Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
497 | 3370 | 24.4 | 84% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
215 | 3 | ZNO//ZINC OXIDE//GAS SENSOR | 51306 |
2516 | 2 | THIN FILM TRANSISTORS//THIN FILM TRANSISTORS TFTS//IGZO | 3832 |
497 | 1 | THIN FILM TRANSISTORS//THIN FILM TRANSISTORS TFTS//IGZO | 3370 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | THIN FILM TRANSISTORS | authKW | 1855588 | 19% | 32% | 641 |
2 | THIN FILM TRANSISTORS TFTS | authKW | 870120 | 6% | 46% | 207 |
3 | IGZO | authKW | 749999 | 3% | 84% | 98 |
4 | INGAZNO | authKW | 662082 | 2% | 89% | 82 |
5 | THIN FILM TRANSISTOR TFT | authKW | 632136 | 6% | 35% | 200 |
6 | OXIDE SEMICONDUCTOR | authKW | 628342 | 4% | 47% | 149 |
7 | AMORPHOUS OXIDE SEMICONDUCTOR | authKW | 580310 | 2% | 97% | 66 |
8 | AMORPHOUS INDIUM GALLIUM ZINC OXIDE A IGZO | authKW | 566059 | 2% | 92% | 68 |
9 | A IGZO | authKW | 556893 | 2% | 87% | 71 |
10 | INDIUM GALLIUM ZINC OXIDE IGZO | authKW | 545669 | 2% | 94% | 64 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 34281 | 64% | 0% | 2149 |
2 | Materials Science, Multidisciplinary | 9353 | 38% | 0% | 1278 |
3 | Engineering, Electrical & Electronic | 7630 | 29% | 0% | 983 |
4 | Nanoscience & Nanotechnology | 5418 | 14% | 0% | 480 |
5 | Materials Science, Coatings & Films | 4321 | 9% | 0% | 288 |
6 | Physics, Condensed Matter | 3678 | 19% | 0% | 637 |
7 | Materials Science, Ceramics | 391 | 2% | 0% | 84 |
8 | Optics | 320 | 6% | 0% | 186 |
9 | Chemistry, Multidisciplinary | 115 | 7% | 0% | 238 |
10 | Physics, Multidisciplinary | 71 | 4% | 0% | 133 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | OXIDE ELECT TEAM | 235858 | 1% | 96% | 27 |
2 | TRANSPARENT ELECT TEAM | 150978 | 1% | 83% | 20 |
3 | ADV DISPLAY | 146733 | 2% | 22% | 75 |
4 | ADV DISPLAY SYST PLICAT | 125116 | 2% | 19% | 72 |
5 | DISPLAY | 95385 | 3% | 10% | 106 |
6 | ADV MAT ENGN INFORMAT ELECT | 90270 | 2% | 16% | 61 |
7 | MANA ADV DEVICE MAT GRP | 78292 | 0% | 79% | 11 |
8 | INFORMAT DISPLAY | 78075 | 3% | 8% | 103 |
9 | MANA FOUNDRY | 68649 | 0% | 63% | 12 |
10 | MAT SCI CENIMAT I3N | 63414 | 0% | 100% | 7 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE ELECTRON DEVICE LETTERS | 94689 | 9% | 3% | 307 |
2 | JOURNAL OF DISPLAY TECHNOLOGY | 48074 | 2% | 6% | 83 |
3 | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 23544 | 2% | 4% | 59 |
4 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 17021 | 5% | 1% | 170 |
5 | APPLIED PHYSICS LETTERS | 16075 | 13% | 0% | 447 |
6 | ELECTROCHEMICAL AND SOLID STATE LETTERS | 15552 | 3% | 2% | 86 |
7 | JAPANESE JOURNAL OF APPLIED PHYSICS | 15190 | 5% | 1% | 164 |
8 | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 14057 | 1% | 3% | 45 |
9 | ECS SOLID STATE LETTERS | 13306 | 1% | 6% | 23 |
10 | THIN SOLID FILMS | 7768 | 5% | 1% | 179 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | THIN FILM TRANSISTORS | 1855588 | 19% | 32% | 641 | Search THIN+FILM+TRANSISTORS | Search THIN+FILM+TRANSISTORS |
2 | THIN FILM TRANSISTORS TFTS | 870120 | 6% | 46% | 207 | Search THIN+FILM+TRANSISTORS+TFTS | Search THIN+FILM+TRANSISTORS+TFTS |
