Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
36212 | 84 | 15.6 | 20% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
4045 | 2 | MIAB WELDING//SOVIET PHYSICS SEMICONDUCTORS-USSR//STARODUBTSEV PHYSICOTECH | 637 |
36212 | 1 | SCI PROD ASSOC PHYS SUN//STARODUBTSEV PHYSICOTECH//PHYS SUN PROD ASSOC | 84 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SCI PROD ASSOC PHYS SUN | address | 830899 | 5% | 57% | 4 |
2 | STARODUBTSEV PHYSICOTECH | address | 545277 | 4% | 50% | 3 |
3 | PHYS SUN PROD ASSOC | address | 484688 | 5% | 33% | 4 |
4 | 5 METHOXYPSORALEN DETERMINATION | authKW | 363520 | 1% | 100% | 1 |
5 | BARRIER THERMO EMF | authKW | 363520 | 1% | 100% | 1 |
6 | GE 21 XZNSEX | authKW | 363520 | 1% | 100% | 1 |
7 | GROWTH SEMICOND MAT | address | 363520 | 1% | 100% | 1 |
8 | PHOTOACTIVE OXIDE | authKW | 363520 | 1% | 100% | 1 |
9 | PHYS SUN SCI PROD UNION | address | 363520 | 1% | 100% | 1 |
10 | PHYSICOTECN | address | 363520 | 1% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 1505 | 69% | 0% | 58 |
2 | Telecommunications | 52 | 7% | 0% | 6 |
3 | Physics, Applied | 27 | 14% | 0% | 12 |
4 | Engineering, Electrical & Electronic | 22 | 12% | 0% | 10 |
5 | Optics | 2 | 4% | 0% | 3 |
6 | Materials Science, Multidisciplinary | 2 | 7% | 0% | 6 |
7 | Materials Science, Coatings & Films | 1 | 1% | 0% | 1 |
8 | Dermatology | 1 | 1% | 0% | 1 |
9 | Physics, Multidisciplinary | 0 | 2% | 0% | 2 |
10 | Instruments & Instrumentation | 0 | 1% | 0% | 1 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SCI PROD ASSOC PHYS SUN | 830899 | 5% | 57% | 4 |
2 | STARODUBTSEV PHYSICOTECH | 545277 | 4% | 50% | 3 |
3 | PHYS SUN PROD ASSOC | 484688 | 5% | 33% | 4 |
4 | GROWTH SEMICOND MAT | 363520 | 1% | 100% | 1 |
5 | PHYS SUN SCI PROD UNION | 363520 | 1% | 100% | 1 |
6 | PHYSICOTECN | 363520 | 1% | 100% | 1 |
7 | PROD ASSOC SUN PHYS | 363520 | 1% | 100% | 1 |
8 | STARODUBTSEV PHYS TECH | 90878 | 1% | 25% | 1 |
9 | SUR ES INTER ES MAT AVANCES | 60585 | 1% | 17% | 1 |
10 | PHYSICOTECH | 45420 | 12% | 1% | 10 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOVIET PHYSICS SEMICONDUCTORS-USSR | 58783 | 36% | 1% | 30 |
2 | SEMICONDUCTORS | 15621 | 20% | 0% | 17 |
3 | RADIOTEKHNIKA I ELEKTRONIKA | 3005 | 7% | 0% | 6 |
4 | ELECTRONIC ENGINEERING | 2691 | 1% | 1% | 1 |
5 | PHYSICS OF THE SOLID STATE | 2180 | 8% | 0% | 7 |
6 | INFRARED PHYSICS | 1408 | 2% | 0% | 2 |
7 | TECHNICAL PHYSICS LETTERS | 1401 | 6% | 0% | 5 |
8 | SOVIET MICROELECTRONICS | 1214 | 1% | 0% | 1 |
9 | PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 635 | 1% | 0% | 1 |
10 | RUSSIAN PHYSICS JOURNAL | 228 | 1% | 0% | 1 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | 5 METHOXYPSORALEN DETERMINATION | 363520 | 1% | 100% | 1 | Search 5+METHOXYPSORALEN+DETERMINATION | Search 5+METHOXYPSORALEN+DETERMINATION |
2 | BARRIER THERMO EMF | 363520 | 1% | 100% | 1 | Search BARRIER+THERMO+EMF | Search BARRIER+THERMO+EMF |
