Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
3240 | 2031 | 18.6 | 74% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
10 | 4 | OPTICS//PHYSICS, PARTICLES & FIELDS//PHYSICS, MULTIDISCIPLINARY | 1131262 |
37 | 3 | PHYSICS, CONDENSED MATTER//PHYSICAL REVIEW B//QUANTUM DOTS | 103171 |
198 | 2 | COULOMB BLOCKADE//PHYSICAL REVIEW B//SINGLE ELECTRON TRANSISTOR | 21385 |
3240 | 1 | SINGLE ELECTRON TRANSISTOR//COULOMB BLOCKADE//SINGLE ELECTRON TRANSISTOR SET | 2031 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SINGLE ELECTRON TRANSISTOR | authKW | 1064378 | 8% | 45% | 159 |
2 | COULOMB BLOCKADE | authKW | 831855 | 10% | 28% | 196 |
3 | SINGLE ELECTRON TRANSISTOR SET | authKW | 707131 | 3% | 80% | 59 |
4 | SINGLE ELECTRON TUNNELING | authKW | 431334 | 4% | 36% | 80 |
5 | SINGLE ELECTRON | authKW | 417258 | 2% | 58% | 48 |
6 | SINGLE ELECTRON DEVICES | authKW | 376325 | 3% | 48% | 52 |
7 | SINGLE ELECTRON CIRCUIT | authKW | 258419 | 1% | 90% | 19 |
8 | ORTHODOX THEORY | authKW | 210460 | 1% | 100% | 14 |
9 | HITACHI CAMBRIDGE | address | 158872 | 2% | 26% | 41 |
10 | SILICON SINGLE ELECTRON TRANSISTOR | authKW | 151580 | 1% | 92% | 11 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 15369 | 55% | 0% | 1127 |
2 | Nanoscience & Nanotechnology | 4797 | 17% | 0% | 346 |
3 | Physics, Condensed Matter | 3660 | 24% | 0% | 479 |
4 | Engineering, Electrical & Electronic | 3385 | 25% | 0% | 517 |
5 | Physics, Multidisciplinary | 1241 | 13% | 0% | 260 |
6 | Materials Science, Multidisciplinary | 173 | 10% | 0% | 204 |
7 | Instruments & Instrumentation | 121 | 3% | 0% | 67 |
8 | Optics | 87 | 4% | 0% | 86 |
9 | Computer Science, Hardware & Architecture | 44 | 1% | 0% | 23 |
10 | Microscopy | 9 | 0% | 0% | 7 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | HITACHI CAMBRIDGE | 158872 | 2% | 26% | 41 |
2 | MANIPUR TECHNOL | 105230 | 0% | 100% | 7 |
3 | QUANTUM INFORMAT PROC SYST | 82955 | 1% | 18% | 30 |
4 | BIOENVIRONM INFORMAT TECHNOL | 62635 | 0% | 83% | 5 |
5 | CRYOELE | 60123 | 0% | 50% | 8 |
6 | UR 03 13 04 | 48104 | 0% | 80% | 4 |
7 | EEMT | 45099 | 0% | 100% | 3 |
8 | UR 99 13 22 | 40085 | 0% | 67% | 4 |
9 | PHYS NANOSCI TECHNOL | 33822 | 0% | 75% | 3 |
10 | NTT BASIC S | 31789 | 3% | 4% | 56 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 22710 | 3% | 3% | 52 |
2 | MICROELECTRONIC ENGINEERING | 9616 | 4% | 1% | 81 |
3 | APPLIED PHYSICS LETTERS | 9512 | 13% | 0% | 267 |
4 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 7333 | 6% | 0% | 124 |
5 | MICROELECTRONICS JOURNAL | 4747 | 2% | 1% | 35 |
6 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 3052 | 3% | 0% | 59 |
7 | JOURNAL OF APPLIED PHYSICS | 2702 | 7% | 0% | 143 |
8 | IEICE TRANSACTIONS ON ELECTRONICS | 2060 | 1% | 0% | 29 |
9 | SUPERLATTICES AND MICROSTRUCTURES | 1940 | 1% | 0% | 29 |
10 | PHYSICAL REVIEW B | 1699 | 7% | 0% | 145 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SINGLE ELECTRON TRANSISTOR | 1064378 | 8% | 45% | 159 | Search SINGLE+ELECTRON+TRANSISTOR | Search SINGLE+ELECTRON+TRANSISTOR |
2 | COULOMB BLOCKADE | 831855 | 10% | 28% | 196 | Search COULOMB+BLOCKADE | Search COULOMB+BLOCKADE |
3 | SINGLE ELECTRON TRANSISTOR SET | 707131 | 3% | 80% | 59 | Search SINGLE+ELECTRON+TRANSISTOR+SET | Search SINGLE+ELECTRON+TRANSISTOR+SET |
