Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
27599 | 226 | 23.0 | 32% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
47 | 3 | PHYSICS, APPLIED//JOURNAL OF CRYSTAL GROWTH//PHYSICS, CONDENSED MATTER | 93961 |
2384 | 2 | IR LASERS//OPT SENSORS SPECT//SOVIET PHYSICS SEMICONDUCTORS-USSR | 4257 |
27599 | 1 | MULTIPHONON RECOMBINATION//COHERENT CAPTURE//CONTINUED FRACTIONS IN BANACH ALGEBRAS | 226 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | MULTIPHONON RECOMBINATION | authKW | 405337 | 1% | 100% | 3 |
2 | COHERENT CAPTURE | authKW | 270225 | 1% | 100% | 2 |
3 | CONTINUED FRACTIONS IN BANACH ALGEBRAS | authKW | 270225 | 1% | 100% | 2 |
4 | GEOMETRIC MATRIX MEANS | authKW | 270225 | 1% | 100% | 2 |
5 | PRINGSHEIM TYPE CONVERGENCE CRITERION | authKW | 270225 | 1% | 100% | 2 |
6 | DEFECT REACTION | authKW | 166286 | 2% | 31% | 4 |
7 | 2D CYLINDRICAL GEOMETRY | authKW | 135112 | 0% | 100% | 1 |
8 | 2D HARTREE FOCK | authKW | 135112 | 0% | 100% | 1 |
9 | A S UFRAFA GRP | address | 135112 | 0% | 100% | 1 |
10 | AFA GRPA S UFR | address | 135112 | 0% | 100% | 1 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Condensed Matter | 1045 | 36% | 0% | 82 |
2 | Physics, Multidisciplinary | 436 | 21% | 0% | 48 |
3 | Physics, Atomic, Molecular & Chemical | 186 | 12% | 0% | 28 |
4 | Chemistry, Physical | 89 | 16% | 0% | 36 |
5 | Physics, Applied | 24 | 10% | 0% | 22 |
6 | Physics, Mathematical | 11 | 3% | 0% | 6 |
7 | Optics | 8 | 4% | 0% | 9 |
8 | Mathematics | 7 | 4% | 0% | 9 |
9 | Energy & Fuels | 7 | 3% | 0% | 6 |
10 | Materials Science, Ceramics | 5 | 1% | 0% | 3 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | A S UFRAFA GRP | 135112 | 0% | 100% | 1 |
2 | AFA GRPA S UFR | 135112 | 0% | 100% | 1 |
3 | FIS IGCE | 45036 | 0% | 33% | 1 |
4 | PL STOCHAST OPERAT | 20783 | 1% | 8% | 2 |
5 | CHRISTIAN DOPPLER TCAD | 13509 | 0% | 10% | 1 |
6 | IGCE | 8243 | 2% | 2% | 4 |
7 | CONDENSED MATTER SECT | 3069 | 0% | 2% | 1 |
8 | THEORET PHYS SYNERGET | 2873 | 0% | 2% | 1 |
9 | CRETE QUANTUM COMPLEX NANOTECHNOL | 2250 | 0% | 2% | 1 |
10 | IFGW | 1581 | 1% | 1% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SOLAR CELLS | 5092 | 3% | 1% | 6 |
2 | PHYSICS AND CHEMISTRY OF LIQUIDS | 4714 | 4% | 0% | 8 |
3 | JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 2714 | 4% | 0% | 10 |
4 | JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1692 | 7% | 0% | 16 |
5 | PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1335 | 6% | 0% | 14 |
6 | JOURNAL OF APPROXIMATION THEORY | 981 | 2% | 0% | 5 |
7 | LECTURE NOTES IN PHYSICS | 731 | 1% | 0% | 3 |
8 | JOURNAL OF LUMINESCENCE | 701 | 4% | 0% | 8 |
9 | SCIENTIA SINICA | 667 | 0% | 0% | 1 |
10 | CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES | 635 | 0% | 0% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | SHINOZUKA, Y , WAKITA, M , SUZUKI, K , (2012) PHONON-KICK MECHANISM FOR DEFECT REACTIONS IN SEMICONDUCTORS.JAPANESE JOURNAL OF APPLIED PHYSICS. VOL. 51. ISSUE 11. P. - | 13 | 72% | 0 |
2 | MACEDO, LA , LAGOS, RE , (2002) ELECTRONIC CORRELATIONS FOR A TWO-LEVEL DIMER: DYNAMICAL SUSCEPTIBILITIES.PHYSICA B-CONDENSED MATTER. VOL. 312. ISSUE . P. 564-565 | 8 | 67% | 0 |
3 | PASSLER, R , (1989) COMPARISON BETWEEN STATIC AND ADIABATIC COUPLING MECHANISMS FOR NONRADIATIVE MULTIPHONON TRANSITIONS IN SEMICLASSICAL APPROXIMATION .1. TUNNELLING AT SMALL RELAXATION.CZECHOSLOVAK JOURNAL OF PHYSICS. VOL. 39. ISSUE 2. P. 155-195 | 11 | 79% | 1 |
4 | DENNER, V , WAGNER, M , (1984) STATIC AND ADIABATIC APPROACHES TO NON-RADIATIVE MULTIPHONON TRANSITIONS - CORRECT TRANSITION MATRIX-ELEMENTS OF ORDER-DELTA.JOURNAL OF PHYSICS C-SOLID STATE PHYSICS. VOL. 17. ISSUE 1. P. 153-172 | 10 | 100% | 9 |
5 | MULLONI, V , PEDRON, D , BOZIO, R , (1996) EFFECTS OF THE MIXING OF CHARGE TRANSFER AND MOLECULAR EXCITATIONS ON THE RESONANCE RAMAN PROPERTIES OF SYMMETRIC RADICAL DIMERS.CHEMICAL PHYSICS LETTERS. VOL. 263. ISSUE 1-2. P. 331-337 | 7 | 78% | 1 |
6 | SHINOZUKA, Y , (2001) MECHANISMS OF CAPTURE- AND RECOMBINATION-ENHANCED DEFECT REACTIONS IN SEMICONDUCTORS.PHYSICA B-CONDENSED MATTER. VOL. 308. ISSUE . P. 506 -509 | 6 | 75% | 5 |
7 | MACEDO, LA , LAGOS, RE , (2001) ELECTRONIC CORRELATIONS IN A TWO-LEVEL DIMER.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS. VOL. 226. ISSUE . P. 105-106 | 7 | 64% | 1 |
8 | KANG, YQ , ZHENG, JH , TAN, HS , NG, SC , (1996) CHARGE-STATE EFFECTS OF DEEP CENTRES IN SEMICONDUCTORS ON NON-RADIATIVE CAPTURE OF CARRIERS BY MULTIPHONON PROCESSES.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. VOL. 63. ISSUE 1. P. 37 -43 | 6 | 86% | 0 |
9 | PASSLER, R , PETTERSSON, H , GRIMMEISS, HG , SCHMALZ, K , (1997) CORRELATION OF ELECTRICAL AND OPTICAL PROPERTIES OF THE VANADIUM-RELATED C LEVEL IN SILICON.PHYSICAL REVIEW B. VOL. 55. ISSUE 7. P. 4312-4322 | 10 | 48% | 10 |
10 | KLINGER, MI , TARASKIN, SN , (1993) THERMALLY ACTIVATED CONFIGURATIONAL TUNNELING AT TRAPPING AND RECOMBINATION IN GLASSY SEMICONDUCTORS.CHEMICAL PHYSICS. VOL. 170. ISSUE 3. P. 437-443 | 6 | 86% | 0 |
Classes with closest relation at Level 1 |