Class information for: |
Basic class information |
Class id | #P | Avg. number of references |
Database coverage of references |
---|---|---|---|
685 | 8241 | 27.8 | 74% |
Hierarchy of classes |
The table includes all classes above and classes immediately below the current class. |
Cluster id | Level | Cluster label | #P |
---|---|---|---|
2 | 4 | MATERIALS SCIENCE, MULTIDISCIPLINARY//PHYSICS, APPLIED//PHYSICS, CONDENSED MATTER | 2836879 |
685 | 3 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 8241 |
1754 | 2 | RESISTIVE SWITCHING//MEMRISTOR//RRAM | 6467 |
3618 | 2 | QUANTUM DOT CELLULAR AUTOMATA//QUANTUM DOT CELLULAR AUTOMATA QCA//MAJORITY GATE | 1237 |
4142 | 2 | PROGRAMA DOCTORADO FISICOQUIM MOL//SELECTIVE REMOVAL OF ATOMS//SEMIEMPIRICAL CI METHODS | 537 |
Terms with highest relevance score |
rank | Term | termType | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | authKW | 2221938 | 8% | 86% | 695 |
2 | MEMRISTOR | authKW | 1449826 | 7% | 70% | 559 |
3 | RRAM | authKW | 955031 | 3% | 92% | 280 |
4 | RESISTIVE RANDOM ACCESS MEMORY RRAM | authKW | 578777 | 2% | 96% | 163 |
5 | RERAM | authKW | 457272 | 2% | 88% | 141 |
6 | QUANTUM DOT CELLULAR AUTOMATA | authKW | 363243 | 1% | 97% | 101 |
7 | RESISTANCE SWITCHING | authKW | 314509 | 1% | 75% | 114 |
8 | RESISTIVE MEMORY | authKW | 300642 | 1% | 89% | 91 |
9 | QUANTUM DOT CELLULAR AUTOMATA QCA | authKW | 266833 | 1% | 97% | 74 |
10 | RESISTIVE RANDOM ACCESS MEMORY | authKW | 249801 | 1% | 92% | 73 |
Web of Science journal categories |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | Physics, Applied | 58831 | 54% | 0% | 4450 |
2 | Nanoscience & Nanotechnology | 32917 | 22% | 1% | 1799 |
3 | Materials Science, Multidisciplinary | 16368 | 33% | 0% | 2696 |
4 | Engineering, Electrical & Electronic | 14706 | 26% | 0% | 2162 |
5 | Physics, Condensed Matter | 5863 | 16% | 0% | 1297 |
6 | Computer Science, Hardware & Architecture | 1632 | 3% | 0% | 230 |
7 | Chemistry, Physical | 1227 | 11% | 0% | 927 |
8 | Chemistry, Multidisciplinary | 1052 | 10% | 0% | 850 |
9 | Materials Science, Coatings & Films | 783 | 3% | 0% | 222 |
10 | Physics, Multidisciplinary | 367 | 5% | 0% | 401 |
Address terms |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | NANOFABRICAT NOVEL DEVICES INTEGRATED TECHN | 78663 | 1% | 49% | 43 |
2 | ELECT OPTOELECT | 76816 | 0% | 51% | 41 |
3 | WERKSTOFFE ELEKTROTECH 2 | 74316 | 1% | 43% | 47 |
4 | PETER GRUNBERG 7 | 66117 | 0% | 71% | 25 |
5 | NANOFABRICAT NOVEL DEVICE INTEGRAT | 62765 | 0% | 63% | 27 |
6 | MAT ELECT ENGN INFORMAT TECHNOL 2 | 52583 | 0% | 57% | 25 |
7 | ITALIAN UNIV NANOELECT TEAM | 42307 | 0% | 57% | 20 |
8 | ICEAM | 41655 | 0% | 75% | 15 |
9 | MICROELECT | 41640 | 5% | 3% | 442 |
10 | THIN FILM NANO TECH | 40319 | 0% | 78% | 14 |
Journals |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
---|---|---|---|---|---|
1 | IEEE TRANSACTIONS ON NANOTECHNOLOGY | 75474 | 2% | 11% | 191 |
2 | IEEE ELECTRON DEVICE LETTERS | 47683 | 4% | 4% | 342 |
3 | APPLIED PHYSICS LETTERS | 26219 | 11% | 1% | 898 |
4 | ACM JOURNAL ON EMERGING TECHNOLOGIES IN COMPUTING SYSTEMS | 21515 | 0% | 15% | 39 |
5 | ORGANIC ELECTRONICS | 15914 | 2% | 3% | 130 |
6 | NANOTECHNOLOGY | 11625 | 2% | 2% | 193 |
7 | FLUCTUATION AND NOISE LETTERS | 11549 | 1% | 7% | 47 |
8 | IEEE TRANSACTIONS ON ELECTRON DEVICES | 7952 | 2% | 1% | 184 |
9 | ADVANCED ELECTRONIC MATERIALS | 7691 | 0% | 7% | 28 |
10 | MICROELECTRONIC ENGINEERING | 7022 | 2% | 1% | 141 |
Author Key Words |
Rank | Term | Chi square | Shr. of publ. in class containing term |
Class's shr. of term's tot. occurrences |
#P with term in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | RESISTIVE SWITCHING | 2221938 | 8% | 86% | 695 | Search RESISTIVE+SWITCHING | Search RESISTIVE+SWITCHING |
