Class information for: |
Basic class information |
| Class id | #P | Avg. number of references |
Database coverage of references |
|---|---|---|---|
| 32331 | 140 | 13.0 | 36% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
| Cluster id | Level | Cluster label | #P |
|---|---|---|---|
| 5 | 4 | CHEMISTRY, ORGANIC//CHEMISTRY, INORGANIC & NUCLEAR//CHEMISTRY, MULTIDISCIPLINARY | 1745167 |
| 151 | 3 | CHEMISTRY, INORGANIC & NUCLEAR//PHOSPHORUS SULFUR AND SILICON AND THE RELATED ELEMENTS//CHEMISTRY, ORGANIC | 62986 |
| 2242 | 2 | ORGANOTINIV//ORGANOTIN//ORGANOTINIV CARBOXYLATES | 4723 |
| 32331 | 1 | CL IMAGE CONTRAST//ELECTRO PHYSICAL MEASUREMENTS//FINE DISPERSED STRUCTURE | 140 |
Terms with highest relevance score |
| rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|---|
| 1 | CL IMAGE CONTRAST | authKW | 218111 | 1% | 100% | 1 |
| 2 | ELECTRO PHYSICAL MEASUREMENTS | authKW | 218111 | 1% | 100% | 1 |
| 3 | FINE DISPERSED STRUCTURE | authKW | 218111 | 1% | 100% | 1 |
| 4 | GREEN LASER HETEROSTRUCTURES | authKW | 218111 | 1% | 100% | 1 |
| 5 | MULTILAYERS SEMICONDUCTORS NANOSTRUCTURES | authKW | 218111 | 1% | 100% | 1 |
| 6 | ON P TYPE AND ON N TYPE SI | authKW | 218111 | 1% | 100% | 1 |
| 7 | RANDOM VALUE | authKW | 218111 | 1% | 100% | 1 |
| 8 | THE STRUCTURE OF SI SIO2 | authKW | 218111 | 1% | 100% | 1 |
| 9 | PHOTOELECTRET | authKW | 124632 | 1% | 29% | 2 |
| 10 | BETA TIN STRUCTURE | authKW | 109055 | 1% | 50% | 1 |
Web of Science journal categories |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | Physics, Condensed Matter | 653 | 36% | 0% | 51 |
| 2 | Physics, Applied | 260 | 29% | 0% | 41 |
| 3 | Multidisciplinary Sciences | 148 | 6% | 0% | 8 |
| 4 | Physics, Multidisciplinary | 138 | 16% | 0% | 22 |
| 5 | Materials Science, Multidisciplinary | 94 | 21% | 0% | 29 |
| 6 | Microscopy | 90 | 3% | 0% | 4 |
| 7 | Materials Science, Coatings & Films | 56 | 5% | 0% | 7 |
| 8 | Spectroscopy | 25 | 4% | 0% | 6 |
| 9 | Chemistry, Multidisciplinary | 24 | 11% | 0% | 16 |
| 10 | Crystallography | 9 | 3% | 0% | 4 |
Address terms |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | PL MINERAL RADIOGEOCHEM | 31157 | 1% | 14% | 1 |
| 2 | ARIZONA NANOELECT | 21809 | 1% | 10% | 1 |
| 3 | IOFFE PHYSICAL TECH | 15578 | 1% | 7% | 1 |
| 4 | AF IOFFE PHYSICOTECH | 10155 | 11% | 0% | 16 |
| 5 | AF IOFFE | 6057 | 1% | 3% | 1 |
| 6 | AF IOFFE PHYS TECH | 5619 | 6% | 0% | 9 |
| 7 | INTEGRATED CIRCUIT FAILURE ANAL RELIABIL | 3253 | 1% | 1% | 1 |
| 8 | GALKIN PHYSICOTECH | 2691 | 1% | 1% | 1 |
| 9 | FOCK PHYS | 2063 | 1% | 0% | 2 |
| 10 | MICROSTRUCT ANAL UNIT | 1590 | 1% | 1% | 1 |
Journals |
| Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
|---|---|---|---|---|---|
| 1 | DOKLADY AKADEMII NAUK BELARUSI | 4855 | 6% | 0% | 8 |
| 2 | SEMICONDUCTORS | 3911 | 8% | 0% | 11 |
| 3 | UKRAINSKII FIZICHESKII ZHURNAL | 3242 | 5% | 0% | 7 |