3 | GE 21 XZNSEX | 363520 | 1% | 100% | 1 | Search GE+21+XZNSEX | Search GE+21+XZNSEX |
4 | PHOTOACTIVE OXIDE | 363520 | 1% | 100% | 1 | Search PHOTOACTIVE+OXIDE | Search PHOTOACTIVE+OXIDE |
5 | SOLUTION MELT | 363520 | 1% | 100% | 1 | Search SOLUTION+MELT | Search SOLUTION+MELT |
6 | THERMO ELEMENT | 181759 | 1% | 50% | 1 | Search THERMO+ELEMENT | Search THERMO+ELEMENT |
7 | TY | 25964 | 1% | 7% | 1 | Search TY | Search TY |
8 | LQ | 20194 | 1% | 6% | 1 | Search LQ | Search LQ |
9 | 73 | 9319 | 1% | 3% | 1 | Search 73 | Search 73 |
10 | INTERNAL FIELD | 7571 | 1% | 2% | 1 | Search INTERNAL+FIELD | Search INTERNAL+FIELD |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | MIRSAGATOV, SA , SAPAEV, IB , (2015) MECHANISM OF CHARGE TRANSFER IN INJECTION PHOTODETECTORS BASED ON THE M(IN)-N-CDS-P-SI-M(IN) STRUCTURE.PHYSICS OF THE SOLID STATE. VOL. 57. ISSUE 4. P. 659 -674 | 6 | 100% | 0 |
2 | VIKULIN, IM , KURMASHEV, SD , STAFEEV, VI , (2008) INJECTION-BASED PHOTODETECTORS.SEMICONDUCTORS. VOL. 42. ISSUE 1. P. 112 -127 | 8 | 80% | 8 |
3 | MIRSAGATOV, SA , LEIDERMAN, AY , ATABOEV, OK , (2013) MECHANISM OF CHARGE TRANSFER IN INJECTION PHOTODIODES BASED ON THE IN-N (+)-CDS-N-CDS (X) TE1-X -P-ZN (X) CD1-X TE-MO STRUCTURE.PHYSICS OF THE SOLID STATE. VOL. 55. ISSUE 8. P. 1635-1646 | 6 | 86% | 0 |
4 | MIRSAGATOV, SA , SAPAYEV, IB , (2014) INJECTION PHOTODIODE BASED ON A P-SI-N-CDS-N(+)-CDS STRUCTURE.SEMICONDUCTORS. VOL. 48. ISSUE 10. P. 1363 -1369 | 5 | 100% | 0 |
5 | USMONOV, SN , SAIDOV, AS , LEIDERMAN, AY , (2014) EFFECT OF INJECTION DEPLETION IN P-N HETEROSTRUCTURES BASED ON SOLID SOLUTIONS(SI-2)(1-X-Y)(GE-2)(X)(GAAS)(Y),(SI-2)(1-X)(CDS)(X), (INSB)(1-X)(SN-2)(X),AND CDTE1-XSX.PHYSICS OF THE SOLID STATE. VOL. 56. ISSUE 12. P. 2401 -2407 | 5 | 83% | 0 |
6 | MIRSAGATOV, SA , KABULOV, RR , MAKHMUDOV, MA , (2013) INJECTION PHOTODIODE BASED ON AN N-CDS/P-CDTE HETEROSTRUCTURE.SEMICONDUCTORS. VOL. 47. ISSUE 6. P. 825 -830 | 5 | 63% | 2 |
7 | MIRSAGATOV, SA , SAPAEV, IB , (2014) PHOTOELECTRIC AND ELECTRICAL PROPERTIES OF A REVERSE-BIASED P-SI/N-CDS/N (+)-CDS HETEROSTRUCTURE.INORGANIC MATERIALS. VOL. 50. ISSUE 5. P. 437-442 | 3 | 100% | 0 |
8 | MIRSAGATOV, SA , LEIDERMAN, AY , AITBAEV, BU , MAKHMUDOV, MA , (2009) INVESTIGATION OF CURRENT-VOLTAGE CHARACTERISTICS OF THE N-CDS-P-CDTE STRUCTURE WITH AN EXTENDED LAYER OF THE INTERMEDIATE SOLID SOLUTION.PHYSICS OF THE SOLID STATE. VOL. 51. ISSUE 10. P. 2032 -2039 | 4 | 80% | 1 |
9 | SAIDOV, AS , LEYDERMAN, AY , USMONOV, SN , KHOLIKOV, KT , (2009) I-V CHARACTERISTIC OF P-N STRUCTURES BASED ON A CONTINUOUS SOLID SOLUTIONS (SI-2)(1-XX) (CDS) (X).SEMICONDUCTORS. VOL. 43. ISSUE 4. P. 416-418 | 3 | 100% | 4 |
10 | ABRAMOV, AA , GORBATYI, IN , (2003) INTERVALLEY REDISTRIBUTION OF ELECTRONS AT LOW TEMPERATURES AND THE MAGNETODIODE EFFECT.SEMICONDUCTORS. VOL. 37. ISSUE 9. P. 1053-1056 | 3 | 100% | 1 |
Classes with closest relation at Level 1 |