Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
4857 | 1713 | 24.1 | 72% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
899 | 2 | SURFACE SCIENCE//SILICON//SCANNING TUNNELING MICROSCOPY | 11316 |
4857 | 1 | SI110//SURFACE SCIENCE//SI111 7 X 7 | 1713 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | SI110 | authKW | 117050 | 1% | 39% | 17 |
2 | SURFACE SCIENCE | journal | 79290 | 20% | 1% | 346 |
3 | SI111 7 X 7 | authKW | 73317 | 1% | 34% | 12 |
4 | DAS STRUCTURE | authKW | 57035 | 0% | 80% | 4 |
5 | 16 X 2 | authKW | 53472 | 0% | 100% | 3 |
6 | 7X7 | authKW | 53472 | 0% | 100% | 3 |
7 | GE111 C2 X 8 | authKW | 53472 | 0% | 100% | 3 |
8 | SI110 SURFACE | authKW | 47528 | 0% | 67% | 4 |
9 | SI111 | authKW | 47204 | 2% | 10% | 26 |
10 | SCANNING TUNNELING MICROSCOPY | authKW | 45836 | 6% | 2% | 108 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 22560 | 60% | 0% | 1020 |
2 | Chemistry, Physical | 3052 | 30% | 0% | 508 |
3 | Materials Science, Coatings & Films | 2582 | 9% | 0% | 158 |
4 | Physics, Applied | 2340 | 26% | 0% | 439 |
5 | Physics, Multidisciplinary | 1089 | 13% | 0% | 223 |
6 | Microscopy | 243 | 1% | 0% | 24 |
7 | Nanoscience & Nanotechnology | 80 | 3% | 0% | 57 |
8 | Materials Science, Multidisciplinary | 31 | 7% | 0% | 117 |
9 | Crystallography | 10 | 1% | 0% | 23 |
10 | Spectroscopy | 9 | 1% | 0% | 23 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | BEIJING VACUUM PHYS | 31238 | 1% | 16% | 11 |
2 | ADV NANO TECHNOL SAINT | 17824 | 0% | 100% | 1 |
3 | AN FRUNMKIN PHYS CHEM ELE OCHEM | 17824 | 0% | 100% | 1 |
4 | CNRS RECH MAT CONDENSEE NANOSCI | 17824 | 0% | 100% | 1 |
5 | ENEA SETTORE NUOVI MAT | 17824 | 0% | 100% | 1 |
6 | INERDIPARIMENTALE GRANDI PARECCHIATURE | 17824 | 0% | 100% | 1 |
7 | KOKOHU KU | 17824 | 0% | 100% | 1 |
8 | MICROTECH FRANCHE COMTE METROL INTER E | 17824 | 0% | 100% | 1 |
9 | MIFF | 17824 | 0% | 100% | 1 |
10 | MUSASHINO ELECT COMMUN ADV TECHNOL | 17824 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SURFACE SCIENCE | 79290 | 20% | 1% | 346 |
2 | PHYSICAL REVIEW B | 16886 | 23% | 0% | 398 |
3 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 4908 | 4% | 0% | 63 |
4 | SURFACE REVIEW AND LETTERS | 4204 | 1% | 1% | 25 |
5 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 3366 | 1% | 1% | 15 |
6 | APPLIED SURFACE SCIENCE | 2676 | 4% | 0% | 74 |
7 | PHYSICAL REVIEW LETTERS | 2603 | 7% | 0% | 121 |
8 | PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2100 | 1% | 1% | 10 |
9 | SOLID STATE COMMUNICATIONS | 1594 | 3% | 0% | 49 |
10 | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1478 | 3% | 0% | 52 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SI110 | 117050 | 1% | 39% | 17 | Search SI110 | Search SI110 |
2 | SI111 7 X 7 | 73317 | 1% | 34% | 12 | Search SI111+7+X+7 | Search SI111+7+X+7 |
3 | DAS STRUCTURE | 57035 | 0% | 80% | 4 | Search DAS+STRUCTURE | Search DAS+STRUCTURE |
