Class information for:
Level 1: PHASE CHANGE MEMORY//GE2SB2TE5//PHASE CHANGE MEMORY PCM

Basic class information
Class id #P Avg. number of
references		 Database coverage
of references
858 3002 23.5 70%


Bar chart of Publication_year

Last years might be incomplete

Hierarchy of classes
The table includes all classes above and classes immediately below the current class.


Cluster id Level Cluster label #P
2 4 MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER 2836879
560 3       CHALCOGENIDE GLASSES//CHALCOGENIDES//PHASE CHANGE MEMORY 17255
1542 2             PHASE CHANGE MEMORY//OPTICAL DISK//GE2SB2TE5 7441
858 1                   PHASE CHANGE MEMORY//GE2SB2TE5//PHASE CHANGE MEMORY PCM 3002

Terms with highest relevance score


rank Term termType Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 PHASE CHANGE MEMORY authKW 1984908 9% 75% 261
2 GE2SB2TE5 authKW 1041605 4% 94% 109
3 PHASE CHANGE MEMORY PCM authKW 751898 3% 81% 91
4 GE SB TE authKW 635166 2% 87% 72
5 PHASE CHANGE MATERIALS authKW 437629 6% 22% 194
6 STATE FUNCT MAT INFORMAT address 409238 9% 15% 262
7 SHANGHAI MICROSYST INFORMAT TECHNOL address 370588 11% 11% 332
8 ANTIMONY COMPOUNDS authKW 293566 2% 53% 54
9 PCRAM authKW 237567 1% 81% 29
10 GERMANIUM COMPOUNDS authKW 223703 2% 34% 65

Web of Science journal categories


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with term
in class
1 Physics, Applied 27916 61% 0% 1835
2 Materials Science, Multidisciplinary 5274 31% 0% 931
3 Physics, Condensed Matter 4465 22% 0% 650
4 Nanoscience & Nanotechnology 2180 10% 0% 298
5 Materials Science, Coatings & Films 1883 6% 0% 184
6 Engineering, Electrical & Electronic 885 12% 0% 374
7 Materials Science, Ceramics 809 4% 0% 108
8 Optics 223 5% 0% 152
9 Chemistry, Physical 184 9% 0% 257
10 Metallurgy & Metallurgical Engineering 134 3% 0% 97

Address terms


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 STATE FUNCT MAT INFORMAT 409238 9% 15% 262
2 SHANGHAI MICROSYST INFORMAT TECHNOL 370588 11% 11% 332
3 PHYS IA 1 204709 1% 54% 37
4 IBM MACRONIX PCRAM JOINT PROJECT 172887 1% 100% 17
5 SHANGHAI NANOFABRICAT TECHNOL MEMORY 134597 0% 88% 15
6 SEMICOND MAT DEVICES 97152 1% 33% 29
7 FUNCT SEMICOND FILM ENGN TECHNOL 92968 1% 57% 16
8 STATE FUNCT MAT INFORMAT NANOTECHNOL LA 92451 0% 91% 10
9 UNITA AGRATE BRIANZA 72377 0% 65% 11
10 MAT SCI ANAL TECHNOL 67792 0% 67% 10

Journals


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class
1 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 16287 7% 1% 224
2 APPLIED PHYSICS LETTERS 10597 11% 0% 344
3 JOURNAL OF APPLIED PHYSICS 6158 9% 0% 260
4 JAPANESE JOURNAL OF APPLIED PHYSICS 4953 3% 1% 89
5 JOURNAL OF NON-CRYSTALLINE SOLIDS 3086 3% 0% 85
6 IEEE ELECTRON DEVICE LETTERS 3083 2% 1% 53
7 IEEE TRANSACTIONS ON ELECTRON DEVICES 2389 2% 0% 61
8 ECS SOLID STATE LETTERS 2277 0% 3% 9
9 JOURNAL OF OVONIC RESEARCH 2029 0% 3% 7
10 JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS 1791 1% 1% 31

Author Key Words


Rank Term Chi square Shr. of publ. in
class containing
term		 Class's shr. of
term's tot. occurrences		 #P with
term in
class		 LCSH search Wikipedia search
1 PHASE CHANGE MEMORY 1984908 9% 75% 261 Search PHASE+CHANGE+MEMORY Search PHASE+CHANGE+MEMORY
2 GE2SB2TE5 1041605 4% 94% 109 Search GE2SB2TE5 Search GE2SB2TE5
3 PHASE CHANGE MEMORY PCM 751898 3% 81% 91 Search PHASE+CHANGE+MEMORY+PCM Search PHASE+CHANGE+MEMORY+PCM
4 GE SB TE 635166 2% 87% 72 Search GE+SB+TE Search GE+SB+TE
5 PHASE CHANGE MATERIALS 437629 6% 22% 194 Search PHASE+CHANGE+MATERIALS Search PHASE+CHANGE+MATERIALS
6 ANTIMONY COMPOUNDS 293566 2% 53% 54 Search ANTIMONY+COMPOUNDS Search ANTIMONY+COMPOUNDS
7 PCRAM 237567 1% 81% 29 Search PCRAM Search PCRAM
8 GERMANIUM COMPOUNDS 223703 2% 34% 65 Search GERMANIUM+COMPOUNDS Search GERMANIUM+COMPOUNDS
9 PHASE CHANGE 218981 6% 12% 184 Search PHASE+CHANGE Search PHASE+CHANGE
10 PHASE CHANGE OPTICAL DISK 198884 1% 67% 29 Search PHASE+CHANGE+OPTICAL+DISK Search PHASE+CHANGE+OPTICAL+DISK

Core articles
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c:
(1) Number of references referring to publications in the class.
(2) Share of total number of active references referring to publications in the class.
(3) Age of the article. New articles get higher score than old articles.
(4) Citation rate, normalized to year.


