Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
2516 | 3832 | 24.4 | 82% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
215 | 3 | ZNO//ZINC OXIDE//GAS SENSOR | 51306 |
2516 | 2 | THIN FILM TRANSISTORS//THIN FILM TRANSISTORS TFTS//IGZO | 3832 |
497 | 1 | THIN FILM TRANSISTORS//THIN FILM TRANSISTORS TFTS//IGZO | 3370 |
20399 | 1 | RFE2O4//LUFE2O4//CAAC IGZO | 462 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | THIN FILM TRANSISTORS | authKW | 1641919 | 17% | 32% | 643 |
2 | THIN FILM TRANSISTORS TFTS | authKW | 765165 | 5% | 46% | 207 |
3 | IGZO | authKW | 659552 | 3% | 84% | 98 |
4 | OXIDE SEMICONDUCTOR | authKW | 621338 | 4% | 49% | 158 |
5 | INGAZNO | authKW | 582240 | 2% | 89% | 82 |
6 | THIN FILM TRANSISTOR TFT | authKW | 561450 | 5% | 35% | 201 |
7 | AMORPHOUS OXIDE SEMICONDUCTOR | authKW | 525913 | 2% | 99% | 67 |
8 | AMORPHOUS INDIUM GALLIUM ZINC OXIDE A IGZO | authKW | 497796 | 2% | 92% | 68 |
9 | INDIUM GALLIUM ZINC OXIDE IGZO | authKW | 494980 | 2% | 96% | 65 |
10 | OXIDE TFT | authKW | 489883 | 2% | 92% | 67 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 33398 | 59% | 0% | 2272 |
2 | Materials Science, Multidisciplinary | 9623 | 36% | 0% | 1390 |
3 | Engineering, Electrical & Electronic | 7081 | 27% | 0% | 1021 |
4 | Nanoscience & Nanotechnology | 5048 | 13% | 0% | 498 |
5 | Physics, Condensed Matter | 4926 | 20% | 0% | 778 |
6 | Materials Science, Coatings & Films | 3875 | 8% | 0% | 293 |
7 | Materials Science, Ceramics | 397 | 2% | 0% | 91 |
8 | Optics | 367 | 6% | 0% | 212 |
9 | Physics, Multidisciplinary | 221 | 5% | 0% | 202 |
10 | Chemistry, Multidisciplinary | 120 | 7% | 0% | 265 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | OXIDE ELECT TEAM | 207415 | 1% | 96% | 27 |
2 | TRANSPARENT ELECT TEAM | 132771 | 1% | 83% | 20 |
3 | ADV DISPLAY | 129025 | 2% | 22% | 75 |
4 | ADV DISPLAY SYST PLICAT | 110015 | 2% | 19% | 72 |
5 | DISPLAY | 83859 | 3% | 10% | 106 |
6 | ADV MAT ENGN INFORMAT ELECT | 79372 | 2% | 16% | 61 |
7 | MANA ADV DEVICE MAT GRP | 68850 | 0% | 79% | 11 |
8 | INFORMAT DISPLAY | 68637 | 3% | 8% | 103 |
9 | MANA FOUNDRY | 60370 | 0% | 63% | 12 |
10 | MAT SCI CENIMAT I3N | 55766 | 0% | 100% | 7 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE ELECTRON DEVICE LETTERS | 83744 | 8% | 3% | 308 |
2 | JOURNAL OF DISPLAY TECHNOLOGY | 42258 | 2% | 6% | 83 |
3 | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 42013 | 2% | 6% | 84 |
4 | JAPANESE JOURNAL OF APPLIED PHYSICS | 17182 | 5% | 1% | 186 |
5 | APPLIED PHYSICS LETTERS | 15087 | 12% | 0% | 463 |
6 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 14928 | 4% | 1% | 170 |
7 | ELECTROCHEMICAL AND SOLID STATE LETTERS | 13657 | 2% | 2% | 86 |
8 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 12909 | 1% | 4% | 46 |
9 | ECS SOLID STATE LETTERS | 11696 | 1% | 6% | 23 |
10 | THIN SOLID FILMS | 7104 | 5% | 1% | 183 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | THIN FILM TRANSISTORS | 1641919 | 17% | 32% | 643 | Search THIN+FILM+TRANSISTORS | Search THIN+FILM+TRANSISTORS |
2 | THIN FILM TRANSISTORS TFTS | 765165 | 5% | 46% | 207 | Search THIN+FILM+TRANSISTORS+TFTS | Search THIN+FILM+TRANSISTORS+TFTS |
