Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
33111 | 129 | 14.4 | 43% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
509 | 3 | LASER INDUCED BREAKDOWN SPECTROSCOPY//LIBS//LASER ABLATION | 21553 |
4189 | 2 | ALPHA AL2O30001//HGCDTE SI HETEROSTRUCTURE//SURFYNOL 465 | 500 |
33111 | 1 | HGCDTE SI HETEROSTRUCTURE//HGCDTE FILM//HGCDTE THIN FILMS | 129 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | HGCDTE SI HETEROSTRUCTURE | authKW | 946839 | 3% | 100% | 4 |
2 | HGCDTE FILM | authKW | 631224 | 3% | 67% | 4 |
3 | HGCDTE THIN FILMS | authKW | 532596 | 2% | 75% | 3 |
4 | SECT EXPT PHYS | address | 455205 | 4% | 38% | 5 |
5 | 3D CRYSTAL DEFECTS | authKW | 236710 | 1% | 100% | 1 |
6 | CUTTING PRETREATMENT | authKW | 236710 | 1% | 100% | 1 |
7 | DEPOSITION TIME OF BUFFER LAYER | authKW | 236710 | 1% | 100% | 1 |
8 | DIMENSIONLESS DIFFERENTIAL SLOPE | authKW | 236710 | 1% | 100% | 1 |
9 | ELECTRONOGRAPHY | authKW | 236710 | 1% | 100% | 1 |
10 | ELEMENTS STRUCT OPTOINFORMAT | address | 236710 | 1% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 820 | 51% | 0% | 66 |
2 | Materials Science, Coatings & Films | 768 | 18% | 0% | 23 |
3 | Physics, Condensed Matter | 472 | 33% | 0% | 42 |
4 | Materials Science, Multidisciplinary | 267 | 33% | 0% | 43 |
5 | Metallurgy & Metallurgical Engineering | 43 | 7% | 0% | 9 |
6 | Materials Science, Ceramics | 41 | 4% | 0% | 5 |
7 | Physics, Multidisciplinary | 36 | 9% | 0% | 12 |
8 | Nanoscience & Nanotechnology | 23 | 5% | 0% | 7 |
9 | Chemistry, Physical | 21 | 12% | 0% | 15 |
10 | Physics, Fluids & Plasmas | 14 | 3% | 0% | 4 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SECT EXPT PHYS | 455205 | 4% | 38% | 5 |
2 | ELEMENTS STRUCT OPTOINFORMAT | 236710 | 1% | 100% | 1 |
3 | HIGHER PEDAGOG | 236710 | 1% | 100% | 1 |
4 | LASINV LASHKARYOV SEMICOND PHYS | 236710 | 1% | 100% | 1 |
5 | LOSHKAREV SEMICOND PHYS | 236710 | 1% | 100% | 1 |
6 | PROBLEMS LOGGING INFORMAT | 236710 | 1% | 100% | 1 |
7 | SHEVCHENKO PL PHYS PROBLEMS | 236710 | 1% | 100% | 1 |
8 | HIGHER PEDAG | 236708 | 2% | 50% | 2 |
9 | IN FRANTSEVICH PROBLEMS MAT | 118354 | 1% | 50% | 1 |
10 | SCI CRYSTAL | 78902 | 1% | 33% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | TECHNICAL PHYSICS LETTERS | 2336 | 6% | 0% | 8 |
2 | TECHNICAL PHYSICS | 2070 | 5% | 0% | 7 |
3 | POWDER METALLURGY AND METAL CERAMICS | 1188 | 2% | 0% | 3 |
4 | APPLIED SURFACE SCIENCE | 1131 | 10% | 0% | 13 |
5 | METALLOFIZIKA I NOVEISHIE TEKHNOLOGII | 850 | 2% | 0% | 3 |
6 | PLASMA PHYSICS REPORTS | 773 | 2% | 0% | 3 |
7 | MATERIALS WORLD | 678 | 1% | 0% | 1 |
8 | UKRAINSKII FIZICHESKII ZHURNAL | 643 | 2% | 0% | 3 |
9 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 643 | 2% | 0% | 3 |
10 | INORGANIC MATERIALS | 628 | 4% | 0% | 5 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | HGCDTE SI HETEROSTRUCTURE | 946839 | 3% | 100% | 4 | Search HGCDTE+SI+HETEROSTRUCTURE | Search HGCDTE+SI+HETEROSTRUCTURE |
2 | HGCDTE FILM | 631224 | 3% | 67% | 4 | Search HGCDTE+FILM | Search HGCDTE+FILM |
3 | HGCDTE THIN FILMS | 532596 | 2% | 75% | 3 | Search HGCDTE+THIN+FILMS | Search HGCDTE+THIN+FILMS |
4 | 3D CRYSTAL DEFECTS | 236710 | 1% | 100% | 1 | Search 3D+CRYSTAL+DEFECTS | Search 3D+CRYSTAL+DEFECTS |
