Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
106 | 4370 | 21.1 | 74% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
6 | 3 | PHYSICS, APPLIED//IEEE TRANSACTIONS ON ELECTRON DEVICES//SILICON | 155028 |
1125 | 2 | POROUS SILICON//ELECTROCHEMICAL ETCHING//POROUS SI | 9675 |
106 | 1 | POROUS SILICON//POROUS SI//STAIN ETCHING | 4370 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | POROUS SILICON | authKW | 2728245 | 22% | 40% | 978 |
2 | POROUS SI | authKW | 182333 | 1% | 41% | 63 |
3 | STAIN ETCHING | authKW | 93128 | 0% | 67% | 20 |
4 | PHOTOLUMINESCENCE | authKW | 64848 | 10% | 2% | 425 |
5 | IMMERSION PLATING | authKW | 55877 | 0% | 67% | 12 |
6 | IUT LANNION | address | 34918 | 0% | 50% | 10 |
7 | PRACT LIFE STUDIES | address | 31432 | 0% | 75% | 6 |
8 | SPARK PROCESSED SILICON | authKW | 31432 | 0% | 75% | 6 |
9 | ELECTROCHEMICAL ETCHING | authKW | 29954 | 1% | 11% | 38 |
10 | POROUS SILICON LAYERS | authKW | 29798 | 0% | 53% | 8 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 23411 | 47% | 0% | 2065 |
2 | Physics, Condensed Matter | 20955 | 37% | 0% | 1613 |
3 | Materials Science, Coatings & Films | 14532 | 13% | 0% | 588 |
4 | Materials Science, Multidisciplinary | 6070 | 28% | 0% | 1225 |
5 | Electrochemistry | 1100 | 5% | 0% | 212 |
6 | Optics | 824 | 7% | 0% | 311 |
7 | Nanoscience & Nanotechnology | 516 | 5% | 0% | 203 |
8 | Physics, Multidisciplinary | 471 | 6% | 0% | 284 |
9 | Chemistry, Physical | 388 | 10% | 0% | 417 |
10 | Materials Science, Ceramics | 210 | 2% | 0% | 76 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IUT LANNION | 34918 | 0% | 50% | 10 |
2 | PRACT LIFE STUDIES | 31432 | 0% | 75% | 6 |
3 | PHYS E16 | 23647 | 0% | 17% | 20 |
4 | IC DESIGN FABRICAT | 18798 | 0% | 17% | 16 |
5 | GEBZE MYO | 18626 | 0% | 67% | 4 |
6 | TECHNOL EDUC GRP | 15964 | 0% | 57% | 4 |
7 | SPECT RAMAN | 15871 | 0% | 45% | 5 |
8 | INSA CVLGREMAN UMR 7347 | 14548 | 0% | 42% | 5 |
9 | EQUIPE PHOTO THERM COMPOSANTS ELECT UR 99 13 22 | 13971 | 0% | 100% | 2 |
10 | GRP PHOTOVOLTAIQUE MAT SEMICOND | 13971 | 0% | 100% | 2 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | SEMICONDUCTORS | 21904 | 3% | 2% | 146 |
2 | THIN SOLID FILMS | 18411 | 7% | 1% | 312 |
3 | JOURNAL OF POROUS MATERIALS | 15832 | 1% | 4% | 63 |
4 | JOURNAL OF LUMINESCENCE | 14886 | 4% | 1% | 162 |
5 | APPLIED PHYSICS LETTERS | 9141 | 9% | 0% | 389 |
6 | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 8759 | 4% | 1% | 161 |
7 | PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 6458 | 1% | 3% | 28 |
8 | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 5217 | 2% | 1% | 75 |
9 | JOURNAL OF APPLIED PHYSICS | 5133 | 7% | 0% | 290 |
10 | APPLIED SURFACE SCIENCE | 4018 | 3% | 0% | 146 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | POROUS SILICON | 2728245 | 22% | 40% | 978 | Search POROUS+SILICON | Search POROUS+SILICON |
