Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
33555 | 123 | 21.0 | 71% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
215 | 3 | ZNO//ZINC OXIDE//GAS SENSOR | 51306 |
103 | 2 | ZNO//ZINC OXIDE//ZINC COMPOUNDS | 25623 |
33555 | 1 | MICROSYST IMICRO//NAT SCI SCI//AD SAKHAROV INT STATE ECOL | 123 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | MICROSYST IMICRO | address | 934605 | 7% | 47% | 8 |
2 | NAT SCI SCI | address | 760278 | 6% | 44% | 7 |
3 | AD SAKHAROV INT STATE ECOL | address | 248257 | 1% | 100% | 1 |
4 | ALUMINUM DOPED ZNO THIN FILM | authKW | 248257 | 1% | 100% | 1 |
5 | AUSSENSTELLE SE6 | address | 248257 | 1% | 100% | 1 |
6 | BUMP DEFECT | authKW | 248257 | 1% | 100% | 1 |
7 | BUMPS REDUCTION | authKW | 248257 | 1% | 100% | 1 |
8 | CHARGE TRAPPING MEMORY DEVICES | authKW | 248257 | 1% | 100% | 1 |
9 | CROSS BAR MEMORIES | authKW | 248257 | 1% | 100% | 1 |
10 | DEFECT GALLERY | authKW | 248257 | 1% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 562 | 44% | 0% | 54 |
2 | Materials Science, Multidisciplinary | 347 | 38% | 0% | 47 |
3 | Physics, Condensed Matter | 315 | 28% | 0% | 34 |
4 | Physics, Multidisciplinary | 197 | 20% | 0% | 24 |
5 | Materials Science, Coatings & Films | 174 | 9% | 0% | 11 |
6 | Nanoscience & Nanotechnology | 121 | 11% | 0% | 14 |
7 | Engineering, Electrical & Electronic | 63 | 15% | 0% | 19 |
8 | Optics | 33 | 8% | 0% | 10 |
9 | Metallurgy & Metallurgical Engineering | 6 | 3% | 0% | 4 |
10 | Microscopy | 5 | 1% | 0% | 1 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | MICROSYST IMICRO | 934605 | 7% | 47% | 8 |
2 | NAT SCI SCI | 760278 | 6% | 44% | 7 |
3 | AD SAKHAROV INT STATE ECOL | 248257 | 1% | 100% | 1 |
4 | AUSSENSTELLE SE6 | 248257 | 1% | 100% | 1 |
5 | SEMICONDUCTOR SCI TECHNOL S | 248257 | 1% | 100% | 1 |
6 | UNIT AGRATE BRIANZA | 248257 | 1% | 100% | 1 |
7 | MAT NAT SCI | 203115 | 2% | 27% | 3 |
8 | MICROSTRUCT ANAL UNIT | 181191 | 8% | 7% | 10 |
9 | MATH NAT SCI | 158970 | 42% | 1% | 52 |
10 | TOSHIBA AMER ELECT COMPONENTS INC | 124127 | 1% | 50% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ACTA PHYSICA POLONICA A | 11362 | 19% | 0% | 23 |
2 | OPTICA APPLICATA | 1374 | 2% | 0% | 3 |
3 | JOURNAL OF SURVEYING ENGINEERING | 1153 | 1% | 0% | 1 |
4 | PHILIPS JOURNAL OF RESEARCH | 741 | 1% | 0% | 1 |
5 | JOURNAL OF NANOBIOTECHNOLOGY | 619 | 1% | 0% | 1 |
6 | AIP ADVANCES | 583 | 2% | 0% | 3 |
7 | MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 496 | 1% | 0% | 1 |
8 | MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 411 | 2% | 0% | 2 |
9 | BULLETIN OF THE POLISH ACADEMY OF SCIENCES-TECHNICAL SCIENCES | 309 | 1% | 0% | 1 |
10 | OPTO-ELECTRONICS REVIEW | 304 | 1% | 0% | 1 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | ALUMINUM DOPED ZNO THIN FILM | 248257 | 1% | 100% | 1 | Search ALUMINUM+DOPED+ZNO+THIN+FILM | Search ALUMINUM+DOPED+ZNO+THIN+FILM |
2 | BUMP DEFECT | 248257 | 1% | 100% | 1 | Search BUMP+DEFECT | Search BUMP+DEFECT |
3 | BUMPS REDUCTION | 248257 | 1% | 100% | 1 | Search BUMPS+REDUCTION | Search BUMPS+REDUCTION |
4 | CHARGE TRAPPING MEMORY DEVICES | 248257 | 1% | 100% | 1 | Search CHARGE+TRAPPING+MEMORY+DEVICES | Search CHARGE+TRAPPING+MEMORY+DEVICES |
5 | CROSS BAR MEMORIES | 248257 | 1% | 100% | 1 | Search CROSS+BAR+MEMORIES | Search CROSS+BAR+MEMORIES |
6 | DEFECT GALLERY | 248257 | 1% | 100% | 1 | Search DEFECT+GALLERY | Search DEFECT+GALLERY |
7 | ELECTRICAL CONDUCTIVITY N TYPE | 248257 | 1% | 100% | 1 | Search ELECTRICAL+CONDUCTIVITY+N+TYPE | Search ELECTRICAL+CONDUCTIVITY+N+TYPE |
