Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
25274 | 286 | 25.3 | 89% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
215 | 3 | ZNO//ZINC OXIDE//GAS SENSOR | 51306 |
103 | 2 | ZNO//ZINC OXIDE//ZINC COMPOUNDS | 25623 |
25274 | 1 | VAPOR COOLING CONDENSATION SYSTEM//EFFICIENCY GAIN PRODUCT//ZNO GAN | 286 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | VAPOR COOLING CONDENSATION SYSTEM | authKW | 525614 | 3% | 62% | 8 |
2 | EFFICIENCY GAIN PRODUCT | authKW | 427066 | 1% | 100% | 4 |
3 | ZNO GAN | authKW | 341652 | 1% | 80% | 4 |
4 | SEMICOND LIGHTING TECHNOL RD | address | 266912 | 2% | 50% | 5 |
5 | ARTIFICIAL MICRO NANO STRUCTMINIST EDU | address | 213533 | 1% | 100% | 2 |
6 | GAN TEMPLATE | authKW | 213533 | 1% | 100% | 2 |
7 | ZNO BASED PHOTODETECTORS | authKW | 213533 | 1% | 100% | 2 |
8 | ZNO P GAN HETEROJUNCTION | authKW | 213533 | 1% | 100% | 2 |
9 | PHOTOELECTROCHEMICAL OXIDATION METHOD | authKW | 213529 | 1% | 50% | 4 |
10 | ADV OPTOELECT TECHNOL ENERGY TECHNOL | address | 106767 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 2830 | 63% | 0% | 180 |
2 | Nanoscience & Nanotechnology | 1051 | 21% | 0% | 60 |
3 | Materials Science, Multidisciplinary | 995 | 42% | 0% | 120 |
4 | Optics | 530 | 19% | 0% | 54 |
5 | Materials Science, Coatings & Films | 385 | 9% | 0% | 25 |
6 | Physics, Condensed Matter | 311 | 19% | 0% | 54 |
7 | Engineering, Electrical & Electronic | 80 | 12% | 0% | 35 |
8 | Chemistry, Physical | 59 | 13% | 0% | 36 |
9 | Chemistry, Multidisciplinary | 47 | 11% | 0% | 32 |
10 | Crystallography | 24 | 3% | 0% | 9 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SEMICOND LIGHTING TECHNOL RD | 266912 | 2% | 50% | 5 |
2 | ARTIFICIAL MICRO NANO STRUCTMINIST EDU | 213533 | 1% | 100% | 2 |
3 | ADV OPTOELECT TECHNOL ENERGY TECHNOL | 106767 | 0% | 100% | 1 |
4 | ELECT SCI TECHNOLMINIST EDUC CHINA | 106767 | 0% | 100% | 1 |
5 | MICROELE ON SEMICOND DEVICES | 106767 | 0% | 100% | 1 |
6 | MOE ARTIFCIAL MICRO NANO STRUCT | 106767 | 0% | 100% | 1 |
7 | MOE ARTIFCIAL MICRO NANOSTRUCT | 106767 | 0% | 100% | 1 |
8 | NANOSCI ADV MAT ENGN | 106767 | 0% | 100% | 1 |
9 | NAT SCI DEMOKRITOS | 106767 | 0% | 100% | 1 |
10 | PHOTON AND OPTOELECT | 106767 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | APPLIED PHYSICS LETTERS | 2025 | 16% | 0% | 46 |
2 | APPLIED PHYSICS EXPRESS | 1859 | 3% | 0% | 8 |
3 | NANOSCALE RESEARCH LETTERS | 1563 | 3% | 0% | 8 |
4 | IEEE PHOTONICS TECHNOLOGY LETTERS | 934 | 4% | 0% | 12 |
5 | APPLIED PHYSICS B-LASERS AND OPTICS | 688 | 2% | 0% | 7 |
6 | APL MATERIALS | 652 | 1% | 0% | 2 |
7 | JOURNAL OF LUMINESCENCE | 551 | 3% | 0% | 8 |
8 | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 420 | 1% | 0% | 2 |
9 | ELECTRONIC MATERIALS LETTERS | 407 | 1% | 0% | 2 |
