Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
2193 | 2326 | 16.7 | 72% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
10 | 4 | OPTICS//PHYSICS, PARTICLES & FIELDS//PHYSICS, MULTIDISCIPLINARY | 1131262 |
185 | 3 | IEEE PHOTONICS TECHNOLOGY LETTERS//OPTICS//JOURNAL OF LIGHTWAVE TECHNOLOGY | 56126 |
372 | 2 | SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS//VERTICAL CAVITY SURFACE EMITTING LASERS | 17248 |
2193 | 1 | QUANTUM WELL LASERS//SEMICONDUCTOR LASERS//IEEE JOURNAL OF QUANTUM ELECTRONICS | 2326 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | QUANTUM WELL LASERS | authKW | 265524 | 4% | 20% | 102 |
2 | SEMICONDUCTOR LASERS | authKW | 176272 | 10% | 6% | 235 |
3 | IEEE JOURNAL OF QUANTUM ELECTRONICS | journal | 112518 | 12% | 3% | 270 |
4 | CHARACTERISTIC TEMPERATURE | authKW | 56593 | 1% | 25% | 17 |
5 | ANTI GUIDING FACTOR | authKW | 52504 | 0% | 100% | 4 |
6 | MULTIQUANTUM WELL LASERS | authKW | 52504 | 0% | 100% | 4 |
7 | ALGAINAS | authKW | 48449 | 1% | 31% | 12 |
8 | DIFFERENTIAL GAIN | authKW | 42329 | 0% | 32% | 10 |
9 | MULTIPLE QUANTUM WELL LASERS | authKW | 39378 | 0% | 100% | 3 |
10 | STRAIN COMPENSATED MULTI QUANTUM WELLS | authKW | 39378 | 0% | 100% | 3 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 21961 | 62% | 0% | 1432 |
2 | Engineering, Electrical & Electronic | 16751 | 50% | 0% | 1155 |
3 | Optics | 15053 | 34% | 0% | 788 |
4 | Physics, Condensed Matter | 664 | 11% | 0% | 253 |
5 | Telecommunications | 270 | 3% | 0% | 81 |
6 | Crystallography | 170 | 3% | 0% | 69 |
7 | Physics, Multidisciplinary | 75 | 4% | 0% | 103 |
8 | Materials Science, Multidisciplinary | 26 | 6% | 0% | 146 |
9 | Nanoscience & Nanotechnology | 9 | 2% | 0% | 40 |
10 | Materials Science, Characterization, Testing | 3 | 0% | 0% | 7 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | ELECT FO ENGN TECHNOL | 26252 | 0% | 100% | 2 |
2 | NETWORK EXAMINAT TEAM | 26252 | 0% | 100% | 2 |
3 | TELECOMMUN S | 25208 | 1% | 8% | 23 |
4 | PHYS COMP | 14751 | 0% | 13% | 9 |
5 | ACT DEVICES | 13126 | 0% | 100% | 1 |
6 | ADV OPTOEECT | 13126 | 0% | 100% | 1 |
7 | BION PHOTON | 13126 | 0% | 100% | 1 |
8 | ELE ELE DEVICES | 13126 | 0% | 100% | 1 |
9 | ELECT ENGN TELECOMMUN TECHNOL ELE OMAGNE | 13126 | 0% | 100% | 1 |
10 | ELECT OPTICAL MAT SCI | 13126 | 0% | 100% | 1 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE JOURNAL OF QUANTUM ELECTRONICS | 112518 | 12% | 3% | 270 |
2 | IEEE PHOTONICS TECHNOLOGY LETTERS | 39135 | 9% | 1% | 220 |
3 | ELECTRONICS LETTERS | 24650 | 12% | 1% | 272 |
4 | APPLIED PHYSICS LETTERS | 20455 | 18% | 0% | 416 |
5 | IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 9068 | 2% | 1% | 53 |
6 | OPTICAL AND QUANTUM ELECTRONICS | 5222 | 2% | 1% | 40 |
7 | IEE PROCEEDINGS-J OPTOELECTRONICS | 4655 | 1% | 3% | 13 |
8 | IEE PROCEEDINGS-OPTOELECTRONICS | 3087 | 1% | 2% | 14 |
9 | JOURNAL OF APPLIED PHYSICS | 2645 | 7% | 0% | 152 |
10 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2317 | 2% | 0% | 38 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | QUANTUM WELL LASERS | 265524 | 4% | 20% | 102 | Search QUANTUM+WELL+LASERS | Search QUANTUM+WELL+LASERS |
2 | SEMICONDUCTOR LASERS | 176272 | 10% | 6% | 235 | Search SEMICONDUCTOR+LASERS | Search SEMICONDUCTOR+LASERS |
3 | CHARACTERISTIC TEMPERATURE | 56593 | 1% | 25% | 17 | Search CHARACTERISTIC+TEMPERATURE | Search CHARACTERISTIC+TEMPERATURE |