2 | POROUS SI | 182333 | 1% | 41% | 63 | Search POROUS+SI | Search POROUS+SI |
3 | STAIN ETCHING | 93128 | 0% | 67% | 20 | Search STAIN+ETCHING | Search STAIN+ETCHING |
4 | PHOTOLUMINESCENCE | 64848 | 10% | 2% | 425 | Search PHOTOLUMINESCENCE | Search PHOTOLUMINESCENCE |
5 | IMMERSION PLATING | 55877 | 0% | 67% | 12 | Search IMMERSION+PLATING | Search IMMERSION+PLATING |
6 | SPARK PROCESSED SILICON | 31432 | 0% | 75% | 6 | Search SPARK+PROCESSED+SILICON | Search SPARK+PROCESSED+SILICON |
7 | ELECTROCHEMICAL ETCHING | 29954 | 1% | 11% | 38 | Search ELECTROCHEMICAL+ETCHING | Search ELECTROCHEMICAL+ETCHING |
8 | POROUS SILICON LAYERS | 29798 | 0% | 53% | 8 | Search POROUS+SILICON+LAYERS | Search POROUS+SILICON+LAYERS |
9 | A SI H NANOBALL | 27942 | 0% | 100% | 4 | Search A+SI+H+NANOBALL | Search A+SI+H+NANOBALL |
10 | FREE STANDING POROUS SILICON | 27942 | 0% | 100% | 4 | Search FREE+STANDING+POROUS+SILICON | Search FREE+STANDING+POROUS+SILICON |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | CULLIS, AG , CANHAM, LT , CALCOTT, PDJ , (1997) THE STRUCTURAL AND LUMINESCENCE PROPERTIES OF POROUS SILICON.JOURNAL OF APPLIED PHYSICS. VOL. 82. ISSUE 3. P. 909 -965 | 441 | 86% | 1974 |
2 | BISI, O , OSSICINI, S , PAVESI, L , (2000) POROUS SILICON: A QUANTUM SPONGE STRUCTURE FOR SILICON BASED OPTOELECTRONICS.SURFACE SCIENCE REPORTS. VOL. 38. ISSUE 1-3. P. 1 -126 | 291 | 82% | 863 |
3 | KOROTCENKOV, G , CHO, BK , (2010) SILICON POROSIFICATION: STATE OF THE ART.CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES. VOL. 35. ISSUE 3. P. 153-260 | 245 | 45% | 49 |
4 | LOCKWOOD, DJ , (1994) OPTICAL-PROPERTIES OF POROUS SILICON.SOLID STATE COMMUNICATIONS. VOL. 92. ISSUE 1-2. P. 101 -112 | 124 | 96% | 206 |
5 | SAILOR, MJ , HEINRICH, JL , LAUERHAAS, JM , (1997) LUMINESCENT POROUS SILICON: SYNTHESIS, CHEMISTRY, AND APPLICATIONS.SEMICONDUCTOR NANOCLUSTERS- PHYSICAL, CHEMICAL, AND CATALYTIC ASPECTS. VOL. 103. ISSUE . P. 209 -235 | 100 | 88% | 25 |
6 | JUNG, KH , SHIH, S , KWONG, DL , (1993) DEVELOPMENTS IN LUMINESCENT POROUS SI.JOURNAL OF THE ELECTROCHEMICAL SOCIETY. VOL. 140. ISSUE 10. P. 3046 -3064 | 115 | 81% | 90 |
7 | MANILOV, AI , SKRYSHEVSKY, VA , (2013) HYDROGEN IN POROUS SILICON - A REVIEW.MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS. VOL. 178. ISSUE 15. P. 942 -955 | 102 | 52% | 5 |
8 | (2003) POROUS SILICON.LIGHT EMITTING SILICON FOR MICROPHOTONICS. VOL. 194. ISSUE . P. 75 -121 | 82 | 80% | 0 |
9 | KANEMITSU, Y , (1995) LIGHT-EMISSION FROM POROUS SILICON AND RELATED MATERIALS.PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS. VOL. 263. ISSUE 1. P. 1 -+ | 102 | 57% | 274 |
10 | PARKHUTIK, V , (1999) POROUS SILICON - MECHANISMS OF GROWTH AND APPLICATIONS.SOLID-STATE ELECTRONICS. VOL. 43. ISSUE 6. P. 1121 -1141 | 86 | 72% | 86 |
Classes with closest relation at Level 1 |