8 | HIGH IDEALITY FACTOR | 248257 | 1% | 100% | 1 | Search HIGH+IDEALITY+FACTOR | Search HIGH+IDEALITY+FACTOR |
9 | HIGH K DIELECTRIC OXIDE | 248257 | 1% | 100% | 1 | Search HIGH+K+DIELECTRIC+OXIDE | Search HIGH+K+DIELECTRIC+OXIDE |
10 | ISFET MISFET TECHNOLOGY | 248257 | 1% | 100% | 1 | Search ISFET+MISFET+TECHNOLOGY | Search ISFET+MISFET+TECHNOLOGY |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | GUZIEWICZ, E , GODLEWSKI, M , KRAJEWSKI, TA , WACHNICKI, L , LUKA, G , DOMAGALA, JZ , PASZKOWICZ, W , KOWALSKI, BJ , WITKOWSKI, BS , DUZYNSKA, A , ET AL (2010) ZINC OXIDE GROWN BY ATOMIC LAYER DEPOSITION - A MATERIAL FOR NOVEL 3D ELECTRONICS.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 247. ISSUE 7. P. 1611-1615 | 8 | 67% | 10 |
2 | RATAJCZAK, R , STONERT, A , GUZIEWICZ, E , GIERALTOWSKA, S , KRAJEWSKI, TA , LUKA, G , WACHNICKI, L , WITKOWSKI, BS , GODLEWSKI, M , (2013) RBS/CHANNELING ANALYSIS OF ZINC OXIDE FILMS GROWN AT LOW TEMPERATURE BY ATOMIC LAYER DEPOSITION.ACTA PHYSICA POLONICA A. VOL. 123. ISSUE 5. P. 899 -903 | 8 | 62% | 1 |
3 | WITKOWSKI, BS , WACHNICKI, L , GIERALTOWSKA, S , RESZKA, A , KOWALSKI, BJ , GODLEWSKI, M , (2015) LOW-TEMPERATURE CATHODOLUMINESCENCE INVESTIGATIONS OF HIGH-QUALITY ZINC OXIDE NANORODS.MICROSCOPY AND MICROANALYSIS. VOL. 21. ISSUE 3. P. 564 -569 | 9 | 50% | 1 |
4 | GODLEWSKI, M , GUZIEWICZ, E , GIERALTOWSKA, S , LUKA, G , KRAJEWSKI, T , WACHNICKI, L , KOPALKO, K , (2009) BARRIERS IN MINIATURIZATION OF ELECTRONIC DEVICES AND THE WAYS TO OVERCOME THEM - FROM A PLANAR TO 3D DEVICE ARCHITECTURE.ACTA PHYSICA POLONICA A. VOL. 116. ISSUE . P. S19-S21 | 6 | 86% | 0 |
5 | WACHNICKI, L , KRAJEWSKI, T , LUKA, G , WITKOWSKI, B , KOWALSKI, B , KOPALKO, K , DOMAGALA, JZ , GUZIEWICZ, M , GODLEWSKI, M , GUZIEWICZ, E , (2010) MONOCRYSTALLINE ZINC OXIDE FILMS GROWN BY ATOMIC LAYER DEPOSITION.THIN SOLID FILMS. VOL. 518. ISSUE 16. P. 4556-4559 | 8 | 57% | 16 |
6 | WACHNICKI, L , DUZYNSKA, A , DOMAGALA, JZ , WITKOWSKI, BS , KRAJEWSKI, TA , PRZEZDZIECKA, E , GUZIEWICZ, M , WIERZBICKA, A , KOPALKO, K , FIGGE, S , ET AL (2011) EPITAXIAL ZNO FILMS GROWN AT LOW TEMPERATURE FOR NOVEL ELECTRONIC APPLICATION.ACTA PHYSICA POLONICA A. VOL. 120. ISSUE 6A. P. A7-A10 | 7 | 58% | 1 |
7 | PIETRUSZKA, R , LUKA, G , KOPALKO, K , ZIELONY, E , BIEGANSKI, P , PLACZEK-POPKO, E , GODLEWSKI, M , (2014) PHOTOVOLTAIC AND PHOTOELECTRICAL RESPONSE OF N-ZNO/P-SI HETEROSTRUCTURES WITH ZNO FILMS GROWN BY AN ATOMIC LAYER DEPOSITION METHOD.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 25. ISSUE . P. 190 -196 | 11 | 30% | 8 |
8 | WACHNICKI, L , LUKASIEWICZ, M , WITKOWSKI, B , KRAJEWSKI, T , LUKA, G , KOPALKO, K , MINIKAYEV, R , PRZEZDZIECKA, E , DOMAGALA, JZ , GODLEWSKI, M , ET AL (2010) COMPARISON OF DIMETHYLZINC AND DIETHYLZINC AS PRECURSORS FOR MONOCRYSTALLINE ZINC OXIDE GROWN BY ATOMIC LAYER DEPOSITION METHOD.PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS. VOL. 247. ISSUE 7. P. 1699-1701 | 6 | 60% | 10 |
9 | WITKOWSKI, BS , WACHNICKI, L , NOWAKOWSKI, P , SUCHOCKI, A , GODLEWSKI, M , (2013) TEMPERATURE-DEPENDENCE OF CATHODOLUMINESCENCE OF ZINC OXIDE MONOLAYERS OBTAINED BY ATOMIC LAYER DEPOSITION.OPTICA APPLICATA. VOL. 43. ISSUE 1. P. 187-194 | 7 | 47% | 1 |
10 | MING, Z , DENG, H , ZHANG, BC , (2016) INVESTIGATION OF BUMP DEFECTS FORMED IN BACK END OF LINE FOR 28NM TECHNOLOGICAL NODE.SURFACE AND INTERFACE ANALYSIS. VOL. 48. ISSUE 10. P. 1072 -1079 | 3 | 100% | 0 |
Classes with closest relation at Level 1 |