Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
6958 | 1424 | 32.2 | 87% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
685 | 3 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 8241 |
1754 | 2 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 6467 |
6958 | 1 | ORGANIC MEMORY//ELECTRICAL BISTABILITY//ORGANIC MEMORY DEVICE | 1424 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ORGANIC MEMORY | authKW | 1167350 | 5% | 78% | 70 |
2 | ELECTRICAL BISTABILITY | authKW | 694704 | 3% | 90% | 36 |
3 | ORGANIC MEMORY DEVICE | authKW | 446694 | 2% | 83% | 25 |
4 | POLYMER MEMORY | authKW | 378225 | 1% | 84% | 21 |
5 | ORGANIC BISTABLE DEVICE | authKW | 322885 | 1% | 94% | 16 |
6 | MEMORY DEVICES | authKW | 241679 | 3% | 26% | 43 |
7 | CONDUCTANCE SWITCHING | authKW | 196025 | 1% | 57% | 16 |
8 | HLJ PROV S SENIOR EDUC ELECT ENGN | address | 192975 | 1% | 100% | 9 |
9 | ORGANIC RESISTIVE MEMORY | authKW | 173676 | 1% | 90% | 9 |
10 | WORM MEMORY | authKW | 131329 | 0% | 88% | 7 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 11784 | 58% | 0% | 824 |
2 | Materials Science, Multidisciplinary | 6994 | 49% | 0% | 699 |
3 | Nanoscience & Nanotechnology | 6367 | 23% | 0% | 328 |
4 | Physics, Condensed Matter | 1486 | 19% | 0% | 264 |
5 | Chemistry, Multidisciplinary | 1194 | 21% | 0% | 297 |
6 | Polymer Science | 662 | 9% | 0% | 131 |
7 | Chemistry, Physical | 529 | 16% | 0% | 222 |
8 | Materials Science, Coatings & Films | 124 | 3% | 0% | 37 |
9 | Engineering, Electrical & Electronic | 108 | 8% | 0% | 111 |
10 | Materials Science, Textiles | 12 | 0% | 0% | 6 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | HLJ PROV S SENIOR EDUC ELECT ENGN | 192975 | 1% | 100% | 9 |
2 | PROGRAM TERA BIT LEVEL NONVOLATILE MEMOR | 116735 | 0% | 78% | 7 |
3 | ELECT CONTROL SYST NANODEVICE | 110270 | 0% | 86% | 6 |
4 | MILLIMETER WAVE INNOVAT TECHNOL MINT | 108523 | 1% | 28% | 18 |
5 | OPTOELECT DISPLAY | 107607 | 1% | 31% | 16 |
6 | SNDL | 102483 | 1% | 34% | 14 |
7 | BK MOL SCI | 69547 | 2% | 14% | 23 |
8 | ADSORPT TECHNOL PETR CHEM IND WASTEWATE | 64325 | 0% | 100% | 3 |
9 | POLYMER SYNTHESIS PHYS | 48242 | 0% | 75% | 3 |
10 | CHINA PETR CHEM IND | 42883 | 0% | 100% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ORGANIC ELECTRONICS | 83541 | 9% | 3% | 123 |
2 | JOURNAL OF MATERIALS CHEMISTRY C | 9422 | 3% | 1% | 47 |
3 | APPLIED PHYSICS LETTERS | 7176 | 14% | 0% | 194 |
4 | ADVANCED MATERIALS | 4344 | 4% | 0% | 53 |
5 | ADVANCED ELECTRONIC MATERIALS | 3644 | 1% | 2% | 8 |
6 | ADVANCED FUNCTIONAL MATERIALS | 2668 | 2% | 0% | 30 |
7 | IEEE ELECTRON DEVICE LETTERS | 2540 | 2% | 0% | 33 |
8 | POLYMER CHEMISTRY | 2329 | 1% | 1% | 21 |
9 | NPG ASIA MATERIALS | 2286 | 0% | 2% | 6 |
10 | CURRENT APPLIED PHYSICS | 1590 | 1% | 0% | 18 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ORGANIC MEMORY | 1167350 | 5% | 78% | 70 | Search ORGANIC+MEMORY | Search ORGANIC+MEMORY |
2 | ELECTRICAL BISTABILITY | 694704 | 3% | 90% | 36 | Search ELECTRICAL+BISTABILITY | Search ELECTRICAL+BISTABILITY |