10 | JOURNAL OF ELECTRONIC MATERIALS | 386 | 2% | 0% | 6 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | ECHRESH, A , CHEY, CO , SHOUSHTARI, MZ , NUR, O , WILLANDER, M , (2014) TUNING THE EMISSION OF ZNO NANORODS BASED LIGHT EMITTING DIODES USING AG DOPING.JOURNAL OF APPLIED PHYSICS. VOL. 116. ISSUE 19. P. - | 23 | 66% | 6 |
2 | JEONG, S , KIM, H , (2016) HIGH LIGHT OUTPUT EFFICIENCY OF N-ZNO/P-GAN HETEROJUNCTION LIGHT-EMITTING DIODES FABRICATED WITH A MGF2 ELECTRON-BLOCKING LAYER.APPLIED PHYSICS EXPRESS. VOL. 9. ISSUE 1. P. - | 18 | 75% | 0 |
3 | FU, QM , CAO, W , LI, GW , LIN, ZD , CHEN, Z , XU, CB , TU, YF , MA, ZB , (2014) BLUE/GREEN ELECTROLUMINESCENCE FROM A ZNO NANORODS/P-GAN HETEROJ UNCTION LIGHT EMITTING DIODE UNDER DIFFERENT REVERSE BIAS.APPLIED SURFACE SCIENCE. VOL. 293. ISSUE . P. 225-228 | 16 | 70% | 15 |
4 | JIANG, JY , ZHANG, YT , CHI, C , SHI, ZF , YAN, L , LI, PC , ZHANG, BL , DU, GT , (2016) IMPROVED ULTRAVIOLET EMISSION PERFORMANCE FROM POLARIZATION-ENGINEERED N-ZNO/P-GAN HETEROJUNCTION DIODE.APPLIED PHYSICS LETTERS. VOL. 108. ISSUE 6. P. - | 16 | 67% | 0 |
5 | ZHANG, LC , LI, QS , QU, C , ZHANG, ZJ , HUANG, RZ , ZHAO, FZ , (2013) WHITE ELECTROLUMINESCENCE FROM ZNO NANORODS/P-GAN HETEROJUNCTION LIGHT-EMITTING DIODES UNDER REVERSE BIAS.JOURNAL OF OPTICS. VOL. 15. ISSUE 2. P. - | 16 | 67% | 6 |
6 | ALNOOR, H , POZINA, G , KHRANOVSKYY, V , LIU, XJ , IANDOLO, D , WILLANDER, M , NUR, O , (2016) INFLUENCE OF ZNO SEED LAYER PRECURSOR MOLAR RATIO ON THE DENSITY OF INTERFACE DEFECTS IN LOW TEMPERATURE AQUEOUS CHEMICALLY SYNTHESIZED ZNO NANORODS/GAN LIGHT-EMITTING DIODES.JOURNAL OF APPLIED PHYSICS. VOL. 119. ISSUE 16. P. - | 17 | 55% | 1 |
7 | CHEN, XY , NG, AMC , FANG, F , NG, YH , DJURISIC, AB , TAM, HL , CHEAH, KW , GWO, S , CHAN, WK , FONG, PWK , ET AL (2011) ZNO NANOROD/GAN LIGHT-EMITTING DIODES: THE ORIGIN OF YELLOW AND VIOLET EMISSION BANDS UNDER REVERSE AND FORWARD BIAS.JOURNAL OF APPLIED PHYSICS. VOL. 110. ISSUE 9. P. - | 23 | 44% | 16 |
8 | JEONG, S , KIM, H , (2015) ENHANCED PERFORMANCE CHARACTERISTICS OF N-ZNO/P-GAN HETEROJUNCTION LIGHT-EMITTING DIODES BY FORMING EXCELLENT OHMIC CONTACT TO P-GAN.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. VOL. 39. ISSUE . P. 771 -774 | 15 | 65% | 0 |
9 | MO, XM , FANG, GJ , LONG, H , LI, SZ , HUANG, HH , WANG, HN , LIU, YH , MENG, XQ , ZHANG, YP , PAN, CX , (2013) NEAR-ULTRAVIOLET LIGHT-EMITTING DIODES REALIZED FROM N-ZNO NANOROD/P-GAN DIRECT-BONDING HETEROSTRUCTURES.JOURNAL OF LUMINESCENCE. VOL. 137. ISSUE . P. 116 -120 | 17 | 53% | 19 |
10 | WANG, X , GAN, XW , ZHANG, GZ , SU, X , ZHENG, MJ , AI, ZW , WU, H , LIU, C , (2017) THE FUNCTION OF AN IN0.17AL0.83N INTERLAYER IN N-ZNO/IN0.17AL0.83N/P-GAN HETEROJUNCTIONS.APPLIED SURFACE SCIENCE. VOL. 393. ISSUE . P. 221 -224 | 15 | 58% | 0 |
Classes with closest relation at Level 1 |