4 | SINGLE ELECTRON TUNNELING | 431334 | 4% | 36% | 80 | Search SINGLE+ELECTRON+TUNNELING | Search SINGLE+ELECTRON+TUNNELING |
5 | SINGLE ELECTRON | 417258 | 2% | 58% | 48 | Search SINGLE+ELECTRON | Search SINGLE+ELECTRON |
6 | SINGLE ELECTRON DEVICES | 376325 | 3% | 48% | 52 | Search SINGLE+ELECTRON+DEVICES | Search SINGLE+ELECTRON+DEVICES |
7 | SINGLE ELECTRON CIRCUIT | 258419 | 1% | 90% | 19 | Search SINGLE+ELECTRON+CIRCUIT | Search SINGLE+ELECTRON+CIRCUIT |
8 | ORTHODOX THEORY | 210460 | 1% | 100% | 14 | Search ORTHODOX+THEORY | Search ORTHODOX+THEORY |
9 | SILICON SINGLE ELECTRON TRANSISTOR | 151580 | 1% | 92% | 11 | Search SILICON+SINGLE+ELECTRON+TRANSISTOR | Search SILICON+SINGLE+ELECTRON+TRANSISTOR |
10 | COULOMB OSCILLATION | 144287 | 1% | 40% | 24 | Search COULOMB+OSCILLATION | Search COULOMB+OSCILLATION |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ONO, Y , FUJIWARA, A , NISHIGUCHI, K , INOKAWA, H , TAKAHASHI, Y , (2005) MANIPULATION AND DETECTION OF SINGLE ELECTRONS FOR FUTURE INFORMATION PROCESSING.JOURNAL OF APPLIED PHYSICS. VOL. 97. ISSUE 3. P. - | 125 | 73% | 72 |
2 | TAKAHASHI, Y , ONO, Y , FUJIWARA, A , INOKAWA, H , (2002) SILICON SINGLE-ELECTRON DEVICES.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 14. ISSUE 39. P. R995 -R1033 | 111 | 79% | 71 |
3 | LIKHAREV, KK , (1999) SINGLE-ELECTRON DEVICES AND THEIR APPLICATIONS.PROCEEDINGS OF THE IEEE. VOL. 87. ISSUE 4. P. 606 -632 | 79 | 46% | 902 |
4 | PEKOLA, JP , SAIRA, OP , MAISI, VF , KEMPPINEN, A , MOTTONEN, M , PASHKIN, YA , AVERIN, DV , (2013) SINGLE-ELECTRON CURRENT SOURCES: TOWARD A REFINED DEFINITION OF THE AMPERE.REVIEWS OF MODERN PHYSICS. VOL. 85. ISSUE 4. P. 1421 -1472 | 106 | 31% | 79 |
5 | TANTTU, T , ROSSI, A , TAN, KY , MAKINEN, A , CHAN, KW , DZURAK, AS , MOTTONEN, M , (2016) THREE-WAVEFORM BIDIRECTIONAL PUMPING OF SINGLE ELECTRONS WITH A SILICON QUANTUM DOT.SCIENTIFIC REPORTS. VOL. 6. ISSUE . P. - | 45 | 87% | 0 |
6 | TANAHASHI, Y , SUZUKI, R , SARAYA, T , HIRAMOTO, T , (2014) PEAK POSITION CONTROL OF COULOMB BLOCKADE OSCILLATIONS IN SILICON SINGLE-ELECTRON TRANSISTORS WITH FLOATING GATE OPERATING AT ROOM TEMPERATURE.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 4. P. - | 42 | 88% | 2 |
7 | YAMAHATA, G , GIBLIN, SP , KATAOKA, M , KARASAWA, T , FUJIWARA, A , (2016) GIGAHERTZ SINGLE-ELECTRON PUMPING IN SILICON WITH AN ACCURACY BETTER THAN 9.2 PARTS IN 10(7).APPLIED PHYSICS LETTERS. VOL. 109. ISSUE 1. P. - | 37 | 79% | 1 |
8 | TANTTU, T , ROSSI, A , TAN, KY , HUHTINEN, KE , CHAN, KW , MOTTONEN, M , DZURAK, AS , (2015) ELECTRON COUNTING IN A SILICON SINGLE-ELECTRON PUMP.NEW JOURNAL OF PHYSICS. VOL. 17. ISSUE . P. - | 34 | 89% | 2 |
9 | KAESTNER, B , KASHCHEYEVS, V , (2015) NON-ADIABATIC QUANTIZED CHARGE PUMPING WITH TUNABLE-BARRIER QUANTUM DOTS: A REVIEW OF CURRENT PROGRESS.REPORTS ON PROGRESS IN PHYSICS. VOL. 78. ISSUE 10. P. - | 62 | 38% | 15 |
10 | ZARDALIDIS, GT , KARAFYLLIDIS, I , (2007) DESIGN AND SIMULATION OF A NANOELECTRONIC SINGLE ELECTRON 2-4 DECODER USING A NOVEL SIMULATOR.MICROELECTRONICS JOURNAL. VOL. 38. ISSUE 3. P. 381 -387 | 34 | 100% | 12 |
Classes with closest relation at Level 1 |