5 | CUTTING PRETREATMENT | 236710 | 1% | 100% | 1 | Search CUTTING+PRETREATMENT | Search CUTTING+PRETREATMENT |
6 | DEPOSITION TIME OF BUFFER LAYER | 236710 | 1% | 100% | 1 | Search DEPOSITION+TIME+OF+BUFFER+LAYER | Search DEPOSITION+TIME+OF+BUFFER+LAYER |
7 | DIMENSIONLESS DIFFERENTIAL SLOPE | 236710 | 1% | 100% | 1 | Search DIMENSIONLESS+DIFFERENTIAL+SLOPE | Search DIMENSIONLESS+DIFFERENTIAL+SLOPE |
8 | ELECTRONOGRAPHY | 236710 | 1% | 100% | 1 | Search ELECTRONOGRAPHY | Search ELECTRONOGRAPHY |
9 | FLEXIBLE NANOBRUSH | 236710 | 1% | 100% | 1 | Search FLEXIBLE+NANOBRUSH | Search FLEXIBLE+NANOBRUSH |
10 | GAAS AND GAP LAYERS | 236710 | 1% | 100% | 1 | Search GAAS+AND+GAP+LAYERS | Search GAAS+AND+GAP+LAYERS |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | LIU, M , MAN, BY , LIN, XC , LI, XY , (2010) EFFECT OF TARGET-SUBSTRATE SEPARATION ON HGCDTE FILMS FORMED BY PULSED LASER DEPOSITION.JOURNAL OF CRYSTAL GROWTH. VOL. 312. ISSUE 7. P. 914-917 | 9 | 69% | 0 |
2 | LIU, M , BI, D , MAN, BY , KONG, DM , XU, XY , (2013) EFFECTS OF CDZNTE BUFFER LAYER THICKNESS ON PROPERTIES OF HGCDTE THIN FILM GROWN BY PULSED LASER DEPOSITION.APPLIED SURFACE SCIENCE. VOL. 264. ISSUE . P. 522 -526 | 9 | 50% | 1 |
3 | LIU, M , MAN, BY , LIN, XC , LI, XY , WEI, J , (2009) THE EFFECT OF SUBSTRATE MATERIAL ON PULSED LASER DEPOSITION OF HGCDTE FILMS.APPLIED SURFACE SCIENCE. VOL. 255. ISSUE 9. P. 4848 -4851 | 7 | 64% | 4 |
4 | GORBACH, TY , MATVEEVA, LA , SMERTENKO, PS , SVECHNIKOV, SV , VENGER, EF , KUZMA, M , WISZ, G , CIACH, R , RAKOWSKA, A , (2000) PROBE MICROANALYSIS INVESTIGATION AND ELECTROREFLECTANCE SPECTROSCOPY OF HG1-XCDXTEPLD FILMS ON SILICON PATTERNED SUBSTRATES.THIN SOLID FILMS. VOL. 380. ISSUE 1-2. P. 256-258 | 5 | 100% | 2 |
5 | SHUAIBOV, AK , CHUCHMAN, MP , DASHCHENKO, AI , (2003) STUDY OF THE DYNAMICS OF OPTICAL EMISSION FROM THE PLASMA FORMED DURING LASER ABLATION OF A POLYCRYSTALLINE CUINS2 TARGET.TECHNICAL PHYSICS LETTERS. VOL. 29. ISSUE 5. P. 408-410 | 5 | 83% | 2 |
6 | OSTROVSKII, IP , GIJ, YS , TSMOTS, VM , PAVLOVSKII, YP , (2004) A STUDY OF THE MORPHOLOGY AND MAGNETIC PROPERTIES OF SILICON WHISKERS.CRYSTALLOGRAPHY REPORTS. VOL. 49. ISSUE 2. P. 202-205 | 4 | 100% | 3 |
7 | GORBACH, TY , KUZMA, M , SMERTENKO, PS , SVECHNIKOV, SV , WISZ, G , (2003) ANISOTROPICALLY ETCHED SI SURFACE AND THE ELECTRICAL PROPERTIES OF SI/HGCDTE HETEROSTRUCTURES.THIN SOLID FILMS. VOL. 428. ISSUE 1-2. P. 165 -169 | 8 | 50% | 2 |
8 | DRUZHININ, AA , OSTROVSKII, IP , KHOVERKO, YM , KOGUT, IR , NICHKALO, SI , WARCHULSKA, JK , (2012) MAGNETIC SUSCEPTIBILITY OF DOPED SI NANOWHISKERS.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY. VOL. 12. ISSUE 11. P. 8690-8693 | 5 | 63% | 1 |
9 | VIRT, IS , BESTER, M , DUMANSKI, L , KUZMA, M , RUDYJ, IO , FRUGYNSKYI, MS , KURILO, IV , (2001) PROPERTIES OF HGCDTE FILMS OBTAINED BY LASER DEPOSITION ON A SAPPHIRE.APPLIED SURFACE SCIENCE. VOL. 177. ISSUE 3. P. 201-206 | 6 | 67% | 5 |
10 | PAUSTOVSKY, OV , RUD, BM , SHELUDKO, VY , TELNIKOV, EY , KREMENYTSKY, VV , ZAK-HARCHENKO, IV , SMERTENKO, PS , ROGOZ-YNSKA, AO , (2007) STRUCTURE OF A SURFACE AND ELECTROPHYSICAL PROPERTIES OF RESISTIVE THICK FILMS BASED ON BAB6 AFTER LASER ACTION.METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. VOL. 29. ISSUE 10. P. 1347-1359 | 4 | 80% | 0 |
Classes with closest relation at Level 1 |