Class information for:
Level 1: ALXGA1 XP//VAPOR PRESSURE CONTROL//SURFACE AND INTERFACE PHENOMENA

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
34087 116 13.1 36%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
47 3       PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER 93961
3783 2             LIQUID PHASE EPITAXY//MICROCHANNEL EPITAXY//ELECTROEPITAXY 978
34087 1                   ALXGA1 XP//VAPOR PRESSURE CONTROL//SURFACE AND INTERFACE PHENOMENA 116

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 ALXGA1 XP authKW 526476 2% 100% 2
2 VAPOR PRESSURE CONTROL authKW 526476 2% 100% 2
3 SURFACE AND INTERFACE PHENOMENA authKW 350983 2% 67% 2
4 TELECOMMUN ADVANCEMENTS ORG address 350983 2% 67% 2
5 SENDAI address 318227 8% 13% 9
6 CRYSTAL MORPHOLOGIES authKW 263238 1% 100% 1
7 DEFECT FREE NUCLEATION authKW 263238 1% 100% 1
8 GAP ALXGA1 XP authKW 263238 1% 100% 1
9 GAPAS authKW 263238 1% 100% 1
10 GRAIN BOUNDARY CHARGE TRANSPORTATION authKW 263238 1% 100% 1

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 Physics, Applied 782 53% 0% 61
2 Physics, Condensed Matter 360 30% 0% 35
3 Engineering, Electrical & Electronic 200 26% 0% 30
4 Telecommunications 160 10% 0% 12
5 Optics 157 16% 0% 19
6 Materials Science, Multidisciplinary 123 25% 0% 29
7 Crystallography 104 9% 0% 10
8 Materials Science, Coatings & Films 33 4% 0% 5
9 Physics, Multidisciplinary 20 8% 0% 9
10 Instruments & Instrumentation 8 3% 0% 4

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 TELECOMMUN ADVANCEMENTS ORG 350983 2% 67% 2
2 SENDAI 318227 8% 13% 9
3 LASHKAR SEMICOND PHYS 263238 1% 100% 1
4 AOBA YAMA 02 131618 1% 50% 1
5 KAWAUCHI AOBA KU 131618 1% 50% 1
6 TSURUOKA 131618 1% 50% 1
7 CONTROL INFORMAT SYST ENGN 65804 3% 8% 3
8 SEMICOND FDN 52646 1% 20% 1
9 TELECOMMUN ADVANCEMENT ORG 26322 1% 10% 1
10 LASHKARYOV SEMICOND PHYS 16678 3% 2% 3

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 IEE PROCEEDINGS-J OPTOELECTRONICS 13874 4% 1% 5
2 JOURNAL OF CRYSTAL AND MOLECULAR STRUCTURE 8224 1% 3% 1
3 SOVIET PHYSICS SEMICONDUCTORS-USSR 7975 11% 0% 13
4 IEE PROCEEDINGS-OPTOELECTRONICS 7957 4% 1% 5
5 MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 5114 7% 0% 8
6 SEMICONDUCTORS 2494 7% 0% 8
7 JOURNAL OF ELECTRONIC MATERIALS 1321 6% 0% 7
8 MATERIALS SCIENCE & ENGINEERING R-REPORTS 834 1% 0% 1
9 UKRAINSKII FIZICHESKII ZHURNAL 716 3% 0% 3
10 JOURNAL OF CRYSTAL GROWTH 677 8% 0% 9

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 ALXGA1 XP 526476 2% 100% 2 Search ALXGA1+XP Search ALXGA1+XP
2 VAPOR PRESSURE CONTROL 526476 2% 100% 2 Search VAPOR+PRESSURE+CONTROL Search VAPOR+PRESSURE+CONTROL
3 SURFACE AND INTERFACE PHENOMENA 350983 2% 67% 2 Search SURFACE+AND+INTERFACE+PHENOMENA Search SURFACE+AND+INTERFACE+PHENOMENA
4 CRYSTAL MORPHOLOGIES 263238 1% 100% 1 Search CRYSTAL+MORPHOLOGIES Search CRYSTAL+MORPHOLOGIES
5 DEFECT FREE NUCLEATION 263238 1% 100% 1 Search DEFECT+FREE+NUCLEATION Search DEFECT+FREE+NUCLEATION
6 GAP ALXGA1 XP 263238 1% 100% 1 Search GAP+ALXGA1+XP Search GAP+ALXGA1+XP
7 GAPAS 263238 1% 100% 1 Search GAPAS Search GAPAS
8 GRAIN BOUNDARY CHARGE TRANSPORTATION 263238 1% 100% 1 Search GRAIN+BOUNDARY+CHARGE+TRANSPORTATION Search GRAIN+BOUNDARY+CHARGE+TRANSPORTATION
9 HIGHLY BI DOPED PBTE 263238 1% 100% 1 Search HIGHLY+BI+DOPED+PBTE Search HIGHLY+BI+DOPED+PBTE
10 HYPOTHETICAL BOUNDARY 263238 1% 100% 1 Search HYPOTHETICAL+BOUNDARY Search HYPOTHETICAL+BOUNDARY