4 | ANTI GUIDING FACTOR | 52504 | 0% | 100% | 4 | Search ANTI+GUIDING+FACTOR | Search ANTI+GUIDING+FACTOR |
5 | MULTIQUANTUM WELL LASERS | 52504 | 0% | 100% | 4 | Search MULTIQUANTUM+WELL+LASERS | Search MULTIQUANTUM+WELL+LASERS |
6 | ALGAINAS | 48449 | 1% | 31% | 12 | Search ALGAINAS | Search ALGAINAS |
7 | DIFFERENTIAL GAIN | 42329 | 0% | 32% | 10 | Search DIFFERENTIAL+GAIN | Search DIFFERENTIAL+GAIN |
8 | MULTIPLE QUANTUM WELL LASERS | 39378 | 0% | 100% | 3 | Search MULTIPLE+QUANTUM+WELL+LASERS | Search MULTIPLE+QUANTUM+WELL+LASERS |
9 | STRAIN COMPENSATED MULTI QUANTUM WELLS | 39378 | 0% | 100% | 3 | Search STRAIN+COMPENSATED+MULTI+QUANTUM+WELLS | Search STRAIN+COMPENSATED+MULTI+QUANTUM+WELLS |
10 | TURN ON JITTER | 39378 | 0% | 100% | 3 | Search TURN+ON+JITTER | Search TURN+ON+JITTER |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | HILLMER, H , MARCINKEVICIUS, S , (1998) OPTICALLY DETECTED CARRIER TRANSPORT IN III/V SEMICONDUCTOR QW STRUCTURES: EXPERIMENTS, MODEL CALCULATIONS AND APPLICATIONS IN FAST 1.55 MU M LASER DEVICES.APPLIED PHYSICS B-LASERS AND OPTICS. VOL. 66. ISSUE 1. P. 1 -17 | 103 | 76% | 13 |
2 | AHN, D , CHUANG, SL , (1994) THE THEORY OF STRAINED-LAYER QUANTUM-WELL LASERS WITH BANDGAP RENORMALIZATION.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 30. ISSUE 2. P. 350-365 | 75 | 72% | 46 |
3 | THIJS, PJA , TIEMEIJER, LF , BINSMA, JJM , VANDONGEN, T , (1994) PROGRESS IN LONG-WAVELENGTH STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND AMPLIFIERS.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 30. ISSUE 2. P. 477-499 | 65 | 62% | 145 |
4 | RALSTON, JD , WEISSER, S , ESQUIVIAS, I , LARKINS, EC , ROSENZWEIG, J , TASKER, PJ , FLEISSNER, J , (1993) CONTROL OF DIFFERENTIAL GAIN, NONLINEAR GAIN, AND DAMPING FACTOR FOR HIGH-SPEED APPLICATION OF GAAS-BASED MQW LASERS.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 29. ISSUE 6. P. 1648-1659 | 51 | 81% | 84 |
5 | NAGARAJAN, R , ISHIKAWA, M , FUKUSHIMA, T , GEELS, RS , BOWERS, JE , (1992) HIGH-SPEED QUANTUM-WELL LASERS AND CARRIER TRANSPORT EFFECTS.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 28. ISSUE 10. P. 1990-2008 | 43 | 78% | 287 |
6 | THIJS, PJA , TIEMEIJER, LF , BINSMA, JJM , VANDONGEN, T , (1995) STRAINED-LAYER INGAAS(P) QUANTUM-WELL SEMICONDUCTOR-LASERS AND SEMICONDUCTOR-LASER AMPLIFIERS.PHILIPS JOURNAL OF RESEARCH. VOL. 49. ISSUE 3. P. 187-224 | 58 | 73% | 5 |
7 | FUKUSHIMA, T , NAGARAJAN, R , ISHIKAWA, M , BOWERS, JE , (1993) HIGH-SPEED DYNAMICS IN INP BASED MULTIPLE QUANTUM-WELL LASERS.JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. VOL. 32. ISSUE 1A. P. 70-83 | 49 | 91% | 20 |
8 | PHILLIPS, AF , SWEENEY, SJ , ADAMS, AR , THIJS, PJA , (1999) THE TEMPERATURE DEPENDENCE OF 1.3-AND 1.5-MU M COMPRESSIVELY STRAINED INGAAS(P) MQW SEMICONDUCTOR LASERS.IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS. VOL. 5. ISSUE 3. P. 401-412 | 37 | 80% | 101 |
9 | NAGARAJAN, R , (1994) CARRIER TRANSPORT EFFECTS IN QUANTUM-WELL LASERS - AN OVERVIEW.OPTICAL AND QUANTUM ELECTRONICS. VOL. 26. ISSUE 7. P. S647-S666 | 43 | 90% | 11 |
10 | OREILLY, EP , ADAMS, AR , (1994) BAND-STRUCTURE ENGINEERING IN STRAINED SEMICONDUCTOR-LASERS.IEEE JOURNAL OF QUANTUM ELECTRONICS. VOL. 30. ISSUE 2. P. 366-379 | 41 | 68% | 133 |
Classes with closest relation at Level 1 |