2 | MEMRISTOR | 1449826 | 7% | 70% | 559 | Search MEMRISTOR | Search MEMRISTOR |
3 | RRAM | 955031 | 3% | 92% | 280 | Search RRAM | Search RRAM |
4 | RESISTIVE RANDOM ACCESS MEMORY RRAM | 578777 | 2% | 96% | 163 | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM | Search RESISTIVE+RANDOM+ACCESS+MEMORY+RRAM |
5 | RERAM | 457272 | 2% | 88% | 141 | Search RERAM | Search RERAM |
6 | QUANTUM DOT CELLULAR AUTOMATA | 363243 | 1% | 97% | 101 | Search QUANTUM+DOT+CELLULAR+AUTOMATA | Search QUANTUM+DOT+CELLULAR+AUTOMATA |
7 | RESISTANCE SWITCHING | 314509 | 1% | 75% | 114 | Search RESISTANCE+SWITCHING | Search RESISTANCE+SWITCHING |
8 | RESISTIVE MEMORY | 300642 | 1% | 89% | 91 | Search RESISTIVE+MEMORY | Search RESISTIVE+MEMORY |
9 | QUANTUM DOT CELLULAR AUTOMATA QCA | 266833 | 1% | 97% | 74 | Search QUANTUM+DOT+CELLULAR+AUTOMATA+QCA | Search QUANTUM+DOT+CELLULAR+AUTOMATA+QCA |
10 | RESISTIVE RANDOM ACCESS MEMORY | 249801 | 1% | 92% | 73 | Search RESISTIVE+RANDOM+ACCESS+MEMORY | Search RESISTIVE+RANDOM+ACCESS+MEMORY |
Core articles |
The table includes core articles in the class. The following variables is taken into account for the relevance score of an article in a cluster c: (1) Number of references referring to publications in the class. (2) Share of total number of active references referring to publications in the class. (3) Age of the article. New articles get higher score than old articles. (4) Citation rate, normalized to year. |
Rank | Reference | # ref. in cl. |
Shr. of ref. in cl. |
Citations |
---|---|---|---|---|
1 | PAN, F , GAO, S , CHEN, C , SONG, C , ZENG, F , (2014) RECENT PROGRESS IN RESISTIVE RANDOM ACCESS MEMORIES: MATERIALS, SWITCHING MECHANISMS, AND PERFORMANCE.MATERIALS SCIENCE & ENGINEERING R-REPORTS. VOL. 83. ISSUE . P. 1 -59 | 355 | 91% | 205 |
2 | STEWART, DR , YANG, JJS , STRUKOV, DB , (2013) MEMRISTIVE DEVICES FOR COMPUTING.NATURE NANOTECHNOLOGY. VOL. 8. ISSUE 1. P. 13 -24 | 114 | 88% | 654 |
3 | LEE, JS , LEE, S , NOH, TW , (2015) RESISTIVE SWITCHING PHENOMENA: A REVIEW OF STATISTICAL PHYSICS APPROACHES.APPLIED PHYSICS REVIEWS. VOL. 2. ISSUE 3. P. - | 276 | 81% | 15 |
4 | HU, SG , WU, SY , JIA, WW , YU, Q , DENG, LJ , FU, YQ , LIU, Y , CHEN, TP , (2014) REVIEW OF NANOSTRUCTURED RESISTIVE SWITCHING MEMRISTOR AND ITS APPLICATIONS.NANOSCIENCE AND NANOTECHNOLOGY LETTERS. VOL. 6. ISSUE 9. P. 729 -757 | 242 | 88% | 6 |
5 | LIN, WP , LIU, SJ , GONG, T , ZHAO, Q , HUANG, W , (2014) POLYMER-BASED RESISTIVE MEMORY MATERIALS AND DEVICES.ADVANCED MATERIALS. VOL. 26. ISSUE 4. P. 570-606 | 132 | 95% | 110 |
6 | WONG, HSP , LEE, HY , YU, SM , CHEN, YS , WU, Y , CHEN, PS , LEE, B , CHEN, FT , TSAI, MJ , (2012) METAL-OXIDE RRAM.PROCEEDINGS OF THE IEEE. VOL. 100. ISSUE 6. P. 1951 -1970 | 94 | 95% | 473 |
7 | SIMANJUNTAK, FM , PANDA, D , WEI, KH , TSENG, TY , (2016) STATUS AND PROSPECTS OF ZNO-BASED RESISTIVE SWITCHING MEMORY DEVICES.NANOSCALE RESEARCH LETTERS. VOL. 11. ISSUE . P. - | 211 | 81% | 0 |
8 | BLASCO, J , GHENZI, N , SANE, J , LEVY, P , MIRANDA, E , (2015) EQUIVALENT CIRCUIT MODELING OF THE BISTABLE CONDUCTION CHARACTERISTICS IN ELECTROFORMED THIN DIELECTRIC FILMS.MICROELECTRONICS RELIABILITY. VOL. 55. ISSUE 1. P. 1 -14 | 147 | 94% | 2 |
9 | WASER, R , DITTMANN, R , STAIKOV, G , SZOT, K , (2009) REDOX-BASED RESISTIVE SWITCHING MEMORIES - NANOIONIC MECHANISMS, PROSPECTS, AND CHALLENGES.ADVANCED MATERIALS. VOL. 21. ISSUE 25-26. P. 2632 -+ | 70 | 60% | 1883 |
10 | MOHAMMAD, B , JAOUDE, MA , KUMAR, V , AL HOMOUZ, DM , ABU NAHLA, H , AL-QUTAYRI, M , CHRISTOFOROU, N , (2016) STATE OF THE ART OF METAL OXIDE MEMRISTOR DEVICES.NANOTECHNOLOGY REVIEWS. VOL. 5. ISSUE 3. P. 311 -329 | 119 | 95% | 0 |
Classes with closest relation at Level 3 |