Rank Reference # ref. in
cl.		 Shr. of ref. in
cl.		 Citations
1 LENCER, D , SALINGA, M , WUTTIG, M , (2011) DESIGN RULES FOR PHASE-CHANGE MATERIALS IN DATA STORAGE APPLICATIONS.ADVANCED MATERIALS. VOL. 23. ISSUE 18. P. 2030 -2058 152 80% 148
2 BURR, GW , BREITWISCH, MJ , FRANCESCHINI, M , GARETTO, D , GOPALAKRISHNAN, K , JACKSON, B , KURDI, B , LAM, C , LASTRAS, LA , PADILLA, A , ET AL (2010) PHASE CHANGE MEMORY TECHNOLOGY.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. VOL. 28. ISSUE 2. P. 223 -262 111 84% 302
3 DERINGER, VL , DRONSKOWSKI, R , WUTTIG, M , (2015) MICROSCOPIC COMPLEXITY IN PHASE-CHANGE MATERIALS AND ITS ROLE FOR APPLICATIONS.ADVANCED FUNCTIONAL MATERIALS. VOL. 25. ISSUE 40. P. 6343 -6359 113 75% 4
4 RAOUX, S , WELNIC, W , IELMINI, D , (2010) PHASE CHANGE MATERIALS AND THEIR APPLICATION TO NONVOLATILE MEMORIES.CHEMICAL REVIEWS. VOL. 110. ISSUE 1. P. 240 -267 81 72% 254
5 WONG, HSP , RAOUX, S , KIM, S , LIANG, JL , REIFENBERG, JP , RAJENDRAN, B , ASHEGHI, M , GOODSON, KE , (2010) PHASE CHANGE MEMORY.PROCEEDINGS OF THE IEEE. VOL. 98. ISSUE 12. P. 2201 -2227 63 83% 346
6 WUTTIG, M , YAMADA, N , (2007) PHASE-CHANGE MATERIALS FOR REWRITEABLE DATA STORAGE.NATURE MATERIALS. VOL. 6. ISSUE 11. P. 824-832 38 79% 1106
7 ZHANG, W , DERINGER, VL , DRONSKOWSKI, R , MAZZARELLO, R , MA, E , WUTTIG, M , (2015) DENSITY-FUNCTIONAL THEORY GUIDED ADVANCES IN PHASE-CHANGE MATERIALS AND MEMORIES.MRS BULLETIN. VOL. 40. ISSUE 10. P. 856 -869 65 86% 1
8 BOGOSLOVSKIY, NA , TSENDIN, KD , (2012) PHYSICS OF SWITCHING AND MEMORY EFFECTS IN CHALCOGENIDE GLASSY SEMICONDUCTORS.SEMICONDUCTORS. VOL. 46. ISSUE 5. P. 559 -590 65 86% 16
9 SIEGRIST, T , MERKELBACH, P , WUTTIG, M , (2012) PHASE CHANGE MATERIALS: CHALLENGES ON THE PATH TO A UNIVERSAL STORAGE DEVICE.ANNUAL REVIEW OF CONDENSED MATTER PHYSICS, VOL 3. VOL. 3. ISSUE . P. 215 -237 57 84% 39
10 RAOUX, S , BURR, GW , BREITWISCH, MJ , RETTNER, CT , CHEN, YC , SHELBY, RM , SALINGA, M , KREBS, D , CHEN, SH , LUNG, HL , ET AL (2008) PHASE-CHANGE RANDOM ACCESS MEMORY: A SCALABLE TECHNOLOGY.IBM JOURNAL OF RESEARCH AND DEVELOPMENT. VOL. 52. ISSUE 4-5. P. 465 -479 40 93% 256

Classes with closest relation at Level 1


Rank Class id link
1 17909 SUPER RENS//MASTERING//SUPER RESOLUTION NEAR FIELD STRUCTURE
2 23885 AZO AZOMETHINE//WRITE ONCE//WRITE STRATEGY
3 32752 AS10GE15TE75 PELLETS//ELECTRICAL FIELD RECORDING//IONIZATION IN ELECTRIC FIELD
4 36353 ARSENIC TELLURIDE//CHARLES GERHARDT ICG//SUPER TECN C2TN
5 1327 CHALCOGENIDE GLASSES//CHALCOGENIDES//CRYSTALLIZATION KINETICS
6 13362 FLASH TRANSLATION LAYER//NAND FLASH MEMORY//FLASH MEMORY
7 17468 MINI-MICRO SYSTEMS//LARGE TRANSMITTANCE CHANGES//HIGH DENSITY OPTICAL RECORDING FILMS
8 8412 SOLID IMMERSION LENS//INFORMAT STORAGE DEVICE//NEAR FIELD RECORDING
9 6354 JOURNAL OF NON-CRYSTALLINE SOLIDS//GCR//CHALCOGENIDE GLASSES
10 1247 CHALCOGENIDE GLASSES//AMORPHOUS CHALCOGENIDES//AMORPHOUS CHALCOGENIDE FILMS

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