4 | 16 X 2 | 53472 | 0% | 100% | 3 | Search 16+X+2 | Search 16+X+2 |
5 | 7X7 | 53472 | 0% | 100% | 3 | Search 7X7 | Search 7X7 |
6 | GE111 C2 X 8 | 53472 | 0% | 100% | 3 | Search GE111+C2+X+8 | Search GE111+C2+X+8 |
7 | SI110 SURFACE | 47528 | 0% | 67% | 4 | Search SI110+SURFACE | Search SI110+SURFACE |
8 | SI111 | 47204 | 2% | 10% | 26 | Search SI111 | Search SI111 |
9 | SCANNING TUNNELING MICROSCOPY | 45836 | 6% | 2% | 108 | Search SCANNING+TUNNELING+MICROSCOPY | Search SCANNING+TUNNELING+MICROSCOPY |
10 | SI111ROOT 3 X ROOT 3 AL | 40102 | 0% | 75% | 3 | Search SI111ROOT+3+X+ROOT+3+AL | Search SI111ROOT+3+X+ROOT+3+AL |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GUO, HM , QIN, ZH , MA, HF , GAO, HJ , WANG, YL , (2008) TOWARD A DETAILED UNDERSTANDING OF SI(111)-7 X 7 SURFACE AND ADSORBED GE NANOSTRUCTURES: FABRICATIONS, STRUCTURES, AND CALCULATIONS.JOURNAL OF NANOMATERIALS. VOL. . ISSUE . P. - | 68 | 66% | 8 |
2 | WANG, YL , SARANIN, AA , ZOTOV, AV , LAI, MY , CHANG, HH , (2008) RANDOM AND ORDERED ARRAYS OF SURFACE MAGIC CLUSTERS.INTERNATIONAL REVIEWS IN PHYSICAL CHEMISTRY. VOL. 27. ISSUE 2. P. 317 -360 | 78 | 53% | 9 |
3 | OLYANICH, DA , MARAROV, VV , UTAS, TV , UTAS, OA , GRUZNEV, DV , ZOTOV, AV , SARANIN, AA , (2015) MAGIC C-60 ISLANDS FORMING DUE TO MOIRE INTERFERENCE BETWEEN ISLANDS AND SUBSTRATE.SURFACE SCIENCE. VOL. 635. ISSUE . P. 94 -98 | 36 | 82% | 1 |
4 | SOBOTIK, P , OST'ADAL, I , KOCAN, P , (2010) LOCAL ELECTRONIC STRUCTURE OF THE SI(111)-(7 X 7) SURFACE INTERACTING WITH AG ATOMS.SURFACE SCIENCE. VOL. 604. ISSUE 19-20. P. 1778 -1783 | 35 | 90% | 0 |
5 | WANG, DM , WU, YN , HUANG, YS , WU, S , (2011) CORRELATED NUCLEATION MODEL FOR SIMULATING NANOCLUSTER PATTERN FORMATION ON SI(111)7 X 7 SURFACE.EUROPEAN PHYSICAL JOURNAL B. VOL. 84. ISSUE 3. P. 451-457 | 35 | 88% | 0 |
6 | SHIMADA, W , SATO, T , TOCHIHARA, H , (2016) MICROSCOPIC MECHANISM OF THE HOMOEPITAXY ON SI(111)7 X 7.PHYSICAL REVIEW B. VOL. 94. ISSUE 3. P. - | 31 | 82% | 0 |
7 | HANEMAN, D , (1987) SURFACES OF SILICON.REPORTS ON PROGRESS IN PHYSICS. VOL. 50. ISSUE 8. P. 1045-1086 | 82 | 59% | 177 |
8 | WANG, DM , ZHU, H , WANG, LP , (2008) METAL-CLUSTER GROWTH WITH ASYMMETRIC DIFFUSION AND REVERSIBLE AGGREGATION ON SI(111)7X7.JOURNAL OF APPLIED PHYSICS. VOL. 103. ISSUE 2. P. - | 29 | 97% | 3 |
9 | WANG, DM , ZHU, H , WANG, LP , WU, YN , (2009) SIMULATION OF FORMATION PROCESS OF THE ORDERED NANOCLUSTER ARRAY ON SI(111)7X7.JOURNAL OF APPLIED PHYSICS. VOL. 106. ISSUE 5. P. - | 27 | 100% | 5 |
10 | KOCAN, P , KREJCI, O , TOCHIHARA, H , (2015) ANOMALOUS STRUCTURAL EVOLUTION AND ROOT 3X ROOT 3 RECONSTRUCTION OF A CLEAN SI(111) SURFACE OBSERVED AFTER THERMAL DESORPTION OF THALLIUM.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. VOL. 33. ISSUE 2. P. - | 29 | 81% | 0 |
Classes with closest relation at Level 1 |