 | OT RAIOS X RUMENTAC | 35300 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 4426 | 5% | 0% | 39 |
2 | APPLIED SURFACE SCIENCE | 2761 | 6% | 0% | 53 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2508 | 4% | 0% | 32 |
4 | SURFACE SCIENCE | 2474 | 5% | 0% | 44 |
5 | THIN SOLID FILMS | 2180 | 6% | 0% | 48 |
6 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2153 | 5% | 0% | 44 |
7 | JOURNAL OF CRYSTAL GROWTH | 2041 | 5% | 0% | 43 |
8 | APPLIED PHYSICS LETTERS | 1909 | 9% | 0% | 79 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1505 | 3% | 0% | 27 |
10 | JOURNAL OF APPLIED PHYSICS | 1450 | 8% | 0% | 68 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | CAF2 | 454782 | 7% | 20% | 63 | Search CAF2 | Search CAF2 |
2 | METAL INSULATOR HETEROSTRUCTURE | 352995 | 1% | 100% | 10 | Search METAL+INSULATOR+HETEROSTRUCTURE | Search METAL+INSULATOR+HETEROSTRUCTURE |
3 | CDF2 | 153465 | 1% | 43% | 10 | Search CDF2 | Search CDF2 |
4 | CAF2 SI111 | 105899 | 0% | 100% | 3 | Search CAF2+SI111 | Search CAF2+SI111 |
5 | METAL INSULATOR SEMICONDUCTOR HETEROSTRUCTURE | 105899 | 0% | 100% | 3 | Search METAL+INSULATOR+SEMICONDUCTOR+HETEROSTRUCTURE | Search METAL+INSULATOR+SEMICONDUCTOR+HETEROSTRUCTURE |
6 | PARTIALLY IONIZED BEAM EPITAXY | 105899 | 0% | 100% | 3 | Search PARTIALLY+IONIZED+BEAM+EPITAXY | Search PARTIALLY+IONIZED+BEAM+EPITAXY |
7 | MNF2 | 97746 | 1% | 46% | 6 | Search MNF2 | Search MNF2 |
8 | CALCIUM DIFLUORIDE | 80681 | 0% | 57% | 4 | Search CALCIUM+DIFLUORIDE | Search CALCIUM+DIFLUORIDE |
9 | ROTATIONAL TWIN | 79422 | 0% | 75% | 3 | Search ROTATIONAL+TWIN | Search ROTATIONAL+TWIN |
10 | 2 STEP GROWTH METHOD | 70599 | 0% | 100% | 2 | Search 2+STEP+GROWTH+METHOD | Search 2+STEP+GROWTH+METHOD |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SUGIYAMA, M , OSHIMA, M , (1996) MBE GROWTH OF FLUORIDES.MICROELECTRONICS JOURNAL. VOL. 27. ISSUE 4-5. P. 361 -382 | 66 | 87% | 13 |
2 | SINHAROY, S , (1990) FLUORIDE SEMICONDUCTOR AND SEMICONDUCTOR FLUORIDE SEMICONDUCTOR HETEROEPITAXIAL STRUCTURE RESEARCH - A REVIEW.THIN SOLID FILMS. VOL. 187. ISSUE 2. P. 231-243 | 66 | 93% | 49 |
3 | DEITER, C , BIERKANDT, M , KLUST, A , KUMPF, C , SU, YX , BUNK, O , FEIDENHANS'L, R , WOLLSCHLAGER, J , (2010) STRUCTURAL TRANSITIONS AND RELAXATION PROCESSES DURING THE EPITAXIAL GROWTH OF ULTRATHIN CAF2 FILMS ON SI(111).PHYSICAL REVIEW B. VOL. 82. ISSUE 8. P. - | 37 | 74% | 8 |
4 | WOLLSCHLAGER, J , (2002) SUBSTRATE-STEP-INDUCED EFFECTS ON THE GROWTH OF CAF2 ON SI (111).APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 75. ISSUE 1. P. 155 -166 | 40 | 82% | 11 |
5 | WOLLSCHLAGER, J , DEITER, C , WANG, CR , MULLER, BH , HOFMANN, KR , (2011) SURFACTANT ENHANCED SOLID PHASE EPITAXY OF GE/CAF2/SI(111): SYNCHROTRON X-RAY CHARACTERIZATION OF STRUCTURE AND MORPHOLOGY.JOURNAL OF APPLIED PHYSICS. VOL. 110. ISSUE 10. P. - | 26 | 81% | 2 |
6 | KIM, H , DUVJIR, G , DUGERJAV, O , LI, H , MOTLAK, M , ARVISBAATAR, A , SEO, JM , (2012) SELF-LIMITED GROWTH OF THE CAF NANOWIRE ON THE SI(5512)-2 X 1 TEMPLATE.SURFACE SCIENCE. VOL. 606. ISSUE 19-20. P. 1512-1519 | 31 | 66% | 1 |
7 | WANG, CR , MULLER, BH , BUGIEL, E , HOFMANN, KR , (2004) TEMPERATURE-DEPENDENT GROWTH MECHANISMS OF CAF2 ON SI(111).JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 22. ISSUE 5. P. 2182-2187 | 25 | 96% | 1 |
8 | KAMETANI, K , SUDOH, K , IWASAKI, H , (2002) EPITAXIAL GROWTH OF CAF2 FILMS ON SI(111) STUDIED BY SCANNING TUNNELING MICROSCOPY.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 41. ISSUE 1. P. 250 -255 | 23 | 96% | 3 |
9 | SCHOWALTER, LJ , FATHAUER, RW , (1989) GROWTH AND CHARACTERIZATION OF SINGLE-CRYSTAL INSULATORS ON SILICON.CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 15. ISSUE 4. P. 367-421 | 42 | 74% | 97 |
10 | WANG, CR , MULLER, BH , HOFMANN, KR , (2002) EPITAXY OF ATOMICALLY FLAT CAF2 FILMS ON SI(111) SUBSTRATES.THIN SOLID FILMS. VOL. 410. ISSUE 1-2. P. 72 -75 | 20 | 100% | 18 |
Classes with closest relation at Level 1 |