Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
368 | 3582 | 17.8 | 68% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
731 | 2 | ZNSE//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 12609 |
368 | 1 | ZNSE//ZNMGSSE//JOURNAL OF CRYSTAL GROWTH | 3582 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | ZNSE | authKW | 940227 | 8% | 39% | 285 |
2 | ZNMGSSE | authKW | 277794 | 1% | 88% | 37 |
3 | JOURNAL OF CRYSTAL GROWTH | journal | 219668 | 25% | 3% | 893 |
4 | ZNSSE | authKW | 164598 | 1% | 74% | 26 |
5 | ZNSE GAAS | authKW | 120052 | 1% | 78% | 18 |
6 | ZNCDSE | authKW | 90146 | 1% | 46% | 23 |
7 | ZNSE CRYSTALS | authKW | 85228 | 0% | 100% | 10 |
8 | ZINC SELENIDE | authKW | 78833 | 1% | 24% | 38 |
9 | P TYPE ZNSE | authKW | 77478 | 0% | 91% | 10 |
10 | ZNMGSE | authKW | 72186 | 0% | 71% | 12 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 41352 | 68% | 0% | 2425 |
2 | Crystallography | 31372 | 25% | 0% | 913 |
3 | Materials Science, Multidisciplinary | 10200 | 38% | 0% | 1374 |
4 | Physics, Condensed Matter | 6630 | 24% | 0% | 855 |
5 | Materials Science, Coatings & Films | 1068 | 4% | 0% | 157 |
6 | Engineering, Electrical & Electronic | 814 | 11% | 0% | 405 |
7 | Physics, Multidisciplinary | 239 | 6% | 0% | 198 |
8 | Nanoscience & Nanotechnology | 139 | 3% | 0% | 112 |
9 | Optics | 76 | 3% | 0% | 124 |
10 | Microscopy | 76 | 1% | 0% | 22 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IST ICMAT | 53260 | 0% | 63% | 10 |
2 | ELECT ENGN COURSE | 47190 | 0% | 46% | 12 |
3 | NEW YORK STATE ADV TECHNOL PHOTON MAT PLI | 34091 | 0% | 100% | 4 |
4 | PHOTON MAT SECTOR | 25568 | 0% | 100% | 3 |
5 | OPTOELECT MAT OPTOELECT DEVICES | 17046 | 0% | 100% | 2 |
6 | TECNOL AVANZATE SUPERF CATAL | 17046 | 0% | 100% | 2 |
7 | HALBLEITERTECH | 15600 | 1% | 7% | 27 |
8 | MICROGRAV SCI PLICAT | 14904 | 0% | 25% | 7 |
9 | BASIC HIGH TECHNOL S | 13938 | 0% | 27% | 6 |
10 | UNITE MIXTE 380046 | 11362 | 0% | 67% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | JOURNAL OF CRYSTAL GROWTH | 219668 | 25% | 3% | 893 |
2 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 13736 | 4% | 1% | 140 |
3 | APPLIED PHYSICS LETTERS | 11317 | 11% | 0% | 389 |
4 | JOURNAL OF ELECTRONIC MATERIALS | 8108 | 3% | 1% | 97 |
5 | JOURNAL OF APPLIED PHYSICS | 5456 | 8% | 0% | 269 |
6 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 5281 | 3% | 1% | 112 |
7 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 4365 | 0% | 3% | 17 |
8 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 4120 | 3% | 0% | 125 |
9 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 4003 | 3% | 1% | 90 |
10 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 3627 | 2% | 1% | 59 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ZNSE | 940227 | 8% | 39% | 285 | Search ZNSE | Search ZNSE |
