Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
6648 | 1460 | 19.6 | 57% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
579 | 2 | IEEE TRANSACTIONS ON ELECTRON DEVICES//SOLID-STATE ELECTRONICS//ENGINEERING, ELECTRICAL & ELECTRONIC | 14235 |
6648 | 1 | AVALANCHE PHOTODIODE//EXCESS NOISE FACTOR//IMPACT IONIZATION | 1460 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | AVALANCHE PHOTODIODE | authKW | 595711 | 9% | 22% | 129 |
2 | EXCESS NOISE FACTOR | authKW | 447667 | 2% | 63% | 34 |
3 | IMPACT IONIZATION | authKW | 388057 | 6% | 20% | 94 |
4 | AVALANCHE PHOTODIODES APDS | authKW | 257796 | 2% | 41% | 30 |
5 | AVALANCHE PHOTODIODE APD | authKW | 239315 | 2% | 34% | 34 |
6 | MULTIPLICATION GAIN | authKW | 190116 | 1% | 91% | 10 |
7 | DEAD SPACE EFFECT | authKW | 169393 | 1% | 90% | 9 |
8 | AVALANCHE MULTIPLICATION | authKW | 137306 | 2% | 24% | 27 |
9 | IONIZATION COEFFICIENT | authKW | 131366 | 1% | 37% | 17 |
10 | EXCESS NOISE | authKW | 101105 | 1% | 27% | 18 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Engineering, Electrical & Electronic | 11237 | 51% | 0% | 748 |
2 | Physics, Applied | 10497 | 54% | 0% | 791 |
3 | Optics | 4400 | 24% | 0% | 345 |
4 | Physics, Condensed Matter | 1197 | 17% | 0% | 244 |
5 | Telecommunications | 1053 | 8% | 0% | 112 |
6 | Physics, Multidisciplinary | 91 | 5% | 0% | 79 |
7 | Materials Science, Multidisciplinary | 86 | 9% | 0% | 132 |
8 | COMPUTER APPLICATIONS & CYBERNETICS | 28 | 0% | 0% | 2 |
9 | Nanoscience & Nanotechnology | 11 | 2% | 0% | 29 |
10 | Crystallography | 7 | 1% | 0% | 19 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | FDN STUDIES EXTENS EDUC | 65349 | 0% | 63% | 5 |
2 | C4ISR GRP | 41826 | 0% | 100% | 2 |
3 | GRP C4ISR | 41826 | 0% | 100% | 2 |
4 | CORP ND | 27883 | 0% | 67% | 2 |
5 | ADV DEVICES TECHNOL | 20913 | 0% | 100% | 1 |
6 | ADV PHOTON DEVICE GRP | 20913 | 0% | 100% | 1 |
7 | COMP ENGN CRL 226 | 20913 | 0% | 100% | 1 |
8 | CORP SOLID STATE | 20913 | 0% | 100% | 1 |
9 | ELECT ENGN OPTELECT TECHNOL | 20913 | 0% | 100% | 1 |
10 | ELECT MICROOPTOLE ON MONTPELLIER | 20913 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 19070 | 8% | 1% | 118 |
2 | IEEE JOURNAL OF QUANTUM ELECTRONICS | 16049 | 6% | 1% | 81 |
3 | IEE PROCEEDINGS-J OPTOELECTRONICS | 7431 | 1% | 3% | 13 |
4 | ELECTRONICS LETTERS | 6113 | 7% | 0% | 108 |
5 | IEEE PHOTONICS TECHNOLOGY LETTERS | 6065 | 5% | 0% | 69 |
6 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 5736 | 3% | 1% | 47 |
7 | JOURNAL OF LIGHTWAVE TECHNOLOGY | 5401 | 4% | 0% | 56 |
8 | SOLID-STATE ELECTRONICS | 5235 | 3% | 1% | 50 |
9 | ELECTRON DEVICE LETTERS | 4431 | 1% | 3% | 8 |
10 | JOURNAL OF APPLIED PHYSICS | 4210 | 10% | 0% | 149 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | AVALANCHE PHOTODIODE | 595711 | 9% | 22% | 129 | Search AVALANCHE+PHOTODIODE | Search AVALANCHE+PHOTODIODE |
2 | EXCESS NOISE FACTOR | 447667 | 2% | 63% | 34 | Search EXCESS+NOISE+FACTOR | Search EXCESS+NOISE+FACTOR |
3 | IMPACT IONIZATION | 388057 | 6% | 20% | 94 | Search IMPACT+IONIZATION | Search IMPACT+IONIZATION |