3 | IGZO | 749999 | 3% | 84% | 98 | Search IGZO | Search IGZO |
4 | INGAZNO | 662082 | 2% | 89% | 82 | Search INGAZNO | Search INGAZNO |
5 | THIN FILM TRANSISTOR TFT | 632136 | 6% | 35% | 200 | Search THIN+FILM+TRANSISTOR+TFT | Search THIN+FILM+TRANSISTOR+TFT |
6 | OXIDE SEMICONDUCTOR | 628342 | 4% | 47% | 149 | Search OXIDE+SEMICONDUCTOR | Search OXIDE+SEMICONDUCTOR |
7 | AMORPHOUS OXIDE SEMICONDUCTOR | 580310 | 2% | 97% | 66 | Search AMORPHOUS+OXIDE+SEMICONDUCTOR | Search AMORPHOUS+OXIDE+SEMICONDUCTOR |
8 | AMORPHOUS INDIUM GALLIUM ZINC OXIDE A IGZO | 566059 | 2% | 92% | 68 | Search AMORPHOUS+INDIUM+GALLIUM+ZINC+OXIDE+A+IGZO | Search AMORPHOUS+INDIUM+GALLIUM+ZINC+OXIDE+A+IGZO |
9 | A IGZO | 556893 | 2% | 87% | 71 | Search A+IGZO | Search A+IGZO |
10 | INDIUM GALLIUM ZINC OXIDE IGZO | 545669 | 2% | 94% | 64 | Search INDIUM+GALLIUM+ZINC+OXIDE+IGZO | Search INDIUM+GALLIUM+ZINC+OXIDE+IGZO |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | FORTUNATO, E , BARQUINHA, P , MARTINS, R , (2012) OXIDE SEMICONDUCTOR THIN-FILM TRANSISTORS: A REVIEW OF RECENT ADVANCES.ADVANCED MATERIALS. VOL. 24. ISSUE 22. P. 2945 -2986 | 306 | 75% | 761 |
2 | PARK, JS , MAENG, WJ , KIM, HS , PARK, JS , (2012) REVIEW OF RECENT DEVELOPMENTS IN AMORPHOUS OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR DEVICES.THIN SOLID FILMS. VOL. 520. ISSUE 6. P. 1679 -1693 | 89 | 89% | 292 |
3 | KWON, JY , JEONG, JK , (2015) RECENT PROGRESS IN HIGH PERFORMANCE AND RELIABLE N-TYPE TRANSITION METAL OXIDE-BASED THIN FILM TRANSISTORS.SEMICONDUCTOR SCIENCE AND TECHNOLOGY. VOL. 30. ISSUE 2. P. - | 74 | 90% | 22 |
4 | KAMIYA, T , NOMURA, K , HOSONO, H , (2010) PRESENT STATUS OF AMORPHOUS IN-GA-ZN-O THIN-FILM TRANSISTORS.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS. VOL. 11. ISSUE 4. P. - | 74 | 64% | 558 |
5 | PETTI, L , MUNZENRIEDER, N , VOGT, C , FABER, H , BUTHE, L , CANTARELLA, G , BOTTACCHI, F , ANTHOPOULOS, TD , TROSTER, G , (2016) METAL OXIDE SEMICONDUCTOR THIN-FILM TRANSISTORS FOR FLEXIBLE ELECTRONICS.APPLIED PHYSICS REVIEWS. VOL. 3. ISSUE 2. P. - | 144 | 50% | 3 |
6 | PARK, JS , KIM, H , KIM, ID , (2014) OVERVIEW OF ELECTROCERAMIC MATERIALS FOR OXIDE SEMICONDUCTOR THIN FILM TRANSISTORS.JOURNAL OF ELECTROCERAMICS. VOL. 32. ISSUE 2-3. P. 117 -140 | 99 | 70% | 27 |
7 | LAN, LF , ZHANG, P , PENG, JB , (2016) RESEARCH PROGRESS ON OXIDE-BASED THIN FILM TRANSISITORS.ACTA PHYSICA SINICA. VOL. 65. ISSUE 12. P. - | 92 | 82% | 1 |
8 | KAMIYA, T , HOSONO, H , (2010) MATERIAL CHARACTERISTICS AND APPLICATIONS OF TRANSPARENT AMORPHOUS OXIDE SEMICONDUCTORS.NPG ASIA MATERIALS. VOL. 2. ISSUE 1. P. 15 -22 | 52 | 93% | 247 |
9 | KIM, SJ , YOON, S , KIM, HJ , (2014) REVIEW OF SOLUTION-PROCESSED OXIDE THIN-FILM TRANSISTORS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 53. ISSUE 2. P. - | 47 | 98% | 35 |
10 | KWON, JY , LEE, DJ , KIM, KB , (2011) REVIEW PAPER: TRANSPARENT AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR.ELECTRONIC MATERIALS LETTERS. VOL. 7. ISSUE 1. P. 1 -11 | 56 | 80% | 109 |
Classes with closest relation at Level 1 |