2 | ZNMGSSE | 277794 | 1% | 88% | 37 | Search ZNMGSSE | Search ZNMGSSE |
3 | ZNSSE | 164598 | 1% | 74% | 26 | Search ZNSSE | Search ZNSSE |
4 | ZNSE GAAS | 120052 | 1% | 78% | 18 | Search ZNSE+GAAS | Search ZNSE+GAAS |
5 | ZNCDSE | 90146 | 1% | 46% | 23 | Search ZNCDSE | Search ZNCDSE |
6 | ZNSE CRYSTALS | 85228 | 0% | 100% | 10 | Search ZNSE+CRYSTALS | Search ZNSE+CRYSTALS |
7 | ZINC SELENIDE | 78833 | 1% | 24% | 38 | Search ZINC+SELENIDE | Search ZINC+SELENIDE |
8 | P TYPE ZNSE | 77478 | 0% | 91% | 10 | Search P+TYPE+ZNSE | Search P+TYPE+ZNSE |
9 | ZNMGSE | 72186 | 0% | 71% | 12 | Search ZNMGSE | Search ZNMGSE |
10 | P ZNSE | 62756 | 0% | 82% | 9 | Search P+ZNSE | Search P+ZNSE |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GUTOWSKI, J , PRESSER, N , KUDLEK, G , (1990) OPTICAL-PROPERTIES OF ZNSE EPILAYERS AND FILMS.PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. VOL. 120. ISSUE 1. P. 11-59 | 125 | 83% | 164 |
2 | SKROMME, BJ , (1995) LUMINESCENCE AS A DIAGNOSTIC OF WIDE-GAP II-VI COMPOUND SEMICONDUCTOR-MATERIALS.ANNUAL REVIEW OF MATERIALS SCIENCE. VOL. 25. ISSUE . P. 601-646 | 103 | 92% | 9 |
3 | DESNICA, UV , (1998) DOPING LIMITS IN II-VI COMPOUNDS - CHALLENGES, PROBLEMS AND SOLUTIONS.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 36. ISSUE 4. P. 291 -357 | 138 | 53% | 87 |
4 | FUJITA, S , FUJITA, S , (1997) GROWTH AND CHARACTERIZATION OF ZNSE-BASED II-VI SEMICONDUCTORS BY MOVPE.II-VI BLUE/GREEN LIGHT EMITTERS : DEVICE PHYSICS AND EPITAXIAL GROWTH. VOL. 44. ISSUE . P. 59-81 | 66 | 93% | 1 |
5 | PRETE, P , LOVERGINE, N , (2002) RECENT DEVELOPMENTS IN THE MOVPE GROWTH OF LOW H CONTENT ZNSE-BASED COMPOUNDS AND HETEROSTRUCTURES.PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS. VOL. 44. ISSUE 1. P. 1 -44 | 55 | 93% | 2 |
6 | HAN, J , GUNSHOR, RL , (1997) MBE GROWTH AND ELECTRICAL PROPERTIES OF WIDE BANDGAP ZNSE-BASED II-VI SEMICONDUCTORS.II-VI BLUE/GREEN LIGHT EMITTERS : DEVICE PHYSICS AND EPITAXIAL GROWTH. VOL. 44. ISSUE . P. 1 -58 | 77 | 79% | 2 |
7 | FAURIE, JP , TOURNIE, E , (2000) ZNSE-BASED HETEROSTRUCTURES FOR BLUE-GREEN LASERS.COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE. VOL. 1. ISSUE 1. P. 23 -33 | 58 | 92% | 4 |
8 | KOLODZIEJSKI, LA , GUNSHOR, RL , NURMIKKO, AV , (1995) WIDE-BANDGAP II-VI HETEROSTRUCTURES FOR BLUE-GREEN OPTICAL SOURCES - KEY MATERIALS ISSUES.ANNUAL REVIEW OF MATERIALS SCIENCE. VOL. 25. ISSUE . P. 711-753 | 80 | 76% | 20 |
9 | GAUL, DA , REES, WS , (2000) TRUE BLUE INORGANIC OPTOELECTRONIC DEVICES.ADVANCED MATERIALS. VOL. 12. ISSUE 13. P. 935 -946 | 69 | 68% | 50 |
10 | NEUMARK, GF , (1997) DEFECTS IN WIDE BAND GAP II-VI CRYSTALS.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 21. ISSUE 1. P. 1-46 | 84 | 56% | 89 |
Classes with closest relation at Level 1 |