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref.
in cl.		 Shr. of ref. in
cl.		 Citations
1 SAITO, T , SUTO, K , NISHIZAWA, J , KAWASAKI, M , (2001) SPONTANEOUS RAMAN SCATTERING IN [100], [110], AND [11-2] DIRECTIONAL GAP WAVEGUIDES.JOURNAL OF APPLIED PHYSICS. VOL. 90. ISSUE 4. P. 1831-1835 8 100% 10
2 YASUDA, A , SUTO, K , NISHIZAWA, J , (2014) LASING PROPERTIES OF PBSNTE/PBTE DOUBLE HETERO MID-INFRARED LASER DIODES GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR PRESSURE LIQUID-PHASE EPITAXY.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 27. ISSUE . P. 159 -162 6 86% 5
3 YASUDA, A , SASAKI, T , SUTO, K , NISHIZAWA, J , (2015) MID-INFRARED TRANSMISSION IMAGING AND SPECTROSCOPY WITH PBSNTE LASER DIODES GROWN WITH STOICHIOMETRY-CONTROLLED LIQUID-PHASE EPITAXY.INFRARED PHYSICS & TECHNOLOGY. VOL. 72. ISSUE . P. 249 -253 8 57% 0
4 TANNO, T , SUTO, K , OYAMA, Y , NISHIZAWA, JI , (2003) NONSTOICHIOMETRIC DEEP LEVELS IN MG-DOPED GAP EPITAXIAL LAYERS: EFFECTS OF PRE-ANNEALING OF SUBSTRATES.JOURNAL OF ELECTRONIC MATERIALS. VOL. 32. ISSUE 3. P. 172-175 6 100% 0
5 OYAMA, Y , TANABE, T , KATO, Y , NISHIZAWA, JI , SASAKI, T , (2008) PBSNTE DOUBLE-HETERO JUNCTION LASER DIODE AND ITS APPLICATION TO MID-INFRARED SPECTROSCOPIC IMAGING.JOURNAL OF CRYSTAL GROWTH. VOL. 310. ISSUE 7-9. P. 1917-1922 5 100% 2
6 YASUDA, A , SUTO, K , TAKAHASHI, Y , NISHIZAWA, J , (2014) MID-INFRARED PHOTOCONDUCTIVE PROPERTIES OF HEAVILY BI-DOPED PBTE P-N HOMOJUNCTION DIODE GROWN BY LIQUID-PHASE EPITAXY.INFRARED PHYSICS & TECHNOLOGY. VOL. 67. ISSUE . P. 609 -612 5 83% 2
7 SAITO, T , SUTO, K , KIMURA, T , WATANABE, A , NISHIZAWA, J , (2000) RAMAN GAIN AND OPTICAL LOSS IN GAP-ALGAP WAVEGUIDES.JOURNAL OF APPLIED PHYSICS. VOL. 87. ISSUE 7. P. 3399-3403 6 100% 7
8 TANNO, T , SUTO, K , OYAMA, Y , NISHIZAWA, J , (2003) NONSTOICHIOMETRIC DEEP LEVELS IN MG-DOPED GAP EPITAXIAL LAYERS.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 6. ISSUE 5-6. P. 437-440 5 100% 0
9 SUTO, K , SAITO, T , KIMURA, T , NISHIZAWA, JI , TANABE, T , (2002) SEMICONDUCTOR RAMAN AMPLIFIER FOR TERAHERTZ BANDWIDTH OPTICAL COMMUNICATION.JOURNAL OF LIGHTWAVE TECHNOLOGY. VOL. 20. ISSUE 4. P. 705-711 8 62% 12
10 SUTO, K , ADACHI, S , YONEYAMA, T , NISHIZAWA, J , (1996) FREE EXCITON RECOMBINATION IN GAP AND GAP/ALXGA1-XP LAYERS GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR PRESSURE.JOURNAL OF CRYSTAL GROWTH. VOL. 160. ISSUE 1-2. P. 13-20 7 88% 1

Classes with closest relation at Level 1


Rank Class id link
1 14673 MICROCHANNEL EPITAXY//ELECTROEPITAXY//LIQUID PHASE ELECTROEPITAXY
2 5151 TERAHERTZ WAVE//TERAHERTZ GENERATION//OPTICAL RECTIFICATION
3 13364 GAP N//ALGAINP STQW LASER//CENTROTECH
4 10462 ULTRAVIOLET DETECTORS//PHOTODETECTORS//METAL SEMICONDUCTOR METAL MSM
5 28684 TRANSISTOR LASER//TRANSISTOR LASER TL//0 D QUANTUM WELLS
6 7613 PLASMA DISPERSION EFFECT//SILICON WAVEGUIDE//SILICON OPTOELECTRONICS
7 30088 THERMOGRADIENT EFFECT//HETERO EPITAXIAL STRUCTURE//NANO HILLS
8 29635 SOVIET PHYSICS SEMICONDUCTORS-USSR//AIII B V//AMORPHOUS SILICON GERMANIUM MOBILITY GAP PROFILE
9 35106 LEAD SELENITE//ARMAMENT DEV ENGN COMMAND//ATTN RDAR MEF A
10 14548 SEMI INSULATING//SEMI INSULATING INP//MAT COMPONENTS S

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