Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
1754 | 6467 | 28.7 | 80% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
685 | 3 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 8241 |
1754 | 2 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 6467 |
38 | 1 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 4971 |
6958 | 1 | ORGANIC MEMORY//ELECTRICAL BISTABILITY//ORGANIC MEMORY DEVICE | 1424 |
36858 | 1 | ORGANIC MEMRISTOR//CRS SOFT CNR//NEGATIVE RESISTS | 72 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | authKW | 2831832 | 11% | 86% | 695 |
2 | MEMRISTOR | authKW | 1841235 | 9% | 70% | 558 |
3 | RRAM | authKW | 1217165 | 4% | 92% | 280 |
4 | RESISTIVE RANDOM ACCESS MEMORY RRAM | authKW | 737635 | 3% | 96% | 163 |
5 | RERAM | authKW | 582786 | 2% | 88% | 141 |
6 | RESISTANCE SWITCHING | authKW | 400847 | 2% | 75% | 114 |
7 | RESISTIVE MEMORY | authKW | 383163 | 1% | 89% | 91 |
8 | RESISTIVE RANDOM ACCESS MEMORY | authKW | 318366 | 1% | 92% | 73 |
9 | NONVOLATILE MEMORY | authKW | 293504 | 3% | 29% | 212 |
10 | ORGANIC MEMORY | authKW | 271831 | 1% | 80% | 72 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 57044 | 60% | 0% | 3856 |
2 | Nanoscience & Nanotechnology | 26422 | 22% | 0% | 1427 |
3 | Materials Science, Multidisciplinary | 16494 | 37% | 0% | 2362 |
4 | Engineering, Electrical & Electronic | 9355 | 24% | 0% | 1547 |
5 | Physics, Condensed Matter | 5190 | 17% | 0% | 1071 |
6 | Chemistry, Multidisciplinary | 1206 | 12% | 0% | 758 |
7 | Materials Science, Coatings & Films | 954 | 3% | 0% | 209 |
8 | Chemistry, Physical | 773 | 10% | 0% | 677 |
9 | Physics, Multidisciplinary | 248 | 5% | 0% | 301 |
10 | Computer Science, Hardware & Architecture | 173 | 1% | 0% | 79 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NANOFABRICAT NOVEL DEVICES INTEGRATED TECHN | 100266 | 1% | 49% | 43 |
2 | ELECT OPTOELECT | 97910 | 1% | 51% | 41 |
3 | WERKSTOFFE ELEKTROTECH 2 | 94728 | 1% | 43% | 47 |
4 | PETER GRUNBERG 7 | 84268 | 0% | 71% | 25 |
5 | NANOFABRICAT NOVEL DEVICE INTEGRAT | 79997 | 0% | 63% | 27 |
6 | MAT ELECT ENGN INFORMAT TECHNOL 2 | 67021 | 0% | 57% | 25 |
7 | ITALIAN UNIV NANOELECT TEAM | 53923 | 0% | 57% | 20 |
8 | ICEAM | 53090 | 0% | 75% | 15 |
9 | THIN FILM NANO TECH | 51387 | 0% | 78% | 14 |
10 | MICROELECT | 50188 | 7% | 3% | 429 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE ELECTRON DEVICE LETTERS | 60949 | 5% | 4% | 342 |
2 | APPLIED PHYSICS LETTERS | 31086 | 13% | 1% | 861 |
3 | ORGANIC ELECTRONICS | 20350 | 2% | 3% | 130 |
4 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 10391 | 1% | 4% | 63 |
5 | ADVANCED ELECTRONIC MATERIALS | 9816 | 0% | 7% | 28 |
6 | NANOTECHNOLOGY | 9562 | 2% | 1% | 155 |
7 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 9456 | 3% | 1% | 177 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS | 8757 | 3% | 1% | 174 |
9 | ECS SOLID STATE LETTERS | 8170 | 0% | 7% | 25 |
10 | IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS | 7687 | 0% | 7% | 23 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | 2831832 | 11% | 86% | 695 | Search RESISTIVE+SWITCHING | Search RESISTIVE+SWITCHING |