4 | AVALANCHE PHOTODIODES APDS | 257796 | 2% | 41% | 30 | Search AVALANCHE+PHOTODIODES+APDS | Search AVALANCHE+PHOTODIODES+APDS |
5 | AVALANCHE PHOTODIODE APD | 239315 | 2% | 34% | 34 | Search AVALANCHE+PHOTODIODE+APD | Search AVALANCHE+PHOTODIODE+APD |
6 | MULTIPLICATION GAIN | 190116 | 1% | 91% | 10 | Search MULTIPLICATION+GAIN | Search MULTIPLICATION+GAIN |
7 | DEAD SPACE EFFECT | 169393 | 1% | 90% | 9 | Search DEAD+SPACE+EFFECT | Search DEAD+SPACE+EFFECT |
8 | AVALANCHE MULTIPLICATION | 137306 | 2% | 24% | 27 | Search AVALANCHE+MULTIPLICATION | Search AVALANCHE+MULTIPLICATION |
9 | IONIZATION COEFFICIENT | 131366 | 1% | 37% | 17 | Search IONIZATION+COEFFICIENT | Search IONIZATION+COEFFICIENT |
10 | EXCESS NOISE | 101105 | 1% | 27% | 18 | Search EXCESS+NOISE | Search EXCESS+NOISE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | BRENNAN, KF , HARALSON, J , (2000) INVITED REVIEW - SUPERLATTICE AND MULTIQUANTUM WELL AVALANCHE PHOTODETECTORS: PHYSICS, CONCEPTS AND PERFORMANCE.SUPERLATTICES AND MICROSTRUCTURES. VOL. 28. ISSUE 2. P. 77 -104 | 104 | 95% | 8 |
2 | CAMPBELL, JC , (2007) RECENT ADVANCES IN TELECOMMUNICATIONS AVALANCHE PHOTODIODES.JOURNAL OF LIGHTWAVE TECHNOLOGY. VOL. 25. ISSUE 1. P. 109 -121 | 74 | 86% | 83 |
3 | CAMPBELL, JC , (2016) RECENT ADVANCES IN AVALANCHE PHOTODIODES.JOURNAL OF LIGHTWAVE TECHNOLOGY. VOL. 34. ISSUE 2. P. 278 -285 | 55 | 83% | 3 |
4 | REES, GJ , DAVID, JPR , (2010) NONLOCAL IMPACT IONIZATION AND AVALANCHE MULTIPLICATION.JOURNAL OF PHYSICS D-APPLIED PHYSICS. VOL. 43. ISSUE 24. P. - | 62 | 94% | 4 |
5 | WILLIAMS, GM , COMPTON, M , RAMIREZ, DA , HAYAT, MM , HUNTINGTON, AS , (2013) MULTI-GAIN-STAGE INGAAS AVALANCHE PHOTODIODE WITH ENHANCED GAIN AND REDUCED EXCESS NOISE.IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. VOL. 1. ISSUE 2. P. 54 -65 | 31 | 100% | 7 |
6 | MA, CLF , DEEN, MJ , TAROF, LE , (1998) CHARACTERIZATION AND MODELING OF SAGCM INP/INGAAS AVALANCHE PHOTODIODES FOR MULTIGIGABIT OPTICAL FIBER COMMUNICATIONS.ADVANCES IN IMAGING AND ELECTRON PHYSICS, VOL 99. VOL. 99. ISSUE . P. 65 -170 | 57 | 85% | 8 |
7 | DAVID, JPR , TAN, CH , (2008) MATERIAL CONSIDERATIONS FOR AVALANCHE PHOTODIODES (INVITED PAPER).IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 14. ISSUE 4. P. 998 -1009 | 46 | 69% | 12 |
8 | GROVES, C , CHIA, CK , TOZER, RC , DAVID, JPR , REES, GJ , (2005) AVALANCHE NOISE CHARACTERISTICS OF SINGLE ALXGA1-XAS(0.3 < X < 0.6)-GAAS HETEROJUNCTION APDS.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 41. ISSUE 1. P. 70-75 | 33 | 100% | 14 |
9 | CHEONG, JS , HAYAT, MM , ZHOU, XX , DAVID, JPR , (2015) RELATING THE EXPERIMENTAL IONIZATION COEFFICIENTS IN SEMICONDUCTORS TO THE NONLOCAL IONIZATION COEFFICIENTS.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 62. ISSUE 6. P. 1946 -1952 | 27 | 93% | 2 |
10 | HAYAT, MM , KWON, OH , PAN, Y , SOTIRELIS, P , CAMPBELL, JC , SALEH, BEA , TEICH, MC , (2002) GAIN-BANDWIDTH CHARACTERISTICS OF THIN AVALANCHE PHOTODIODES.IEEE TRANSACTIONS ON ELECTRON DEVICES. VOL. 49. ISSUE 5. P. 770 -781 | 35 | 97% | 26 |
Classes with closest relation at Level 1 |