3 | IGZO | 659552 | 3% | 84% | 98 | Search IGZO | Search IGZO |
4 | OXIDE SEMICONDUCTOR | 621338 | 4% | 49% | 158 | Search OXIDE+SEMICONDUCTOR | Search OXIDE+SEMICONDUCTOR |
5 | INGAZNO | 582240 | 2% | 89% | 82 | Search INGAZNO | Search INGAZNO |
6 | THIN FILM TRANSISTOR TFT | 561450 | 5% | 35% | 201 | Search THIN+FILM+TRANSISTOR+TFT | Search THIN+FILM+TRANSISTOR+TFT |
7 | AMORPHOUS OXIDE SEMICONDUCTOR | 525913 | 2% | 99% | 67 | Search AMORPHOUS+OXIDE+SEMICONDUCTOR | Search AMORPHOUS+OXIDE+SEMICONDUCTOR |
8 | AMORPHOUS INDIUM GALLIUM ZINC OXIDE A IGZO | 497796 | 2% | 92% | 68 | Search AMORPHOUS+INDIUM+GALLIUM+ZINC+OXIDE+A+IGZO | Search AMORPHOUS+INDIUM+GALLIUM+ZINC+OXIDE+A+IGZO |
9 | INDIUM GALLIUM ZINC OXIDE IGZO | 494980 | 2% | 96% | 65 | Search INDIUM+GALLIUM+ZINC+OXIDE+IGZO | Search INDIUM+GALLIUM+ZINC+OXIDE+IGZO |
10 | OXIDE TFT | 489883 | 2% | 92% | 67 | Search OXIDE+TFT | Search OXIDE+TFT |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | FORTUNATO, E , BARQUINHA, P , MARTINS, R , (2012) OXIDE SEMICONDUCTOR THIN-FILM TRANSISTORS: A REVIEW OF RECENT ADVANCES.ADVANCED MATERIALS. VOL. 24. ISSUE 22. P. 2945 -2986 | 306 | 75% | 761 |
2 | PARK, JS , MAENG, WJ , KIM, HS , PARK, JS , (2012) REVIEW OF RECENT DEVELOPMENTS IN AMORPHOUS OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR DEVICES.THIN SOLID FILMS. VOL. 520. ISSUE 6. P. 1679 -1693 | 89 | 89% | 292 |
3 | IKEDA, N , NAGATA, T , KANO, J , MORI, S , (2015) PRESENT STATUS OF THE EXPERIMENTAL ASPECT OF RFE2O4 STUDY.JOURNAL OF PHYSICS-CONDENSED MATTER. VOL. 27. ISSUE 5. P. - | 126 | 95% | 4 |
4 | PETTI, L , MUNZENRIEDER, N , VOGT, C , FABER, H , BUTHE, L , CANTARELLA, G , BOTTACCHI, F , ANTHOPOULOS, TD , TROSTER, G , (2016) METAL OXIDE SEMICONDUCTOR THIN-FILM TRANSISTORS FOR FLEXIBLE ELECTRONICS.APPLIED PHYSICS REVIEWS. VOL. 3. ISSUE 2. P. - | 145 | 51% | 3 |
5 | KWON, JY , JEONG, JK , (2015) RECENT PROGRESS IN HIGH PERFORMANCE AND RELIABLE N-TYPE TRANSITION METAL OXIDE-BASED THIN FILM TRANSISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 30. ISSUE 2. P. - | 74 | 90% | 22 |
6 | KAMIYA, T , NOMURA, K , HOSONO, H , (2010) PRESENT STATUS OF AMORPHOUS IN-GA-ZN-O THIN-FILM TRANSISTORS.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS. VOL. 11. ISSUE 4. P. - | 74 | 64% | 558 |
7 | PARK, JS , KIM, H , KIM, ID , (2014) OVERVIEW OF ELECTROCERAMIC MATERIALS FOR OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS.JOURNAL OF ELECTROCERAMICS. VOL. 32. ISSUE 2-3. P. 117 -140 | 99 | 70% | 27 |
8 | LAN, LF , ZHANG, P , PENG, JB , (2016) RESEARCH PROGRESS ON OXIDE-BASED THIN FILM TRANSISITORS.ACTA PHYSICA SINICA. VOL. 65. ISSUE 12. P. - | 92 | 82% | 1 |
9 | ANGST, M , (2013) FERROELECTRICITY FROM IRON VALENCE ORDERING IN RARE EARTH FERRITES?.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS. VOL. 7. ISSUE 6. P. 383 -400 | 93 | 86% | 14 |
10 | KAMIYA, T , HOSONO, H , (2010) MATERIAL CHARACTERISTICS AND APPLICATIONS OF TRANSPARENT AMORPHOUS OXIDE SEMICONDUCTORS.NPG ASIA MATERIALS. VOL. 2. ISSUE 1. P. 15 -22 | 52 | 93% | 247 |
Classes with closest relation at Level 2 |