3 | ORGANIC MEMORY DEVICE | 446694 | 2% | 83% | 25 | Search ORGANIC+MEMORY+DEVICE | Search ORGANIC+MEMORY+DEVICE |
4 | POLYMER MEMORY | 378225 | 1% | 84% | 21 | Search POLYMER+MEMORY | Search POLYMER+MEMORY |
5 | ORGANIC BISTABLE DEVICE | 322885 | 1% | 94% | 16 | Search ORGANIC+BISTABLE+DEVICE | Search ORGANIC+BISTABLE+DEVICE |
6 | MEMORY DEVICES | 241679 | 3% | 26% | 43 | Search MEMORY+DEVICES | Search MEMORY+DEVICES |
7 | CONDUCTANCE SWITCHING | 196025 | 1% | 57% | 16 | Search CONDUCTANCE+SWITCHING | Search CONDUCTANCE+SWITCHING |
8 | ORGANIC RESISTIVE MEMORY | 173676 | 1% | 90% | 9 | Search ORGANIC+RESISTIVE+MEMORY | Search ORGANIC+RESISTIVE+MEMORY |
9 | WORM MEMORY | 131329 | 0% | 88% | 7 | Search WORM+MEMORY | Search WORM+MEMORY |
10 | ORGANIC BISTABLE MEMORY DEVICE | 128650 | 0% | 100% | 6 | Search ORGANIC+BISTABLE+MEMORY+DEVICE | Search ORGANIC+BISTABLE+MEMORY+DEVICE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | LIN, WP , LIU, SJ , GONG, T , ZHAO, Q , HUANG, W , (2014) POLYMER-BASED RESISTIVE MEMORY MATERIALS AND DEVICES.ADVANCED MATERIALS. VOL. 26. ISSUE 4. P. 570-606 | 130 | 94% | 110 |
2 | CHO, B , SONG, S , JI, Y , KIM, TW , LEE, T , (2011) ORGANIC RESISTIVE MEMORY DEVICES: PERFORMANCE ENHANCEMENT, INTEGRATION, AND ADVANCED ARCHITECTURES.ADVANCED FUNCTIONAL MATERIALS. VOL. 21. ISSUE 15. P. 2806 -2829 | 78 | 66% | 170 |
3 | YEN, HJ , LIOU, GS , (2016) SOLUTION-PROCESSABLE TRIARYLAMINE-BASED HIGH-PERFORMANCE POLYMERS FOR RESISTIVE SWITCHING MEMORY DEVICES.POLYMER JOURNAL. VOL. 48. ISSUE 2. P. 117 -138 | 66 | 75% | 6 |
4 | CHEN, Y , LIU, G , WANG, C , ZHANG, WB , LI, RW , WANG, LX , (2014) POLYMER MEMRISTOR FOR INFORMATION STORAGE AND NEUROMORPHIC APPLICATIONS.MATERIALS HORIZONS. VOL. 1. ISSUE 5. P. 489 -506 | 91 | 58% | 13 |
5 | LING, QD , LIAW, DJ , ZHU, CX , CHAN, DSH , KANG, ET , NEOH, KG , (2008) POLYMER ELECTRONIC MEMORIES: MATERIALS, DEVICES AND MECHANISMS.PROGRESS IN POLYMER SCIENCE. VOL. 33. ISSUE 10. P. 917 -978 | 97 | 35% | 537 |
6 | HAHM, SG , KO, YG , KWON, W , REE, M , (2013) PROGRAMMABLE DIGITAL POLYMER MEMORIES.CURRENT OPINION IN CHEMICAL ENGINEERING. VOL. 2. ISSUE 1. P. 79-87 | 61 | 90% | 6 |
7 | SCOTT, JC , BOZANO, LD , (2007) NONVOLATILE MEMORY ELEMENTS BASED ON ORGANIC MATERIALS.ADVANCED MATERIALS. VOL. 19. ISSUE 11. P. 1452 -1463 | 52 | 60% | 630 |
8 | KUROSAWA, T , HIGASHIHARA, T , UEDA, M , (2013) POLYIMIDE MEMORY: A PITHY GUIDELINE FOR FUTURE APPLICATIONS.POLYMER CHEMISTRY. VOL. 4. ISSUE 1. P. 16-30 | 39 | 95% | 69 |
9 | SHI, L , TIAN, GF , YE, HB , QI, SL , WU, DZ , (2014) VOLATILE STATIC RANDOM ACCESS MEMORY BEHAVIOR OF AN AROMATIC POLYIMIDE BEARING CARBAZOLE-TETHERED TRIPHENYLAMINE MOIETIES.POLYMER. VOL. 55. ISSUE 5. P. 1150-1159 | 48 | 91% | 15 |
10 | YE, FL , GU, PY , ZHOU, F , LIU, HF , XU, XP , LI, H , XU, QF , LU, JM , (2013) PREPARATION OF HOMOPOLYMERS FROM NEW AZOBENZENE ORGANIC MOLECULES WITH DIFFERENT TERMINAL GROUPS AND STUDY OF THEIR NONVOLATILE MEMORY EFFECTS.POLYMER. VOL. 54. ISSUE 13. P. 3324-3333 | 46 | 100% | 6 |
Classes with closest relation at Level 1 |