| 4 | SOVIET MICROELECTRONICS | 2914 | 1% | 1% | 2 |
| 5 | PHYSICS OF THE SOLID STATE | 2667 | 7% | 0% | 10 |
| 6 | IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA | 1096 | 4% | 0% | 5 |
| 7 | VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 2 KHIMIYA | 990 | 2% | 0% | 3 |
| 8 | SOLID STATE PHENOMENA | 887 | 2% | 0% | 3 |
| 9 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 868 | 6% | 0% | 9 |
| 10 | ACTA PHYSICA HUNGARICA | 850 | 1% | 0% | 1 |
Author Key Words |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
| Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
|---|---|---|---|---|
| 1 | BARABAN, AP , DMITRIEV, VA , PETROV, YV , TIMOFEEVA, KA , (2012) ELECTRON-EXCITED LUMINESCENCE OF SIO2 LAYERS ON SILICON.PHYSICS OF THE SOLID STATE. VOL. 54. ISSUE 6. P. 1149-1152 | 5 | 100% | 0 |
| 2 | PANDEY, N , SRIVASTAVA, RK , PRAKASH, SG , (2012) STUDY OF PHOTOELECTRET EFFECT IN DYSPROSIUM DOPED ZINC OXIDE.INDIAN JOURNAL OF PURE & APPLIED PHYSICS. VOL. 50. ISSUE 4. P. 260-264 | 4 | 100% | 3 |
| 3 | ZAMORYANSKAYA, MV , SOKOLOV, VI , (2007) CATHODOLUMINESCENCE STUDY OF SILICON OXIDE-SILICON INTERFACE.SEMICONDUCTORS. VOL. 41. ISSUE 4. P. 462-468 | 6 | 67% | 6 |
| 4 | KOLESNIKOVA, EV , ZAMORYANSKAYA, MV , (2009) SILICON NANOCLUSTERS FORMATION IN SILICON DIOXIDE BY HIGH POWER DENSITY ELECTRON BEAM.PHYSICA B-CONDENSED MATTER. VOL. 404. ISSUE 23-24. P. 4653-4656 | 4 | 80% | 5 |
| 5 | IVANOVA, EV , ZAMORYANSKAYA, MV , (2016) TRANSFORMATION OF POINT DEFECTS IN SILICON DIOXIDE DURING ANNEALING.PHYSICS OF THE SOLID STATE. VOL. 58. ISSUE 10. P. 1962 -1966 | 5 | 45% | 0 |
| 6 | ZAMORYANSKAYA, MV , TROFIMOV, AN , (2013) CATHODOLUMINESCENCE OF RADIATIVE CENTERS IN WIDE-BANDGAP MATERIALS.OPTICS AND SPECTROSCOPY. VOL. 115. ISSUE 1. P. 79-85 | 3 | 75% | 3 |
| 7 | ZAMORYANSKAYA, MV , KUZNETSOVA, YV , POPOVA, TB , SHAKHMIN, AA , VINOKUROV, DA , TROFIMOV, AN , (2010) STUDY OF SEMICONDUCTOR MULTILAYER STRUCTURES BY CATHODOLUMINESCENCE AND ELECTRON PROBE MICROANALYSIS.JOURNAL OF ELECTRONIC MATERIALS. VOL. 39. ISSUE 6. P. 620 -624 | 4 | 57% | 1 |
| 8 | SOKOLOV, RV , ZAMORYANSKAYA, MV , KOLESNIKOVA, EV , SOKOLOV, VI , (2007) EVOLUTION OF LUMINESCENCE PROPERTIES OF NATURAL OXIDE ON SILICON AND POROUS SILICON.SEMICONDUCTORS. VOL. 41. ISSUE 4. P. 482-486 | 4 | 57% | 4 |
| 9 | ZAMORYANSKAYA, MV , DOMRACHEVA, YV , SHAKHMIN, AA , SHUSTOV, DB , TROFIMOV, AN , KONNIKOV, SG , (2009) LOCAL CATHODOLUMINESCENCE STUDY OF DEFECTS IN SEMICONDUCTORS AND MULTILAYER STRUCTURES.PHYSICA B-CONDENSED MATTER. VOL. 404. ISSUE 23-24. P. 5042-5044 | 4 | 44% | 2 |
| 10 | KOLESNIKOVA, EV , SITNIKOVA, AA , SOKOLOV, VI , ZAMORYANSKAYA, MV , (2005) MODIFICATION OF SILICON OXIDE BY HIGH ENERGY ELECTRON BEAM.GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI. VOL. 108-109. ISSUE . P. 729-733 | 3 | 60% | 7 |
Classes with closest relation at Level 1 |