2 | MEMRISTOR | 1841235 | 9% | 70% | 558 | Search MEMRISTOR | Search MEMRISTOR |
3 | RRAM | 1217165 | 4% | 92% | 280 | Search RRAM | Search RRAM |
4 | RESISTIVE RANDOM ACCESS MEMORY RRAM | 737635 | 3% | 96% | 163 | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM |
5 | RERAM | 582786 | 2% | 88% | 141 | Search RERAM | Search RERAM |
6 | RESISTANCE SWITCHING | 400847 | 2% | 75% | 114 | Search RESISTANCE+SWITCHING | Search RESISTANCE+SWITCHING |
7 | RESISTIVE MEMORY | 383163 | 1% | 89% | 91 | Search RESISTIVE+MEMORY | Search RESISTIVE+MEMORY |
8 | RESISTIVE RANDOM ACCESS MEMORY | 318366 | 1% | 92% | 73 | Search RESISTIVE+RANDOM+ACCESS+MEMORY | Search RESISTIVE+RANDOM+ACCESS+MEMORY |
9 | NONVOLATILE MEMORY | 293504 | 3% | 29% | 212 | Search NONVOLATILE+MEMORY | Search NONVOLATILE+MEMORY |
10 | ORGANIC MEMORY | 271831 | 1% | 80% | 72 | Search ORGANIC+MEMORY | Search ORGANIC+MEMORY |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | PAN, F , GAO, S , CHEN, C , SONG, C , ZENG, F , (2014) RECENT PROGRESS IN RESISTIVE RANDOM ACCESS MEMORIES: MATERIALS, SWITCHING MECHANISMS, AND PERFORMANCE.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 83. ISSUE . P. 1 -59 | 354 | 91% | 205 |
2 | LEE, JS , LEE, S , NOH, TW , (2015) RESISTIVE SWITCHING PHENOMENA: A REVIEW OF STATISTICAL PHYSICS APPROACHES.APPLIED PHYSICS REVIEWS. VOL. 2. ISSUE 3. P. - | 273 | 81% | 15 |
3 | STEWART, DR , YANG, JJS , STRUKOV, DB , (2013) MEMRISTIVE DEVICES FOR COMPUTING.NATURE NANOTECHNOLOGY. VOL. 8. ISSUE 1. P. 13 -24 | 106 | 82% | 654 |
4 | LIN, WP , LIU, SJ , GONG, T , ZHAO, Q , HUANG, W , (2014) POLYMER-BASED RESISTIVE MEMORY MATERIALS AND DEVICES.ADVANCED MATERIALS. VOL. 26. ISSUE 4. P. 570-606 | 132 | 95% | 110 |
5 | HU, SG , WU, SY , JIA, WW , YU, Q , DENG, LJ , FU, YQ , LIU, Y , CHEN, TP , (2014) REVIEW OF NANOSTRUCTURED RESISTIVE SWITCHING MEMRISTOR AND ITS APPLICATIONS.NANOSCIENCE AND NANOTECHNOLOGY LETTERS. VOL. 6. ISSUE 9. P. 729 -757 | 240 | 87% | 6 |
6 | WONG, HSP , LEE, HY , YU, SM , CHEN, YS , WU, Y , CHEN, PS , LEE, B , CHEN, FT , TSAI, MJ , (2012) METAL-OXIDE RRAM.PROCEEDINGS OF THE IEEE. VOL. 100. ISSUE 6. P. 1951 -1970 | 94 | 95% | 473 |
7 | SIMANJUNTAK, FM , PANDA, D , WEI, KH , TSENG, TY , (2016) STATUS AND PROSPECTS OF ZNO-BASED RESISTIVE SWITCHING MEMORY DEVICES.NANOSCALE RESEARCH LETTERS. VOL. 11. ISSUE . P. - | 211 | 81% | 0 |
8 | BLASCO, J , GHENZI, N , SANE, J , LEVY, P , MIRANDA, E , (2015) EQUIVALENT CIRCUIT MODELING OF THE BISTABLE CONDUCTION CHARACTERISTICS IN ELECTROFORMED THIN DIELECTRIC FILMS.MICROELECTRONICS RELIABILITY. VOL. 55. ISSUE 1. P. 1 -14 | 147 | 94% | 2 |
9 | MOHAMMAD, B , JAOUDE, MA , KUMAR, V , AL HOMOUZ, DM , ABU NAHLA, H , AL-QUTAYRI, M , CHRISTOFOROU, N , (2016) STATE OF THE ART OF METAL OXIDE MEMRISTOR DEVICES.NANOTECHNOLOGY REVIEWS. VOL. 5. ISSUE 3. P. 311 -329 | 119 | 95% | 0 |
10 | PRAKASH, A , JANA, D , MAIKAP, S , (2013) TAO (X) -BASED RESISTIVE SWITCHING MEMORIES: PROSPECTIVE AND CHALLENGES.NANOSCALE RESEARCH LETTERS. VOL. 8. ISSUE . P. - | 104 | 95% | 37 |
Classes with closest relation at Level 2 |